Subject: RE: [IBIS-Users] C-Comp
From: Muranyi, Arpad (arpad.muranyi@intel.com)
Date: Fri Jul 18 2003 - 08:06:12 PDT
That is because the IV curves do not exhibit any capacitive
behavior, they are only DC. In order to put the capacitive
effects into the IBIS model we need to add a capacitance to
the IV curves.
Arpad Muranyi
Intel Corporation
===========================================================
-----Original Message-----
From: Anshuli Goel [mailto:anshuli@ti.com]
Sent: Friday, July 18, 2003 6:16 AM
To: 'ibis-users@eda.org'
Subject: [IBIS-Users] C-Comp
Hello Experts
I have one naive question.
While defining the C_Comp we say "C_comp defines the silicon die
capacitance. This value should not include capacitance of
the package.The C_comp capacitance must represent what you see when you
look into the die at the die pad. This includes the die pad, metal
connections on the die, the driver transistor's capacitance, the receiver
(input)capacitance, everything that is on the die."
But my understanding is that anyway the netlist is going to have driver
transistors in it in case of buffers, why do we need to account for the
capacitance for driver transistors ?? I can understand about the metal
connection and bond pad capacitance ,but I am not able to understand the
Transistors Capacitance part of it . Please clarify.
Regards
Anshuli
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