From owner-ibis  Tue Oct  1 16:45:30 1996
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Date: Tue, 1 Oct 96 16:12:28 PDT
From: peivand@qdt.com (Peivand Tehrani)
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To: ibis@vhdl.org
Subject: subscribe

please subscribe me in the ibis mailing list.

From owner-ibis  Thu Oct  3 09:11:49 1996
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Date: Thu, 3 Oct 1996 09:02:22 -0800
To: ibis@vhdl.org
From: crowen@siarc.com (Chris Rowen)
Subject: Request for contact

IBIS community:

I'd like to take a moment to introduce myself, to to make contact
on behalf of the steering working group of VSIA, the Virtual Socket
Interface Alliance.  The alliance is driving industry visibility and
standards for mix-and-match of macro blocks (virtual components)
for system-on-a-chip design.  I am the VP of engineering for Synopsys's
Design Reuse Group, Synopsys's representative to VSIA and chair of
the subcommittee on working groups.  Part of the charter of this
committee is to identify which are the technical areas of greatest
concern and importance to the design community in promoting the
flow of  "intellectual property blocks" inside and among companies.

To that end, I want to make contact with the IBIS participants and
understand how I/O buffers may play a role in macro block interchange.
I am eager to hear back with thoughts, suggestions or proposals
on the relevance of I/O buffers to interchange, the state of the
IBIS effort, and suggestions about how IBIS might interact with
VSIA, if there are areas of common interest.

Chris

Chris Rowen
crowen@synopsys
VP Engineering, Design Reuse Group
Synopsys, Inc.
700 East Middlefield Road
Mountain View, CA 94043-4033
tel  (415) 943 5264
fax (415) 943 5010
pager (415) 317 1105
mobile (408) 334 0361



From owner-ibis  Thu Oct  3 17:08:14 1996
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Date: Thu, 3 Oct 96 16:59 PDT
From: bob@icx.com ( Bob Ross)
To: crowen@siarc.com, ibis@vhdl.org
Subject: Re:  Request for contact

Chris:

On behalf of the IBIS community, I am willing to pursue further
discussion.  Furthermore, I can provide you with any information
you need concerning our actives and concerning the technical
details.  If you have not already done so, you can also get
information on our official home page

   http://eia.org/eig/ibis/ibis.htm

I am not familiar with your committee's activities, so I
cannot relate exactly how we may fit in.  Briefly, we 
have standardized the electrical chararcterization of
and I/O block to include parameters useful for electrical
analog simulation.  Our format is human-readable text.
While it could be configured as an "intellectual property"
block, that is not within the domain of the commitee's
activities.

Let us establish direct contact to pursue further discussions.
I need to learn more of VSIA.  Anyone else who is interested
in this subject is encouraged to contact Chris.

Best Regards,
Bob Ross
IBIS Open Forum Chair
Phone (503) 603-2523, Fax (503) 639-3469
bob@icx.com
Interconnectix, Inc., 10220 S.W. Nimbus Ave., K4, Portland, OR 97223



> Date: Thu, 3 Oct 1996 09:02:22 -0800
> To: ibis@vhdl.org
> From: crowen@siarc.com (Chris Rowen)
> Subject: Request for contact
> Status: RO

> IBIS community:

> I'd like to take a moment to introduce myself, to to make contact
> on behalf of the steering working group of VSIA, the Virtual Socket
> Interface Alliance.  The alliance is driving industry visibility and
> standards for mix-and-match of macro blocks (virtual components)
> for system-on-a-chip design.  I am the VP of engineering for Synopsys's
> Design Reuse Group, Synopsys's representative to VSIA and chair of
> the subcommittee on working groups.  Part of the charter of this
> committee is to identify which are the technical areas of greatest
> concern and importance to the design community in promoting the
> flow of  "intellectual property blocks" inside and among companies.

> To that end, I want to make contact with the IBIS participants and
> understand how I/O buffers may play a role in macro block interchange.
> I am eager to hear back with thoughts, suggestions or proposals
> on the relevance of I/O buffers to interchange, the state of the
> IBIS effort, and suggestions about how IBIS might interact with
> VSIA, if there are areas of common interest.

> Chris

> Chris Rowen
> crowen@synopsys
> VP Engineering, Design Reuse Group
> Synopsys, Inc.
> 700 East Middlefield Road
> Mountain View, CA 94043-4033
> tel  (415) 943 5264
> fax (415) 943 5010
> pager (415) 317 1105
> mobile (408) 334 0361





From owner-ibis  Wed Oct  9 07:29:14 1996
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Date: Wed, 9 Oct 96 16:18:41 +0100
From: cornelia@thesys.de (Cornelia Foss)
Message-Id: <9610091518.AA26556@s01.thesys.de>
To: ibis@vhdl.org
Subject: Problem with s2ibis2


To IBIS engineers

I have got a problem with s2ibis2 and can't solve it useing the 
documentation only.
I'm running s2ibis2 on a sparc station to create IBIS models 
based upon HSPICE files. Though I set Vinl to 0 and Vinh to 5, 
IBIS runs the HSPICE jobs with 0.8V and 2 V, respectively. 
Confusingly in the .ibs file appears "Vinl= 0" and "Vinh= 5".
I also defined [Sim time] to be 15ns but the .tran source is set to 
"PULSE(2 0.8 0 0 0 0 0)" and the analysis statement to ".tran 0 0".
Additionally it was a great help if you could tell me where I can 
find a descriptionof the "NoModel" option that is not documentated 
in the s2ibis2 docs.

I'm gratefully looking forward to any reply.

Kindest regards

Sascha Pawel. 


From owner-ibis  Wed Oct  9 14:08:48 1996
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Message-Id: <m0vB5j0-000GjSC@icx.com>
Date: Wed, 9 Oct 96 13:59 PDT
From: bob@icx.com ( Bob Ross)
To: cornelia@thesys.de, ibis@vhdl.org
Subject: Re:  Problem with s2ibis2

Sascha:

I do not have specific answers to your questions.  However, I
plan to put the s2ibis2 fixup issue on the IBIS Open Forum
agenda for the October 18, 1996 meeting.  Any ideas are
welcome.

Best Regards,
Bob Ross
Interconnectix, Inc.


> Date: Wed, 9 Oct 96 16:18:41 +0100
> From: cornelia@thesys.de (Cornelia Foss)
> Message-Id: <9610091518.AA26556@s01.thesys.de>
> To: ibis@vhdl.org
> Subject: Problem with s2ibis2
> Status: RO


> To IBIS engineers

> I have got a problem with s2ibis2 and can't solve it useing the 
> documentation only.
> I'm running s2ibis2 on a sparc station to create IBIS models 
> based upon HSPICE files. Though I set Vinl to 0 and Vinh to 5, 
> IBIS runs the HSPICE jobs with 0.8V and 2 V, respectively. 
> Confusingly in the .ibs file appears "Vinl= 0" and "Vinh= 5".
> I also defined [Sim time] to be 15ns but the .tran source is set to 
> "PULSE(2 0.8 0 0 0 0 0)" and the analysis statement to ".tran 0 0".
> Additionally it was a great help if you could tell me where I can 
> find a descriptionof the "NoModel" option that is not documentated 
> in the s2ibis2 docs.

> I'm gratefully looking forward to any reply.

> Kindest regards

> Sascha Pawel. 




From owner-ibis  Wed Oct  9 16:58:10 1996
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To: ibis@vhdl.org
Subject: IBIS packaging subcommittee
Date: Wed, 09 Oct 1996 16:47:24 -0700
From: Stephen Peters <speters@ichips.intel.com>


Hello All:

    The next meeting of the IBIS packaging subcommittee
will be this Friday, Oct 11.  Phone bridge details
are below.

       Time:      8:30 - 10:00 Pacific Daylight Time
       Phone #:  (916) 356-9200
       Res #:    10103413
       Passcode: 3665174

  I will follow up with a short agenda tommorrow.

               Regards,
               Stephen


From owner-ibis  Thu Oct 10 13:06:57 1996
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From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9610101956.AA01862@rockie.nsc.com>
To: ibis@vhdl.org
Subject: FREE IBIS info from National Semiconductor
Cc: huq@rockie.nsc.com, cjfgsc@tevm2.nsc.com

IBIS fans:

You can get FREE helpful IBIS related information from the
1996: National Interface Databook. 

Chapter13(Modeling Support)is entirely dedicated to IBIS modeling
and related subject matter.

For a FREE copy, visit the Website at http://www.national.com and
click on 'Design Engineers' then click on 'Free Interface Databook'.

Regards,
Syed
Vice-Chair ANSI/EIA-656(IBIS)
National Semiconductor Corp.

From owner-ibis  Thu Oct 10 14:56:01 1996
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Date: Thu, 10 Oct 96 13:38:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Thu, 10 Oct 96 14:36:18 PDT_19@ccm.fm.intel.com>
To: ibis@vhdl.org
cc: huq@rockie.nsc.com
Subject: Re: FREE IBIS info from National Semiconductor


Text item: 

Would it be possible, or make sense to have this on-line, and have a link to it 
from the IEEE Web page?

Arpad

===============================================================================


IBIS fans:

You can get FREE helpful IBIS related information from the
1996: National Interface Databook.

Chapter13(Modeling Support)is entirely dedicated to IBIS modeling
and related subject matter.

For a FREE copy, visit the Website at http://www.national.com and
click on 'Design Engineers' then click on 'Free Interface Databook'.

Regards,
Syed
Vice-Chair ANSI/EIA-656(IBIS)
National Semiconductor Corp.

Text item: External Message Header

The following mail header is for administrative use
and may be ignored unless there are problems.

***IF THERE ARE PROBLEMS SAVE THESE HEADERS***.

Cc: huq@rockie.nsc.com, cjfgsc@tevm2.nsc.com
Subject: FREE IBIS info from National Semiconductor
To: ibis@vhdl.org
Message-Id: <9610101956.AA01862@rockie.nsc.com>
From: huq@rockie.nsc.com (Syed Huq)
Date: Thu, 10 Oct 96 12:56:31 PDT
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Return-Path: owner-ibis@vhdl.vhdl.org

From owner-ibis  Thu Oct 10 15:27:32 1996
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Date: Thu, 10 Oct 96 15:17:22 PDT
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9610102217.AA06876@rockie.nsc.com>
To: ibis@vhdl.org, Arpad_Muranyi@ccm.fm.intel.com
Subject: Re: FREE IBIS info from National Semiconductor
Cc: huq@rockie.nsc.com

Hi,

This offer is only valid for a limited amount of time('til we run out!)
so we cannot really establish a link ...

Regards,
Syed.

> From owner-ibis@vhdl.vhdl.org Thu Oct 10 14:53:41 1996
> Date: Thu, 10 Oct 96 13:38:00 PDT
> From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
> To: ibis@vhdl.org
> Cc: huq@rockie.nsc.com
> Subject: Re: FREE IBIS info from National Semiconductor
> Content-Length: 2066
> 
> 
> Text item: 
> 
> Would it be possible, or make sense to have this on-line, and have a link to it 
> from the IEEE Web page?
> 
> Arpad
> 
> ===============================================================================
> 
> 
> IBIS fans:
> 
> You can get FREE helpful IBIS related information from the
> 1996: National Interface Databook.
> 
> Chapter13(Modeling Support)is entirely dedicated to IBIS modeling
> and related subject matter.
> 
> For a FREE copy, visit the Website at http://www.national.com and
> click on 'Design Engineers' then click on 'Free Interface Databook'.
> 
> Regards,
> Syed
> Vice-Chair ANSI/EIA-656(IBIS)
> National Semiconductor Corp.
> 
> Text item: External Message Header
> 
> The following mail header is for administrative use
> and may be ignored unless there are problems.
> 
> ***IF THERE ARE PROBLEMS SAVE THESE HEADERS***.
> 
> Cc: huq@rockie.nsc.com, cjfgsc@tevm2.nsc.com
> Subject: FREE IBIS info from National Semiconductor
> To: ibis@vhdl.org
> Message-Id: <9610101956.AA01862@rockie.nsc.com>
> From: huq@rockie.nsc.com (Syed Huq)
> Date: Thu, 10 Oct 96 12:56:31 PDT
> Received: from kural by rockie.nsc.com (4.1/SMI-4.1)
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> 

From owner-ibis  Fri Oct 11 11:17:38 1996
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Message-Id: <m0vBlvv-000GjSC@icx.com>
Date: Fri, 11 Oct 96 11:03 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS BIRD39 - SPECIFICATION ENHANCEMENT
Cc: john_m_keifer@ccm.fm.intel.com

To IBIS Committee:

BIRD39 is put forth as the Specification Committee recommendation.  BIRD39
supercedes BIRD38 by John Fitzpatrick on overshoot and dynamic overshoot,
some proposals by Ahmed Omer on dynamic noise immunity, and a proposal in
Egg12 by Bob Ross on min and max thresholds.

