Subject: [IBIS-Users] EBD [Path Description] question
From: Kazu Tsukada (tsukada@melcoinc.co.jp)
Date: Thu May 16 2002 - 19:05:35 PDT
Hello
I have a question about EBD Path Description.
V3.2 spec says that :
| The Len, L, R, and C subparameters specify the length, the
| series inductance, resistance, and the capacitance to ground
| of each section in a path description.
|
| Len The physical length of a section. Lengths are given
| in terms of arbitrary 'units'. Any non-zero length
| requires that the parameters that follow must be
| interpreted as distributed elements by the simulator.
| L The series inductance of a section, in terms of
| 'inductance/unit length'. For example, if the total
| inductance of a section is 3.0 nH and the length of
| the section is 2 'units', the inductance would be
| listed as L = 1.5 nH (i.e. 3.0 / 2).
| C The capacitance to ground of a section, in terms of
| capacitance per unit length.
| R The series DC (ohmic) resistance of a section, in
| terms of ohms per unit length.
Does this R mean literally DC(at 0MHz) resistance ?
There are some EDA tools which can consider skin effect when computing
trace resistance. Some vender suggests to consider skin effect.
Thank you.
-Kazu Tsukada/Melco,Inc.
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