Hello,
I created an IBIS model of a GPIO cell and correlated the simulation results between using the IBIS model (HSPICE simulation) with the transistor level (spectre simulation).
I used two methods in obtaining the IV and VT curves.
However, the correlation results are 50% off for the risetimes & falltimes for both cases.
Can anyone please advise on what to do in this case?
Thanks & best regards,
Estella
National Semiconductor
(408) 721-7678
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