Comments are welcome.  

Bob Ross
Interconnectix, Inc.

******************************************************************************
******************************************************************************

BIRD ID#:      39
ISSUE TITLE:   SPECIFICATION ENHANCEMENT
REQUESTER:     John Fitzpatrick, Alcatel CIT
               Ahmed Omer, Motorola, Inc.
               Jon Powell, Quad Design
               Bob Ross, Interconnectix, Inc.
DATE SUBMITTED:                       10/11/96
DATE ACCEPTED BY IBIS OPEN FORUM:     Pending

******************************************************************************
******************************************************************************

STATEMENT OF THE ISSUE:

Additional optional specification parameters are needed for completeness and
useful extensions.

******************************************************************************

STATEMENT OF THE RESOLVED SPECIFICATIONS:

The optional [Model Spec] keyword is proposed to be associated with
a model.  Its purpose is to provide an extendable format to deal with
new specification.  Several parameters are contained in the proposal.

|==============================================================================
|    Keywords:  [Model Spec]
|    Required:  No
|  Sub-params:  Vinh, Vinl, Vinh+, Vinh-, Vinl+, Vinl-, Overshoot_high,
|               Overshoot_low, D_overshoot_high, D_overshoot_low,
|               D_overshoot_time, Pulse_high, Pulse_low, Pulse_time
|
|Description:   The [Model Spec] keyword defines four columns under which
|               specification subparameters are defined.  
|               
|               The following subparamters are defined:
|               Vinh               Input voltage threshold high
|               Vinl               Input voltage threshold low
|               Vinh+              Hysteresis threshold high max Vt+
|               Vinh-              Hysteresis threshold high min Vt+
|               Vinl+              Hysteresis threshold low max Vt-
|               Vinl-              Hysteresis threshold low min Vt-
|               Overshoot_high     Static overshoot high voltage
|               Overshoot_low      Static overshoot low voltage
|               D_overshoot_high   Dynamic overshoot high voltage
|               D_overshoot_low    Dynamic overshoot low voltage
|               D_overshoot_time   Dynamic overshoot time
|               Pulse_high         Pulse immunity high voltage
|               Pulse_low          Pulse immunity low voltage
|               Pulse_time         Pulse immunity time
|
| Usage Rules:  [Model Spec] must follow all other subparameters under the 
|               [Model] keyword.
|
|               For each subparameter contained in the first column, the 
|               remaining three hold its typical, minimum and maximum values.
|               The entries of typical, minimum and maximum be must be placed 
|               on a single line and must be separated by at least one white
|               space or tab or tab character.  All four columns are required
|               under the [Model Spec] keyword.  However, data is required
|               only in the typical column.  If minimum and/or maximum values
|               are not available, the reserved word "NA" must be used
|               indicating the typical value by default.
|
|               The minimum and maximum values are used for specifications
|               subparameter values that may track the min and max operation
|               conditions of the [Model].  Usually it is related to the
|               Voltage range settings.
|
|               Unless noted below, each subparameter does not require having
|               any other subparameter.
|      
|               Vinh, Vinl rules: 
|               The threshold subparameter lines
|               provide additional min and max column values, if needed.
|               The typ column values are still required and would be
|               expected to override the Vinh and Vinl subparameter values
|               specified elsewhere.  Note: the syntax rule that require
|               inserting Vinh and Vinl under models remains unchanged
|               even if the values are defined under the [Model Spec]
|               keyword.
|
|               To mimic a hysteresis effect, the values of Vinh and Vinl may
|               interchanged such that the Vinl value is larger than the Vinh
|               value.  However, simulators may process this information
|               differently or report an error.
|
|               Vinh+, Vinh-, Vinl+, Vinl- rules:
|               The four hysteresis subparmeters must all be defined before
|               the hysteresis threshold rules become effective.  Otherwise
|               the standard threshold subparameters remain in effect.  The
|               hysteresis thresholds shall be at the Vinh+ and Vinh- values
|               for a low-to-high transition, and at the Vinl+ and Vinl-
|               values for a high-to-low transition.
|
|               Overshoot_high, Overshoot_low rules:
|               The static overshoot sub-parameters provide the voltage values
|               for which the component is no longer guaranteed to function
|               correctly.
|
|               D_overshoot_high, D_overshoot_low, D_overshoot_time rules:
|               The dynamic overshoot values provide a time window during
|               which the the overshoot may exceed the static overshoot limits
|               but be below the dynamic overshoot limits.  D_overshoot_time is
|               required for dynamic overshoot testing.  In addition, if
|               D_overshoot_high is specified, then Overshoot_high is necessary
|               for testing beyond the static limit.  Similarly, if
|               D_overshoot_low is specified, then Overshoot_low is necessary
|               for testing beyond the static limit.
|                
|               Pulse_high, Pulse_low, Pulse_time rules:
|               The pulse immunity values provide a time window during which
|               a rising pulse may exceed the nearest threshold value but
|               be below the pulse voltage value and still not cause the
|               input to switch.  Pulse_time is required for pulse immunity
|               testing.  A rising response is tested only if Pulse_high is
|               specified.  Similarly, a falling response is tested only if
|               Pulse_low is specified.  The rising response may exceed the
|               Vinl value, but remain below the Pulse_high value.  Similarily,
|               the falling response drop below the Vinh value, but remain
|               above the Pulse_low value.  In either case the input is
|               regarded as immune to switching if the the responses are 
|               within these extended windows.  If the hysteresis thresholds
|               are defined, then the rising response shall use Vinh- as the
|               reference voltage, and the falling response shall use Vinl+
|               as the reference voltage.
|
|------------------------------------------------------------------------------
[Model Spec]
|   Subparameter          typ        min        max
|
| Thresholds
|
Vinh                      3.5        3.15       3.85    | 70% of Vcc
Vinl                      1.5        1.35       1.65    | 30% of Vcc
|
| Vinh                    3.835       3.335     4.335   | Offset from Vcc
| Vinl                    3.525       3.025     4.025   | for PECL
|
| Hysteresis
|
Vinh+                     2.0        NA         NA      | Overrides the
Vinh-                     1.6        NA         NA      | thresholds
Vinl+                     1.1        NA         NA 
Vinl-                     0.6        NA         NA      | All 4 are required
|
| Overshoot
|
Overshoot_high            5.5        5.0        6.0     | Static overshoot
Overshoot_low            -0.5        NA         NA
D_overshoot_high          6.0        5.5        6.5     | Dynamic overshoot
D_overshoot_low          -1.0       -1.0       -1.0     | requires
                                                        | D_overshoot_time 
D_overshoot_time          20n        20n        20n     | & static overshoot
|
| Pulse Immunity
|
Pulse_high                3V         NA         NA      | Pulse immunity
Pulse_low                 0          NA         NA      | requires
Pulse_time                3n         NA         NA      | Pulse_time
|
|==============================================================================


******************************************************************************

ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

BIRD39 is introduced to assist the model provider, model user and EDA tool
provider.

The model provider provides better models:

  - Improve specification threshold details for CMOS and other technologies
  - Allow hysteresis inputs to be modeled

The model user can do better analysis:

  - Work with dynamic overshoot, a parameter not usually specified in
    datasheets
  - Work with pulse immunity

The EDA tool provider has some clearly defined parameters for more expedient
tool development:

  - Provide an easy to parse structure
  - Provide an evolution path for future extensions

Providing a consistent extension format appears valuable, even if some
parameters do not fit exactly.  It may overspecify most parameters.

The min/typ/max format was chosen over explicit definitions such as:

  Vinh_min = <min_column_value>
  Vinl_max = <max_column_value>

Each additional subparameter would then require 3 names.

Vinl and Vinh for typical values are redundant.  The [Model Spec] 
subparameters are chosen to override the regular [Model] Subparameter because
it is presumed that specification subparameter was purposefully chosen an
may give more detail.  The [Model] Vinh and Vinl remain required to
support processing of files in simulators which support portions, but not
all of Version 3.X.

The following diagram shows how the hysteresis subparameters are defined:

         ^
     O   |              +-------+----<----+--------+------------
     U   |              !       !         !        !
     T   |              !       !         !        !
     P   |              !       !         !        !
     U   |              !       !         !        !
     T   |              !       !         !        !
         |              v       v         ^        ^
     V   |              !       !         !        !
     O   |              !       !         !        !
     L   |              !       !         !        !
     T   |              !       !         !        !
     T   |              !       !         !        !
     A   |              !       !         !        !
     G   |              !       !         !        !
     E   |   -----------+-------+---->----+--------+
         |_____________________________________________________________> 
                     Vinl-   Vinl+     Vinh-     Vinh+
                           INPUT VOLTAGE


Rather than getting into a complicated set of mixed rules, all four
hysteresis subparameters were chosen to be required for hysteresis checking
to take effect.

The Overshoot_high and Overshoot_low values are the same subparameters as
in RAIL.  These are static.

The dynamic overshoot, as introduced by BIRD38 can be represented by 
tables.  However, such information is readily available for more than
a handful of parts.  Therefore a simpler representation was chosen.  This
would work with the PCI specification.  There are defined test setups for
dynamic overshoot - often a large voltage such as 5 V above the rail into
50 ohms connected to an input.  Since the input typically has clamping, the
actual overshoot value may depend on the clamp I/V characteristics.  Thus
the specification limits in the table may be voltages that arise with the
clamp in place.  The dynamic overshoot is a maximum voltage over which
voltage may exceed the static overshoot limit for a maximum period of time.
Thus no dynamic overshoot is specified unless time is specified and the 
two high limits (Overshoot_high and D_overshoot_high) or the two low limits
(Overshoot_low and D_overshoot_low) are both in each case specified.  Otherwise,
no dynamic overshoot testing is done.  It is too complicated to create
a set of default scenerios.

After long discussion, by the specification subcommittee, the pulse immunity
specification was defined similar to the dynamic overshoot.  The data appears 
mostly available from typical curves given as general information.  The pulse
immunity parameters can be estimated from the typical values.  In fact, the
designer has great latitude to enter a set of pulse and amplitude values
according to how much immunity is to be tolerated.  The reference thresholds
from which immunity is calculated is chosen to be the limit input thresholds.

Both the dynamic overshoot and pulse immunity data are not true specification
limits.  The data may appear as a pulse amplitude versus pulse duration
graph for a typical device.  Therefore the user may be the primary source
of this data based on how conservative the user chooses.  Because the data
is not in the format of a true specification, it does not seem reasonable
to provide a format for tabular data where there is no reliable source of
such data.  The pulse immunity data appears to be based on a typical threshold
device.
			     
******************************************************************************

ANY OTHER BACKGROUND INFORMATION:

This proposal replaces BIRD38 and expands the Specification areas regarding
Overshoot.  It also replaces Egg12 regarding typical, minimum, maximum 
format options for threshold specifications.

