From randyh  Tue Jan  4 13:40:34 1994
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From: randyh (Randy Harr)
Message-Id: <9401042140.AA21200@vhdl.vhdl.org>
To: ibis@vhdl.org
Subject: New files


Welcome back from the holidays!

Will Hobbs sent down the meeting minutes from the summit (see pub/ibis/summit93)
along with the overview document (see pub/ibis/overview.doc).  Some of the
latest meeting minutes (usually in the email archive file) were also sent
(see pub/ibis/minute93).  For the most part, only the original Microsoft
WORD document binaries are available.  When we get a chance (or if someone
would like to submit them) we will add the RTF and PostScript versions.

randy harr
randyh@lmc.com
From ccm!Will_Hobbs@intelhf.intel.com  Tue Jan  4 17:38:33 1994
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From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940104174011_78@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: New IBIS Bridge


Text item: Text_1

     IBISers and Fellow Electronic Ornithologists,
     
     The next meeting of the IBIS Open Forum will be from 9:00 - 11:00 
     Pacific time on Friday, January 7.  The bridge number is:
     
     (415) 904-8944, the reservation number is 627407.

     Please reference my name (Will Hobbs) as chairperson when you phone 
     in and tell the bridge operator the reservation number.

     Best Regards,
     
     Will
From Ravender_Goyal@pdxml1.mentorg.com  Thu Jan  6 09:39:35 1994
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Date: 6 Jan 1994 09:43:09 -0800
From: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
Subject: High freq effects in i/o mo
To: "chuck catto" <catto@wv.mentorg.com>, "ravender Goyal" <ibis@vhdl.org>

  High freq effects in i/o modeling           9:07 AM       1/6/94
Dear IBISers,

I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models. 
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:
                                       
                                       |   Vcc/ Vdd/ etc.
                            ____|____
                            |          B             |
                            |           L             |
                            |           A             |
input o--------|            C             |---------o output
                            |            K             |       |
                            |                            |        |
                            |      BOX            |     === pin
capacitance
                            --------------------         |
                                       |                           |
                               Ground
The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:

                ---------------  |   Vcc/ Vdd/ etc.
               |            ____|____
               |            |          B             |
             ==         |           L             |
               |            |           A             |
input o--------|            C             |---------o output
                 |          |            K             |       |
                 |          |                            |        |
                 |          |      BOX            |     === pin
capacitance
               ==       --------------------         |
                 |                      |                          |
                  ------------   Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender


From rgoyal@wv.MENTORG.COM  Thu Jan  6 10:31:02 1994
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From: rgoyal@wv.MENTORG.COM (Ravender Goyal)
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X-Mailer: Z-Mail (2.1.4 02apr93)
To: ibis@vhdl.org, chuck_catto@wv.MENTORG.COM
Subject: high freq effects in i/o models

Sorry, in my last message, it seems that the figures did not come through good. 
Let me make another attempt here.

Ravender
-------------------------------------------------------------------------------
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models. 
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |   
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |   
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From catto@wv.MENTORG.COM  Thu Jan  6 10:44:06 1994
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From: catto@wv.MENTORG.COM (Chuck Catto @ PCB x5506)
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Date: Thu, 6 Jan 94 10:47:17 -0800
Message-Id: <9401061047.ZM11478@hpcatto>
In-Reply-To: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
        "High freq effects in i/o mo" (Jan  6,  9:43am)
References: <9401061738.AA05347@rainbow.mentorg.com>
X-Mailer: Z-Mail (2.1.3 26jan93)
To: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>,
        "ravender Goyal" <ibis@vhdl.org>
Subject: Re: High freq effects in i/o mo
Cc: catto@wv.MENTORG.COM

Ravender,

Yes, whole heartedly!  Way back when, when I first started using
Quad, the one question I had in mind was freqency dependent char-
acteristics of the output drivers and input receivers.  All mea-
surements are done at DC, without any jw effects taken into ac-
count.  And in doing so, as you have stated below, this would 
lead to an understanding of the modelization or internal char-
acteristics of those devices looking into the output of a driver
or into the input of a receiver.

I feel it is necessary to take the imaginary component into effect,
and not rely simply on a lumped capacitance to a pin are some
"equivalent" series inductance of an io pin.  The modeling becomes
even more important at higher frequencies, as you mentioned.

I did not fully get your drawings, with the BLA K.  I was trying
to make sense, and thought perhaps the L meant inductance, etc.,
but lost it in the BA and K.  A FAX with a sketch would do me 
fine, and would be much appreciated.

I read with much interest your work on producing more accurate closed
form equations for characteristic impedance, etc. I think you are
doing an excellent job, and I am glad we have the right person at
the helm of this 'high-speed' ship.  I have a lot of respect for you.

Any and all inputs with respect to Quad, IBIS modeling, XFX3D and other
new developments, as well as research you are conducting, is much appreciated.

   Take care,
- Chuck Catto -

****************

On Jan 6,  9:43am, "Ravender Goyal" wrote:
> Subject: High freq effects in i/o mo
>   High freq effects in i/o modeling           9:07 AM       1/6/94
> Dear IBISers,
> 
> I am starting this discussion to get your inputs on including the high
> frequency effects  (4- 5 GHz) in IBIS models. 
> As we know the signal integrity analysis accuracy depends as much on
> accurately evaluating the electrical characterisitcs (characteristic
> impedance, trace velocity, dispersion, to name a few) of interconnects,
> as it depends on the accuracy of evaluating or specifying the
> terminating impedances- i.e. the i/o models.
> For EMI (Electromagnetic Interference) analysis, the frequency of
> analysis is upto several GHz, as required by the FCC, European FCC etc.
> guidelines. Hence, for EMI analysis upto what ever frequency of
> interest, it is critical to have  i/o model that is valid at that
> frequency, else results from EMI analysis could be grossly  inaccurate.
> In order to include the high frequency effects, it is general
> impression (as I have heard in the past) that one may have to give up
> the proprietary information about the process. However, just for
> accurate impedance presentation, that may not be necessary. To give an
> example:
> 1- Today the i/o model is represented as follows:
>                                        
>                                        |   Vcc/ Vdd/ etc.
>                             ____|____
>                             |          B             |
>                             |           L             |
>                             |           A             |
> input o--------|            C             |---------o output
>                             |            K             |       |
>                             |                            |        |
>                             |      BOX            |     === pin
> capacitance
>                             --------------------         |
>                                        |                           |
>                                Ground
> The black box today is an i/v curve which results in a real impedance
> only. The  imaginary part of the impedance is contributed by the pin
> parasitics only. We all know that the semiconductor devices have
> capcitance that will also contribute to the imaginary part of the
> impedance.
> 2- At higher frequencies (5- 6 GHz), the device capacitances can be
> accounted for, as a first order approximation, as follows:
> 
>                 ---------------  |   Vcc/ Vdd/ etc.
>                |            ____|____
>                |            |          B             |
>              ==         |           L             |
>                |            |           A             |
> input o--------|            C             |---------o output
>                  |          |            K             |       |
>                  |          |                            |        |
>                  |          |      BOX            |     === pin
> capacitance
>                ==       --------------------         |
>                  |                      |                          |
>                   ------------   Ground
> 
> There may be another feedback capacitance from supply to ground. How
> these capcitances can be estimated, or measured are to be addressed.
> Also, what will be the optimum model to include the device
> capacitances, needs to be discussed.
> However, the primary question to address is, are these effects
> important to take into account for signal integrity/ EMI analysis?
> Secondly, is it within IBIS's charter to address such effects in the
> models?
> Thanks & look forward to hear from fellow IBISians......
> 
> 
> Ravender
> 
> 
>-- End of excerpt from "Ravender Goyal"


From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan  7 09:36:05 1994
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Date: Fri, 7 Jan 94 09:38:06 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From Ravender_Goyal@pdxml1.mentorg.com  Fri Jan  7 09:57:19 1994
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Message-Id: <9401071755.AA13763@rainbow.mentorg.com>
Date: 7 Jan 1994 09:59:32 -0800
From: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
Subject: Re: Hi frequency stuff
To: "ravender goyal" <ibis@vhdl.org>

        Reply to:   RE>>Hi frequency stuff
I agree in the case of driver pin, the input- cap will be effective
only if the predriver is defined as non- ideal source. However, for the
driver pin the output capacitor (collector to emitter or drain to
source) with- in the black box may be important. Also, how about the
receiver pin, where the pin is driven by the interconnect impedance? In
this case (receiver pin) the impedance match or mismatch between the
interconnect and pin will be important and may not need to define
preamplifier.... Thanks......

Ravender
--------------------------------------
Date: 1/7/94 9:42 AM
To: Ravender Goyal
From: Arpad Muranyi
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From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come
through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender



From bracken@valhalla.performance.com  Fri Jan  7 10:17:05 1994
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To: ibis@vhdl.org
Subject: Reference to Canright paper
Date: Fri, 07 Jan 94 13:17:08 -0500
From: bracken@valhalla.performance.com


Y'all,

  This may be the paper Bob Ward describes.  Does anybody have this
conference proceedings?

--Eric

****************************************************************

Author       CANRIGHT, R.E., Jr.; 
             Martin Marietta Missile Syst., Orlando, FL, USA
Title        Capacitance: relationships and measurements (for multiple 
             conductors in VLSI packages and PWB)
Source       1990 Proceedings. 40th Electronic Components and Technology 
             Conference (Cat. No.90CH2893-6); Part:  Las Vegas, NV, USA; Part: 
              20-23 May 1990; 
             Sponsored by:  IEEE; Electron. Ind. Assoc; 
             New York, NY, USA; 
             IEEE; 
             2 vol. xvi+1125 pp.; 
             1990 pp.; pp. 163-8 vol.1 pp.
Abstract     Three descriptions of capacitances for multiple conductors over a 
             ground are discussed: the lumped-element capacitance, the two-
             terminal capacitance, and Maxwell's capacitance. Equations that 
             completely interrelate the different descriptions of capacitance 
             are presented. Experimental evidence supporting the two-terminal 
             measurement technique is presented. AN example how the 
             measurement can be applied to the VLSI package is given. It is 
             also shown how networks of cross-coupled resistors can be measured
Subject      capacitance;  capacitance measurement;  conductors (electric);  
             packaging;  printed circuits;  VLSI
Keyword      parasite capacitance;  multiple conductors;  lumped-element 
             capacitance;  two-terminal capacitance;  Maxwell's capacitance;  
             VLSI package;  networks of cross-coupled resistors
ClassCodes   B2110;  B0170J;  B2570;  B2210;  B7310J
Treatment    theoretical/mathematical;  experimental
Language     English
RecordType   Conference
ControlNo.   3897358
AbstractNos. B91037970
References   6
U.S. Copyright Clearance Center Code
             0569-5503/90/0000-0163$01.00
Country Pub. USA
date         1170

****************************************************************
From bracken@valhalla.performance.com  Fri Jan  7 10:50:44 1994
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To: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Cc: ibis@vhdl.org
Subject: Re: 3D, or I/V/T models 
Date: Fri, 07 Jan 94 13:49:18 -0500
From: bracken@valhalla.performance.com


Arpad,

  One thing about 3-D models that I still don't understand:

  When you run tests of the 3-D models in HSPICE, I presume that
you replace the actual gate (transistors, etc.) with something 
else.  What is that "something else"?

--Eric
From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan  7 11:26:09 1994
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Date: Fri, 7 Jan 94 11:28:08 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107112808_3@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re[2]: Hi frequency stuff

Dear Ravender (and all IBISers),

I am not sure if I don't understand what you are talking about or
whether you missed something in the IBIS spec.

Currently, we have C_comp and C_pkg defined in IBIS.  Schematically it
can be drawn like this:


  +------+
  |      |
  |Buffer|------+--L_pkg----R_pkg--+--o Output
  |      |      |                  |
  +------+     ===C_comp          ===C_pkg
                |                  |
               GND                GND


This picture can be mirrored for an input structure.  What you describe
below as Collector to Emitter (or Source to Drain) capacitance looks to
me as C_comp and C_pkg is there for the (lumped) packaging capacitance.
I think what you are asking for is already there.

Arpad Muranyi
Intel Corporation
Folsom, CA


        Reply to:   RE>>Hi frequency stuff
I agree in the case of driver pin, the input- cap will be effective
only if the predriver is defined as non- ideal source. However, for the
driver pin the output capacitor (collector to emitter or drain to
source) with- in the black box may be important. Also, how about the
receiver pin, where the pin is driven by the interconnect impedance? In
this case (receiver pin) the impedance match or mismatch between the
interconnect and pin will be important and may not need to define
preamplifier.... Thanks......

Ravender
--------------------------------------
Date: 1/7/94 9:42 AM
To: Ravender Goyal
From: Arpad Muranyi
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Date: Fri, 7 Jan 94 09:38:06 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come
through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From bracken@valhalla.performance.com  Fri Jan  7 14:38:00 1994
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To: ibis@vhdl.org
Subject: High frequency stuff
In-Reply-To: Your message of "Fri, 07 Jan 94 11:28:08 PST."
             <940107112808_3@ccm.hf.intel.com>
Date: Fri, 07 Jan 94 17:38:06 -0500
From: bracken@valhalla.performance.com



Here are a few thoughts.

Say we have:

                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |
           |     B     |
           |     O     |
           |_____X_____|
                 |
                 |
                 |
                 |
                 o
               Ground (Vss, Vee, etc.)


I think we could identify several potential issues for discussion here:


    1)	Assuming that the "insides" of this black box respond 
	INSTANTANEOUSLY to changes at the terminals, is the set 
	of caps currently in the IBIS model sufficient for modelling
	the AC behavior of the four-terminal device shown above?  
        (Answer: No.  To be *rigorous*, you need 4 self-capacitances 
	and 6 coupling capacitances connected between every pair of 
	terminals.) The question in my mind is whether we need this level 
	of detail for DIGITAL circuits... It could certainly be important 
	for ANALOG microwave circuits, but I don't think IBIS is quite 
	"ready for prime time" there.

	Naturally there could also be inductances in series with every
	lead, with mutual inductances coupling every pair.

    2)  Presumably the black box is really NONlinear--the capacitance
	values depend upon the operating point.  What can we do in this
	case?  Provide a table of C-V data points?  What do you do with
	these in a simulation?  And how are they measured?

    3)  If the "guts" of the black box have significant "memory" and
	DON'T respond instantaneously when we wiggle the terminal voltages,
	what can we do?  You can talk about "small-signal" impedances
	and admittances, but these are only valid about a quiescent
	DC operating point--not when the device is slewing rapidly
	through different regions of operation.  And it's even scarier 
	to think about how to use these in a nonlinear large-signal 
	simulation.  (Note that this case includes the "feedback" 
	situation that we've recently been discussing in the forum.)

   Much of this smells like university research to me...but perhaps
we can conquer it?

--Eric
From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan  7 14:52:10 1994
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Date: Fri, 7 Jan 94 14:54:10 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107145410_7@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Dear Ravender (and all IBISers),

I am not sure if I don't understand what you are talking about or
whether you missed something in the IBIS spec.

Currently, we have C_comp and C_pkg defined in IBIS.  Schematically it
can be drawn like this:


  +------+
  |      |
  |Buffer|------+--L_pkg----R_pkg--+--o Output
  |      |      |                  |
  +------+     ===C_comp          ===C_pkg
                |                  |
               GND                GND


This picture can be mirrored for an input structure.  What you describe
below as Collector to Emitter (or Source to Drain) capacitance looks to
me as C_comp and C_pkg is there for the (lumped) packaging capacitance.
I think what you are asking for is already there.

Arpad Muranyi
Intel Corporation
Folsom, CA


        Reply to:   RE>>Hi frequency stuff
I agree in the case of driver pin, the input- cap will be effective
only if the predriver is defined as non- ideal source. However, for the
driver pin the output capacitor (collector to emitter or drain to
source) with- in the black box may be important. Also, how about the
receiver pin, where the pin is driven by the interconnect impedance? In
this case (receiver pin) the impedance match or mismatch between the
interconnect and pin will be important and may not need to define
preamplifier.... Thanks......

Ravender
--------------------------------------
Date: 1/7/94 9:42 AM
To: Ravender Goyal
From: Arpad Muranyi
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Date: Fri, 7 Jan 94 09:38:06 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come
through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
-
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan  7 15:16:17 1994
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Date: Fri, 7 Jan 94 15:18:21 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107151821_10@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re[2]: 3D, or I/V/T models

Eric,

I could make a drawing, but it really is not much different from the present
IBIS model.  Here is what I did:

I modified the ramp generator so that it became a stopwatch.  (I mean, it gives
elapsed time from the "event" (= threshold crossing).  Then I added a multiplier
element which uses the current vs. time table to scale the output current
based on the time elapsed from the "event".  There you have a 3-D model.

If you need more info I would be glad to answer your questions.

