RE: [IBIS-Users] IBIS LVDS Receiver 100 ohm termination modeling

Bob,

Thank you for your interest in IBIS! What you propose certainly looks
feasible. In addition to the syntax you show, you might also consider
adding single-ended buffer models for each of the A and B pins, if these
demonstrate diode clamping behaviors, single-ended internal terminations
and/or other features not captured by just the series resistive element
between the pins. The IBIS specification permits single-ended buffers
to be used in conjunction with series elements.

Also note that, if the resistance of your receiver termination is
non-linear but is time-invariant, you might instead use [Series Current]
or [Series MOSFET] in place of [R Series].

- Michael Mirmak
  Intel Corp.
  Chair, EIA IBIS Open Forum

-----Original Message-----
From: owner-ibis-users@eda.org [mailto:owner-ibis-users@eda.org] On
Behalf Of Johnson Jr, Robert H. (FL51)
Sent: Thursday, January 27, 2005 2:21 PM
To: ibis-users@eda.org
Subject: [IBIS-Users] IBIS LVDS Receiver 100 ohm termination modeling

Is this the standard approach for modeling an LVDS receiver with a 100
ohm
termination?

[Series Pin Mapping] pin_2 model_name function_table_group
|
A B rterm_100

[Diff Pin] inv_pin vdiff tdelay_typ tdelay_min tdelay_max
|
A B 100mV 0 0 0

|
************************************************************************
| 100ohm differential resistor
|***********************************************************************
*
|
[Model] rterm_100
Model_type Series
|
| (typ) (min) (max)
|
C_comp 0.1000pF 0.1000pF
0.1000pF
[Temperature Range] 25.0000 100.0000 0.000
[Voltage Range] 2.5000V 2.3750V
2.6250V
[R Series] 105 125 80

thanks,
Bob

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Received on Thu Jan 27 14:42:43 2005