The Specification committee consisted of Ahmed Omer, John Fitzpatrick, Jon
Powell, and Bob Ross.

******************************************************************************




From owner-ibis  Fri Oct 11 11:24:32 1996
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	id <m0vBm5o-001sAFC@icx.com>; Fri, 11 Oct 96 11:13 PDT
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Message-Id: <m0vBm7t-000GjSC@icx.com>
Date: Fri, 11 Oct 96 11:16 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS AGENDA 10/18/96

                       IBIS Open Forum Meeting Agenda 
                                for 10/18/96
 
                  Bridge Number    Reservation #   Passcode

** Revised Reservation/Passcode **

                  (916) 356-9200   2-104707        6396839

 All meetings are 8:00 AM to 9:55 AM Pacific Time.  When you call into the 
 meeting, ask for the IBIS Open Forum hosted by Will Hobbs and give the
 Reservation Number and Passcode.
 

 8:00 Check-In, Intros, Announcements                         Ross

      - Intros of New IBIS Participants, Meeting Quorum       Ross
      - Membership Update and Treasurers Report               Rusher
      - Review of Previous Meeting's Minutes (and ARs)        Ross
      - Miscellany/Announcements                              All
      - Press & Web Page Updates                              Huq, All
      - New Models Available, Library Update                  Powell, All
      - Opens for New Issues                                  All

 8:25 Administrative and Project Discussions

      Design SuperCon97 IBIS Meeting                          Huq

      s2ibis2 Plans                                           Ross

      DAC97 IBIS Meeting Planning                             Rusher

      IEC Progress                                            Rusher

      New Administrative Issues                               All

 8:50 Technical Discussion

      BIRD37.2 - ENHANCEMENT TO THE PACKAGE MODEL SPEC.       Peters
                 (Vote)

      PACKAGE COMMITTEE REPORT                                Peters

      SPECIFICATION COMMITTEE REPORT                          Powell, All
      BIRD39 - SPECIFICATION ENHANCEMENT
      BIRD38 - MAXIMUM VOLTAGE
            
      BIRD35.2 - MULTI-STAGED OUTPUTS                         Ross
 
      PARSER ENHANCEMENT PROPOSAL                             Rokusek        

      New Technical Issues                                    All

 9:50 Wrap Up and Next Meetings Plans                         Ross

 9:55 Sign Off
 





From owner-ibis  Mon Oct 14 02:36:21 1996
Received: from via.com.tw ([203.70.217.13]) by vhdl.vhdl.org (8.7.3/8.7.3) with SMTP id CAA21190 for <ibis@vhdl.org>; Mon, 14 Oct 1996 02:36:13 -0700 (PDT)
Received: from sun13.via.com.tw ([203.70.217.82]) by via.com.tw (4.1/SMI-4.1)
	id AA20932; Mon, 14 Oct 96 17:25:35 CST
Message-Id: <326205ED.2B28@via.com.tw>
Date: Mon, 14 Oct 1996 17:20:45 +0800
From: Huang <arthur@via.com.tw>
Organization: VIA
X-Mailer: Mozilla 3.0Gold (Win95; I)
Mime-Version: 1.0
To: IBIS committee <ibis@vhdl.org>
Subject: s2ibis2 question?
Content-Type: multipart/mixed; boundary="------------3C329507C80"

This is a multi-part message in MIME format.

--------------3C329507C80
Content-Type: text/plain; charset=big5
Content-Transfer-Encoding: 7bit

Hello,

  I am a new learner for IBIS models version 2.1 and is using s2ibis2.
Now I am facing a problem: while I characterize for a simple 3-state I/O
pad (refer to attachment), the generated .spi file will not function
correctly.  After examining the .spi file, I found the TN pin will NOT
be set while characterizing for the A pin (and vice versa).  So I need
to correct this error by hand.  Is there any way to make this process
more automatically?  Or I make a wrong .s2i file?

  Besides, if I just want the bd4t model for IO pin, could I just not
create for the other 2 models for A and TN?

  Any help or comments will be appreciated.

best regards,
Arthur Huang

ps. my s2ibis2 is s2ibis2.sparc, version no. v0.91BETA

[attachment]
(first is bd4t.s2i, and second is bd4t)

--------------3C329507C80
Content-Type: text/plain; charset=big5; name="bd4t.s2i"
Content-Transfer-Encoding: 7bit
Content-Disposition: inline; filename="bd4t.s2i"

| TEST IBIS characterization
[IBIS Ver]	2.1
[File rev]	1.0
[Date]	Mon Oct 14 15:56:30 1996
[Disclaimer]	for characterization purpose only
[Spice type]	hspice
| [Iterate]
| [Cleanup]
[Component]	bd4t
[Manufacturer]	Arthur
| [Package model]	pkg_type
[Spice file]	bd4t
[Temperature range]	50	100	0
[Voltage range]		3.3	3.0	3.6
[R_pkg]			1.0m	0.5m	1.5m
[L_pkg]			2.5nH	2.0nH	3.0nH
[C_pkg]			4.0pF	3.5pF	4.5pF
| [Diff pin]
| describe the differential pin list

| [Pin mapping]
| currently just neglect this command

[Pin]
A	A	s_A	A
TN	TN	s_TN	TN
IO	IO	s_IO	bd4t
-> A TN
VDD	vdd	s_p	POWER
pGND	g	GND	GND

[Model]	A
[Model type]	Input
[Polarity]	Non-Inverting
[Vinl]	0
[Vinh]	5.0

[Model]	TN
[Model type]	Input
[Polarity]	Non-Inverting
[Vinl]	0
[Vinh]	5.0

[Model]	bd4t
[Model type]	I/O
[Polarity]	Non-Inverting


--------------3C329507C80
Content-Type: text/plain; charset=big5; name="bd4t"
Content-Transfer-Encoding: 7bit
Content-Disposition: inline; filename="bd4t"

* testing spice deck for bd4t IBIS 2.1 model characterization

* change the following line to your library file
.inc "bd4t.lib"
.global vdd gnd vpp

xCKT A IO ZI TN bd4t

.subckt bd4t a io zi tn
xnd1 a tn n1 nand
xnd2 n1 tn n2 nand
xiv1 n2 n3 inv
mpio io n1 vdd vdd p w=60u l=1u m=1
mnio io n3 gnd gnd n w=30u l=1u m=1
xiv2 n4 zi inv
xiv3 io n4 inv
.ends bd4t

.subckt nand a b z
mpa z a vdd vdd p w=6u l=1u m=1
mpb z b vdd vdd p w=6u l=1u m=1
mna z a mid gnd n w=3u l=1u m=1
mnb mid b gnd gnd n w=3u l=1u m=1
.ends nand

.subckt inv a z
mp z a vdd vdd p w=6u l=1u m=1
mn z a gnd gnd n w=3u l=1u m=1
.ends inv


--------------3C329507C80--



From owner-ibis  Mon Oct 14 03:33:24 1996
Received: from via.com.tw ([203.70.217.13]) by vhdl.vhdl.org (8.7.3/8.7.3) with SMTP id DAA21607 for <ibis@vhdl.org>; Mon, 14 Oct 1996 03:33:19 -0700 (PDT)
Received: from sun13.via.com.tw ([203.70.217.82]) by via.com.tw (4.1/SMI-4.1)
	id AA21342; Mon, 14 Oct 96 18:22:37 CST
Message-Id: <3262141E.4775@via.com.tw>
Date: Mon, 14 Oct 1996 18:21:18 +0800
From: Huang <arthur@via.com.tw>
Organization: VIA
X-Mailer: Mozilla 3.0Gold (Win95; I)
Mime-Version: 1.0
To: IBIS committee <ibis@vhdl.org>
Subject: s2ibis2 question?
Content-Type: multipart/mixed; boundary="------------20223C7622E"

This is a multi-part message in MIME format.

--------------20223C7622E
Content-Type: text/plain; charset=big5
Content-Transfer-Encoding: 7bit

Hello,

  I am a new learner for IBIS models version 2.1 and is using s2ibis2.
Now I am facing a problem: while I characterize for a simple 3-state I/O
pad (refer to attachment), the generated .spi file will not function
correctly.  After examining the .spi file, I found the TN pin will NOT
be set while characterizing for the A pin (and vice versa).  So I need
to correct this error by hand.  Is there any way to make this process
more automatically?  Or, do I make a wrong .s2i file?

  Any help or comments will be appreciated.

best regards,
Arthur Huang

ps. my s2ibis2 is s2ibis2.sparc, version no. v0.91BETA

[Attachment]
(first is bd4t.s2i, second is bd4t)

--------------20223C7622E
Content-Type: text/plain; charset=big5; name="bd4t.s2i"
Content-Transfer-Encoding: 7bit
Content-Disposition: inline; filename="bd4t.s2i"

| TEST IBIS characterization
[IBIS Ver]	2.1
[File rev]	1.0
[Date]	Mon Oct 14 15:56:30 1996
[Disclaimer]	for characterization purpose only
[Spice type]	hspice
| [Iterate]
| [Cleanup]
[Component]	bd4t
[Manufacturer]	Arthur
| [Package model]	pkg_type
[Spice file]	bd4t
[Temperature range]	50	100	0
[Voltage range]		3.3	3.0	3.6
[R_pkg]			1.0m	0.5m	1.5m
[L_pkg]			2.5nH	2.0nH	3.0nH
[C_pkg]			4.0pF	3.5pF	4.5pF
| [Diff pin]
| describe the differential pin list

| [Pin mapping]
| currently just neglect this command

[Pin]
A	A	s_A	A
TN	TN	s_TN	TN
IO	IO	s_IO	bd4t
-> A TN
VDD	vdd	s_p	POWER
pGND	g	GND	GND

[Model]	A
[Model type]	Input
[Polarity]	Non-Inverting
[Vinl]	0
[Vinh]	5.0

[Model]	TN
[Model type]	Input
[Polarity]	Non-Inverting
[Vinl]	0
[Vinh]	5.0

[Model]	bd4t
[Model type]	I/O
[Polarity]	Non-Inverting


--------------20223C7622E
Content-Type: text/plain; charset=big5; name="bd4t"
Content-Transfer-Encoding: 7bit
Content-Disposition: inline; filename="bd4t"

* testing spice deck for bd4t IBIS 2.1 model characterization

* change the following line to your library file
.inc "bd4t.lib"
.global vdd gnd vpp

xCKT A IO ZI TN bd4t

.subckt bd4t a io zi tn
xnd1 a tn n1 nand
xnd2 n1 tn n2 nand
xiv1 n2 n3 inv
mpio io n1 vdd vdd p w=60u l=1u m=1
mnio io n3 gnd gnd n w=30u l=1u m=1
xiv2 n4 zi inv
xiv3 io n4 inv
.ends bd4t

.subckt nand a b z
mpa z a vdd vdd p w=6u l=1u m=1
mpb z b vdd vdd p w=6u l=1u m=1
mna z a mid gnd n w=3u l=1u m=1
mnb mid b gnd gnd n w=3u l=1u m=1
.ends nand

.subckt inv a z
mp z a vdd vdd p w=6u l=1u m=1
mn z a gnd gnd n w=3u l=1u m=1
.ends inv


--------------20223C7622E--



From owner-ibis  Tue Oct 15 06:23:27 1996
Received: from bull.com (root@bull.com [128.35.253.3]) by vhdl.vhdl.org (8.7.3/8.7.3) with SMTP id GAA09562 for <ibis@vhdl.org>; Tue, 15 Oct 1996 06:23:26 -0700 (PDT)
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Date: Tue, 15 Oct 96 09:12:07 EDT
From: herb@hws1.ma30.zds.com (Herb Kaupp)
Message-Id: <9610151312.AA08020@hws1.ma30.zds.com>
To: ibis@vhdl.org
Subject: Address Change

please change address from herb@hws1.ma30.bull.com

to herb@hws1.ma30.zds.com

************************************
*  Herb Kaupp                      *
*  MA30/822A                       *
*  Zenith Data Systems             *
*  300 Concord Road                *
*  Billerica, Mass 01821-4186      *
*  Phone/fax 508 294-2340/3054     *
*  e-mail: herb@hws1.ma30.zds.com  *
************************************



From owner-ibis  Tue Oct 15 08:35:56 1996
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	id AA27550; Tue, 15 Oct 96 11:24:21 EDT
Date: Tue, 15 Oct 96 11:24:21 EDT
From: hoang@msai.mea.com (Hoang Nguyen)
Message-Id: <9610151524.AA27550@sbedrock.msai.mea.com>
To: ibis@vhdl.org
Subject: Re: s2ibis2 question?

