Yuanchen,
I would suggest that you measure your clamp I-V curves
with a sweep that starts from 0 V going in the negative
direction or from Vcc going in the positive direction.
This way you don't begin the sweep and blow the chip at
the beginning of the sweep.
I would also suggest that you use a curve tracer which
can get the measurement done in one sweep (as opposed to
repetitive sweep to get multiple points) because that
way the chip doesn't heat up so much, and you can sweep
out to any voltage (if you can allow yourself to blow
the chip while you do this), but you will still get good
data until the chip blew up.
The other thin g you have to keep in mind is that you
need a power supply that can sink and source the current.
Most supplies can only do one, which means that they
regulate against the load pulling the voltage between GND
and Vcc together, but they don't regulate against the
load pushing the voltage apart (in other words pushing
Vcc up from GND). When you measure the clamping diodes
on the Vcc side, you are actually pulling the Vcc voltage
up with the curve tracer, and if your supply can't hold
Vcc down, the Vcc voltage will "float" upward while you
do your sweep. This will come across as a much weaker
diode current reading in your measurement...
Arpad
===========================================================
From: owner-ibis-users@eda.org [mailto:owner-ibis-users@eda.org] On
Behalf Of Tom Dagostino
Sent: Tuesday, November 23, 2010 3:41 AM
To: 'ji xiao'; 'ibis-users'
Subject: RE: [IBIS-Users] Extract IBIS data from lab measurement
Yuancheng
It is easy to extract good VT data from a measurement if you have the
proper equipment. We've done this for 1000s of models.
Hopefully you are not trying to measure at -3.3V. If you are I can
understand that there would be a large difference between what is
measured and what the manufacture's model shows. I've not seen an IC's
ground clamp that could handle that much forward bias. You need to keep
the forward bias to a volt or less in most cases and extrapolate to
-Vdd. But without knowing what difference you are seeing it is hard to
tell why you are seeing it.
Regards,
Tom Dagostino
Teraspeed Labs
13610 SW Harness Lane
Beaverton, OR 97008
503-430-1065
tom@teraspeed.com
www.teraspeed.com
Teraspeed Consulting Group LLC
121 North River Drive
Narragansett, RI 02882
401-284-1827
www.teraspeed.com
From: owner-ibis-users@eda.org [mailto:owner-ibis-users@eda.org] On
Behalf Of ji xiao
Sent: Tuesday, November 23, 2010 1:15 AM
To: ibis-users
Subject: [IBIS-Users] Extract IBIS data from lab measurement
Dear all,
I want to extract the IV and Vt data from the chip measurement results,
but there are two problems.
1. For the Vt data, IBIS cookbook Version 4.0 and 5.0 only mention the
procedure of extract ramp rate. If I want to extract the detail Vt curve
table from the measurement results of a packaged chip, is it possible?
2. For the IV data, I successfully extract it from the measurement but
the extracted result only show agreement with original IBIS model
(provided by manufacturer) for operation region. When out of the
operation region, i.e., in diode model, the IV characteristics I got is
quite different from the original one.
For example, the voltage operation region of my chip is [-0.5, 3.8], in
this range, the measurement value of current is reasonable. However, for
the current measured beyond this voltage range, such as [-3.3, -0.5],
the measurement result will distort severely from the original IBIS
value. Could anyone help me analyze the possible reason for the
disagreement? Or is there something wrong I may make in measurement
setting? (I made the measurement setup according to cookbook version4.0)
Thanks and regards,
Yuancheng
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