Subject: RE: [IBIS-Users] Ground Bounce/SSO analysis
From: Peters, Stephen (stephen.peters@intel.com)
Date: Thu Oct 17 2002 - 13:01:38 PDT
Hello Rob:
We don't discuss specific simulator capabilities on the mail list, but in
general there are two ways of dealing with simulating ground bounce. If you
have access to a 2D/3D field solver and the low level package/chip design,
you can approximate the on-die power distribution then use the [Pin Mapping]
keyword to describe the on-die power distribution. I personally haven't seen
a model that uses [Pin Mapping], and not many simulators support it (or
ground bounce simulations in general).
The other method is to take your V-T and I-V data under SSO conditions --
i.e. create a model with the effects of SSO imbedded in the data. Of
course, the model is fixed for a specific number of outputs switching, but
the model can then be used in any simulator that supports IBIS.
Hope this helps.
Regards,
Stephen Peters
Intel Corp.
-----Original Message-----
From: rob.mataheroe@philips.com [mailto:rob.mataheroe@philips.com]
Sent: Thursday, October 17, 2002 2:40 AM
To: ibis-users@eda.org
Subject: [IBIS-Users] Ground Bounce/SSO analysis
Signal Integrity Engineers,
Can somebody inform me how Ground Bounce and SSO effects can be simulated
with an IBIS simulator? Which IBIS simulator?
Looking forward to receiving your reactions.
Kind regards,
Rob
__________________________________________________________________________
Rob Mataheroe
Philips Semiconductors bv
P.G. Logic Product Group PD&S
Building AM1.108
Senior Design Modeling Engineer
Gerstweg 2
Tel. ++31 (0)24 353 2370
6534 AE Nijmegen
Fax. ++31 (0)24 353 2820
The Netherlands
Email: Rob.Mataheroe@philips.com
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