Arpad



Arpad,

  It partially answers my question--I was wondering what the
"replacement" circuit looked like.  (How are the V,I,R,C elements
hooked up?)  Would there be diagrams for any of this in the materials
from the Summit Meeting?

 --Eric
From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan  7 15:19:14 1994
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Date: Fri, 7 Jan 94 15:21:18 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107152118_10@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Returned mail: unknown mailer error 1

(Sorry for the duplicate, if you already got this one, but
I am not sure if I sent it out correctly)...


Dear Ravender (and all IBISers),

I am not sure if I don't understand what you are talking about or
whether you missed something in the IBIS spec.

Currently, we have C_comp and C_pkg defined in IBIS.  Schematically it
can be drawn like this:


  +------+
  |      |
  |Buffer|------+--L_pkg----R_pkg--+--o Output
  |      |      |                  |
  +------+     ===C_comp          ===C_pkg
                |                  |
               GND                GND


This picture can be mirrored for an input structure.  What you describe
below as Collector to Emitter (or Source to Drain) capacitance looks to
me as C_comp and C_pkg is there for the (lumped) packaging capacitance.
I think what you are asking for is already there.

Arpad Muranyi
Intel Corporation
Folsom, CA


        Reply to:   RE>>Hi frequency stuff
I agree in the case of driver pin, the input- cap will be effective
only if the predriver is defined as non- ideal source. However, for the
driver pin the output capacitor (collector to emitter or drain to
source) with- in the black box may be important. Also, how about the
receiver pin, where the pin is driven by the interconnect impedance? In
this case (receiver pin) the impedance match or mismatch between the
interconnect and pin will be important and may not need to define
preamplifier.... Thanks......

Ravender
--------------------------------------
Date: 1/7/94 9:42 AM
To: Ravender Goyal
From: Arpad Muranyi
Received: by pdxml2.mentorg.com with SMTP;7 Jan 1994 09:41:48 U
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Date: Fri, 7 Jan 94 09:38:06 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come
through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
-
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From bob@icx.com  Sat Jan  8 18:48:51 1994
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Date: Sat, 8 Jan 94 18:25:04 PST
From: bob@icx.com ( Bob Ross)
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To: ibis@vhdl.org
Subject: IBIS Support

Greetings:
In response to Will Hobb's question about EDA Vendor support at the 1/7/94
Forum, the Interconnectix product will be able to read IBIS Version 1.1 models 
directly (NATIVE MODE).  The product will be able to read a text file composed
of a library of IBIS models.  I am very concerned about the completeness of 
Release 2.0 and therefore will be raising (or reminding us of) a number
of issues concerning clarifications and possible enhancements.
Bob Ross

From ravender_goyal@eurogw1.mentorg.com  Mon Jan 10 10:34:13 1994
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Date: 10 Jan 94 10:31:37 U
From: "Ravender Goyal" <ravender_goyal@eurogw1.mentorg.com>
Subject: Re: High frequency stuff
To: bracken@valhalla.performance.com, ibis@vhdl.org

        Reply to:   RE>High frequency stuff
Before we get into the technical details of it, I believe the bottom line
question to ask is- 
does IBIS model address the EMI simulation and analysis requirements. 
        If 
the answer is no, 
       then 
we are ok with the present model. 
        if 
the answer is yes 
        then
does anyone (who knows the FCC EMI guidelines in USA, Europe and Japan) believe
that we are ok with the present model? 
        if
the answer is that IBIS does not address EMI reqreuiments, but need to address
that, then we need to get into the technical discussion, as to what it takes to
make the model accurate to address EMI requirements. Whether it is 2 additional
elements (which I believe, from my RF design background, may be enough to take
the model to 2- 4 GHz), 6 elements or 20 elements. I am not sure if the
complexity of model should deter to handle the requirements.
So bottom line is does IBIS models address EMI requirements accurately?

Ravender

--------------------------------------
Date: 1/7/94 11:48 PM
To: Ravender Goyal
From: bracken@valhalla.performance.c
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To: ibis@vhdl.org
Subject: High frequency stuff
In-Reply-To: Your message of "Fri, 07 Jan 94 11:28:08 PST."
             <940107112808_3@ccm.hf.intel.com>
Date: Fri, 07 Jan 94 17:38:06 -0500
From: bracken@valhalla.performance.com



Here are a few thoughts.

Say we have:

                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |
           |     B     |
           |     O     |
           |_____X_____|
                 |
                 |
                 |
                 |
                 o
               Ground (Vss, Vee, etc.)


I think we could identify several potential issues for discussion here:


    1)	Assuming that the "insides" of this black box respond 
	INSTANTANEOUSLY to changes at the terminals, is the set 
	of caps currently in the IBIS model sufficient for modelling
	the AC behavior of the four-terminal device shown above?  
        (Answer: No.  To be *rigorous*, you need 4 self-capacitances 
	and 6 coupling capacitances connected between every pair of 
	terminals.) The question in my mind is whether we need this level 
	of detail for DIGITAL circuits... It could certainly be important 
	for ANALOG microwave circuits, but I don't think IBIS is quite 
	"ready for prime time" there.

	Naturally there could also be inductances in series with every
	lead, with mutual inductances coupling every pair.

    2)  Presumably the black box is really NONlinear--the capacitance
	values depend upon the operating point.  What can we do in this
	case?  Provide a table of C-V data points?  What do you do with
	these in a simulation?  And how are they measured?

    3)  If the "guts" of the black box have significant "memory" and
	DON'T respond instantaneously when we wiggle the terminal voltages,
	what can we do?  You can talk about "small-signal" impedances
	and admittances, but these are only valid about a quiescent
	DC operating point--not when the device is slewing rapidly
	through different regions of operation.  And it's even scarier 
	to think about how to use these in a nonlinear large-signal 
	simulation.  (Note that this case includes the "feedback" 
	situation that we've recently been discussing in the forum.)

   Much of this smells like university research to me...but perhaps
we can conquer it?

--Eric



From ccm!Arpad_Muranyi@intelhf.intel.com  Mon Jan 10 10:37:32 1994
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Date: Mon, 10 Jan 94 09:44:04 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940110094404_48@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Testing for returned mail problem

This is just a test message.  My mail kept coming back to me as returned mail.
I just want to see if this goes through.

Thanks for ignoring this...

Arpad
From ccm!Arpad_Muranyi@intelhf.intel.com  Mon Jan 10 10:37:15 1994
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Date: Mon, 10 Jan 94 09:43:51 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940110094351_43@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Hi frequency stuff (try again)

(Sorry for the duplicate if you already got this one, but
it keeps coming back to me as returned mail...)


Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come through
good.  Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From ccm!Arpad_Muranyi@intelhf.intel.com  Mon Jan 10 10:37:26 1994
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Date: Mon, 10 Jan 94 09:44:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940110094400_47@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Hi frequency stuff2  (try again)

(Sorry for the duplicate if you already got this one, but
it keeps coming back to me as returned mail...)


Dear Ravender (and all IBISers),

I am not sure if I don't understand what you are talking about or
whether you missed something in the IBIS spec.

Currently, we have C_comp and C_pkg defined in IBIS.  Schematically it
can be drawn like this:


  +------+
  |      |
  |Buffer|------+--L_pkg----R_pkg--+--o Output
  |      |      |                  |
  +------+     ===C_comp          ===C_pkg
                |                  |
               GND                GND


This picture can be mirrored for an input structure.  What you describe
below as Collector to Emitter (or Source to Drain) capacitance looks to
me as C_comp and C_pkg is there for the (lumped) packaging capacitance.
I think what you are asking for is already there.

Arpad Muranyi
Intel Corporation
Folsom, CA


        Reply to:   RE>>Hi frequency stuff
I agree in the case of driver pin, the input- cap will be effective
only if the predriver is defined as non- ideal source. However, for the
driver pin the output capacitor (collector to emitter or drain to
source) with- in the black box may be important. Also, how about the
receiver pin, where the pin is driven by the interconnect impedance? In
this case (receiver pin) the impedance match or mismatch between the
interconnect and pin will be important and may not need to define
preamplifier.... Thanks......

Ravender
--------------------------------------
Date: 1/7/94 9:42 AM
To: Ravender Goyal
From: Arpad Muranyi
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Date: Fri, 7 Jan 94 09:38:06 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940107093806_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: Hi frequency stuff

Hi IBIS folks,

To respond to this (Hi Frequency) issue, it seems to me that those
capacitors on the input side of the "Black BOX" do nothing if the
buffer is driven with an ideal source (zero impedance).  This might
be the case in some IBIS implementations.  Those capacitors will have
a correct effect only if the predriver is modeled correctly.

Are we ready to add more V/I curves to the IBIS standard to describe
the predriver?


Arpad Muranyi
Intel Corporation
Folsom, CA


Sorry, in my last message, it seems that the figures did not come
through
-good.
Let me make another attempt here.

Ravender
------------------------------------------------------------------------------
-
-
-
-
--
I am starting this discussion to get your inputs on including the high
frequency effects  (4- 5 GHz) in IBIS models.
As we know the signal integrity analysis accuracy depends as much on
accurately evaluating the electrical characterisitcs (characteristic
impedance, trace velocity, dispersion, to name a few) of interconnects,
as it depends on the accuracy of evaluating or specifying the
terminating impedances- i.e. the i/o models.
For EMI (Electromagnetic Interference) analysis, the frequency of
analysis is upto several GHz, as required by the FCC, European FCC etc.
guidelines. Hence, for EMI analysis upto what ever frequency of
interest, it is critical to have  i/o model that is valid at that
frequency, else results from EMI analysis could be grossly  inaccurate.
In order to include the high frequency effects, it is general
impression (as I have heard in the past) that one may have to give up
the proprietary information about the process. However, just for
accurate impedance presentation, that may not be necessary. To give an
example:
1- Today the i/o model is represented as follows:


                 o Vcc/ Vdd etc.
                 |
                 |
                 |
            _____|_____
           |     B     |
           |     L     |
           |     A     |
           |     C     |
   o-------|     K     |------o output
 input     |           |    |
           |     B     |    |
           |     O     |    |
           |_____X_____|   === pin capacitance
                 |          |
                 |          |
                 |-----------
                 |
                 o
               Ground


The black box today is an i/v curve which results in a real impedance
only. The  imaginary part of the impedance is contributed by the pin
parasitics only. We all know that the semiconductor devices have
capcitance that will also contribute to the imaginary part of the
impedance.
2- At higher frequencies (5- 6 GHz), the device capacitances can be
accounted for, as a first order approximation, as follows:


                 o Vcc/ Vdd etc.
                 |
       ----------|
       |         |
       |    _____|_____
       |   |     B     |
      ===  |     L     |
       |   |     A     |
       |   |     C     |
   o-------|     K     |------o output
 input |   |           |    |
       |   |     B     |    |
       |   |     O     |    |
       |   |_____X_____|   === pin capacitance
      ===        |          |
       |         |          |
       ----------|-----------
                 |
                 o
               Ground

There may be another feedback capacitance from supply to ground. How
these capcitances can be estimated, or measured are to be addressed.
Also, what will be the optimum model to include the device
capacitances, needs to be discussed.
However, the primary question to address is, are these effects
important to take into account for signal integrity/ EMI analysis?
Secondly, is it within IBIS's charter to address such effects in the
models?
Thanks & look forward to hear from fellow IBISians......


Ravender
From 71436.1314@CompuServe.COM  Tue Jan 11 20:16:09 1994
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Date: 11 Jan 94 23:10:33 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: Do IBIS models support EMI simulations?
Message-Id: <940112041032_71436.1314_BHU37-1@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx

I believe that IBIS models will work for first order EMI simulations.  The 
best indications that I have seen are when comparing the EMI profiles from 
a real system that has had the transmission lines terminated and the same 
system without termination, there can easily be more than 10 db of 
difference. 
From Ravender_Goyal@pdxml1.mentorg.com  Wed Jan 12 09:02:05 1994
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Date: 12 Jan 1994 09:02:58 -0800
From: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
Subject: Re: Do IBIS models support E
To: "ravender goyal" <ibis@vhdl.org>,
        "Kellee Crisafulli" <71436.1314@CompuServe.COM>

        Reply to:   RE>Do IBIS models support EMI 
10 db of difference at what frequency? One has to specify the freq when
you talk about the radiated power. I will have hard time to believe
that it was 10 db of difference from dc to optical freq. 

Yes, the dc model will work as a first order approximation, (ofcourse,
dc model is the primary requirement to represent a device), but will
not have anywhere close to accurate radiation power AS A FUNCTION OF
FREQ. 

Kelle has brought a very good point, as one uses the appropriate
terminations and accounts for signal integrity issues, EMI will be less
compared to when signal integrity issues are not accounted for.
Unterminated Xlines, open eneded Xlines- long stubs etc.,
discontinuties- all act as antenna at one freq. or the other. However,
that gives a feel of comfort, not the quantitative measure of how much
less radiations.

In the present model we are considering for IBIS with dc IV
characterisitcs, intrinsic device (without package) will have the gain
with respect to frequency from dc to optical freq.- if that is true, it
means that when one calculates the ac currents through the
interconnects, the only reason those ac currents will be different is
due to the freq response of interconnects. As far active devices- i/o,
they will have the same freq response at all the freqs. Well, an
analogous situation is, if the i/o models do not change with voltage
i.e. we use only linear model- will that be acceptable? Practical
devices tend to have 3db gain bandwidth, which define their usefulness
for a particular high speed or high frequency application. ECL bipolar
devices may have 3db gain bandwidth in x00 MHz- x GHz range, state of
the art bipolar devices have 3 db gain bandwidth in low 1x GHz range,
MESFET devices have typical useful freq response to high 1x GHz, and
HEMTs go upto xx GHz. If we model all devices with their IV models only
and not worry about their freq response, we are assuming that intrinsic
devices have same freq response (dc to infinity). In essence, given the
same IV dc model for all devices (CMOS, ECL, BiCMOS, MESFET, HEMT)- for
the sake of discussion), CMOS devices typically have lowest freq
response, will not be able to sustain any signal above x00 MHz, so
there will be minimal signal strength supported by the device at higher
freqs, whereas if one is using MESFETs, the system may be able to
support signals at much higher freqs and hence may have significant
radiated power at higher freqs.

Yes, the package parasitics will limit the freq response of the device,
but in case one uses unpackaged device, devices will have freq response
to infinite. Also, whether one puts an ECL- bipolar device or a MESFET
device or for the sake of argument a HEMT device, all will have the
same freq reponse (may have differences due to dc IV models, but freq
response will be the same)- no effect on radiated power pattern as a
function of freq as calculated by the EMI tool.

Ravender
--------------------------------------
Date: 1/11/94 8:20 PM
To: Ravender Goyal
From: Kellee Crisafulli
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Date: 11 Jan 94 23:10:33 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: Do IBIS models support EMI simulations?
Message-Id: <940112041032_71436.1314_BHU37-1@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx

I believe that IBIS models will work for first order EMI simulations. 
The 
best indications that I have seen are when comparing the EMI profiles
from 
a real system that has had the transmission lines terminated and the
same 
system without termination, there can easily be more than 10 db of 
difference. 



From ccm!Will_Hobbs@intelhf.intel.com  Wed Jan 12 13:34:38 1994
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Date: Wed, 12 Jan 94 13:37:17 PST
From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940112133717_5@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: NEW BIRD, #6


Hello IBIS members:

How can we specify components with differential pins?
Some devices in the ECLinPS families such as the MC10E111, MC10E112, and 
MC10E116 have differential driver and receiver functionality.  Examples 
for differential bidirectional operation include components such as the
SN75117, SN75176A, and SN75LBC976 contained in the Data Transmission Circuits 
book from TI.

A proposal in BIRD format is put on the table for discussion and refinement.

Bob Ross, Interconnectix, Inc.

***************************************************************************** 
*****************************************************************************
                 Buffer Issue Resolution Document  (BIRD)

BIRD ID#:                6
ISSUE TITLE:             Differential Pin Specification 
REQUESTOR:               Bob Ross, Interconnectix, Inc. 
DATE SUBMITTED:          12 January 1994
DATE REVISED:
DATE ACCEPTED BY IBIS OPEN FORUM:     {will be filled in when accepted}

******************************************************************************
******************************************************************************
STATEMENT OF THE ISSUE:

  Several components contain pins which operate in a differential mode with
respect to other pins.  Since this operation in inherent to a component, 
the IBIS document should be extended to specify this functionality.

