Hi Mike,
I discussed this drawing with it's creator (Bob Ross) on the phone yesterday. It
appears that it was the nomenclature in the drawing that I was misunderstanding.
Here is another suggested improvement that I provided:
| +----------------------------------------+
| | |
| | Ids = Table Current |
| | ---> |
| +---<---| |--->----------+ |
| d |_____| - s | + |
| --+-- Vgs +---+---+ +----+----+
| | g + | Sweep | | Sweep |
| | Vs | | Vs+Vds |
| +---+---+ +----+----+
| | - |
| GND GND
|
| Example of Series MOSFET Table Extraction
The way that the power-supply on the drain was originally labeled, I had
misunderstood it to be a FIXED supply (like a Vdd). With the labeling I propose
above, I think it is more clear that this is a SWEPT supply that is always Vds
above Vs.
I agree with you that the gate supply should be illustrated also.
There is an example model (Created by Mentor Graphics) of a TI CBT3383 part
available at: http://www.eda.org/pub/ibis/samples/ver3.1/cbt.ibs
Now another question:
What table voltage do I use for Vgs, when the series switch is a parallel NMOS
and PMOS?
| gateP=GND
| |
| o
| ======= Vgs-p
| | |
| ----<---+ +--->----
| d |_____| s
| --+-- Vgs-n
| |
| gateN=Vcc
-- Regards, Stephen M. Nolan Mike LaBonte wrote: > > Stephen, > > The figure in the IBIS specification is electrically equivalent to yours, > although your version is easier to understand, in my opinion. The spec > shows two swept sources with a DC offset between them. I prefer your notion > of one fixed source and one swept source, closer to the hardware that would > actually be used. > > I would like to see the diagrams also showing the attachment of the gate to Vcc, > since it currently appears that the entire circuit just floats up and down with the > sweep voltage. Then again, maybe the swept source should be attached between > the source and gate, since we are attempting to sweep Vgs. > > By the way, has anyone found one of these series switch models available for > public use? > > Mike > > Stephen Nolan wrote: > > > > Question 1, > > > > In IBIS Version 3.2, Section 6, "Keyword: [Series MOSFET]" it states that > > "C_comp values are ignored for [Series MOSFET] models." How do you account for > > the Cio(off) and Cio(on) characteristics of the FET in the IBIS model? > > > > Question 2, > > In IBIS Version 3.2, Section 6, "Keyword: [Series MOSFET]", and Section 9.5, > > "Series MOSFET Table Extractions", it says that the voltage applied to the drain > > of the MOSFET is Vds, a fixed voltage difference between the drain and the > > source. Quoting from section 9.5: > > > > Vds is held constant by having a fixed voltage Vds > > between the drain and source nodes. > > > > However, the drawing shows a fixed voltage source between the drain and GROUND! > > > > | +----------------------------------------+ > > | | | > > | | Ids = Table Current | > > | | ---> | > > | +---<---| |--->----------+ | > > | d |_____| - s | + | > > | --+-- Vgs +---+---+ +----+----+ > > | | g + | Sweep | | Vs + | > > | | Vs | |Fixed Vds| > > | +---+---+ +----+----+ > > | | - | > > | GND GND > > | > > | Example of Series MOSFET Table Extraction > > > > I could see how this would result in a Vds voltage if Vs + was swept, so that it > > was always equal to the swept Vs+Vds, but it says "Fixed", not "Sweep". > > > > Shouldn't this drawing be as follows for a true Vds supply? > > | +---------+ > > | + | Vs + | - > > | +-----------+Fixed Vds|------+ > > | | +---------+ | > > | | | > > | | Ids = Table Current | > > | | ---> | > > | +---<---| |--->----------+ > > | d |_____| - s | + > > | --+-- Vgs +---+---+ > > | | g + | Sweep | > > | | Vs | > > | +---+---+ > > | | - > > | GND > > > > -- > > Regards, > > Stephen M. NolanReceived on Fri May 19 07:23:15 2000
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