Re: V/I transition curves

Peivand,

 This is actually a dead zone for IBIS modeling.
IBIS modeling assumes fast input transtion.
You can scale the I/V curve with respect to the input
rise/fall time only if you have short-channel MOSFET
devices for your output drivers. Slow input transition
alters the knee voltage at the driver output. Also it affects
rising/falling characteristics at the driver. These changes
are not significant unless you have an extraordinary long
input transition time.
There certainly are trade-offs between accuracy and speed
in simulation models, which limit IBIS modeling capability
in some applications.

Regrads,

Sung Oh
VLSI Technology, Inc.

>>From bd25531@bingsuns.cc.binghamton.edu Wed Sep 13 11:15 MST 1995
>>From: bd25531@bingsuns.cc.binghamton.edu
>>Subject: V/I transition curves
>>To: ibis@vhdl.org
>>Date: Wed, 13 Sep 1995 13:43:54 -0400 (EDT)
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>>Hi IBISians!
>>According to the information in IBIS documents only one curve for
>>Low and High states are given. Assuming that the device Low-High or
>>High-Low transtion takes some time, the transition data would be
>>neccessary, one way that I can think of is scaling the V/I curves
>>for this purpose. I am looking for other ways to do this thing,so
>>can any of you IBISians help me in this matter?
>>
>>Viva IBIS!!
>>
>>peivand
>>
>>
>>
Received on Wed Sep 13 11:51:27 1995