******************************************************************************
STATEMENT OF THE RESOLVED SPECIFICATIONS:

  An additional optional keyword, [Diff_Pin], is added to the specification.

|========================================================================== 
|    Keyword:  [Diff_Pin]
|   Required:  Optional
|Description:  Used to associate differential pins and their peak-to-peak 
|              differential voltages.
| Sub-Params:  inv_pin, vpp
|Usage Rules:  Entries follow these rules: Only differential pin pairs
|              are entered.  The [Diff_pin] column contains a non-inverting 
|              pin number and the inv_pin column always contains the
|              corresponding inverting pin number for output and I/O output. 
|              The vpp column contains the specified peak-to-peak voltage
|              between pins if the pins are an Input or I/O Model_type.
|              When the input pins follow the polarity convention according 
|              to the columns they are entered, the vpp value is positive. 
|              However, a negative vpp value means that the input pins do
|              not follow the polarity convention, such as when the I/O
|              input polarity is opposite that for output operation.  For 
|              output only differential pins, the vpp entry is 0V.
|Other Notes:  The output pin polarity specification in the table takes 
|              precedence over the [Model] Polarity specification such
|              that the pin in the [Diff_pin] column will be Non-Inverting 
|              and the pin in the inv_pin column will be Inverting.  One
|              [Model] is permitted for both pins. 
|
|              Column length limits are:
|                      [Diff_Pin]        5 characters max 
|                      inv_pin           5 characters max 
|                      vpp               9 characters max 
|
|              [Model] Vinl and Vinh specifications are permitted since
|              some components contain this information even for differential 
|              input pins.
|--------------------------------------------------------------------------- 
[Diff_Pin]     inv_pin     vpp
|
3              4           150mV     | Input or I/O pin pair 
8              9           0V        | Output pin pair
14             15          -500mV    | Input or I/O pin pair with input
                                     | polarity opposite of that shown

******************************************************************************
ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

  Since only a small percentage of components contain differential pins,
[Diff_Pin] is optional.  It is required only if the model itself must convey 
associations between pins for differential inputs and/or outputs.

It is possible to provide methods external to a model to associate component
pins by relating the attached networks.  This may be the best method when some 
output pins are complementary.

  However, IBIS should handle pins designed for differential operation which
contain specifications based on the associations between pins.  Such components
may contain a differential input sensitivity specification such as "Vpp" or 
"VT+" and "VT-" which define a peak to peak voltage between two input pins. 
Thus the vpp column is introduced.  Furthermore a few components contain I/O 
pins where the output differential polarity is opposite that of the input 
(e.g., SN75117). The vpp polarity is used for such a case, but extended for 
consistency to cover any input pin pair.

For timing purposes, an output is referenced to a zero volt cross-over value
between two output pins.  Setting the vpp entry to 0V is chosen to correspond 
to output differential voltage selections.

  The column lengths are consistent with the [Pin] keyword column lengths.

******************************************************************************
ANY OTHER BACKGROUND INFORMATION:

******************************************************************************
From huq@rockie.nsc.com  Thu Jan 13 16:53:29 1994
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Date: Thu, 13 Jan 94 15:49:19 PST
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9401132349.AA07733@rockie.nsc.com>
To: ibis@vhdl.org
Subject: Differential Line testing
Cc: huq@rockie.nsc.com

Hi IBIS members:
	As a semiconductor product vendor, 90% of my devices are differential
	line drivers and differential line receivers. These fall under RS-422,
	RS-485, SCSI and LVDS standards. These products from National Semiconductor falls
	under the 'Data Transmission Products'. 

	I am glad BIRD ID#6 has started to address Differential Lines.

Regards,
Syed
Data Transmission Application
National Semiconductor Corp.
From Ravender_Goyal@pdxml1.mentorg.com  Thu Jan 13 17:00:33 1994
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Date: 13 Jan 1994 17:02:57 -0800
From: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
Subject: Re: Do IBIS models support E
To: "ravender goyal" <ibis@vhdl.org>

        Reply to:   RE>Do IBIS models support EMI 
This mail came back to me, so I am resending it. Sorry if you are
receiving it again....

Ravender
------------------------------------------------------------------
10 db of difference at what frequency? One has to specify the freq when
you talk about the radiated power. I will have hard time to believe
that it was 10 db of difference from dc to optical freq. 

Yes, the dc model will work as a first order approximation, (ofcourse,
dc model is the primary requirement to represent a device), but will
not have anywhere close to accurate radiation power AS A FUNCTION OF
FREQ. 

Kelle has brought a very good point, as one uses the appropriate
terminations and accounts for signal integrity issues, EMI will be less
compared to when signal integrity issues are not accounted for.
Unterminated Xlines, open eneded Xlines- long stubs etc.,
discontinuties- all act as antenna at one freq. or the other. However,
that gives a feel of comfort, not the quantitative measure of how much
less radiations.

In the present model we are considering for IBIS with dc IV
characterisitcs, intrinsic device (without package) will have the gain
with respect to frequency from dc to optical freq.- if that is true, it
means that when one calculates the ac currents through the
interconnects, the only reason those ac currents will be different is
due to the freq response of interconnects. As far active devices- i/o,
they will have the same freq response at all the freqs. Well, an
analogous situation is, if the i/o models do not change with voltage
i.e. we use only linear model- will that be acceptable? Practical
devices tend to have 3db gain bandwidth, which define their usefulness
for a particular high speed or high frequency application. ECL bipolar
devices may have 3db gain bandwidth in x00 MHz- x GHz range, state of
the art bipolar devices have 3 db gain bandwidth in low 1x GHz range,
MESFET devices have typical useful freq response to high 1x GHz, and
HEMTs go upto xx GHz. If we model all devices with their IV models only
and not worry about their freq response, we are assuming that intrinsic
devices have same freq response (dc to infinity). In essence, given the
same IV dc model for all devices (CMOS, ECL, BiCMOS, MESFET, HEMT)- for
the sake of discussion), CMOS devices typically have lowest freq
response, will not be able to sustain any signal above x00 MHz, so
there will be minimal signal strength supported by the device at higher
freqs, whereas if one is using MESFETs, the system may be able to
support signals at much higher freqs and hence may have significant
radiated power at higher freqs.

Yes, the package parasitics will limit the freq response of the device,
but in case one uses unpackaged device, devices will have freq response
to infinite. Also, whether one puts an ECL- bipolar device or a MESFET
device or for the sake of argument a HEMT device, all will have the
same freq reponse (may have differences due to dc IV models, but freq
response will be the same)- no effect on radiated power pattern as a
function of freq as calculated by the EMI tool.

Ravender
--------------------------------------
Date: 1/11/94 8:20 PM
To: Ravender Goyal
From: Kellee Crisafulli
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Date: 11 Jan 94 23:10:33 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: Do IBIS models support EMI simulations?
Message-Id: <940112041032_71436.1314_BHU37-1@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx

I believe that IBIS models will work for first order EMI simulations. 
The 
best indications that I have seen are when comparing the EMI profiles
from 
a real system that has had the transmission lines terminated and the
same 
system without termination, there can easily be more than 10 db of 
difference. 



From ccm!Derrick_Duehren@intelhf.intel.com  Fri Jan 14 15:20:39 1994
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From: Derrick Duehren <Derrick_Duehren@ccm.hf.intel.com>
Message-Id: <940114152324_8@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: IBIS 1/7/94 Meeting Minutes


Text item: Text_1


 Date:     January 14, 1994
     
 From:     Derrick Duehren  (503) 696-4299, fax (503) 696-4904
           Third Party Vendor Program Manager
           Xceleration Tools Group
           (Will Hobb's IBIS Assistant)
           Intel Corporation
           Hillsboro, Oregon
     
           and
           Will Hobbs (503) 696-4369,  fax (503) 696-4210 
           Intel Modeling Manager
     
 Subject:  Minutes from IBIS Open Forum 1/7/94
     
 To:
 Anacad                        Petra Osterman 
 AnSoft                        Henri Maramis* 
 Atmel Corporation             Dan Terry
 Cadence Design                Sandeep Khanna, Chris Reed,
                               Pawel Chadzynski*, Kumar*
 Contec                        Maah Sango*, Dermott Lynch, 
                               Clark Cochran
 High Design Technology        Michael Smith
 HyperLynx                     Steve Kaufer, Kellee Crisafulli* 
 Integrity Engineering         Greg Doyle, Wayne Olhoft
 Intel Corporation             Stephen Peters*, Don Telian, Will Hobbs*
                               Arpad Muranyi, Derrick Duehren*
 Interconnectix, Inc.          Bob Ross*
 Intergraph                    Ian Dodd*, David Wiens* 
 IntuSoft                      Charles Hymowitz
 Logic Modeling Corp.          Randy Harr
 Mentor Graphics               Greg Seltzer, Ravender Goyal* 
 Meta-Software                 Stephen Fenstermaker, Mei Wong* MicroSim
                               Arthur Wong, Jerry Brown, Graham Bell
 North Carolina State U.       Paul Franzon, Michael Steer 
 Performance Signal Integrity  Vivek Raghawan, Eric Bracken* 
 Quad Design                   Jon Powell*
 Quantic Labs                  Mike Ventham, Zhen Mu
 Siemens Nixdorf               Werner Rissiek, Ulas Rethneier* 
 Texas Instruments             Bob Ward*
 Thomson-CSF/SCTF              Jean Lebrun
 Zeelan Technology             Hiro Moriyasu, George Opsahl, 
                               Samie Samaan,Tay Wu
     
 CC:
 Intel Corporation             Randy Wilhelm, Jerry Budelman,
                               Intel IBIS team
     
 In the list above, attendees at the 1/7/94 meeting are indicated by *
     
 Next Meeting:       January 28, 1994, 8:15 AM to 10:00 PST. 
 *PLEASE NOTE THE    The Phone number, reservation number, and
 NEW TIME*           agenda will be sent out in the week of Jan. 17.
     
 Please note:  If you know of someone new who wants to join the e-mail 
 reflector (ibis@vhdl.org), or have updates to your e-mail address, e-mail 
 to ibis-request@vhdl.org.
     
 --------------------------------------------------------------------------
     
 Meeting Agenda
 --------------
     
 In keeping with the wishes of various participants, Will has arranged the 
 order to keep technical discussions later so that those who wish to leave 
 early may do so.
     
 9:00     Check-in
 9:05     Introductions of new IBIS members 
 9:10     12/3 Summit Minutes Review
          Opens for New Issues
 9:15     Another IBIS Press Release                Hobbs
          Enlisting new IC Vendors
          Forms of EDA support of IBIS              Hobbs
 9:30     BIRD 5.2, Pin Mapping                     Bracken
          EGG 1, mutual pin coupling                Bracken
 10:00    80 Column restriction?
          Non-intrusive pkg param extraction        Ward 
          Formal BNF notation                       Reed, Harr 
          VIH, VIL Thresholds for Inputs, BIRD 2    Powell 
          Spice to IBIS Converter
 10:30    IBIS 2.0 Goals                            Hobbs
          3D Modeling                               Muranyi 
          New model_types (r-packs, etc.)
          Modeling Feedback                         Hobbs, Peters
 10:45    Phased turn-on/off of multiple devices    Powell
          Open Side Devices                         Crisafulli 
          Other Updates (U of NC, DIE, etc.)        All
 10:55    Wrap-up, Next Meeting Plans
     
     
 Minutes
 -------
     
 1.  New members, 11/12 Minutes review, Open time for new issues:
     There were no new members to announce and no corrections were made to 
     last month's minutes.
     
     FYI, Paul Munsey was finally been paid by all the vendors who 
     contracted him to do the IBIS parser.
     
     A/R: Everyone.  Please use spaces instead of tabs in email.  Tabs do 
     not display well for some recipients.
     
 2.  Another IBIS Press Release
     Will Hobbs and Derrick Duehren are working on Intel-driven press 
     release.  No results yet.  
     
     There have been several articles featuring IBIS.  The most significant 
     was 12/8/93 EDN article which named IBIS as one of the hot 100 products 
     of 1993.  A half-page feature article on IBIS appeared in the 12/16/93 
     Electronic Design magazine(Pg. 36).  There was some concern that this 
     was a Cadence announcement, not an IBIS open-forum announcement.  
     Inquiries were to be directed to Karen 
     Kirkpatrick at Cadence.  The consensus of the forum is that this is 
     acceptable as long as Cadence shares customer IBIS inquiries with IBIS 
     members.  Pawel Chadzynski joined the meeting to tell us that they 
     had received only two inquiries from the article.
     
     A Cadence press release was printed in EDN 11/25/93, IBIS was 
     mentioned.
     
     A Japanese-language magazine printed an article featuring IBIS (one    
     paragraph in Technology News, a Nikkei Electronics publication). 
     Cadence and Mentor tools are discussed with Pentium(TM) processor 
     models from Intel and PowerPC models from Motorola/IBM.
     
     A/R: Kumar to get IBIS contact clarified from Cadence.  Cadence needs 
     to pass on customer inquiries, esp. semiconductor vendors, from the 
     EDN article to other IBIS companies.
     
     The IBIS Overview doc is in vhdl.org and available through FaxBack 
     through Intel customer Support.  Past IBIS minutes are also on 
     vhdl.org.  
     
     A/R: Derrick Duehren convert it to RTF and submit.
     
 3.  Enlisting new IC Vendors
     Jon Powell is talking to National Semiconductor.  He is working with  
     them to get models in IBIS format.  Jon is planning to assist Motorola 
     in creating IBIS models for the PowerPC next month.
     
     Will Hobbs read off the list of companies that requested IBIS 
     information since the last meeting.  17 total, including 10 IC 
     vendors:
     
     AT&T               Cypress
     Thompson SCF       Unicad (Bell Northern) 
     IBM                Motorola
     Micron             National Semiconductor 
     Sun                Network Systems
     Thomatronik        Rambus
     Texas Instruments  Tandem Computers
     EMC corp.          Loral Federal Systems (Radhard - space exploration)
     
     Someone said they would follow up with Cypress. (Kellee?)
     
     Bob Ward wanted to know who at TI requested the IBIS information.
     
     A/R: Will Hobbs to get the name to Bob. Done
     
     
 4.  Forms of EDA support of IBIS
     As of 1/7, Kellee was the only respondent so far to the request in 
     last month's minutes.  Will is still soliciting your descriptions of 
     how each simulator vendor supports IBIS, which I will pass on to 
     customers and the IBIS Open Forum, if you wish.
     
     Update:  Since the meeting, we have received input from Intusoft and 
     Interconnectix.
     
     Interconnectix:  Bob Ross says that the Interconnectix product will be 
     able to read IBIS Version 1.1 models directly (NATIVE MODE).  The 
     product will be able to read a text file composed of a library 
     of IBIS models.
     
     Intusoft:  Charles Hymowitz says that Intusoft takes a customer's 
     netlist or model and translates it into a spice model, free of charge. 
     They have the golden parser source but haven't, as of yet, automated 
     the process.  They're waiting until there are more IBIS models 
     available.
     
     A/R: Derrick to send separate email request.
     
 5.  BIRD 5.2, Pin Mapping for Ground Bounce Simulation
     After a flurry of reflector discussion on this BIRD in early December, 
     the email discussion died down in the last few weeks.  Eric Bracken 
     gave a summary of the major issues of the BIRD and the 
     differences between 5.0, 5.1, and 5.2.  After a short discussion, 
     attendees agreed that all issues had been ironed out on reflector.  
     Upon vote, it was unanimously approved.
     
     
 6.  Egg 1, mutual pin coupling
     Technical discussion of this Egg in IBIS 2.0 ensued.  EGG 1 (Eric 
     Bracken coined the term, reasoning that an EGG precedes a BIRD, so an 
     early discussion that may lead to a BIRD should be called an EGG) 
     dealt with mutual coupling between signals in the package.  Although 
     orthogonal to the pin mapping question (BIRD 5.2), it is related.  
     Eric's suggestion is to add an optional keyword and table 
     to IBIS that specifies mutual coupling.  Quoting the original mail 
     from Eric:
     
     [Mutuals]  Pin1  Pin2  Rmut  Lmut  Cmut
                 1     2     1e-3  1n    1p
                 1     3     1e-4  0.1n  0.1p
     
     Columns "Pin1" and "Pin2" contain numbers of pins which are coupled 
     together; the Rmut, etc. columns specify the values of the couplings.
     
     Not every coupling must be specified (in the interest of sparsity);  
     you can assume that the self-inductances have been specified in the 
     [Pin] section (talk about backward compatibility!)  And it all fits 
     into 80 characters.
     
     Chris Reed of Cadence has offered to write a BIRD on mutuals.  In the 
     meantime, we will continue this discussion on reflector. 
     
 7.  IBIS 2.0 Goals
     When is the right time to close on IBIS V2.0?  Concern was expressed 
     that 1.1 does not support ECL, whereas 2.0 will support ECL, a fairly 
     pressing need, which could drive us to early closure on 2.0.
     
     We need to get more semiconductor vendors on board first.  The fear is 
     that a new major revision to IBIS will scare off new semiconductor 
     vendors, who might perceive that IBIS is an unstable moving target.  
     (Of course, we understand our commitment to backward compatibility and 
     the fact that IBIS as it currently stands is highly functional.)  Jon 
     Powell proposed that we releasing 2.0 when 10 semiconductor vendors 
     come on board or in June, 1994, whichever occurs first. (A 
     semiconductor vendor on board is defined as 'people who say they are 
     developing models').  Several people volunteered to help vendors write 
     there first models.
     