Dear IBIS gurus:

I'd like to share a similar experience working with s2ibis program,
which Arthur has posted earlier.

1. For 3-state I/O buffer, the enable pin (in the pin list) needs to be
   connected to a resistor and tie to VDD or GND, depending if you have
   active-high or active-low buffer.  s2ibis program does not do this
   automatically.  In addition, declaring [Enable] Active-High or 
   Active-Low in .s2i file does not guarantee that pullup/pulldown 
   output disable simulation results are correct, unless the proper path
   is provided to VDD or GND by the users as mentioned above.

2. This is a related question to the above.
   When s2ibis generates Power clamp table and Pullup table for 3-state I/O,
   s2ibis sweeps a voltage range VDD->2*VDD for Power Clamp simulation.
   I think the program does this according to IBIS Spec:
   
   Curve		Low Voltage		High Voltage
   -----		-----------		------------
   [POWER Clamp]	POWER			POWER + POWER

   But when n-channel is used as pullup device, we only get insignificant
   current flow because the voltage range is not in the active region of the
   device.  Has anyone have similar experience?

   To generate pullup table, only diode data [power clamp] in the active 
   region [in the voltage range where the diode is active] is subtracted 
   from from pullup data to generate pullup table.  So then is it OK to sweep
   -VDD->VDD for n-channel pullup device in Power clamp simulation? because
   in this region the diode is active.  It's contrary to IBIS Spec outlined
   above. Please advise.

Best regards,

Hoang Nguyen
Mitsubishi Semiconductor

From owner-ibis  Wed Oct 16 04:59:39 1996
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Date: Wed, 16 Oct 96 13:49:25 +0100
From: cornelia@thesys.de (Cornelia Foss)
Message-Id: <9610161249.AA12761@s01.thesys.de>
To: ibis@vhdl.org
Subject: s2ibis2 problem

To IBIS engineers,

First of all thanks a lot for answering my first email.

I came across an other problem concerning s2ibis2.

According to the IBIS spec. the C_comp sub-parameter
influences t-rise and t-fall, but actually within
the simulations I run changeing of C_comp did not affect
t-rise or t-fall.
There is no C_comp added to the relevant .spi files by s2ibis2.

Is this a known problem, did I make a mistake or was the spec
canged, perhaps?

Much thanks in advance for possible reply.

Kindest regards

Sascha Pawel


From owner-ibis  Wed Oct 16 07:11:17 1996
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Message-Id: <3264E7FF.153B@via.com.tw>
Date: Wed, 16 Oct 1996 21:49:51 +0800
From: Huang <arthur@via.com.tw>
Organization: VIA
X-Mailer: Mozilla 3.0Gold (Win95; I)
Mime-Version: 1.0
To: IBIS committee <ibis@vhdl.org>
Subject: [Fwd: s2ibis2 question?]
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Hi,

  Thank Mark and I have the following solution for my previous question
for s2ibis2.  I just post here for future reference.

Arthur


SIMPSON_MARK@Tandem.COM wrote:
> 
> Arthur,
> 
>       You have a little of both going on.  There is a way to the
> process more automatic AND the s2i file is incomplete.  You need to
> add termination to the TN and A nodes in the .sp file since s2ibis2
> does not always terminate them to a voltage source (avoid no dc path
> to ground and ensure the TN node is in it's proper state to generate
> the pullup/down).  The s2i file needs the [Model File] statement to
> know which process corner to use.  I copied your files, modified them
> and created .ibs files using s2ibis2.sparc and hspice.  See the
> attached modified .s2i, .sp and lib files.
> 
> Good luck
> 
> Mark Simpson
> 
> ------------   TEXT ATTACHMENT   --------
> SENT 10-14-96 FROM SIMPSON_MARK @ESP
> 
> ::::::::::::::
> bd4t.s2i
> ::::::::::::::
> | TEST IBIS characterization
> [IBIS Ver]      2.1
> [File rev]      1.0
> [Date]  Mon Oct 14 15:56:30 1996
> [Disclaimer]    for characterization purpose only
> [Spice type]    hspice
> | [Iterate]
> | [Cleanup]
> [Component]     bd4t
> [Manufacturer]  Arthur
> | [Package model]       pkg_type
> [Spice file]    bd4t.sp
> [Temperature range]     50      100     0
> [Voltage range]         3.3     3.0     3.6
> [R_pkg]                 1.0m    0.5m    1.5m
> [L_pkg]                 2.5nH   2.0nH   3.0nH
> [C_pkg]                 4.0pF   3.5pF   4.5pF
> | [Diff pin]
> | describe the differential pin list
> 
> | [Pin mapping]
> | currently just neglect this command
> 
> [Pin]
> A       A       s_A     A
> TN      TN      s_TN    TN
> IO      IO      s_IO    bd4t
> -> A TN
> VDD     vdd     s_p     POWER
> pGND    g       GND     GND
> 
> [Model] A
> [Model type]    Input
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [Vinl]  0
> [Vinh]  3.3
> 
> [Model] TN
> [Model type]    Input
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [Vinl]  0
> [Vinh]  3.3
> 
> [Model] bd4t
> [Model type]    I/O
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [sim time]      10n
> [C_comp]        2.0pF   3.0pF   1.0pF
> [Rising waveform] 50 0 NA NA NA NA NA NA NA
> [Falling waveform] 50 3.3 NA NA NA NA NA NA NA
> [Vmeas]         1.5V
> [Cref]          10pf
> [Vref]          0V
> 
> ::::::::::::::
> bd4t.sp
> ::::::::::::::
> * input termination  (TN low if active high, TN high if active low)
> *RTN    TN      VDD     1E9
> RTN     TN      0       1E9
> RA      A       0       1E9
> 
> * testing spice deck for bd4t IBIS 2.1 model characterization
> 
> * change the following line to your library file
> *.inc 'junk.lib'
> .global vdd gnd vpp
> 
> xCKT A IO ZI TN bd4t
> 
> .subckt bd4t a io zi tn
> xnd1 a tn n1 nand
> xnd2 n1 tn n2 nand
> xiv1 n2 n3 inv
> mpio io n1 vdd vdd p w=60u l=1u m=1
> mnio io n3 gnd gnd n w=30u l=1u m=1
> xiv2 n4 zi inv
> xiv3 io n4 inv
> .ends bd4t
> 
> .subckt nand a b z
> mpa z a vdd vdd p w=6u l=1u m=1
> mpb z b vdd vdd p w=6u l=1u m=1
> mna z a mid gnd n w=3u l=1u m=1
> mnb mid b gnd gnd n w=3u l=1u m=1
> .ends nand
> 
> .subckt inv a z
> mp z a vdd vdd p w=6u l=1u m=1
> mn z a gnd gnd n w=3u l=1u m=1
> .ends inv
> 
> ::::::::::::::
> proc.max
> ::::::::::::::
> .lib './junk.lib' BEST
> ::::::::::::::
> proc.min
> ::::::::::::::
> .lib './junk.lib' WORST
> ::::::::::::::
> proc.typ
> ::::::::::::::
> .lib './junk.lib' TYPICAL

From owner-ibis  Wed Oct 16 08:38:06 1996
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	id AA16234; Wed, 16 Oct 96 21:49:53 CST
Message-Id: <3264E7FF.153B@via.com.tw>
Date: Wed, 16 Oct 1996 21:49:51 +0800
From: Huang <arthur@via.com.tw>
Organization: VIA
X-Mailer: Mozilla 3.0Gold (Win95; I)
Mime-Version: 1.0
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Hi,

  Thank Mark and I have the following solution for my previous question
for s2ibis2.  I just post here for future reference.

Arthur


SIMPSON_MARK@Tandem.COM wrote:
> 
> Arthur,
> 
>       You have a little of both going on.  There is a way to the
> process more automatic AND the s2i file is incomplete.  You need to
> add termination to the TN and A nodes in the .sp file since s2ibis2
> does not always terminate them to a voltage source (avoid no dc path
> to ground and ensure the TN node is in it's proper state to generate
> the pullup/down).  The s2i file needs the [Model File] statement to
> know which process corner to use.  I copied your files, modified them
> and created .ibs files using s2ibis2.sparc and hspice.  See the
> attached modified .s2i, .sp and lib files.
> 
> Good luck
> 
> Mark Simpson
> 
> ------------   TEXT ATTACHMENT   --------
> SENT 10-14-96 FROM SIMPSON_MARK @ESP
> 
> ::::::::::::::
> bd4t.s2i
> ::::::::::::::
> | TEST IBIS characterization
> [IBIS Ver]      2.1
> [File rev]      1.0
> [Date]  Mon Oct 14 15:56:30 1996
> [Disclaimer]    for characterization purpose only
> [Spice type]    hspice
> | [Iterate]
> | [Cleanup]
> [Component]     bd4t
> [Manufacturer]  Arthur
> | [Package model]       pkg_type
> [Spice file]    bd4t.sp
> [Temperature range]     50      100     0
> [Voltage range]         3.3     3.0     3.6
> [R_pkg]                 1.0m    0.5m    1.5m
> [L_pkg]                 2.5nH   2.0nH   3.0nH
> [C_pkg]                 4.0pF   3.5pF   4.5pF
> | [Diff pin]
> | describe the differential pin list
> 
> | [Pin mapping]
> | currently just neglect this command
> 
> [Pin]
> A       A       s_A     A
> TN      TN      s_TN    TN
> IO      IO      s_IO    bd4t
> -> A TN
> VDD     vdd     s_p     POWER
> pGND    g       GND     GND
> 
> [Model] A
> [Model type]    Input
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [Vinl]  0
> [Vinh]  3.3
> 
> [Model] TN
> [Model type]    Input
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [Vinl]  0
> [Vinh]  3.3
> 
> [Model] bd4t
> [Model type]    I/O
> [Polarity]      Non-Inverting
> [Model File]    proc.typ   proc.min   proc.max
> [sim time]      10n
> [C_comp]        2.0pF   3.0pF   1.0pF
> [Rising waveform] 50 0 NA NA NA NA NA NA NA
> [Falling waveform] 50 3.3 NA NA NA NA NA NA NA
> [Vmeas]         1.5V
> [Cref]          10pf
> [Vref]          0V
> 
> ::::::::::::::
> bd4t.sp
> ::::::::::::::
> * input termination  (TN low if active high, TN high if active low)
> *RTN    TN      VDD     1E9
> RTN     TN      0       1E9
> RA      A       0       1E9
> 
> * testing spice deck for bd4t IBIS 2.1 model characterization
> 
> * change the following line to your library file
> *.inc 'junk.lib'
> .global vdd gnd vpp
> 
> xCKT A IO ZI TN bd4t
> 
> .subckt bd4t a io zi tn
> xnd1 a tn n1 nand
> xnd2 n1 tn n2 nand
> xiv1 n2 n3 inv
> mpio io n1 vdd vdd p w=60u l=1u m=1
> mnio io n3 gnd gnd n w=30u l=1u m=1
> xiv2 n4 zi inv
> xiv3 io n4 inv
> .ends bd4t
> 
> .subckt nand a b z
> mpa z a vdd vdd p w=6u l=1u m=1
> mpb z b vdd vdd p w=6u l=1u m=1
> mna z a mid gnd n w=3u l=1u m=1
> mnb mid b gnd gnd n w=3u l=1u m=1
> .ends nand
> 
> .subckt inv a z
> mp z a vdd vdd p w=6u l=1u m=1
> mn z a gnd gnd n w=3u l=1u m=1
> .ends inv
> 
> ::::::::::::::
> proc.max
> ::::::::::::::
> .lib './junk.lib' BEST
> ::::::::::::::
> proc.min
> ::::::::::::::
> .lib './junk.lib' WORST
> ::::::::::::::
> proc.typ
> ::::::::::::::
> .lib './junk.lib' TYPICAL

From owner-ibis  Wed Oct 16 10:44:55 1996
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	id <m0vDZr5-001rzJC@icx.com>; Wed, 16 Oct 96 10:34 PDT
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Date: Wed, 16 Oct 96 10:36 PDT
From: bob@icx.com ( Bob Ross)
To: cornelia@thesys.de, ibis@vhdl.org
Subject: Re:  s2ibis2 problem

Sascha:

C_comp is an effective capacitance intended to model the
non-linear capacitances already contained in the Spice file.
Therefore C_comp is not added to the .spi decks, but its
real effect already exists in the Spice deck as part of
the Spice device model.  So s2ibis2 is correct in this
respect.

