IBIS SUMMIT next year, From: Kellee Crisafulli

Bob I saw your Email, and I am also very interested in your items 1 and 4.

(1) More details on the diode stored charge effects in clamping circuits and
    how to model.

(4) More details on possible simplified package models with coupling and
    delay.

I feel that the diodes are a very badly needed improvement to the specification.
Many of the devices out there don't exhibit the instant turn-on times implied
by the present IBIS specification. This has little effect on CMOS output buffers
but has dramatic effect on all types of input buffers. Termination effects may be
much more pronounced in a real circuit than simulators are showing.

I would like to see something very simple to start with. Perhaps a turn on curve
of percent ON versus time, where the percent on is relative to the diode current
in the table. This could be a simple "turn-on-time". Another approach might be to
use more of a real charge storage model. The trick is to make it measurable with
device testers, and keep the amount of information that needs to be collected and
simulated as small as possible. As IBIS models get larger the simulation speed goes
down.

Kellee Crisafulli,
HyperLynx Inc.
Received on Tue Dec 6 06:54:19 1994