     This plan was agreed to and is now the plan of record.
     
 8.  80 Column restriction?
     The arguments for staying within 80 columns (too many VGA users, email 
     concerns, printers that truncate long lines rather than wrap, 
     potential for errors in models when part of the data may be off the 
     edge of the screen) outweighed those for using longer line lengths.  
     Consensus is that 80-columns is a better common denominator.  General 
     agreement to use 80-col. until a specific insurmountable issue 
     arises that forces us beyond 80 characters per line.
     
 9.  Non-intrusive package parameter extraction
     Bob Ward summarized two papers discussing slow-speed, non-intrusive 
     extraction methods based on TDR (Time Domain Reflectometry).  An 
     engineer at TI produced a paper discussing immersion of components in 
     ultra-pure de-ionized water.  Pure water is non-conductive, but has a  
     very dielectric constant (~38), slowing down the signals so they can 
     be measured.  The measurements have to be taken very quickly because 
     the de-ionized water quickly becomes contaminated by the component and 
     the container.
     
     Bob Canright of Convex did a paper on a related subject.
     
     A/R: Bob Ward put both papers on reflector (with given permissions).  
     Bob may also conduct some of his own tests.
     
     Will Hobbs mentioned that at the Summit, Jon Powell talked about 
     creating AC V/I curves.  Jon said this idea didn't apply to 
     non-intrusive package parameter extraction because the method is used 
     to infer package parameters when customers already know full buffer 
     characteristics.  The ones who are in a position to apply this method 
     already have access to this information.
     
 10. Formal BNF notation
     We needed Randy Harr and Chris Reed for this discussion.  They were 
     not in the meeting.  Bob Ward summarized that lex (scan) and yacc 
     (parse) UNIX utilities can be used to parse IBIS files if a formal 
     BNF exists for IBIS.  Randy has done a preliminary BNF for IBIS, but 
     it needs to be completed.  We will continue this discussion over the 
     reflector.
     
 11. VIH, VIL Thresholds for Inputs, BIRD 2
     Jon is in crunch mode for a major release.  He won't be able to 
     address this issue until the end of the month, at which time he will 
     put together BIRD 2 and post it.
     
 12. Spice to IBIS Converter
     We need someone to do this converter development.  U of NC is 
     reportedly doing this work under their ARPA (Gov't) funding.  This 
     triggered discussion about analog simulation (Spice).  We need 
     conversions from any analog simulator, which would require a standard 
     format for the output, such as V/I pairs.  There is also the problem 
     that some simulators just generate wave forms, not tabular data.
     
     Quad Design has a utility that converts ASCII V/T V/I data into Quad 
     design models successfully.  Theoretically, the utility could also 
     generate IBIS models.
     
     We discussed the need for a cookbook on how to generate and validate 
     the IBIS data properly.  This is where guidance is badly needed, 
     specifications are needed.
     
     A cookbook is in process for use within Intel.  The cookbook discusses 
     how to generate data from both simulation and measurement, and how to 
     validate the models.  Although the document contains Intel proprietary 
     information, large sections could be used publicly.  Will Hobbs has 
     major sections in process, but they won't be ready for at least a 
     month.  We took a $5K SWAG at contractor-writer effort to complete the 
     cookbook.  Jon Powell proposed checking within organizations to see if 
     funding is available.  
     
     Many requested to be in the review cycle before publishing.
     
     A/R: Derrick to do cost estimate for the next meeting.
     
 13. Dues?
     The discussion on hiring a technical writer triggered a discussion on 
     how to fund such an effort.  Do we need an annual dues?  Some ideas 
     were tossed about: 
        Voting members pay dues?
        Cost figured by # of employees?
        Corp./individual memberships?
        Free for Universities?  
    The discussion was tabled.  We will continue the discussion on 
    reflector and in the next meeting.
     
    A/R: Each person to talk with their management/finance people about 
    funding/dues/comfortable contribution levels.
     
 14. 3D Modeling
     Arpad Muranyi had hoped to issues a BIRD on this subject but hasn't 
     gotten to it yet.  He did, however, initiate a discussion on the 
     topic.
     
     Can we make an assumption that each I/V/T curve is a scaleable curve?
     
     In Arpad's present 3D modeling approach, there are two current curves 
     and four time-related curves, six curves total.  A scaling function is 
     used to interpolate between the 2D curves to generate the surface 
     (family of V/T curves).  Arpad has done some work with this and gotten 
     good results with simple devices.  We felt that this simple approach 
     will probably work for standard CMOS, but will likely fall apart for 
     bi-polar devices.
     
     Bob Ward said TI has experience with extremely short channel lengths 
     and are seeing unexpected results, so simple CMOS scaling may fall 
     apart under these conditions.
     
     We recognized that a fair amount of R&D is required to further 
     understand this issue.  This could be a great opportunity to get a 
     University involved.  Simple scaling may be sufficient for now.
     
     A/R: Cadence, Intel, and a third company (Quad Design ?) [sorry, my 
     notes are unclear.  I was prying my laptop open with my Swiss army 
     knife during this discussion...] volunteered to work to get someone 
     from the U of NC to participate in these Open Forums.  Can they do 
     some of this work?
     
 15. New model_types (r-packs, etc.)
     When are input thresholds mandatory and when not?  Jon had previously 
     brought this up and offered to roll it into BIRD 2.1 as soon as he 
     gets off his release crunch.
     
 16. Modeling Feedback
     No worthy feedback yet.  Both TI and Intel have a stake in this but 
     can't share the data because of real-world propriety issues.
     
 17. Phased turn-on/off of multiple devices
     Jon will address this following his BIRD 2.1 work.  He will propose 
     including it in 2.1.  He should be able to get to this in March.
     
 18. Open Side Devices
     No discussion.  Kellee had left the meeting before this topic was 
     addressed.
     
 19. Other Updates (U of NC, DIE, etc.)
     Regarding Ravender's mail on extremely high frequencies, much 
     reflector activity is currently underway on this topic.  Will Hobbs 
     pointed out that frequency dependence is a significant layout issue.  
     Transmission lines have a built-in frequency-dependent impedance due 
     to skin effect.  Will said that some Intel engineers had been 
     struggling with this and felt that current simulation tools didn't 
     handle this.  There was general disagreement among attendees about 
     this.  Jon Powell said "Look up "skin effect" in the manual.  Most 
     felt that this is a non issue.
     
     There is still an open issue of package parameters.  Is it time to go 
     to transmission line representation?  This issue needs further study.
     
 20. Wrap-up, Next Meeting Plans
     
     New business:  The group agreed to move the meeting time to 8:15 am to 
     10:00 am. PMT
     
     Next meeting: 1/28/94
     
     
     
From ccm!Derrick_Duehren@intelhf.intel.com  Fri Jan 14 18:42:14 1994
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Date: Fri, 14 Jan 94 18:45:05 PST
From: Derrick Duehren <Derrick_Duehren@ccm.hf.intel.com>
Message-Id: <940114184505_2@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: How does your company support IBIS?


Text item: Text_1

 Date:    January 14, 1994

 From:    Derrick Duehren  (503) 696-4299, fax (503) 696-4904
          Email: Derrick_Duehren@ccm.hf.intel.com
          Third Party Vendor Program Manager
          Xceleration Tools Group
          (Will Hobb's IBIS Assistant)
          Intel Corporation

 Subject: Request for Support Information

 To:
 Anacad                        Petra Osterman
 AnSoft                        Henri Maramis*
 Atmel Corporation             Dan Terry
 Cadence Design                Sandeep Khanna, Chris Reed,
                               Pawel Chadzynski*, Kumar*
 Contec                        Maah Sango*, Dermott Lynch, 
                               Clark Cochran
 High Design Technology        Michael Smith
 HyperLynx                     Steve Kaufer, Kellee Crisafulli*
 Integrity Engineering         Greg Doyle, Wayne Olhoft
 Intel Corporation             Stephen Peters*, Don Telian, Will Hobbs*
                               Arpad Muranyi, Derrick Duehren*
 Interconnectix, Inc.          Bob Ross*
 Intergraph                    Ian Dodd*, David Wiens*
 IntuSoft                      Charles Hymowitz
 Logic Modeling Corp.          Randy Harr
 Mentor Graphics               Greg Seltzer, Ravender Goyal*
 Meta-Software                 Stephen Fenstermaker, Mei Wong* MicroSim
                               Arthur Wong, Jerry Brown, Graham Bell
 North Carolina State U.       Paul Franzon, Michael Steer
 Performance Signal Integrity  Vivek Raghawan, Eric Bracken*
 Quad Design                   Jon Powell*
 Quantic Labs                  Mike Ventham, Zhen Mu
 Siemens Nixdorf               Werner Rissiek, Ulas Rethneier*
 Texas Instruments             Bob Ward*
 Thomson-CSF/SCTF              Jean Lebrun
 Zeelan Technology             Hiro Moriyasu, George Opsahl, 
                               Samie Samaan,Tay Wu
 --------------------------------------------------------------------------

 How Does Your Company Support IBIS?

 Will Hobbs and I are gathering input to make a list of how the member 
 companies support IBIS.  Some vendors have created a product-specific 
 IBIS-to-their model converter, others accept native IBIS models, still 
 others may have written application notes describing how to use IBIS data 
 in their simulators.  Will asked for descriptions from everyone on how 
 their company supports IBIS.  This information will be given to our field 
 sales and applications engineers and marketing folks so we can answer 
 customer questions.  He also stated that if someone did not want to make 
 their information publicly available, we would still like the information 
 and would protect the information.

 Please describe how you support IBIS (converter, application note, native 
 IBIS models, etc.).  Send this information to Derrick Duehren, 
 Derrick_Duehren@ccm.hf.intel.com.  I will compile the information, and 
 make it available to the IBIS Open Forum, excluding that information which 
 the vendors do not wish to share publicly.

 To date, I have the following input from HyperLynx, Interconnectix, and 
 Intusoft:

 o IBIS support by Linesim Pro from HyperLynx:
   1) Any IBIS file can be used directly as a 'NATIVE' file by Linesim Pro
      Version 3.0 or newer.
   2) A single model in an IBIS file can selected, loaded and viewed 
      directly by LineSim Pro.
   3) Several IBIS models can be included in a single file and used as a 
      library.  Note: this library file still complies completely with the 
      IBIS specification and can be checked with the IBIS check program.

 o Interconnectix:  Interconnectix product will be able to read IBIS 
   Version 1.1 models directly (NATIVE MODE).  The product will be able to 
   read a text file composed of a library of IBIS models.

 o Intusoft:  Takes a customer's netlist or model and translates it into a 
   spice model, free of charge.  They have the golden parser source but 
   haven't, as of yet, automated the process.  They're waiting until there 
   are more IBIS models available.



From ccm!Charles_A_Anyimi@intelhf.intel.com  Mon Jan 17 18:12:05 1994
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From: Charles A Anyimi <Charles_A_Anyimi@ccm.hf.intel.com>
Message-Id: <940117181519_7@ccm.hf.intel.com>
To: ibis-request@vhdl.org, ibis@vhdl.org
Subject: intel.caanyimi@inside.intel.com


Text item: Text_1

     intel.caanyimi@inside.intel.com
     canyimi@pcocd2.intel.com
     
     This is a test to see if I will get on the IBIS reflector.

From ccm!Will_Hobbs@intelhf.intel.com  Wed Jan 19 13:40:40 1994
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From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940119134407_4@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: OPEN REVISION

Hello IBIS members:

Bob Ross sent this to me last week, I corrected the formatting changes 
the mailer made to it, then Bob sent me a revision.  I'm sorry I haven't 
gotten to the second re-formatting and posting of this BIRD sooner, but 
I've been fighting fires.  Please, do not use tabs when you submit BIRDS, 
do not exceed 80 characters, and please try to get it correct the first 
time.  This will help me a lot.  That said, ladies and gentlemen, here is 
BIRD 7 for your reading enjoyment.  But first, an introduction by Bob 
Ross.... (drum roll)....


Here is an attempt to reopen the open-side issue.  This does not address 
how the open devices are handled in the simulator, but rather, how they 
can be specified in a manner that covers all components.

If this BIRD is approved, then new Model_type selections are introduced 
for completeness.  This will make the [Model] documentation clearer and 
will be the favored method to specify "open" models.  It will not 
prevent any of the alternative methods that currently exist.

If this BIRD is not approved, then "Open_drain" stands alone and must 
be supported.  But for completeness and consistency, the alternative 
methods that currently exist would be the favored method for all "open" 
models.

Bob Ross, Interconnectix, Inc.

***************************************************************************** 
*****************************************************************************
                 Buffer Issue Resolution Document  (BIRD)

BIRD ID#:                XXXX
ISSUE TITLE:             Open Specification Completion 
REQUESTOR:               Bob Ross, Interconnectix, Inc. 
DATE SUBMITTED:          13 January 1994
DATE REVISED:
DATE ACCEPTED BY IBIS OPEN FORUM:     {will be filled in when accepted}

*****************************************************************************
*****************************************************************************
STATEMENT OF THE ISSUE:

Model_type "Open_drain" provides insufficient coverage for "open" sided
models.  For completeness, additional "open" Model_types are need.

******************************************************************************
STATEMENT OF THE RESOLVED SPECIFICATIONS:
Under the keyword [Model], additional Model_type selection choices are
given  They are Open_source, I/O_open_drain, and I/O_open_source.  Below
is a revision of the [Model] keyword specification in Version 1.1 edited to show
these Model_types.

|==============================================================================|
|     Keyword:  [Model]                                                        |
|    Required:  Yes                                                            |
| Description:  Used to define a model, and its attributes                     |
|  Sub-Params:  Model_type, Polarity, Enable, Vinl, Vinh, C_comp               |
| Usage Rules:  Each Input, Output, I/O, 3-state, Open_drain, Open_source,     |
|               I/O_open_drain, or I/O_open_source model must                  |
|               begin with the keyword [Model].  The model_name must match     |
|               the one that is listed under the [Pin] keyword and must not    |
|               contain more than 20 characters.  An .ibs file must contain    |
|               enough [Model] keywords to cover all of the model_names        |
|               specified under the [Pin] keyword, except for those            |
|               model_names which use reserved words (POWER, GND and NC).      |
|               Model_names with reserved words are an exception and           |
|               they do not have to have a corresponding [Model] keyword.      |
|               C_comp is allowed to use "NA" for the min and max values only. |
| Other Notes:  A complete [Model] description normally contains the following |
|               keywords:  [Voltage range], [Pullup], [Pulldown], [GND_clamp], |
|               [POWER_clamp], and [Ramp].  However, some models may have only |
|               a subset these keywords.  For example, an input structure      |
|               normally only needs the [Voltage range], [GND_clamp], and      |
|               possibly the [POWER_clamp] keywords.                           |
|               Note that C_comp defines the silicon die capacitance.  This    |
|               value should not include the capacitance of the package.       |
|                                                                              |
|------------------------------------------------------------------------------|
[Model]         model_name
Model_type      Input, Output, I/O, 3-state, Open_drain, Open_source,
I/O_open_drain, I/O_open_source         | List one only
Polarity        Non-Inverting, Inverting                | List one only, -if any
Enable          Active-High, Active-Low                 | List one only, -if any
| Signals       RAS, CAS, A(0-64), D(0-128),...         | Local list, -if 
desired
Vinl = 0.8V                             | input logic "low" DC voltage, -if any
Vinh = 2.0V                             | input logic "high" DC voltage, -if any
| variable      typ             min             max C_comp          12.0pF      
   10.0pF          15.0pF


*******************************************************************************
ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

Open-drain is corrected to Open_drain as a Model_type selection.  "Drain"
also is used for "collector", and "source" also is used for "emitter".

Certain pins could not be represented without the additional Model_types.
Bidirectional Open_drain pins exist in the SN74AS621, SN74ALS641, and other 
devices.  Open_source pins exist in some line driver components which support 
both a pullup and a pulldown (sink) output.  Examples include
the SN75116 and SN75118.  Furthermore, some ASICs support the Open_source 
configuration.  Thus Open_source is included.

ASICs could be configured as I/O_open_source.  Therefore this is included
for completeness.

The user may choose to model the "open" side directly through control of the
[Pullup] and [Pulldown] keyword.  Omission of [Pullup] is interpreted as 
Open_drain or I/O_open_drain.  Omission of [Pulldown] is interpreted as 
Open_source or I/O_open_source.

The user may choose to model the "open" side directly through control of the
[Pullup] and [Pulldown] data.  If all of the data contain I(typ) entries of 0mA 
(a minimum of two entries are required), then that operation could be 
interpreted as "open".  Zero valued [Pullup] data corresponds to Open_drain or
I/O_open_drain.  Zero valued [Pulldown] data corresponds to Open_source or 
I/O_open_source.

Without the additional Model_types, the above two approaches are the only
methods to specify "open" sides (other than Open_drain).  However the additional
Model_types do not prevent the above approaches to be used.