Best Regards,
Bob Ross
Interconnectix, Inc.


> Date: Wed, 16 Oct 96 13:49:25 +0100
> From: cornelia@thesys.de (Cornelia Foss)
> Message-Id: <9610161249.AA12761@s01.thesys.de>
> To: ibis@vhdl.org
> Subject: s2ibis2 problem
> Status: RO

> To IBIS engineers,

> First of all thanks a lot for answering my first email.

> I came across an other problem concerning s2ibis2.

> According to the IBIS spec. the C_comp sub-parameter
> influences t-rise and t-fall, but actually within
> the simulations I run changeing of C_comp did not affect
> t-rise or t-fall.
> There is no C_comp added to the relevant .spi files by s2ibis2.

> Is this a known problem, did I make a mistake or was the spec
> canged, perhaps?

> Much thanks in advance for possible reply.

> Kindest regards

> Sascha Pawel




From owner-ibis  Wed Oct 16 16:49:12 1996
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Date: Wed, 16 Oct 96 16:40 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS BIRD35.2 MULTI-STAGED OUTPUTS

To IBIS Committee:

Finally, after a long delay, here is BIRD35.2!

BIRD35.2 is a complete revision of BIRD35.1 to reflect the IBIS Committee's
request for a [Model] based scheduling mechanism.  BIRD35.1 focused on
scheduling a sequence of new [Pullup(n)] and [Pulldown(n) tables.  BIRD35.2
now schedules other [Model]s directly.

The key aspects of BIRD35.2 are:

1.  Each [Model] can contain the [Driver Schedule] keyword to override
    using the [Pullup] and [Pulldown] and transition and use that data form
    the referenced models.  Even though it is overrided, this information
    is still needed, as required for downward compatibility for simulators
    which do not support the multi-staged [Driver Schedule] keyword.

2.  The [Model] keyword subparameters for specifications (Vinl, Vinh,
    Vmeas, Vref, Rref, Cref) and C_comp override any data contained in
    models that are referenced in the [Driver Schedule] table.

3.  Only the [Power Clamp] and [Gnd Clamp] tables under [Model] are
    used.

4.  The [Driver Schedule] consists of 5 columns for defining the referenced
    Model_name, its rising_on, rising_off, falling_on and falling_off
    delays.  All four columns are required.  A value of zero implies
    no delay.  A value of NA implies that no response occurs for that
    part of the transition.  This could occur, for example, if an Open_source
    model is used for an extra bit of source current for a small period
    of time for the rising transition, but has no effect for the falling
    transition.

For background:

The multi-staged switching functionality has been on the priority list for
Version 3.0 addtions.  BIRD35.2 is another proposal to address this issue.

Unlike exiting IBIS keywords, the new tables cannot be measured directly
or even be produced easily by direct decomposition and simulation of Spice 
elements because of too much internal interaction.  The actual construction 
would be by trial and validation and based on the known architectural intent.
 
Bob Ross
Interconnectix, Inc.

******************************************************************************
******************************************************************************

BIRD ID#:      35.2
ISSUE TITLE:   Multi-staged Outputs
REQUESTER:     Bob Ross, Interconnectix, Inc.
DATE SUBMITTED:    5/13/96, 6/21/96, 10/16/96
DATE ACCEPTED BY IBIS OPEN FORUM:     Pending

******************************************************************************
******************************************************************************

STATEMENT OF THE ISSUE:

Modeling output transitions of buffers consisting of several sequentially
switched internal devices has been a long standing request.  The addition
of the [Rising Waveform] and [Falling Waveform] keywords partially addresses
the issue by waveform shaping control.  However, these keywords do not model
the dynamic impedance changes during transitions.  The more direct solution
is to add IBIS keywords which allow modeling the internal architecture more
closely.

******************************************************************************

STATEMENT OF THE RESOLVED SPECIFICATIONS:

The [Driver Schedule] keyword is introduced as a keyword under the [Model]
keyword to construct a multi-staged driver from other existing driver
models.

|==============================================================================
| Keywords:     [Driver Schedule]
| Required:     No
| Description:  Describes the relative model switching sequence for referenced
|               models to produce a multi-staged driver.
|
| Usage Rules:  The [Driver Schedule] table consists of five columns.  The
|               first column is the model names of other models that exist
|               in the .ibs file.  The remaining four columns describe
|               delays: rising_delay_on, rising_delay_off, falling_delay_on
|               and falling_delay_off.  All values are referenced to 0 seconds
|               for the start of the rising transition and 0 seconds for the 
|               start of the falling transition.  All delays must be equal to
|               or greater than 0.
|
|               The Rise_on_dly entry gives the begining of the low-to-high
|               transition.  The Rise_off_dly entry may be given to end the
|               low-to-high transition and intiate a high-to-low transition
|               during the rising cycle.  Similarily, the Fall_on_dly gives
|               the begining of the high-to-low transition.  The Fall_off_dly
|               may be given to end the high-to-low transition and initiate
|               a low-to-high transition.  
|
|               Use 'NA' when no transition is applicable.  For each model,
|               the transition sequence must be complete, i.e, it must start
|               and end at the same state.  
|
|               Only the [Pulldown] and [Pullup] tables and transition data
|               [Ramp] or [Rising Waveform] and [Falling Waveform] data are
|               used from each model that is referenced.  The [Model] keyword
|               provides the specification information, [Gnd Clamp] and [Power
|               Clamp], and C_comp, regardless of information contained in
|               the referenced models.
|
|               No [Driver Schedule] may reference a model which itself has
|               within it a [Driver Schedule] table keyword.
|
| Other Notes:  The added models typically consist of Open_sink (Open_drain)
|               or Open_source models to provide sequentially increased drive
|               strengths.  The added drive may be removed within the same
|               transition for a momentary boost or during the opposite 
|               transition.
|
|               The syntax also allows for reducing the drive strength.
|------------------------------------------------------------------------------
|
[Driver Schedule]
| Model_name     Rise_on_dly  Rise_off_dly  Fall_on_dly  Fall_off_dly
  MODEL_OUT      0.0ns        NA            0.0ns        NA
|
|                                  Examples of added multi-staged transitions
  M_O_SOURCE1     0.5ns        NA            0.5ns        NA
|              low (high-Z) to high        high to low (high-Z)
  M_O_SOURCE2    0.5n         1.5n          NA           NA
|               low to high to low           low (high-Z)
  M_O_DRAIN1     1.0n         NA            1.5n         NA
|              low to high (high-Z)        high (high-Z) to low
  M_O_DRAIN2     NA           NA            1.5n         2.0n
|                  high (high-Z)           high to low to high
|                                  Bus-hold stage
  M_O_DRAIN3     NA           1.0n          NA           0.5n
|              high (high-Z) to low        low to high (high-Z)
|
|==============================================================================


******************************************************************************

ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

The proposal is designed to add to the existing IBIS structures and retain
as much existing meaning as possible.  The new "stage" tables follow all of 
the conventions of the existing non-staged tables.  For that reason, 
even the subparameters R_dut, L_dut, and C_dut are permitted, although 
they are not relevant nor are expected to be used.  

The overall structure is to connect independently controlled stages to a
common output node.  The relative relationhips between waveform controls 
are used to produce phased turn-on and turn-off models.  The structure can
be also be used to model other internal artifacts.  These may include
providing an extra boost pulse or providing bus hold modeling.  

A general objection to these structures is that they do not relate to any
externally obtained extraction.  The intent of these structures is to give
a format for modeling a known architecture with behavioral blocks and 
to also add some detail to existing models.

BIRD35.1 introduces a [Rising Sequence] and [Falling Sequence] tables to
control the sequencing of individual stages.  This is in response to Jon
Powell's comment to make the sequencing of waveforms easier to understand
and modify.  So each [Rising Waveform(n)] and [Falling Waveform(n)] table
has its start time controlled by the Sequence tables.

One technical limitation is that the Sequencing is the same for typ, min,
and max columns.  Any internal shifting within the typ, min, and max columns
for the stage must be taken into account within the Waveform columns for that
stage.

BIRD35.2 removes the numbered [Pullup(n)], [Pulldown(n)], [Rising Waveform(n)]
and [Falling Waveform(n)] syntax.  Instead, references by Model_name is
introduced so that existing [Model] syntax can be used.  

The new keyword [Driver Schedule] provides a syntax for sequencing other
models.  This is given as a keyword under the [Model] keyword.  It overrides
any existing [Pullup], [Pulldown] and [Ramp] or [Rising Waveform] and 
[Falling Waveform] data for that model.  However, the required tables for
[Model] are still required for backwards compatibility reasons for simulators
which do not support multi-staged switching.  This information can be used
as a composite model cross-check, although the resulting model may not
perform in the same manner as the multi-stage model.

Any model that is referenced may itself be a complete model.  This creates
a problem if several complete models are referenced and they contain common
information such as specification data, C_comp, and clamping information.
Some of this information can be conflicting such as timing test loads and
thresholds.  The simplist resolution is to rely only on the information
withing the [Model] keyword itself.  Then it can be found easily.  Also,
there is no confusion whether data in other models is "added".  For
example, would all of the C_comp values be added?

The syntax allows for a reduction rather than an addition in driver
strength by using the "*_off_dly".  This can be used to turn off the
boost with the transition to initiate an out of phase boost.  Not all
simulators may support this feature.  This feature could be used to
model a bus-hold output stage.

The prohibition of [Driver Schedule] table referencing other models which
contain the [Driver Schedule] keyword is added to keep all of the scheduling
within one table for clarity and to avoid the need to test for models 
referencing each other.

******************************************************************************

ANY OTHER BACKGROUND INFORMATION:

Jon Powell provided syntax of an existing implementation.  This proposal
is intended to be compatible with it.

******************************************************************************




From owner-ibis  Thu Oct 17 11:35:30 1996
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From: "Boeckmann, Ed (Edward F)" <efboeckm@ingr.com>
To: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: Spice to IBIS Conversion with newtryme files
Date: Thu, 17 Oct 1996 13:23:00 -0500
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Hello!

Has anyone out there had this problem with the example files for spice
to IBIS conversion:

When running s2ibis2.sparc with the newtryme.sp and newtryme.s2i files I
get two error messages as follows:

"Spice run (TYP) aborted.  See file ddt8.msg for information.  Curve
pulldown (output disabled) not generated."

(the file ddt8.msg has only the cryptic message: "^G>error  ***hspice
aborted*** )

"Error in analysis for pin 8."

