Subject: Re: [IBIS-Users] C-Comp
From: Anshuli Goel (anshuli@ti.com)
Date: Mon Jul 21 2003 - 02:19:29 PDT
Arpad
As far as I understand the C_comp value is not taken into account for IV curve
calculation , it is only added in the calculation in VT curve , so while
calculating VT curve we already have capacitance , why do we need to put
C_Comp ??
Anshuli
"Muranyi, Arpad" wrote:
> That is because the IV curves do not exhibit any capacitive
> behavior, they are only DC. In order to put the capacitive
> effects into the IBIS model we need to add a capacitance to
> the IV curves.
>
> Arpad Muranyi
> Intel Corporation
> ===========================================================
>
> -----Original Message-----
> From: Anshuli Goel [mailto:anshuli@ti.com]
> Sent: Friday, July 18, 2003 6:16 AM
> To: 'ibis-users@eda.org'
> Subject: [IBIS-Users] C-Comp
>
> Hello Experts
>
> I have one naive question.
> While defining the C_Comp we say "C_comp defines the silicon die
> capacitance. This value should not include capacitance of
> the package.The C_comp capacitance must represent what you see when you
> look into the die at the die pad. This includes the die pad, metal
> connections on the die, the driver transistor's capacitance, the receiver
> (input)capacitance, everything that is on the die."
>
> But my understanding is that anyway the netlist is going to have driver
> transistors in it in case of buffers, why do we need to account for the
> capacitance for driver transistors ?? I can understand about the metal
> connection and bond pad capacitance ,but I am not able to understand the
> Transistors Capacitance part of it . Please clarify.
>
> Regards
> Anshuli
>
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