******************************************************************************
ANY OTHER BACKGROUND INFORMATION:

Jon Powell initiated the issue in Email of October 1993 questioning whether
we needed "I/O_OPEN_DRAIN" and I/O_OPEN_COLLECTOR".  He referred to the 
SN74ALS641 Open Collector Tranceiver as a specific example.

Kellee Crisafulli in Email of July 1993 considered "open output devices
(open-drain, open-collector, open-source)".  Furthermore, he referred to "open 
collector npn" and "open collector pnp" devices.  In the discussion, he proposed
new Optional (Required for open-side devices) keywords dV/dt_r_off (turn off 
time of high side driver) and dv/dt_f_off (turn off time of low side driver).  
Included it the discussion was the requirement that "If the pulldown table is 
missing then dV/dt_r_off is required" and "If the pullup table is missing then 
dV/dt_f_off is required".  Kellee elaborated further on the 
measurement/extraction issues of the ramp values.  This BIRD does not address 
the ramp specification.  This can be treated as a separate issue.  The 
assumption to date is that sufficient information is provided by the existing 
dV/dt_r and dV/dt_f specifications.

******************************************************************************

From 71436.1314@CompuServe.COM  Thu Jan 20 01:00:42 1994
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Date: 20 Jan 94 03:56:20 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: 10 db improvement at what frequency
Message-Id: <940120085619_71436.1314_HHB27-1@CompuServe.COM>

To:    ravender goyal
From: Kellee Crisafulli

Re:        Reply to:   RE>Do IBIS models support EMI 
10 db of difference at what frequency? One has to specify the freq when
you talk about the radiated power. I will have hard time to believe
that it was 10 db of difference from dc to optical freq. 

Response:
So would I.

The 10dB I spoke of came from one of our customers attempting to meet the 
FCC radiation limit.  The 10dB improvment was noted at several frequences 
which were either exceeding or nearly exceeding the FCC limit.   This is 
after all the point for many people.

The customer found that his product was nearly exceeding or was actually 
slightly exceeding the FCC limit before performing a signal integrity 
cleanup pass on his board (no termination etc.).  After cleaning up all his 
signals he was able to meet or exceed the safety margins needed to meet the 
FCC requirements.  The 10db was a relative improvement at the worst 
frequencies.  He considered this a nice side benefit to making his signals 
clean....

Have a great day.....  Kellee






From 71436.1314@CompuServe.COM  Thu Jan 20 01:02:06 1994
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Date: 20 Jan 94 03:56:43 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: BIRD 7
Message-Id: <940120085642_71436.1314_HHB27-2@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx

Re: BIRD 7

Bob, I basically like what you have proposed in BIRD 7 for the additional 
key words.  I have been going to send in a bird on this, but have been 
waiting for the results of an in-house project we are doing to develop some 
ABT models under IBIS.   We have nearly completed this project and I can 
report on this now.    I also have a few concerns with bird 7, 
specifically:

 1) I believe we absolutely must address the dv/dt issue for the turn off 
side.  We could do this by simply    stating explicitly in the 
specification that the dv/dt associated with opposite side is used as the 
turn-off         time of the open-side device.   However it must include a 
load specification during turn off.And specify this being valid for the a 
50 ohm pull to the opposite rail.

 2) I think it would be very useful to most semi-conductor companies 
developing models to require that      V/I table data match the model type 
exactly.  This way the IBIS parse can check it and help find errors         
       in manually entered data.

 3) If I am not mistaken CMOS has an open_drain p channel and an open_drain 
n channel device there is                no open_source configuration that 
I know of  unless you consider some of the 3 volt outputs with totem        
        pole type n-channel outputs.   Therefore the key word open_source 
may not be appropriate.  I propose instead that we use just Open_drain to 
indicate either an N channel/P channel, open collector, or open emitter 
type output.  The thing that differentiates them is simply the missing V/I 
data for the output.

HyperLynx now has IBIS simulations running of ABT buffers (FutureBus) which 
look pretty good.  These require the open_drain model type and have an 
additional offset for the output diode.  I therefore feel good about 


From 71436.1314@CompuServe.COM  Thu Jan 20 01:03:23 1994
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Date: 20 Jan 94 03:58:52 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: "INTERNET:slipa@eos.ncsu.edu" <slipa@eos.ncsu.edu>
Cc: IBIS ALL <ibis@vhdl.org>
Subject: Spice2IBIS
Message-Id: <940120085851_71436.1314_HHB25-1@CompuServe.COM>


To: Steven
From: Kellee Crisafulli, HyperLynx

Background (an EMAIL from Steven to myself and Randy):

   Hi.  My name is Steven Lipa.  I'm starting a Ph.D. here at NC State
under Michael Steer, and I am planning to work on behavioral modelling.
I worked in the jelly-bean IC industry (designing FAST, FACT, ECL, etc.)
for about 10 years so I am aware of some of the issues involved.  
Michael has asked me to get involved in the Spice2IBIS project

Hi Steven, I am very happy to hear from you we are extremely interested in 
you project.  I would be very happy to
help you any way I can.  I would be glad to send you a copy of the IBIS 
spec, a copy of the IBIS file checker,
a copy of the HyperLynx LINESIM PRO product to test your output files, and 
anything else I can do to help you.
I think both Randy and I as well as many others on the IBIS committee would 
be very intested in helping you with
comments, suggestions, ideas etc.  If you would like any of the above 
please let me know and give me your
physical address to send it to you

You sound like exactly the person we might be looking for to write the 
first version of the Spice2IBIS converter.

Do you have any "C" programming background?

What platform would you be developing code on?

Here's hoping your IBIS eggs can be converted to IBIS birds (a littel IBIS 
humor)........     Kellee


From Ravender_Goyal@pdxml1.mentorg.com  Thu Jan 20 15:44:35 1994
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Date: 20 Jan 1994 15:19:56 -0800
From: "Ravender Goyal" <Ravender_Goyal@pdxml1.mentorg.com>
Subject: on the ibis reflector
To: "ravender  goyal" <ibis@vhdl.org>
Cc: "chuck catto" <catto@wv.mentorg.com>

        Reply to:   on the ibis reflector

Can you please include Chuck Catto from Mentor Graphics Corp, in the
IBIS mail group. If you need to know more about Chuck, please send him
email! Chuck's e-mail address is chuck_catto@mentorg.com. Thanks......

Ravender



From ccm!Will_Hobbs@intelhf.intel.com  Thu Jan 20 18:25:09 1994
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Date: Thu, 20 Jan 94 18:28:38 PST
From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940120182838_9@ccm.hf.intel.com>
To: Don_A_Telian@ccm.hf.intel.com, Arpad_Muranyi@ccm.hf.intel.com,
        Ravender_Goyal@pdxml1.mentorg.com, ibis@vhdl.org
Cc: catto@wv.mentorg.com
Subject: Re: on the ibis reflector

        Ravender, and others,
        
        This request and others like it should be sent to ibis-request@vhdl.org. 
         I have forwarded this particular one, so you don't need to do anything 
        more.
        
        Will
        
        Reply to:   on the ibis reflector

Can you please include Chuck Catto from Mentor Graphics Corp, in the 
IBIS mail group. If you need to know more about Chuck, please send him 
email! Chuck's e-mail address is chuck_catto@mentorg.com. Thanks......

Ravender

From bob@icx.com  Thu Jan 20 18:56:58 1994
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From: bob@icx.com ( Bob Ross)
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To: ibis@vhdl.org
Subject: OPEN BIRD7 Comments

Kellee, In you comments on the "open" bird7, you have raised some 
interesting points.

The real issue is to specify whether the pullup is open or the pulldown
is open - i.e., "the missing V/I data for the output."  By knowning this,
the appropriate ramp can be interpreted for the turn-off transition.

"Open_drain" is already defined in IBIS Version 1.1.  Furthermore, in 
NOTES ON DERIVATION DATE #7, "The rise time of an open-drain device
must be measured into a 50 Ohm pullup resistor tied to the power pin."
Based on this, there is a strong implication that "Open_drain" means
open pullup.  However, I think you are technically correct in pointing
out that in CMOS logic, Open_drain is ambigous as to which side is
open - it could either the p-channel or the n-channel device.

The IEC logic symbol definitions for open outputs unfortunately give
little guidence in this area.  One is defined for "N-P-N open-collector or
similar output ...", and the other is for "N-P-N open-emitter or similar 
output ...".  Based on this, it would be ideal to use open_collector
and open_emitter generically to cover both bipolar and CMOS technologies
and to drop "Open_drain" as a Model_type.

On the other hand, I know of one example where "open source" and "open
drain" are used.  The Toshiba TC140G/14L/150G Series Macrocell data
book specifies open drain, open source, bidirectional open drain
and bidirectional open source output buffers.  (Actually these are 3-state
open drain and open source output buffers!)  I am faxing to you, Kellee,
some of the pages.  For terminology purposes the four Model types are
given for open pullup and open pulldown and the I/O versions of the same.
>From the circuits shown, I think you could argue that the names are
technically incorrect.

One part of the issue then is what terms should we use?  Are there
any common usage guidelines we could follow?  What I would like to see
is the best way to specify "open-pullup", "open-pulldown", "I/O-open-pullup"
(such in the ABT Futurebus line), and "I/O-open-pulldown" with, hopefully,
only four Model_types.  We should also specify "3-state-open-pullup" and
"3-state-open-pulldown" for completeness.

Regarding another point, I agree that the dV/dt of the off side has to be
specified.  The text of Note 7 above should be expanded.  Would this 
address your concern?

Bob Ross
Interconnectix, Inc.



From 71436.1314@CompuServe.COM  Fri Jan 21 00:14:45 1994
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Date: 21 Jan 94 03:09:34 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: BIRD 7 (more from Kellee Crisafulli)
Message-Id: <940121080933_71436.1314_HHB30-1@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx

To: Bob Ross, Bob Ward and fellow IBISers

Re: BIRD 7, Resending, (1/2 of the document was lost in the mail)

For some reason only 1/2 of my Email was transmitted.  I recreated the
the 2nd 1/2 from memory and am resending it.

Also, at the end of this document is my response to Bob's last message.

My apologies, I don't know where the other 1/2 landed ...
(perhaps in the IBIS bird bath)


Bob, I basically like what you have proposed in BIRD 7 for the additional
key words. I have been going to send in a bird on this, but have been
waiting for the results of an in-house project we are doing to develop some 
ABT models under IBIS.   We have nearly completed this project and I can 
report on this now.    

I also have a few concerns with bird 7, specifically:
  1) I believe we absolutely must address the dv/dt issue for the turn off
     side.  We could do this by simplystating explicitly in the 
     specification that the dv/dt associated with opposite side is used as 
     the turn-off time of the open-side device.   However it must include a 
     load specification during turn off. and specify this being valid for
     the a load resistor to the opposite rail.

  2) I think it would be very useful to most semi-conductor companies 
     developing models to require that V/I table data match the model type 
     exactly.  This way the IBIS parse can check it and help find errors in 
     manually entered data.

  3) If I am not mistaken CMOS has an open_drain p channel and an open_drain
     N channel device there is no open_source configuration that I know of
     unless you consider some of the 3 volt outputs with totem  pole type 
     N-channel outputs.  Therefore the key word open_source may not be 
     appropriate.  I propose instead that we use just Open_drain to indicate 
     either an N channel/P channel, open collector, or open emitter type 
     output.  The thing that differentiates them is simply the missing V/I 
     data for the output.

HyperLynx now has IBIS simulations running of ABT buffers (FutureBus) which 
look pretty good.  These require the open_drain model type and have an 
additional offset for the output diode.  I therefore feel good about 
recommending the use of IBIS for modeling open side devices.


I beleive we should modify BIRD7 as follows:
*********************************************

1) Modify the "Usage Rules" under the Keyword Model, to show Open_drain
   instead of Open-drain. (exactly as Bob suggested)

2) Add only one new keyword "I/O_open_drain" to the list in usage rules, 
   and the Model_type line.  This keyword allong with Open_drain can 
   represent all open side devices.  The absence of either the Pullup and 
   Pulldown V/I table can be used to indicate which side is open.

3) Change the section titled NOTES ON DATA DERIVATION METHOD as follows:

  Section 3 on Ramp rates:
  ------------------------
  3) Ramp Rates:
     The ramp rates (listed in AC characteristics below) should be derived 		
     as follows:
       1)Start with the silicon model, remove all packaging.

       2)If: The model type is one of the following: Output, I/O, or 3-state 
         Then: Attach a 50 ohm resistor to GND to derive the rising edge 
               ramp.
	       Attach a 50 ohm resistor to POWER to derive the falling
               edge ramp.

	 If: The model type is either (Open_drain or I/O_open_drain) and 
             the Pullup V/I table is missing.
         Then: Attach either a 50 ohm resistor or the vendor suggested 
               termination resistance to either POWER or the vendor suggested
               termination voltage.  Use this load to derive both the rising
               and falling edges.


         If: The model type is either (Open_drain or I/O_open_drain) and
             the Pulldown V/I table is missing.
         Then: Attach either a 50 ohm resistor or the vendor suggested
               termination resistance to either GND or the vendor suggested
               termination voltage.  Use this load to derive both the rising
               and falling edges.



	4-6) renumber these 3-5

	7) **** Delete item 7 ******

4) Under the Pullup, Pulldown keyword section in usage rules, add the
   following:

        If the model type is (Output, I/O, or 3-state) then both the Pullup
        and Pulldown V/I tables are required.

        If the model type is either (Open_drain or I/O_open_drain) then
        only one "Pull" V/I table (Pullup or Pulldown) may be present.


        
Postmortum:
-----------
After reading Bobs response to 1/2 of my Email I agree that the usage
of open_source is being used by some vendors in a somewhat confusing manor.
i.e. they call the open drain P channel devices open_source.  While I think
this is an inconsistant usage, I am willing to use Open_source and
I/O_open_source as Bob suggested if the entire IBIS group strongly perfers
this.

I DO NOT however want to choose a solution that deletes the existing
Open_drain model type as this is not backward compatible with the
specification.

Note: 3_state_open_drain is a redundant definition and is therefore not
needed. (i.e. open_drain by definition is 3-stated if it is off)


Summary:
--------
Using just two key words, Open_drain, and I/O_open_drain is simple, and
maintains backward compatibility, and covers all the cases so far...


P.S. thankyou for the Fax, Bob.

Best wishes to all...... Kellee





From 71436.1314@CompuServe.COM  Fri Jan 21 00:39:18 1994
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Date: 21 Jan 94 03:35:28 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: Bird 6, Differential signal spec, From Kellee Crisafulli
Message-Id: <940121083528_71436.1314_HHB27-1@CompuServe.COM>

From: Kellee Crisafulli

To: Bob Ross and fellow IBIS members

Re: BIRD 6 (differential pin spec proposal)


Bob it is really nice to see all the activity from you.  This is another
great start on an IBIS improvment.

I have read your BIRD and have the following concerns:

1) The use of the vpp term to indicate the threshold voltage seems like a
   good idea, however the vpp label is used alot for programmable devices
   to indicate a programming supply pin and I am concerned about confusion
   factor at semi-conductor houses.  How about "vdiff" or something
   similar?

2) Real output buffers will have pin to pin skew between the non-inverting
   and inverting pins.  It seems like this could be significant factor for
   proper modeling at higher speeds.  I say could because I have little
   experience with differential mode systems.  Do you think we need to
   consider a delay term with min, typ, max ?  Would any of the Semiconductor
   vendors care to comment on this (National, TI etc)?

3) Should we consider using the POLARITY specification that already exists
   instead of the negative voltage to indicate polarity?  e.g. we could require
   that both pins have either inverting or both pins have non_inverting polarity
   and only except positive diffential threshold voltages.

Great start Bob!

Kellee ..


From ccm!Arpad_Muranyi@intelhf.intel.com  Fri Jan 21 13:05:37 1994
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Date: Fri, 21 Jan 94 13:09:19 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.hf.intel.com>
Message-Id: <940121130919_8@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re: BIRD 7 from Arpad


Text item: Text_1

Dear IBIS watchers,

It seems to me that it really does not matter whether that open 
something is a DRAIN, or SOURCE, or COLLECTOR or EMITTER.  That is 
described by the V/I curve.  All we need to tell the simulator is 
whether the particular element that is left there in the device is 
connected to POWER or GND.  I feel we should either use JUST ONE of the 
existing terms, such as open drain, or open collector in a general (and 
somewhat inaccurate) manner, or we might coin a new term that means what 
we want to say without aggrovating those of us who like to mean what we 
say.  In either case, ONE keyword (or subkeyword, whatever it is) should 
be sufficient to achieve the goal.

Something like "open pulldown" could replace "open drain" and an 
additional "open pullup" might take care of all possibilities.  (Unless 
I am missing the point).  We can figure out how to spell them later if 
we decide on these terms.