There is no message file for the pin 8 error.

Otherwise the run produces a normal looking IBIS file with no indication
of errors. (Deceptively normal looking?).

The command file newtryme.s2i looks a little strange to me in the pin
description area with lines like:

	-> 8   and -> 4

But if I remove what looks like garbage in the file, the run results do
not improve or get worse.

I will appreciate any explanations someone might have.

Thanks,

Ed Boeckmann
Intergraph Corp.
Huntsville, Al 35894
Mail Stop CR1100
tel. (205)-730-6219
fax.(205)-730-6000
email efboeckm@ingr.com

From owner-ibis  Thu Oct 17 12:46:51 1996
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Date: Thu, 17 Oct 96 12:30:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Thu, 17 Oct 96 12:34:36 PDT_2@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re[2]: s2ibis2 question?


Text item: 

Hoang,

Regarding 1) I can't help you, because I am not using that tool.
Regarding 2) my answer is between your lines.

Arpad Muranyi
Intel Corporation
=============================================================================

Dear IBIS gurus:

I'd like to share a similar experience working with s2ibis program,
which Arthur has posted earlier.

1. For 3-state I/O buffer, the enable pin (in the pin list) needs to be
   connected to a resistor and tie to VDD or GND, depending if you have
   active-high or active-low buffer.  s2ibis program does not do this
   automatically.  In addition, declaring [Enable] Active-High or
   Active-Low in .s2i file does not guarantee that pullup/pulldown
   output disable simulation results are correct, unless the proper path
   is provided to VDD or GND by the users as mentioned above.

2. This is a related question to the above.
   When s2ibis generates Power clamp table and Pullup table for 3-state I/O,
   s2ibis sweeps a voltage range VDD->2*VDD for Power Clamp simulation.
   I think the program does this according to IBIS Spec:

   Curve          Low Voltage          High Voltage
   -----          -----------          ------------
   [POWER Clamp]     POWER               POWER + POWER

   But when n-channel is used as pullup device, we only get insignificant
   current flow because the voltage range is not in the active region of the
   device.  Has anyone have similar experience?

This is all correct.  In most cases, N-channel pullups do not have parasitic 
clamps with respect to Vcc, because the substrate is connected to GND.  The data
you see is noise and/or leakage only.

   To generate pullup table, only diode data [power clamp] in the active
   region [in the voltage range where the diode is active] is subtracted
   from from pullup data to generate pullup table.  So then is it OK to sweep
   -VDD->VDD for n-channel pullup device in Power clamp simulation? because
   in this region the diode is active.  It's contrary to IBIS Spec outlined
   above. Please advise.

Your question here is not entirely clear to me, but is seems to me that you are 
asking whether it is OK to subtract the entire Clamp curve from the pullup curve
including the -VDD to 0 V region (where the clamp is active).

To set things straight, when you sweep a 3-stated device from -VDD to 2*VDD, you
get the GND Clamp on one end and the Power Clamp on the other end of the curve. 
The same thing is happening with the pullup and pulldown sweeps.  Each of these 
have GND and Power Clamp data embedded within them in the top and bottom 1/3 of 
the sweep.

To avoid the doubling (or tripling) of the clamps, the entire range of the data 
obtained with the 3-stated sweep needs to be subtracted from the pulldown and 
pullup sweeps.  This is not in contradiction with the spec.

Best regards,

Hoang Nguyen
Mitsubishi Semiconductor

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Subject: Re: s2ibis2 question?
To: ibis@vhdl.org
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From: hoang@msai.mea.com (Hoang Nguyen)
Date: Tue, 15 Oct 96 11:24:21 EDT
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From owner-ibis  Fri Oct 18 10:19:46 1996
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To: ibis@vhdl.org
Subject: Approved, Bird 37.3
Date: Fri, 18 Oct 1996 10:08:49 -0700
From: Stephen Peters <speters@ichips.intel.com>


Hello All:

   Here is the text of bird 37.3, with the
editorial corrections included.

                 Regards,
                 Stephen Peters
                 Intel Corp.


================== cut here =============================
 
=============================================================================

                 Buffer Issue Resolution Document  (BIRD)
BIRD ID#:        37.2
ISSUE TITLE:     Enhancement To The Package Model (.pak file) Specification
REQUESTER:       Stephen Peters
DATE SUBMITTED:  Sept 23, 1996
DATE ACCEPTED BY IBIS OPEN FORUM:  Oct 18, 1996

******************************************************************************
******************************************************************************
STATEMENT OF THE ISSUE:  The current package model electrical description,
(as proposed in Bird 28.3 and accepted by the forum) has the restriction
that all the sections of a package stub connect in a series fashion, with 
no branches or stubs allowed.  This limits the usefulness of the
description when trying to describe BGA or other packages where branches
or forks off the main package stub may be present.  This BIRD corrects
this deficiency by adding two new subparameters to the [Pin Numbers] keyword
called 'Fork' and 'Endfork'.  This bird also eliminates the Matrix
description format (as introduced by Bird28.3) from the package description.
******************************************************************************
STATEMENT OF THE RESOLVED SPECIFICATIONS:  Following are the specific changes
to the specification (spec as amended by Bird 28.3).

1.  The Sub-params list of the [Pin Numbers] keyword is changed to that
shown below

|Sub-Params: Len, L, R, C, Fork, Endfork

2.  The text following the first paragraph of the Usage Rules section of the
[Pin Numbers] keyword is replaced by the following:
|
|             Subparameters:
|             The Len, L, R, and C subparameters specify the length, 
|             inductance, capacitance and resistance of each section of
|             each stub on a package.
|             The Fork and Endfork subparameters are used to denote branches
|             from the main package stub. 
|             Len     The of a package stub section.  Lengths are given
|                     in terms of arbitrary 'units'.
|             L       The inductance of a package stub section, in terms of
|                     'inductance/unit length'.  For example, if the total
|                     inductance of a section is 3.0nH and the
|                     length of the section is 2 'units', the inductance 
|                     would be listed as L = 1.5nH  (i.e. 3.0 / 2). 
|             C       The capacitance of a package stub section, in terms of
|                     capacitance per unit length.
|             R       The DC (ohmic) resistance of a package stub section, in
|                     terms of ohms per unit length.
|             Fork    This subparameter indicates that the sections
|                     following (up to the Endfork subparameter) are part
|                     of a branch off of the main package stub.  This 
|                     subparameter has no arguments.
|             Endfork This subparameter indicates the end point of a
|                     branch.  For every Fork subparameter there must be
|                     a corresponding Endfork subparameter.  As with the
|                     Fork subparameter, the Endfork subparameter has no
|                     arguments.
|
|             Specifying a Len or L/R/C value of zero is allowed.  If
|             Len = 0 is specified, then the L/R/C values are the total
|             for that section.  If a non-zero length is specified, then
|             the total L/R/C for a section is calculated by multiplying 
|             the value of the Len subparameter by the value of the L,
|             R or C subparameter. However, if a non-zero length section
|             is specified, the L and C for that section should be treated
|             as distributed elements.
|
|             Using The Subparameters to Describe Package Stub Sections:
|             A section description begins with the Len subparameter and
|             end with the backslash (/) character.  The value of the Len, L,
|             R and C subparameters and the subparameter itself are 
|             separated by an equals sign (=); whitespace around the equals 
|             sign is optional.  The Fork and Endfork subparameters
|             are placed between section descriptions (i.e. between the
|             concluding backslash of one section and the 'Len' parameters
|             that starts another).  All package stub descriptions must 
|             contain the same number of sections however, a particular 
|             section description can contain no data (i.e. the description 
|             is given as 'Len = 0 /').
|             
|             Legal Subparameter Combinations for Section Descriptions:
|             A) A single Len = 0 subparameter, followed by a slash.
|             The is used to describe a section with no data.
|
|
|             B)  Len, and one or more of the L, R and C subparameters.  If
|             the Len subparameter is given as zero, then the L/R/C sub-
|             parameters represent lumped elements.  If the the Len sub-
|             parameter is non-zero, then the L/R/C subparameters represent
|             distributed elements.
|
|             D)  Single Fork or Endfork subparameter.  Normally, a package
|             stub is described as several sections, with the Fork and Endfork
|             subparameters surrounding a group of sections in the middle of
|             the complete package stub description.  However, it is legal
|             for the Fork/Endfork subparameters to appear at the end of a 
|             section description.  The package pin is connected to the 
|             last section of a package stub description not surrounded by
|             a Fork/Endfork statements.  See the examples below. 
|
|             Package Stub Boundaries:
|             A package stub description starts at the connection to 
|             the die and ends at the point at which the package pin 
|             interfaces with the board or substrate the IC package 
|             is mounted on.  Note that in the case of a component
|             with thru-hole pins, the package stub description should
|             include only the portion of the pin not physically 
|             inserted into the board or socket.  However, it is legal for
|             a package stub description to include both the component
|             and socket together if this is how the component is 
|             intended to be used.
|             

3.  The examples added by Bird 28.3 are replaced by the following
|
|A three section package stub description that includes a bond wire
|(lumped inductance), a trace (treated as a transmission line with DC
|resistance), and a pin modeled as a lumped L/C element.
|
[Pin Number]
A1 Len=0 L=1.2n/ Len=1.2 L=2.0n C=0.5p R=0.05/ Len=0 L=2.0n C=1.0p/
|
|Pin A2 below has an section with no data
|
A2 Len=0 L=1.2n/ Len=0/ Len=1.2 L=2.0n C=0.5p R=0.05/ Len=0 L=2.0n C=1.0p/
|
|A section description using the Fork and Endfork subparameters.  Note
|that the indentation of the Fork and Endfork subparameters are for
|readability and are not required.
|
A1 Len=0 L=2.3n /        | bondwire
Len=1.2 L=1.0n C=2.5p /  | first section
 Fork                    | indicates the starting of a branch
 Len=1.0 L=2.0n C=1.5p / | section 
 Endfork                 | ending of the branch
Len=0.5 L=1.0 C=2.5p/    | second section 
Len=0.0 L=1.5n /         | pin
|
|Here is an example where the Fork/Endfork subparameters are at the
|end of a package stub description
|
B13 Len=0 L=2.3n /       | bondwire
Len=1.2 L=1.0n C=2.5p /  | first section
Len=0.5 L=1.0 C=2.5/     | second section, pin connects here
Fork                     | indicates the starting of a branch
Len=1.0 L=2.0n C=1.5p /  | section 
Endfork                  | ending of the branch

|4. The [Model Data] and [End Model Data] keywords revert back to
| there former (pre bird 28.3) definitions.


******************************************************************************
ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:
     This bird grew out of the need to describe a particular structure found
in BGA type packages.  In these packages, the trace that connects the die 
pad to the via for the 'ball' does not stop there.  For manufacturing
reasons the trace continues out to the edge of the board and thus forms
a 'stub' or branch off the main pad to ball (or pin) connection.  Because
of the need to stick with the existing section based description, the 
fork and Endfork subparameters were chosen.

REVISIONS FOR 37.1:
   Based on comments received, removed backslash ("/") from the Fork and 
Endfork syntax, added a description of the package stub boundaries, and
added two examples.  I also added a recommendation that non-zero length
section descriptions be treated as distributed elements.

REVISIONS FOR 37.2
   Until the forum can agree on a method to describe coupling, the
'Matrix' subparameter has been removed from the package description.
Hopefully, it will be reintroduced when a common matrix description
format had been agreed upon.


From owner-ibis  Mon Oct 21 09:50:46 1996
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Date: Mon, 21 Oct 1996 09:19:21 +0800
From: dileep@contec.Apsimtech.COM (Dileep Divekar)
Message-Id: <9610211619.AA12459@contec13.contec.COM>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Comments on bird 35.2 - Multi-Staged Outputs
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII

I have some general comments about this bird.