Otherwise I agree with the intent of the BIRD.

Arpad

From cpk@Cadence.COM  Fri Jan 21 13:20:34 1994
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Date: Fri, 21 Jan 94 16:17:45 -0500
From: cpk@cadence.com (C. Kumar)
Message-Id: <9401212117.AA02995@hot>
To: ibis@vhdl.org, Arpad_Muranyi@ccm.hf.intel.com
Subject: Re: BIRD 7 from Arpad


> 
> Dear IBIS watchers,
> 
> It seems to me that it really does not matter whether that open 
> something is a DRAIN, or SOURCE, or COLLECTOR or EMITTER.  That is 
> described by the V/I curve.  All we need to tell the simulator is 
> whether the particular element that is left there in the device is 
> connected to POWER or GND.  I feel we should either use JUST ONE of the 
> existing terms, such as open drain, or open collector in a general (and 
> somewhat inaccurate) manner, or we might coin a new term that means what 
> we want to say without aggrovating those of us who like to mean what we 
> say.  In either case, ONE keyword (or subkeyword, whatever it is) should 
> be sufficient to achieve the goal.
> 
> Something like "open pulldown" could replace "open drain" and an 
> additional "open pullup" might take care of all possibilities.  (Unless 
> I am missing the point).  We can figure out how to spell them later if 
> we decide on these terms.
> 
> Otherwise I agree with the intent of the BIRD.
> 
> Arpad
> 

I thought that the ECL bird provided for explicit referencing and solved
this problem.

- kumar

From bob@icx.com  Fri Jan 21 16:06:55 1994
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Date: Fri, 21 Jan 94 14:59:56 PST
From: bob@icx.com ( Bob Ross)
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To: ibis@vhdl.org
Subject: BIRD 7 comment

Hello IBIS members:

Thanks, Kellee for the completed set of comments regarding Bird7.
You have presented a valid alternative proposal which saves adding
some new Model_types, yet produces the expanded functionality.

I think, however, "open-drain" is commonly understood to mean
open pullup for CMOS devices.  I have never seen used to describe
an open pulldown configuration.  I am open to any terminology 
improvement, but agree with you that at least "Open_drain" should
be retained for compatiblity.  Assuming "Open_source" is adopted,
I want to lay out a table with respect to a little item I introduced
and you commented on: 3-state open outputs.

The issue actually relates to the Vinh and Vinl Sub-Params of
[Model] and also to "Terminator" specification - issues Jon Powell
have raised in past Email.  Assume we have the "open-source" 
model_types and an additional one called "Terminator".  Then a table
can be drawn providing reasonably complete coverage and consistency.

Model_type:

Terminator    Output       3-state     |   I/O               Input
              Open_drain   3-state_OD  |   I/O_Open_drain
              Open_source  3-state_OS  |   I/O_Open_source
	                               |
Vinh, Vinl not required                |   Vinh, Vinl required

                          | pullup and pulldown disable   |
                          | option in simulator           |
                          | (manual or automatic)         |

Functionally there really is no need for any 3-state designation or
in many cases even the Output designation.  The I/O designation
and the existence of Vinh and Vinl is sufficient to cover practical
modeling cases.  The state that and I/O or 3-state model is in can be
external to the component.  However, common data book terminology plus terms
used in IBIS Version 1.1 argue for Output and 3-state.  So what I
am doing is just filling out the table for the "open" cases in a
consistent manner for explicit specification versus derived 
specification, hopefully consistent with common practice.  Furthermore,
I am reserving some Model_type words in case we really need them.

Actually, at this time I favor continuing making Vinh and Vinl 
optional for all cases because I think some I/O models can be "disabled"
into a high Z mode without input.  Furthermore, the Input could then
also designate a "terminator" functionality if Vinh and Vinl were not
specified.  With Version 1.1, a diode terminator package such as 
the SN74S1050 can be represented using Input models and the POWER_clamp
and GND_clamp data.  However, for explicit specification, I would not
mind adding "Terminator" to the list of Model_types.

Briefly regarding terminators, I favor expanding the keyword list that
would be placed under [Model] to include [Rpower] and [Rgnd] for parallel
terminator specification and terminators to ground (and also pullup
resistors for open devices).  Then a package such as the Motorala MCCS142233 
9-Bit Switchable SCSI Passive Bus Terminator (220 Ohm and 330 Ohm) can
be modeled without using extended clamping data.  Furthermore, I think
AC terminators should be modeled.  Anyway, all of this is probably a
basis for another Bird per discussions next week.  

This points out that a lot of issues are closely related, and getting
them all on the table will give a better overall resolution. 

Bob Ross
Interconnectix, Inc.




From speters@ichips.intel.com  Fri Jan 21 16:19:33 1994
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To: ibis@vhdl.org
Subject: More on BIRD #7
Date: Fri, 21 Jan 1994 16:17:49 -0800
From: Stephen Peters <speters@ichips.intel.com>


Hello fellow IBISans  --

While reading Kellee Crisafulli's e-mail this morning (1/21), regarding
BIRD #7 and detailing how to measure the ramp rates for the various
type of outputs, it stuck me that nowhere have we specified how to measure
the ramp rate when dealing with ECL.  Although ECL has an output type of
Output or I/O, the ramp time is not measured with the same technique as
used for standard totem-pole outputs.  I agree completely with Kellee that
expanding Section 3 on ramp rates is needed and I would add the following:
(my additions to Kellee's list are shown with a "++").

-------------
 Section 3 on Ramp rates:
  ------------------------
  3) Ramp Rates:
     The ramp rates (listed in AC characteristics below) should be derived
     as follows:

       1)Start with the silicon model, remove all packaging.

       2)If: The model type is one of the following: Output, I/O, or 3-state
          ++ and is not ECL.
         Then: Attach a 50 ohm resistor to GND to derive the rising edge 
               ramp.
	       Attach a 50 ohm resistor to POWER to derive the falling
               edge ramp.

     ++  If: the output type is Output or I/O and is ECL
     ++  Then:  Attach a 50 ohm resistor to the termination voltage 
     ++         (Vterm = VCC - 2v).  Use this load to derive both the
     ++         rising and falling edges.

	 If: The model type is either (Open_drain or I/O_open_drain) and 
             the Pullup V/I table is missing.
         Then: Attach either a 50 ohm resistor or the vendor suggested 
               termination resistance to either POWER or the vendor suggested
               termination voltage.  Use this load to derive both the rising
               and falling edges.


         If: The model type is either (Open_drain or I/O_open_drain) and
             the Pulldown V/I table is missing.
         Then: Attach either a 50 ohm resistor or the vendor suggested
               termination resistance to either GND or the vendor suggested
               termination voltage.  Use this load to derive both the rising
               and falling edges.


	4-6) renumber these 3-5

	7) **** Delete item 7 ******
----------------------

     Best Regards,
     Stephen Peters
     Intel Corp.






From bob@icx.com  Fri Jan 21 18:31:55 1994
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From: bob@icx.com ( Bob Ross)
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To: ibis@vhdl.org
Subject: BIRD6 comment

Hello again IBIS flock:

Thanks Kellee for your comments, I agree with your "vdiff" terminology
change, or whatever people feel is best.  Also, you raised a good
point regarding differential skew.  For example, the National
DS3695A/DS3695AT/DS3696A/DS3696AT Multipoint RS485/RS422 Tranceivers
in the Interface Databook specify this and show a waveform.  Another
column could be added for this in [Diff_pin].

I think using the POLARITY in the model instead of the sign of "vdiff"
is a good alternative.  In that way the polarity of of "vdiff" could be
reserved more appropriately for a hypothetical differential device with 
differential hysterisis (although I have not found such a device).

In doing Bird6, I had a problem in choosing whether one [Model] could
be used or two [Model]s were required, one for Positve and one for Negative
Polarities.  In its present form, two [Model]s (even different models -
and I have seen cases where complementary outputs in some latches differ) can
be used if necessary, but one [Model] is sufficient.  Your POLARITY 
specification method would work for both cases.

Bob Ross
Interconnectix, Inc. 


From ccm!Will_Hobbs@intelhf.intel.com  Mon Jan 24 14:01:44 1994
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From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940124140229_33@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Bridge Number for Friday's phone conference


Text item: Text_1

IBIS folk,

The next IBIS teleconference is this coming Friday.  Per our last meeting, we 
have moved the time up to 8-10 Pacific time (that is one hour earlier than it 
used to be).  We will be sending out an agenda later this week.

Jan. 28th       8-10    Bridge: 415-904-8944 - Res. 657903

Call the bridge, ask for the IBIS Open Forum and give the reservation number.

I look forward to hearing your voices on Friday, and I strongly encourage people
to join us who have not previously called in, particularly other IC vendors.

Regards,

Will Hobbs

From bob@icx.com  Mon Jan 24 16:40:20 1994
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Date: Mon, 24 Jan 94 13:48:58 PST
From: bob@icx.com ( Bob Ross)
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To: ibis@vhdl.org
Subject: BIRD 7 Comment on ECL

Hello IBIS team:

After thinking about Kumar's question to Arpad Muranyi's and Stephen Peter's
recent ECL addition on ramp rates to Kellee Crisafulli's added notes, I want 
to list how we can identify ECL model types and its variations (e.g. ECL 
tied to a positive supply as in PECL) based on IBIS Version 1.1 and approved
BIRDS 3 and 4:

The IBIS Model is "ECL-type" if the pullup and pulldown "typical" reference
voltage values are the same. These values can be extracted from the model
and compared for equality.  Such an extraction would be based on the 
[Voltage range], [Pullup reference] and [Pulldown reference] typical_values 
and on which take precedence over the other.

Also, the equality can be tested based on satisfying one of the cases:

(1) [Pullup reference] typ_val = [Pulldown reference] typ_val
        | e.g. 5.V = 5.V regardless of [Voltage range] typ_val or
        | whether [Voltage range] keyword is not present

(2) [Voltage range] typ_val = [Pulldown reference] typ_val
     AND [Pullup reference] keyword not present

(3) [Voltage range] typ_val = [Pullup reference] typ_val = 0
    AND [Pulldown reference] keyword not present (default is 0V)

(4) [Voltage range] typ_val = 0
    AND [Pullup reference] and [Pulldown reference] keywords not present
    (default for pulldown reference is 0V)

I am not sure if an IBIS model can be considered ECL if the pullup or
pulldown data spans exactly a range from Vcc to Vcc - 2.2 because I do
not know whether "spanning the range" means that the data cannot exceed
this range.  (E.g., I may be able to get a good data point at Vcc - 2.3V.)

If "ECL-type" then [Pulldown] data follows Vtable = Vout - Vcc order.

It might be easier to consider Model_types "Output_ECL" and "I/O_ECL"
(and for completeness "Input_ECL" although "Input" works the same with ECL).  
BIRD 1 (which was replaced by BIRDS 3 and 4) originally proposed Model_type
"ECL".  

The real issue is how explicit should IBIS be in specifying the Model_type,
especially when such knowledge is critical in knowing how to interpret the
[Model] data.  A robust set of Model_type information can simplify the mapping
of the IBIS data into internal data structures which do not have to carry
the same level of distinctions.  The internal data structures can rely as
appropriate on other relationships and still have the same functionality. 

Bob Ross
Interconnectix, Inc.


From 71436.1314@CompuServe.COM  Tue Jan 25 09:35:35 1994
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Date: 25 Jan 94 12:29:51 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: IBIS to Spice converter  (Important)
Message-Id: <940125172950_71436.1314_HHB64-1@CompuServe.COM>

From: Kellee Crisafulli

Greetings fellow IBIS designers and creaters!

This morning I spoke with Steve Lipa, the PHd student at NC state 
University working on the IBIS to Spice converter.
He is ready to get started.   He indicated he will check in with the 
reflector from time to time for suggestions and
to give us updates.  His project is funded.  He will be writting in 
standard 'C'.

We can help Steve in two ways:

1) Provide him with a document that shows what the current version 2 
specification is.  I am wondering if Will Hobbs would
    be willing to get a document together that contains all final versions 
of the accepted BIRDS.  I have had other people
    ask for this as well.

2) Any or all of the Semi-conductor people could gather their present SPICE 
model librarys or subsets and send Steve
    models to run the converter on.  (Perhaps Bob Ward at TI, and anyone 
else interested might contribute these)

Have a great day!




From ccm!Will_Hobbs@intelhf.intel.com  Tue Jan 25 10:08:28 1994
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Date: Tue, 25 Jan 94 10:09:05 PST
From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940125100905_3@ccm.hf.intel.com>
To: Don_A_Telian@ccm.hf.intel.com, Arpad_Muranyi@ccm.hf.intel.com,
        71436.1314@CompuServe.COM, ibis@vhdl.org
Subject: Re: IBIS to Spice converter  (Important)

Kellee, et al,

I will post all passed and pending BIRDs to the reflector this week.  Derrick 
and I are also putting all of them (passed, pending and voted down or 
superseded) into the archive on vhdl.org, and they should be there this week.

Will

From: Kellee Crisafulli

Greetings fellow IBIS designers and creaters!

This morning I spoke with Steve Lipa, the PHd student at NC state 
University working on the IBIS to Spice converter.
He is ready to get started.   He indicated he will check in with the 
reflector from time to time for suggestions and
to give us updates.  His project is funded.  He will be writting in 
standard 'C'.

We can help Steve in two ways:

1) Provide him with a document that shows what the current version 2 
specification is.  I am wondering if Will Hobbs would
    be willing to get a document together that contains all final versions
of the accepted BIRDS.  I have had other people
    ask for this as well.

2) Any or all of the Semi-conductor people could gather their present SPICE 
model librarys or subsets and send Steve
    models to run the converter on.  (Perhaps Bob Ward at TI, and anyone
else interested might contribute these)

Have a great day!

From slipa@eos.ncsu.edu  Wed Jan 26 14:54:31 1994
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From: slipa@eos.ncsu.edu
Message-Id: <9401262252.AA13063@rand.ece.ncsu.edu>
To: ibis@vhdl.org
Subject: SPICEtoIBIS convertor
Date: Wed, 26 Jan 94 17:52:46 EST

Dear IBIS Community:

     I am trying to write a SPICE to IBIS converter that
will be of use to the IBIS Community (IC) and prospective members
of the IC.   I am writing to you to solicit opinions and other 
information that might be helpful in making the product useful 
to the largest possible audience.   

     To begin with, my understanding is that there is not yet a written 
specification for the converter.    Therefore, let me present my
own mini-specification and a couple of concerns I have:

                      SPICEtoIBIS mini-specification
                      ------------------------------

     Purpose:  SPICEtoIBIS accepts a commented SPICE input deck;
               runs the necessary SPICE simulations to generate
               Pulldown, Pullup, GND_clamp, POWER_clamp, and Ramp
               tables with typ, min and max columns using the
               NOTES ON DATA DERIVATION METHOD section from
               version 1.1; and uses the comments in the SPICE
               deck and the SPICE output data to generate a
               syntactically-correct IBIS 1.1 model.   [Pin]
               information will be entered at the beginning of
               the SPICE deck using standard IBIS syntax except
               that an extra column is added to any line that
               describes a pin to be included in the IBIS model,
               and of course all lines are preceded by the SPICE
               comment character.   Additionally, the first line
               of the input deck must be a comment line with
               BIPOLAR or CMOS somewhere on it.

                     ---------------------------------

      This seems pretty straightforward, but I have some concerns
about it and would greatly appreciate any comments, help, etc regarding
this mini-spec and/or the following concerns:


      1) Some Si vendors use .TNOM and separate .MODEL cards for each
         temperature simulated, and some may use one .MODEL for all
         temperatures and a .TEMP card alone.  On a related note,
         any vendor that does use .TNOM probably does not use 50 and
         100 degrees C models.  Is the converter required to figure
         out which technique is being used and kludge a reasonable
         .TNOM and .TEMP for whatever model is given, or is the vendor
         supposed to go to the bother of generating new models?

      2) What about BiCMOS devices?  (sorry if this is a dumb question...)

      3) Is it OK to use a constant step size in the tables, or is
         it really desirable to minimize the number of entries?

      4) Are there other features required?

     Ignoring the concerns listed above I can put something 
with a nominal amount of error-checking together in fairly short order,
but I hope to be able to provide you with a robust, general-purpose
tool, so I would greatly appreciate any comments and or suggestions
that you may have.   If anyone can send me examples of their SPICE
simulation files and/or associated IBIS models, this would be a great
help.  I assume that a wide variety of approaches are used,
and seeing as many examples as possible will help me to make a more
general-purpose tool.

     Thanks in advance for any help you can provide!


     Steve Lipa
     slipa@eos.ncsu.edu         

     919-515-3947


From ccm!Derrick_Duehren@intelhf.intel.com  Wed Jan 26 22:35:58 1994
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From: Derrick Duehren <Derrick_Duehren@ccm.hf.intel.com>
Message-Id: <940126223705_3@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: 1/28/94 IBIS Agenda


Text item: Text_1

     
                        IBIS Open Forum

                  Jan. 28th, 8:15-10:00 am PST
                    Bridge # (415) 904-8944
                     Reservation # 657903

        Note: When speaking, please identify yourself.

                         1/28/94 AGENDA

 8:15  Check-in
 8:20  Introductions of new IBIS members/participants     Hobbs
 8:25  1/7 minutes review                                 Duehren
       Opens for new issues                               All    
 8:35  Press updates                                      Hobbs/All
       Progress toward enlisting new IC vendors           All
       IBIS 2.0                                           Hobbs
       Forms of EDA support of IBIS                       Duehren
       IBIS Cookbook                                      Hobbs
       Dues?  For what?                                   Hobbs
 9:00  BIRD 6, Differential Pin Spec.                     Ross
       BIRD 7, Open Specification Completion              Ross
       Egg 1, mutual pin coupling                         Bracken
       Spice to IBIS Converter                            Lipa
 9:15  Canright paper                                     Ward 
       Formal BNF notation                                Reed, Harr 
       BIRD 2, VIH, VIL Thresholds for Inputs             Powell 
 9:30  3D Modeling (U of NC)                              Bracken, et. al. 
       High freq. $ EMI                                   Goyal, et. al.
 9:45  Phased turn-on/off of multiple devices             Powell
       Foils of IBIS Summit                               Hobbs
 9:55  Wrap-up, Next Meeting Plans                        Hobbs 

From bracken@valhalla.performance.com  Thu Jan 27 13:22:17 1994
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To: ibis@vhdl.org
Subject: Re: EGG 1.0
Date: Thu, 27 Jan 94 16:22:23 -0500
From: bracken@valhalla.performance.com


Fellow Avians:

  I've just returned to the net after some serious router down time.
Here's a little something to prompt discussions on the issue of how to
represent mutuals.  You'll recall that there are two proposals before
the forum: the EGG uses a "sparse" representation; the other proposal
from Cadence is to use a "banded matrix" approach.  One issue that has
been raised is how compact the two notations are.

  Both approaches assume some numbering of the pins from 1 to N.
Recall that the "banded" approach assumes that if you have two pins,
numbered I and J, then there is no coupling if the difference of the
two indices is greater than the bandwidth B.  So, for each pin from
1 to N (let's take the I'th) you just have B + 1 entries:  I's self
term, the mutual from I to I+1, I to I+2, ..., I to I+B.  There's no
need to list the indices of the pins in the table of mutual values.

  In the sparse approach, you explicitly indicate the indices of 
the two coupled pins, and then give the value of the mutual.  If
there's a coupling from pin 10 to pin 78, you write

	10 78	1.98237e-7

or something similar.  Clearly, the need to write the indices is
the source of overhead of this method.  It's also a source of clarity
for the human reader.

  In what follows, I've provided a little analysis of the storage
requirements in the two approaches for a specific case: that of a big
PGA.  The results of the comparison may prove surprising.

--Eric Bracken <bracken@performance.com>


Chris Reid of Cadence wrote in response to EGG 1.0:

>> As for representing mutuals, we are using banded-symmetric RLC
>> matricies. That is the form most 3-D field solvers deliver the result,
>> and it is an easy format to deal with in software. Eric's suggested
>> format is up to the task, but it is somewhat more verbose than
>> required, and requires more processing by the software.

I guess that the "verbosity" you're referring to is the need to include
the indices of the coupled pins before I give the values of the mutuals?
I would say this is the price of the increased generality; the couplings
don't need to be "banded" for this description to work.

As to how verbose it really is, I'm not so sure.  There are some
inefficiencies in the banded matrix approach.  Take the Intel
Overdrive processor for the Pentium.  It's a 273-pin PGA, with pins
laid out in 21 rows with up to 21 pins each.  Here's a simplified view
of how the pins are distributed:

          *  *  *  *  *  *  *  *  *  *  *  *  *

          *  *  *  *  *  *  *  *  *  *  *  *  *

          *  *  *  *  *  *  *  *  *  *  *  *  *

          *  *  *  *                 *  *  *  *

          *  *  *  *                 *  *  *  *

          *  *  *  *                 *  *  *  *

          *  *  *  *  *  *  *  *  *  *  *  *  *

          *  *  *  *  *  *  *  *  *  *  *  *  *

          *  *  *  *  *  *  *  *  *  *  *  *  *

Now think about it--if I number the pins in the first row 1, 2, 3,
..., 21, those in the second row with 22, 23, ..., 42 and so forth (of
course the numbering gets screwed up when you get to the "hole" in the
middle, but you get the drift), then the bandwidth of the matrix is
22.  That is to say, if you take (for example) pin 23 (the 2nd pin in
row 2), then it's coupled to the pins above (pins 1, 2, 3) the pins
beside (22, 24), and the pins below (pins 43, 44, 45).

Although there are only 8 nearest neighbors, the bandwidth is 22.
Therefore, the banded symmetric matrix representation will have 273
rows X 23 entries (22 mutuals + 1 self term), or

		6279 

entries total.  Remember that in the banded representation,
zero-valued entries that lie within the "band" still have to be 
listed explicitly.

Each of these entries is a triple (R,L,C) of floating point numbers.
If we can assume 10 characters per floating point number, that's 30
characters per banded matrix entry, or

		188,370		<-	Banded

characters total, not counting spaces and returns.

On the other hand, if I employ the "sparse" representation described
in the EGG, then the 273 pins have 8 neighbors + 1 self term, or 9
entries per pin, for a total of 273 x 9 = 2457 entries.  (Actually,
some pins obviously have fewer than 8 neighbors, which would be
exploited to further reduce the number of entries.)  Each entry
consists of 3 floating point numbers (10 chars each) and 2 integer
indices (3 characters apiece), or 36 characters per entry.  The total
file size is therefore 2457 x 36, or

		88,452		<-	Sparse

characters total.  This is just under half the size of the banded
representation.

Please note that I'm assuming BOTH approaches make use of symmetry,
which is only commonsense.

To be fair to the banded approach, it is possible to look at more
clever numbering schemes to reduce the bandwidth.  But this tends to
add more work for the people who are trying to build the models (which
they may be unwilling to expend) because those schemes are far from 
intuitive.


From cer@Cadence.COM  Thu Jan 27 13:34:43 1994
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Date: Thu, 27 Jan 94 16:31:43 -0500
From: cer@cadence.com (Christopher E. Reid)
Message-Id: <9401272131.AA02942@oahu>
To: ibis@vhdl.org
Subject: Mutuals : sparse vs banded

Eric,

Ok, you are right about the comparison between storage requirements
of a "sparse" versus a "banded" approach for parts with pins arranged
as you indicated. One could argue about how many such parts there are
and therefore which approach actually results in a shorter
"average" description over a large number of parts. However,
that discussion is probably pointless.

What is important is convenience to the supplier and user.
The banded-matrix approach is convenient because field solvers
tend to deliver their results that way. The "sparse" method is
(in some cases) easier to read.

We might consider supporting both methods, since the focus is
on convenience, and each method is better in certain cases.

Chris

From ccm!Will_Hobbs@intelhf.intel.com  Thu Jan 27 13:41:31 1994
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From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940127134217_7@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Bridge numbers for upcoming meetings


Text item: Text_1

Ibisers,

The bridge and reservation numbers for the next four meetings are listed below.
They will be listed again in the minutes.  Please note that we have changed the 
times for the meeting to 8:15 AM Pacific time out of deference to our East Coast
participants.

When you call into the meeting, as always, ask for the IBIS Open Forum and give 
the bridge operator the reservation number.

Will

IBIS - 8:15-10:00 AM Pacific time.
Date:      Bridge:         Res:
1/28       (415) 904-8944  657903
2/18       (415) 904-8800  661436
3/11       (415) 904-8944  661901
4/1        (415) 904-8944  661905


From 71436.1314@CompuServe.COM  Thu Jan 27 22:07:06 1994
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Date: 28 Jan 94 01:01:53 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: "Steve Lipa (SPICE2IBIS)" <slipa@eos.ncsu.edu>
Cc: IBIS ALL <ibis@vhdl.org>
Subject: Email from you to IBIS forum
Message-Id: <940128060152_71436.1314_HHB37-1@CompuServe.COM>

From: Kellee Crisafulli
To: Steve Lipa (NCSU)
RE: SPICE2IBIS

Good start Steve!

Regarding your questions:

      1) Some Si vendors use .TNOM and separate .MODEL cards for each
         temperature simulated, and some may use one .MODEL for all
         temperatures and a .TEMP card alone.  On a related note,
         any vendor that does use .TNOM probably does not use 50 and
         100 degrees C models.  Is the converter required to figure
         out which technique is being used and kludge a reasonable
         .TNOM and .TEMP for whatever model is given, or is the vendor
         supposed to go to the bother of generating new models?
Kellee -> It would be great if you could kludge together something.

      2) What about BiCMOS devices?  (sorry if this is a dumb question...)
Kellee -> Not a dumb question.   Which issues are you thinking of in 
particular?

      3) Is it OK to use a constant step size in the tables, or is
         it really desirable to minimize the number of entries?
Kellee->A constant step size is ok.  It may slow down the simulations 
slightly, however
           I don't believe this is a major problem.  If it simplifies your 
work do it.

      4) Are there other features required?
Kellee->I suggest a multiple step approach to this problem.

  Phase 1) (Understand the problem better) 
       Take input files from 2 or more vendors for a single CMOS device and
       write a translator.  (Keep it simple and get something that works)  
This
       will give us an excellent vehicle for commenting on the more 
advanced
       version.  Even hold the temperature a constant at 25 degrees C and 
don't
       worry about min/max for the first pass.  Document all places were 
more
       advanced features are needed as you go.  Report back to the IBIS
       forum and we can define a detailed Phase 2.   In the mean time the 
vendors can
       start using your work from phase 1.
		

  Phase 2) (Do it "right")
       Add support for more vendors spice models,  bipolar,ECL, BiCmos,
      and various open-side devices.
		


From ccm!Derrick_Duehren@intelhf.intel.com  Fri Jan 28 14:35:21 1994
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From: Derrick Duehren <Derrick_Duehren@ccm.hf.intel.com>
Message-Id: <940128143611_6@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: IBIS Membership Roster - Draft


Text item: Text_1


 IBIS Consortium Membership Roster - First Draft
 As of 1/28/94

 Administered by: Derrick Duehren, Intel Corp.
                  dduehren@ichips.intel.com
                  (503) 696-4299, Fax (503) 696-4904

 INSTRUCTIONS: Please fill in the information for your company below, 
 include:
 -  Complete company name
 -  Your name, or appropriate contact person or persons
 -  Any corrections/changes to what I already have
 -  Any additional types of information that you think is appropriate

 Then send your portion back to me at the above e-mail address.  Please 
 respond by 2/7/94.  I'll distribute an updated copy before our next meeting 
 on the 18th.  Thanks much.

 - Derrick

 =============================================================================

 Anacad
   Contact:  Petra Osterman
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 AnSoft
   Contact:  Henri Maramis
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 Atmel Corporation
   Contact:  Dan Terry
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 Cadence Design
   Contact:  Karen Kirkpatrick
   Email:    karenk@cadence.com
   Phone:    (508) 262-6448, Fax: (508) 262-6777
   Address:  
             
   Support:  
   
 Contec
   Contact:  Maah Sango
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 Digital Equipment Corp.
   Contact:  Barry Cats
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 High Design Technology
   Contact:  Michael Smith
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 HyperLynx
   Contact:  Kellee Crisafulli
   Email:    
   Phone:    
   Address:  
             
   Support:  The Linesim Pro product supports IBIS as follows:
             1) Any IBIS file can be used directly as a 'NATIVE' file
               (Version 3.0 or newer).
             2) A single model in an IBIS file can selected, loaded, and 
                viewed directly.
             3) Several IBIS models can be included in a single file and used 
                as a library.  Note: this library file still complies 
                completely with the IBIS specification and can be checked 
                with the IBIS check program.

 IBM-Motorola (PowerPC)
   Contact:  Lynn Warner, Soa Quoc
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 Integrity Engineering
   Contact:  Greg Doyle
   Email:    
   Phone:    
   Address:  
             
   Support:  The Integrity Simulators and Parasitic Extractor tools, SImnet, 
             SImnet X, and Autospice are shipped with an IBIS2IEI translation 
             program that enables any IBIS file to be directly converted for 
             use with the simulator or SPICE extractor.

             The next revisions of IEI programs, slated for delivery 2Q '94, 
             will support IBIS models in native mode.  A utility will be 
             provided to read, edit and view IBIS files directly.

  
 Intel Corporation
   Contact:  Will Hobbs
   Email:    hobbswil@ccm.hf.intel.com
   Phone:    (503) 696-4369,  Fax (503) 696-4210
   Address:  5200 NE Elam Young Pkwy, JF1-57
             Hillsboro, OR 97124
   Support:  Intel provides IBIS models for some of its components.  For a 
             list of supported components, send the following message to 
             archive@vhdl.org:
             path <your return email path>
             send pub/ibis/models/intel readme   index /pub/ibis/models/intel

 Interconnectix, Inc.
   Contact:  Bob Ross
   Email:    
   Phone:    
   Address:  
             
   Support:  Interconnectix product will be able to read IBIS Version 1.1 
             models directly (NATIVE MODE).  The product will be able to read 
             a text file composed of a library of IBIS models.

 Intergraph
   Contact:  Ian Dodd, David Wiens
   Email:    
   Phone:    
   Address:  
             
   Support:  

 IntuSoft
   Contact:  Charles Hymowitz
   Email:    
   Phone:    
   Address:  
             
   Support:  Intusoft takes a customer's netlist or model and translates it 
             into a Spice model, free of charge.  Intusoft has the Golden 
             Parser source but hasn't, as of yet, automated the process.  
             Intusoft is waiting until there are more IBIS models available.

 Logic Modeling Corp.
   Contact:  Randy Harr
   Email:    
   Phone:    
   Address:  
             
   Support:  

 Mentor Graphics
   Contact:  Ravender Goyal
   Email:    
   Phone:    
   Address:  
             
   Support:  Mentor supports IBIS by using Quad Design and Intel IBIS models.

  
 Meta-Software
   Contact:  Mei Wong
   Email:    
   Phone:    
   Address:  
             
   Support:  

 MicroSim
   Contact:  Arthur Wong, Jerry Brown, Graham Bell
   Email:    
   Phone:    
   Address:  
             
   Support:  

 National Semiconductor Corp.
   Contact:  Syed Huq
   Email:    
   Phone:    
   Address:  
             
   Support:  
   
 North Carolina State University
   Contact:  Paul Franzon, Michael Steer, Steve Lipa
   Email:    
   Phone:    
   Address:  
             
   Support:  Steve Lipa will be developing a Spice to IBIS converter.
             slipa@eos.ncsu.edu, (919) 515-3947

 Performance Signal Integrity
   Contact:  Eric Bracken
   Email:    
   Phone:    
   Address:  
             
   Support:  

 Quad Design
   Contact:  Jon Powell
   Email:    jonp@qdt.com
   Phone:    805-988-8250
   Address:  
             
   Support:  Quad Design has a translation program that translates from IBIS 
             format to Quad Design .mod format.  This translator uses the 
             Golden Parser code with enhancements to warn of malformed (yet 
             legal) models.  The translator supports user input to be able to 
             select from the min-typ-max range of IBIS data.  This program 
             (IBIS2XTK) is available now and will be generally distributed 
             with the XTK 5.2 release (available in Feb. 1994).

  
 Quantic Labs
   Contact:  Mike Ventham, Zhen Mu
   Email:    
   Phone:    
   Address:  
             
   Support:  

 Siemens Nixdorf
   Contact:  Werner Rissiek, Olaf Rethmeier
   Email:    
   Phone:    
   Address:  
             
   Support:  Siemens Nixdorf uses the simulation program FREACS (Fast 
             REflection And Crosstalk Simulator) for signal integrity 
             analysis within the EMC-Workbench.  Siemens can read IBIS 
             Version 1.1 files and translate the IBIS models  into FREACS 
             models.  Siemens usees an IBIS parser, developed by Siemens, 
             and a semi-automatic process for the parametrization of the 
             FREACS macromodels.  The translation of IBIS to FREACS is 
             available as a service for customers.  A fully automated process 
             will be developed when there are more IBIS models available.

             Additionally, so called 'reference lists' are set up that are 
             used by the interface (XLIN) between the EMC-Workbench and the 
             FREACS macromodel library.  These reference lists consist of 
             circuit informations in a special language named HINAC 
             (Hierachical Naming Convention), where macromodel data is 
             assigned to pins of a component using IBIS informations, as 
             well.

             In this way a controlled set-up of a library is possible using 
             IBIS-files as a basis.

             If necessary we will send more detailed information at any time.