I think this makes the specification quite complex and
I was just wondering if we have some idea as to how many
IC manufacturers are willing spend the resources required
to provide this level of detail.

So far, ibis specification was simulator independent.
That is, it was possible to develop a model without
having to use a simulator and also, the model developer
could pretty much predict what the characteristics will be,
from a simulator. In this case, you have to run a simulator
to see what the output characteristcs are going to be. And then
you have to adjust various i-v curves without really having
any physical clue as to how to adjust these values.
I was just curious if any one has actually attempted to develop
such a model and if so, whether they will be willing to share
their experiences as to how they did it, how much time they
spent and finally what was the difference in the final signal
integrity results.

As a general philosophical comment, one has to realize that
one should be willing to give up a certain level of detail
if one wants to use the behavioral models with all the advantages
they offer. At some point, one has to say that we can take the
behavioral model only so far and it cannot do everything.
------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

From owner-ibis  Mon Oct 21 16:43:29 1996
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Date: Mon, 21 Oct 96 14:42:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Mon, 21 Oct 96 16:30:09 PDT_6@ccm.fm.intel.com>
To: ibis@vhdl.org, ibis-users@vhdl.org
cc: dileep@contec.Apsimtech.COM
Subject: Re: Comments on bird 35.2 - Multi-Staged Outputs


Text item: 

Dileep,

You have a lot of good points in your opinion regarding BIRD 35.2.  However, I 
think that this BIRD is very important, because there are some new features in 
some of our buffers which could not be modeled without it.

The problem is that these features are not just minute accuracy differences, 
they are very important in terms of signal integrity.  Leaving them out might 
make the difference between making it or failing.  For that reason, I believe 
the user of those models will want to see those features being modeled.

Arpad Muranyi
Intel Corporation
================================================================================

I have some general comments about this bird.

I think this makes the specification quite complex and
I was just wondering if we have some idea as to how many
IC manufacturers are willing spend the resources required
to provide this level of detail.

So far, ibis specification was simulator independent.
That is, it was possible to develop a model without
having to use a simulator and also, the model developer
could pretty much predict what the characteristics will be,
from a simulator. In this case, you have to run a simulator
to see what the output characteristcs are going to be. And then
you have to adjust various i-v curves without really having
any physical clue as to how to adjust these values.
I was just curious if any one has actually attempted to develop
such a model and if so, whether they will be willing to share
their experiences as to how they did it, how much time they
spent and finally what was the difference in the final signal
integrity results.

As a general philosophical comment, one has to realize that
one should be willing to give up a certain level of detail
if one wants to use the behavioral models with all the advantages
they offer. At some point, one has to say that we can take the
behavioral model only so far and it cannot do everything.
------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

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X-Sun-Charset: US-ASCII
Cc: dileep@contec.Apsimtech.COM
Subject: Comments on bird 35.2 - Multi-Staged Outputs
To: ibis@vhdl.org, ibis-users@vhdl.org
Message-Id: <9610211619.AA12459@contec13.contec.COM>
From: dileep@contec.Apsimtech.COM (Dileep Divekar)
Date: Mon, 21 Oct 1996 09:19:21 +0800
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From owner-ibis  Mon Oct 21 17:13:13 1996
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Date: Mon, 21 Oct 96 16:49 PDT
From: chris@icx.com ( Chris Reid)
To: ibis-users@vhdl.org, ibis@vhdl.org
Subject: Bird 35.2

Arpad,

In support of Dileep's comments, is it possible to model the
multi-stage effect with V-T curves?  In other words, if we
already have a technique for capturing the significant effects
of multi-stage drivers we should not add another method to do
the same thing.

I don't know the answer to this question, but I would like
to see a demonstration of the correct answer one way or another.
If Ibis can't model these drivers then we do need a technique
to handle them.

Chris Reid


From owner-ibis  Tue Oct 22 20:40:04 1996
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Date: Tue, 22 Oct 96 20:30:11 PDT
From: scotts@actel.com (Scott Schlachter)
Message-Id: <9610230330.AA03124@ricky.sun_net>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: R_Pad?

Hello IBIS folk,

I'm participating in my companies initial developement stages of 
generating IBIS files, and currently we are simultaniously 
investigating generating them from both actual silicon, as well
as from spice netlists.  Were new to this email list, so
please excuse us if this has been discussed:

I have searched all of the documents that I could find, including 
searching through the email archives, but we are still having
trouble answering this one question:  How do we deal with a 
Pad resistance (CMOS)... R_comp would have been perfect for this.  It
seems that those who asked about R_comp in the past were told
to figure it into the R_package (or R_pin).  However, when the data
is collected from real silicon without the package (using a tester's
probe leads directly on the die's I/O pads), any resistance between the 
I/O pad and the I/O buffer circuitry gets included...  So 
the test yeilds Pull-up and Pull-down data that includes an effective
R_comp.  For those who have designs with a built-in resistance between
your pad and your I/O circuitry, how did you deal with this since the
specs don't allow for R_comp, and including this resistance in the 
R_package is (seems) impossible?  

The thing that flagged us to this problem was that our Pull-down curve
(after subtracting the Power-clamp diode data from the initial pull-down
data) gets brought down to close to 0 current when there's about a diode 
voltage above Vcc on the pin  (in our initial SPICE testing where we 
included a resistance between the I/O circuitry and the Pad).

Thanks in advance,
-Scott Schlachter
 Actel Corporation
 Sunnyvale, CA

From owner-ibis  Wed Oct 23 09:06:10 1996
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Date: Wed, 23 Oct 96 08:53:00 PDT
From: Will Hobbs <Will_Hobbs@ccm.jf.intel.com>
Message-ID: <Wed, 23 Oct 96 08:55:15 PDT_1@ccm.jf.intel.com>
To: owner-ibis@vhdl.org, ibis@vhdl.org, ibis-users@vhdl.org
Subject: Re: R_Pad?


Text item: 

IBISians,

Pad resistance is generally encompassed in the R_package. I'm surprised if this 
isn't sufficient, given the vanishinly small value of the pad resistance and its
immediate interconnection to bonding wires. However, as a tribute to Arpad 
Muranyi, the technical father of IBIS, I think an R_pad keyword would be 
terrific. And perhaps I'm wrong about whether or not there is a technical reason
to break it out, so I'll defer to those who perceive a real need.

Will

Hello IBIS folk,

I'm participating in my companies initial developement stages of 
generating IBIS files, and currently we are simultaniously 
investigating generating them from both actual silicon, as well 
as from spice netlists.  Were new to this email list, so
please excuse us if this has been discussed:

I have searched all of the documents that I could find, including 
searching through the email archives, but we are still having 
trouble answering this one question:  How do we deal with a
Pad resistance (CMOS)... R_comp would have been perfect for this.  It 
seems that those who asked about R_comp in the past were told
to figure it into the R_package (or R_pin).  However, when the data 
is collected from real silicon without the package (using a tester's
probe leads directly on the die's I/O pads), any resistance between the 
I/O pad and the I/O buffer circuitry gets included...  So
the test yeilds Pull-up and Pull-down data that includes an effective 
R_comp.  For those who have designs with a built-in resistance between 
your pad and your I/O circuitry, how did you deal with this since the 
specs don't allow for R_comp, and including this resistance in the 
R_package is (seems) impossible?

The thing that flagged us to this problem was that our Pull-down curve 
(after subtracting the Power-clamp diode data from the initial pull-down 
data) gets brought down to close to 0 current when there's about a diode 
voltage above Vcc on the pin  (in our initial SPICE testing where we 
included a resistance between the I/O circuitry and the Pad).

Thanks in advance,
-Scott Schlachter
 Actel Corporation
 Sunnyvale, CA

Text item: External Message Header

The following mail header is for administrative use
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***IF THERE ARE PROBLEMS SAVE THESE HEADERS***.

Subject: R_Pad?
To: ibis@vhdl.org, ibis-users@vhdl.org
Message-Id: <9610230330.AA03124@ricky.sun_net>
From: scotts@actel.com (Scott Schlachter)
Date: Tue, 22 Oct 96 20:30:11 PDT
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From owner-ibis  Wed Oct 23 09:53:49 1996
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Message-Id: <199610231642.JAA04144@ichips.intel.com>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: R_Pad?
Date: Wed, 23 Oct 1996 09:43:04 -0700
From: Stephen Peters <speters@ichips.intel.com>


Hello Scott, and fellow IBISains:

    If I recall past conversations correctly, resistance 
between the pad and the active xsistors has been accounted 
for by including it's effects in the pullup and pullown curves.
At least, that is how I have done models before.  I'm
curious however -- do you see a reason why this resistance
should be called out seperatly?  It's a good question....

                    Regards,
                    Stephen Peters
                    Intel Corp.



Hello IBIS folk,

I'm participating in my companies initial developement stages of 
generating IBIS files, and currently we are simultaniously 
investigating generating them from both actual silicon, as well
as from spice netlists.  Were new to this email list, so
please excuse us if this has been discussed:

I have searched all of the documents that I could find, including 
searching through the email archives, but we are still having
trouble answering this one question:  How do we deal with a 
Pad resistance (CMOS)... R_comp would have been perfect for this.  It
seems that those who asked about R_comp in the past were told
to figure it into the R_package (or R_pin).  However, when the data
is collected from real silicon without the package (using a tester's
probe leads directly on the die's I/O pads), any resistance between the 
I/O pad and the I/O buffer circuitry gets included...  So 
the test yeilds Pull-up and Pull-down data that includes an effective
R_comp.  For those who have designs with a built-in resistance between
your pad and your I/O circuitry, how did you deal with this since the
specs don't allow for R_comp, and including this resistance in the 
R_package is (seems) impossible?  

The thing that flagged us to this problem was that our Pull-down curve
(after subtracting the Power-clamp diode data from the initial pull-down
data) gets brought down to close to 0 current when there's about a diode 
voltage above Vcc on the pin  (in our initial SPICE testing where we 
included a resistance between the I/O circuitry and the Pad).

Thanks in advance,
-Scott Schlachter
 Actel Corporation
 Sunnyvale, CA

From owner-ibis  Wed Oct 23 12:14:27 1996
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Date: Wed, 23 Oct 96 12:05 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS MINUTES 10/18/96

 DATE: October 23, 1996

 SUBJECT: 10/18/96 EIA IBIS Open Forum Minutes
  
 VOTING MEMBERS AND 1996 PARTICIPANTS LIST:
 AMP                            Hank Herrmann*, Tim Minnick, Russ Moser,
				Ray Ziesse*, Jeff Walden*
 Applied Simulation Technology  Dileep Divekar*, Norio Matsui, Antonis Orphanou
    (formerly Contec)
 Cadence Design                 C. Kumar*
 Cypress                        Bruce Wenniger
 Hewlett Packard, EEsof         Karl Kachigan, Henry Wu
 HyperLynx                      Kellee Crisafulli
 INCASES                        Olaf Rethmeier, Ralf Bruening
 Intel Corporation              Stephen Peters*, Will Hobbs, Arpad Muranyi*,
				John Keifer, Aaron Tang, Duane Quiet,
				[Donald Telian], Jim Kruchowski
 Interconnectix, Inc.           Bob Ross*, Chris Reid
 Meta-Software                  (Sanjay Gangal)
 Mitsubushi                     Tam Cao, Hoang Nguyen
 Motorola                       Ahmed Omer
 National Semiconductor         Syed Huq*, [Donald Snyder], Chune-Sin Yeh,
				[Bill Aronson]
 NCR (formerly ATT-GIS)         Dave Moxley*, Richard Mellitz
 NEC                            (Hiroshi Matsumoto),
 Quad Design                    Jon Powell, Chris Rokusek*
 Quantic Laboratories           (Mike Ventham)
 Texas Instruments              Roger Cline, Ben Andresen, Sri Jandhyala,
				Tareq Shahwan, Dan Phipps
 Thomson-CSF/SCTF               (Jean LeBrun)
 UniCAD Canada Ltd.             Celso Faia
 Veribest                       Ian Dodd*, David Wiens
 VLSI Technology                Dick Ulmer, Sung Oh, Swami Gangadharan,
				Daniel Kim, Tom Dockery, D.C. Sessions,
				Hrish Patel
 Zuken-Redac                    (John Berrie)
 
 OTHER PARTICIPANTS IN 1996:
 3M                             Fran Hart*, George Hare*
 Alcatel                        John Fitzpatrick
 Altera                         Vadim von Brzeski
 Apteq Design System            Dan FitzPatrick 
 Compaq                         Mark Leonard
 Digital Equipment Corp.        Jeff Chu*
 EIA                            Patti Rusher
 IC Works                       Eric Chen
 Mentor Graphics                Kim Owen
 Micron Technology              Brian Johnson                       
 MicroSim                       Ralph Perez
 Molex                          Gus Panella
 North Carolina State U.        (Michael Steer)
 Oki Semiconductor              Tom Chao
 Philips Semiconductor          Mike Magdaluyo
 Rockwell Collins               Thomas Thurman
 S3, Inc.                       Sarathy Sribhashyam, Phap Duong    
 Seimans Nixdorf                Arnaud Lacariere
 Symmetry                       Andy Hughes
 Tektronix, Inc.                Brock Hannibal
 TRW & Free Model Foundation    Robert Harrison
 VTC, Inc.                      Bob Ward
 Zeelan Technology              George Opsahl

 In the list above, attendees at the meeting are indicated by *.  Principle
 members or other active members who have not attended are in parentheses.
 Participants who have joined another organization are in square brackets.