 Texas Instruments
   Contact:  Bob Ward
   Email:    bward@dadhb1.ti.com
   Phone:    (713) 274-4146, Fax (713) 274-3911
   Address:  
             
   Support:  TI has a three-pronged attack on IBIS support.  TI is working on 
             a scheme to automatically generate IBIS models from TI Spice 
             simulations (TI's proprietary Spice dialect), on an automatic 
             means to generate C code to be linked in to TI Spice as a User 
             Defined Element from an IBIS model, and an automatic means to 
             create the Spice equivalent of the IBIS model from the IBIS 
             model specification.
   
             The latter method differs from the second in that it uses 
             skeletonized Spice primitive elements in the form of a 
             subcircuit, while the second actually generates C code and 
             compiles it for dynamic linking.

 Thomson-CSF/SCTF
   Contact:  Jean Lebrun
   Email:    
   Phone:    
   Address:  
             
   Support:  

 Zeelan Technology
   Contact:  Hiro Moriyasu, George Opsahl, Samie Samaan, Tay Wu
   Email:    
   Phone:    
   Address:  
             
   Support:  



From bob@icx.com  Sat Jan 29 21:15:52 1994
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	id AA21243; Sat, 29 Jan 94 21:15:52 PST
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Date: Sat, 29 Jan 94 19:56:44 PST
From: bob@icx.com ( Bob Ross)
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	id AA14603; Sat, 29 Jan 94 19:56:44 PST
Message-Id: <9401300356.AA14603@icx.com>
To: ibis@vhdl.org
Subject: BIRD 6.1

Hello IBIS members:

Here is an updated BIRD6.1 to reflect the discussed and emailed changes.
I would appreciate any comments or corrections from Kellee, Syed, Bob Ward,
Jon, and anyone else as to whether this version meets the simulator needs
and also contains information that is easily available from data sheets and
from vendors.  I am particularly concerned that "tskew_min" is meaningful.
I am also concerned whether the normal test setup for tskew in data books
which include 50pF/100pF loads gives overly pessimistic values.  If you wish,
you can reach me at (503) 684-6641, fax (503) 639-3469 or send email.

Changes: vpp renamed to vdiff, and polarity specification modified.
         tskew_typ, tskew_max, tskew_min columns added.
         Note regarding vinl and vinh removed since it was not relevant.
         Analysis Path text revised and expanded.

Note on vdiff notation:
    Motorola uses Vpp in ECLinPS family
    TI uses VT+ and VT- in Data Transmission Circuits Family
    National uses VTH in Interface Databook 

Bob Ross, Interconnectix, Inc.

***************************************************************************** 
*****************************************************************************
                 Buffer Issue Resolution Document  (BIRD)

BIRD ID#:                6.1
ISSUE TITLE:             Differential Pin Specification 
REQUESTOR:               Bob Ross, Interconnectix, Inc. 
DATE SUBMITTED:          12 January 1994
DATE REVISED:            29 January 1994
DATE ACCEPTED BY IBIS OPEN FORUM:     {will be filled in when accepted}

******************************************************************************
******************************************************************************
STATEMENT OF THE ISSUE:

  Several components contain pins which operate in a differential mode with
respect to other pins.  Since this operation in inherent to a component, 
the IBIS document should be extended to specify this functionality.

******************************************************************************
STATEMENT OF THE RESOLVED SPECIFICATIONS:

  An additional optional keyword, [Diff_Pin], is added to the specification.

|========================================================================== 
|    Keyword:  [Diff_Pin]
|   Required:  Optional
|Description:  Used to associate differential pins, their peak-to-peak 
|              differential voltages and timing skews.
| Sub-Params:  inv_pin, vdiff, tskew_typ, tskew_min, tskew_max
|Usage Rules:  Entries follow these rules: Only differential pin pairs
|              are entered.  The [Diff_pin] column contains a non-inverting 
|              pin number and the inv_pin column always contains the
|              corresponding inverting pin number for output and I/O output. 
|              The vdiff column contains the specified peak-to-peak voltage
|              between pins if the pins are Input or I/O Model_types.
|              For Output only differential pins, the vdiff entry is 0V.
|Other Notes:  The output pin polarity specification in the table overrides 
|              the [Model] Polarity specification such that the pin in the
|              [Diff_pin] column will be Non-Inverting and the pin in the 
|              inv_pin column will be Inverting.  This convention allows
|              one [Model] to be used for both pins. 
|
|              Column length limits are:
|                      [Diff_Pin]        5 characters max 
|                      inv_pin           5 characters max 
|                      vdiff             9 characters max 
|                      tskew_typ         9 characters max
|                      tskew_min         9 characters max
|                      tskew_max         9 characters max
|
|              Each line must contain either four or six columns.  If "NA" is
|              entered in the vdiff, tskew_typ or tskew_min columns, its
|              entry will be interpreted as 0V or 0ns.  If "NA" appears in
|              the tskew_max column, its value will be interpreted as the
|              tskew_typ value.  When using six columns, the headers 
|              tskew_min and tskew_max must be listed.
|--------------------------------------------------------------------------- 
[Diff_Pin]  inv_pin  vdiff   tskew_typ tskew_min tskew_max
|
 3           4       150mV     1ns       0ns       2ns  | Input or I/O pair
 7           8         0V      1ns        NA        NA  | Output* pin pair
 9          10         NA       NA        NA        NA  | Output* pin pair
16          15       200mV     1ns    | Input or I/O pin pair 
20          19         0V       NA    | Output* pin pair, tskew = 0ns
22          21         NA       NA    | Output*, tskew = 0ns
                                      | * Could be Input or I/O with vdiff = 0V

******************************************************************************
ANALYSIS PATH/DATA THAT LED TO SPECIFICATION

  Since only a small percentage of components contain differential pins,
[Diff_Pin] is optional.  The component itself may be required to convey the
associations between pins for differential inputs and/or outputs.  Such cases
may occur in practice when pairs of pins are connected using closely-spaced,
coupled nets or twisted-pair cabling.

  Pins which provide complimentary outputs should not be associated with
each other when the analysis is normally done using only one pin at a
time.  However, there may be cases related to other pending extensions
(package models, power association, etc.) where association of complimentary
pins may be appropriate.

  [Diff_pin] should be used for pins designed for differential operation.
Inputs of such components have a differential input sensitivity specification 
such as "Vpp" or "VT+" and "VT-" which defines a peak-to-peak voltage between 
two input pins.  The vdiff column is introduced for such specification 
limits (as a positive value) which would trigger an output transition.  One
application is for timing analysis.


 |<-- OUTPUT MEASUREMENT POINT FROM ANOTHER COMPONENT
 |
 |
 |<-- tmax -->|
 |            |
 |<-- tmin ->||
 __________  ||  ____________ __
           \ || /             A0
          __\||/__             
             \/    vdiff       DIFFERENTIAL INPUT
          __ /\ __
            /  \
 __________/    \____________ A0


  For timing purposes, an output is referenced to an equal voltage cross-over
of output pins.  Setting the vdiff entry to 0V is thus chosen when the pins
are for differential outputs only.  Note, the cross-over does NOT mean that
the outputs are at 0V.

  The tskew value is the time difference between the mid-point of the two
output transitions.  It is equivalent to the time-delay of one pin relative 
to the other pin.  Although an absolute value is specified, either pin can
delayed relative to the other pin.  This specification assumes the outputs 
are reasonably identical and the rise and fall transitions are reasonably
similar. 

  Tskew can be shown per National Interface Databook, diagram on pg 1-121:

       3V _______________
         /               \  INPUT TO SAME COMPONENT
 1.5V__ /                 \
       /|                 |\
0V ___/ |                 | \______________
        | tPLH |          |tPHL|  
 ___________        __________    _________ __
 ^     ^    \      /          \  /     ^    D0
 |    Vo/2   \    /            \/     Vo/2
Vo     v______\  /__        __|/\|_____v        DIFFERENTIAL OUTPUT
              |\/|            /  \
 |            |/\|           /|  |\
 v____________/  \__________/ |  | \_______ D0
              |  |            |  | 
              |  | Tskew      |  | Tskew 
              
 Tskew = |tPLH - tPHL|             


  Conventions similar to those in [Pin] are followed with respect to required
and optional column entries and to column lengths.

******************************************************************************
ANY OTHER BACKGROUND INFORMATION:

  Introducing a [Tskew] keyword similar to [Package] (used for defaults) was
suggested and could be considered as another method for dealing with skew.

  An alternative polarity mechanism for differential outputs could have been
based on the Polarity sub-parameter within the [Model].  This was not done
because Polarity is optional and also because two [Model]s would be 
required: one for the "Non-inverting" pin and another for the "Inverting"
pin.  In BIRD6.1, vdiff is used as an absolute difference regardless of 
polarity for Input specfication, so "polarity" no longer is applicable for
inputs.

  However, it still may be reasonable to require two Output or I/O [Model]s 
for easier translation into simulator databases.  In this case, the "inv_pin"
name could be changed to "2nd_pin".  Also, with a Polarity sub-parameter, 
the possibility exists that the [Models] are in phase with each other.  This
may be useful for double strength buffer options.

******************************************************************************



From randyh  Sun Jan 30 00:22:28 1994
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Date: Sun, 30 Jan 94 00:22:28 PST
From: randyh (Randy Harr)
Message-Id: <9401300822.AA22442@vhdl.vhdl.org>
To: ibis@vhdl.org
Subject: Updated Intel model files


Intel has sent in updates for their i486(tm) and Pentium(tm) PCI chipset model
files.  See the directory pub/ibis/models/intel.  It took a little bit
of handwork to get them transferred and separated onto vhdl.org.  Please
let Stephen Peters (speters@ichips.intel.com) or myself (randyh@vhdl.org)
know if there are any problems.

randy harr

From 71436.1314@CompuServe.COM  Sun Jan 30 16:53:43 1994
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Date: 30 Jan 94 19:49:07 EST
From: Kellee Crisafulli <71436.1314@CompuServe.COM>
To: IBIS ALL <ibis@vhdl.org>
Subject: BIRD 6.1
Message-Id: <940131004906_71436.1314_HHB48-3@CompuServe.COM>

From: Kellee Crisafulli, HyperLynx Inc.

Re: Bird 6.1

This is a big improvement over 6.0, good work.

As I read through 6.1, I notice something that concerned how various
simulators would determine how to launch the waveform to make sure
the skew time is correct as measured at the center point of the
voltages.  I believe this will be very difficult to accomplish.  The
load values and differences in how various simulators launch the
edge transitions will probably cause the skew to be all over the
place.  The present output buffer specification does not specify
where the edge actually starts relative to t=0 seconds.  I know for
a fact that there is a difference between at least 3 of the simulators
that presently run IBIS files.

Could we reference this skew time to where the simulators launch
the edge changes.  This should roughly correlate to the center
points, however it may be slightly different depending on load
conditions and simulators.  This however would be reasonable for
all simulators.  The semiconductor companies could still measure
at the center point with a fixed load.  This will have some accuracy
errors, however I believe that keeping it simple will allow everyone
concerned to get it working quickly and easily and that is worth alot!

If we use this method, I believe we should specify how to measure it,
and how to simulate it.







From canright@neptune.convex.com  Mon Jan 31 07:22:10 1994
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From: canright@neptune.convex.com (Robert Canright)
Message-Id: <9401311520.AA24154@neptune>
Subject: Re: BIRD 6.1
To: bob@icx.com (Bob Ross)
Date: Mon, 31 Jan 94 9:20:29 CST
Cc: ibis@vhdl.org, integrity@neptune.convex.com
In-Reply-To: <9401300356.AA14603@icx.com>; from "Bob Ross" at Jan 29, 94 7:56 pm
X-Mailer: ELM [version 2.3 PL11]

> 
> Hello IBIS members:
> 
> Here is an updated BIRD6.1 to reflect the discussed and emailed changes.
> I would appreciate any comments or corrections from Kellee, Syed, Bob Ward,
> Jon, and anyone else as to whether this version meets the simulator needs
> and also contains information that is easily available from data sheets and
> from vendors.  I am particularly concerned that "tskew_min" is meaningful.
> I am also concerned whether the normal test setup for tskew in data books
> which include 50pF/100pF loads gives overly pessimistic values.  If you wish,
> you can reach me at (503) 684-6641, fax (503) 639-3469 or send email.


Regarding your statement:
"I am also concerned whether the normal test setup for tskew in data books
 which include 50pF/100pF loads gives overly pessimistic values."

If data book numbers are copied into IBIS models without verifying 
simulation vs. time-domain measurements, then the data book capacitance
numbers could lead to faulty simulations.  Faulty simulations, even if they
do provide conservative results, are a nuisance.  We don't like finding out
that we have spent labor fixing problems that didn't really exist.

We rank models based on our confidence in them & models created from data
book info have the lowest ranking.  The same driver with 2 different
package models can have very different waveforms.  If an IBIS model uses
data book info, the model should have a disclaimer to say so.

-- 
Bob Canright		Convex Computer Corp.	Richardson, Texas
214-497-4474 (desk)	canright@convex.com	214-497-4500 (FAX)
disclaimer:
It's not my typing, the Sun keyboard repeeeatsss.

From ccm!Will_Hobbs@intelhf.intel.com  Mon Jan 31 15:19:19 1994
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Date: Mon, 31 Jan 94 15:17:48 PST
From: Will Hobbs <Will_Hobbs@ccm.hf.intel.com>
Message-Id: <940131151748_13@ccm.hf.intel.com>
To: Don_A_Telian@ccm.hf.intel.com, Arpad_Muranyi@ccm.hf.intel.com,
        canright@neptune.convex.com, bob@icx.com
Cc: ibis@vhdl.org, integrity@neptune.convex.com
Subject: Re[2]: BIRD 6.1

Bob, et al,

Just to reassure you, the main reason IC vendors' participation is so crucial to
IBIS is that they have the proper equipment and design and technology databases 
needed to create the IBIS models.  Some companies also can generate them from 
characterizing ICs.  To date, I am unaware of anyone creating an IBIS model from
published data book data, except when the data was already in IBIS format, such 
as the 82430 PCIset from Intel.  Regarding where to get tskew information, 
again, I don't feel the data books are the right place to go, either.

Regards,

Will Hobbs
Intel Corp.
>
> Hello IBIS members:
>
> Here is an updated BIRD6.1 to reflect the discussed and emailed changes.
> I would appreciate any comments or corrections from Kellee, Syed, Bob Ward, 
> Jon, and anyone else as to whether this version meets the simulator needs
> and also contains information that is easily available from data sheets and 
> from vendors.  I am particularly concerned that "tskew_min" is meaningful. 
> I am also concerned whether the normal test setup for tskew in data books
> which include 50pF/100pF loads gives overly pessimistic values.  If 
-you wish,
> you can reach me at (503) 684-6641, fax (503) 639-3469 or send email.


Regarding your statement:
"I am also concerned whether the normal test setup for tskew in data books
 which include 50pF/100pF loads gives overly pessimistic values."

If data book numbers are copied into IBIS models without verifying 
simulation vs. time-domain measurements, then the data book capacitance 
numbers could lead to faulty simulations.  Faulty simulations, even if they 
do provide conservative results, are a nuisance.  We don't like finding out 
that we have spent labor fixing problems that didn't really exist.

We rank models based on our confidence in them & models created from data 
book info have the lowest ranking.  The same driver with 2 different 
package models can have very different waveforms.  If an IBIS model uses 
data book info, the model should have a disclaimer to say so.

--
Bob Canright		Convex Computer Corp.	Richardson, Texas 
214-497-4474 (desk)	canright@convex.com	214-497-4500 (FAX) 
disclaimer:
It's not my typing, the Sun keyboard repeeeatsss.

From huq@rockie.nsc.com  Mon Jan 31 16:56:27 1994
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Date: Mon, 31 Jan 94 16:58:41 PST
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9402010058.AA04989@rockie.nsc.com>
To: ibis@vhdl.org
Subject: comments on BIRD 6.1
Cc: huq@rockie.nsc.com

Hi Bob Ross,
	I have read thru your BIRD 6.1 and have also seen some of the comments
	from other fellow IBIS members. Overall it looks good. 

	One thing I want to be clear about is [Diff_Pin] and inv_pin are for 
	a Differential receivers input pins and in that case vdiff is the 
	peak-to-peak voltage of the receiver inputs.

	vdiff can also be the differential output of a driver. In that case it
	is assiged 0V(differential not ground-just as your note says). 0 volts
	differential shows only the cross over points of the driver outputs.

	I know we only talk about skews but can Differential Prop delay be 
	measured thru the simulators. For example, for the driver this would
	mean the delay from 1.5V(input) to the 0v(differntial output).

	Also, last point, us semiconductor vendors do an extensive characterization
	on each device across Vcc, temp, process corners and package types to 
	gather data. We do not base our simulations on datasheet numbers only.
	Thanks Will for pointing that out too.

	If we create IBIS files, our data will be based on the above mentioned.

Regards,
Syed. 