 Upcoming Meetings: The bridge numbers for future IBIS teleconferences are as 
 follows:

      Date       Bridge Number    Reservation #    Passcode  
      11/08/96   (916) 356-9200   2-104708         1692479

 All meetings are 8:00 AM to 9:55 AM Pacific Time.  We try to have agendas out 
 7 days before each open forum and meeting minutes out within 7 days after.  
 When you call into the meeting, ask for the IBIS Open Forum hosted by Will 
 Hobbs and give the reservation number and passcode.
 
 NOTE: "AR" = Action Required.
 
 -------------------------------- MINUTES -------------------------------------

 INTRODUCTIONS
 Jeff Walden from AMP works with Ray Ziesse and is involved with connector
 modeling.

 George Hare from 3M is in the Electrical Products Division in Texas and
 has been working on modeling issues for the last six months.


 EIA MEMBERSHIP AND TREASURER'S REPORT
 Bob Ross reported that the EIA IBIS ledger remains at $9,285  for September,
 1996.  However some EIA shared expenses will be deducted by the end of the
 year.


 MINUTES REPORT, MISC.
 Fran Hart reported that she is with the Electronic Products Division of 3M,
 not the Electronics Products Group as previously stated.
 

 MISCELLANY/ANNOUNCEMENTS
 Bob Ross reported that each IBIS reflector mailing list contains over 290
 people from all over the world.  Each mailing typically generates a few
 bounced messages, typically because of people moving on and because of local
 computer network problems.  Bob usually tries to forward the mail in a few
 days or attempts to contact the site "postmaster".  However, if the problem
 is not resolved in a few days, the name is removed on the list.  So, if you
 find that you are not receiving messages, you may have been dropped.  One way 
 to find out is to check the e-mail archives (email.archive and monthly
 archives) to see if you have received the most recent messages.


 PRESS AND WEB PAGE UPDATES
 Syed Huq reported that within a few weeks he will add links to an HTML version
 of the EE Times Article and to the BIRDs and the Cookbook on vhdl.org.  He
 also plans some format changes on the official EIA/IBIS home page.

 Bob Ross also reported "PCB design tools continue Windows juggernaut", 
 Computer Design, September 1996, pp. 35-38 contain reference to VeriBest 
 usage of IBIS models.


 NEW MODELS
 Arpad Muranyi has several more Intel models available under NDA.  He will
 submit the updated list to Jon Powell.

 Bob Ross reported that the Free Model Foundation now has 29 contributed
 IBIS models under

    ftp://vhdl.org/vi/fmf/fmf_public_models/ibis
 
 Arpad also raised the issue that the response time on vhdl.org is very slow.
 Bob has experienced reasonably fast responses, so he feels that the problem
 may possibly be internal to Intel.  In any case both will try again to see if
 there is a response problem.  [Bob and Arpad both found the response normal.]


 OPENS FOR NEW ISSUES
 Ray Ziesse on AMP patent position.
 C. Kumar on V/T waveform problems with IBIS Version 2.1.

 
 AMP PATENT POSITION
 Ray Ziesse responded to an earlier commitment that AMP provide its position
 to the Committee concerning Patent # 5,081,602 on Computer Simulator for
 Electrical Connectors.  (Refer to the September 6, 1996 IBIS Open Forum
 Minutes.)

 A licensing agreement is available on Patent # 5,081,602.  It can be obtained
 by contacting.

    Mr. Bruce Wolstoncroft
    The Whitaker Corporation
    Phone: (302) 633-2745


 DESIGN SUPERCON97
 Syed Huq reported that National Semiconductor has formally offered to host
 the IBIS Face-to-face meeting in Santa Clara on the Monday before Design
 SuperCon97 at the end of January.  National will provide the room, lunch and
 support equipment.  Syed felt that an EIA procedural rule prohibited a company
 such as National from hosting a formal EIA meeting on company premises.  [This
 is not true, and in fact is encourage, based on a response from Patti Rusher.]

 We expect to formally select the host company at the next Open Forum meeting.
 Anyone else wishes to be considered should notify Bob Ross.

 Bob expects the meeting agenda to include some practical experiences regarding
 generating IBIS models by silicon vendors and by customer's with internal ASIC
 development capability.  EDA vendors may be able to share more information on
 internal utilities.  Bob also expects more discussions on model validation.

 Arpad Muranyi followed up on a point made at the last meeting that the 
 Committee should consider holding some meetings on the East Coast for 
 geographical balance.  Bob indicated that the two traditional Face-to-face
 meetings are held at the Design SuperCon location (Santa Clara, California) 
 and at wherever the Design Automation Conference (DAC) is held.  The location
 in June 1997 is in Anaheim, CA).  Many active IBIS Committee members already 
 attend these conferences.  So the opportunity for meetings elsewhere depend on
 DAC locations.  Possibly some working group Face-to-face meetings can be held,
 if needed, on the East coast.


 DAC97 PLANNING (AND OTHER MEETINGS)
 Bob Ross indicated that EIA usually plans to have a Standards Booth covering
 the activities of all committees under EIA/EIG.  The IBIS Open Forum Committee
 shared expenses with other standards groups last year, and we will probably do
 so again this year.

 
 S2IBIS PLANS
 Based on recent reflector activity, there are several questions and problems
 with s2ibis2.  Bob Ross reported that the original s2ibis Version 2.091 was
 posted as a BETA version on vhdl.org around November, 1995.  Some significant
 concerns including crashes, functional errors, and functional omissions have
 been reported.  NCSU has used all their funding for the existing development
 and has not gotten new funding from DARPA to finish the job.  NCSU has also
 investigated commercial opportunities.  Bob offered several options to get
 the s2ibis2 code beyond the prototype level and to be functionally usable:

   1. NCSU "steal" some time to complete the job.
   2. Fund a new student for several months to complete the job.
   3. Some other company take over "ownership" and complete s2ibis2.
   4. Some individual be contracted to finish the job.

 Ian Dodd indicated that VeriBest has made its own corrections and is willing
 to communicate them publicly.  VeriBest may offer their s2ibis conversion
 utility to the public domain.  They will report some significant problems
 that they have discovered on the IBIS reflector.

 Syed Huq felt that NCSU should be encouraged to finish the job.  Bob felt
 that while there are several items that need to be fixed, the completion
 project was still of limited scope.  There is interest in an NT based
 utility.  However, Bob felt this would be beyond the scope of this project.
 
 AR - Bob Ross work with NCSU to correct some defects and complete s2ibis2.

 AR - Ian Dodd post the problems he discovered.  Optionally, Ian work with
 Bob Ross to post a working revised s2ibis2 conversion package if he obtains
 permission.

 Arpad Muranyi mentioned that his IBIS Center development utility is available
 to IBIS Committee members.  He is restricted by a licensing agreement to
 50 copies.  Arpad cannot provide support but would welcome comments and 
 feedback.  The utility is not general.  It focuses on CMOS technology and 
 does not, for example, support ECL technologies.  It does the following:

   1. Reads simulated data from template files
   2. Graphically displays the simulated data
   3. Creates an IBIS Model set of data
   4. Graphically displays the IBIS Model tables
   5. Construct an IBIS Component model from several Models

 The graphical interface supports zooming.  Templates are provided to set up
 the simulations to generate the initial simulated data, as a separate process.
 The utility is available for Sun Unix and DOS workstations.


 IBIS V/T PROBLEM WITH VERSION 2.1 IBIS MODELS
 C. Kumar raised the issue that some Version 2.1 level IBIS models contain
 V/T data that converge slowly to the final DC value.  One issue is what may
 be a reasonable truncation criteria so that one can properly focus on the 
 faster transition portion.  Several people suggested experience using one
 percent.  Kumar questioned whether this should be standardized.  Too much
 truncation creates a DC mismatch.

 Chris Rokusek stated that the percentage voltage versus time approach can
 produce stable results.  Too much truncation may hide other artifacts 
 related to noise and EMI.  Any criteria could be put in a cookbook for
 guidance.

 How C_comp interacts is a related issue.  An actual fixed C_comp used in
 the IBIS model differs from any non-linear capacitance in the device or
 Spice model.  These capacitances cannot be removed.  Therefore, it is
 realistic that a simulation could differ from a "golden response".  The
 point about the golden response is that it is a response based on a
 prescribed condition.  Simulators probably have different algorithms to
 describe transitions, so one test of accuracy is how close the response
 is to the "golden response".

 AR - Kumar write up the specific issues and concerns on the IBIS reflector. 


 BIRD37.2
 Stephen Peters presented BIRD37.2 as a modification to BIRD28.3 which
 extended the package model by allowing cascaded sections and cascaded
 matrix sections.  The matrix addition is removed.  A simple Fork and
 End Fork branching capability is added.

 Per a Package Committee request, Bob Ross gave background of the existing
 package issues under discussion.  Package models extensions consist of
 BIRD28.3 and BIRD37.2.  At the other extreme electrical boards can be
 described by proprietary physical data bases and is being standardized by 
 EDIF 4 0 0.  The IBIS committee has been interested in board electrical 
 descriptions for such components as SIMMs and MCMs.  These descriptions would 
 not be for large boards.  They would allow models where the physical data is
 is not available (and for boards being designed).  Transmission line models 
 are appropriate.  Several formats have been proposed: nodal descriptions 
 (Spice-like), transmission line connection syntax (Z0, TD, Length, Forks), 
 and field extractor like (L, C, length) formats.  In practice, single line 
 structures are quite adequate for electrical boards for timing and signal
 integrity analysis.

 Connector models are another requirement.  Single line models can be used.
 However there is strong interest in multi-line (coupled) models to support
 multiboard applications.  The typical analysis may cover cross-talk, ground
 bounce and differential nets.  BIRD36 covers both the single line electrical
 board descriptions and also multi-line connector models.

 BIRD31.3 is a connector only proposal that is an extension of BIRD28.3 to
 cover two-terminal devices.  It is currently on hold pending the resolution
 of BIRD36.  BIRD32 is a coupling proposal extension that deals with subcircuit
 matrices as a more economical way of formatting matrix coupling.  This is also
 on hold.

 Thus the proposals currently under consideration are BIRD37.2 for packages and
 BIRD36 for electrical board descriptions including connectors.

 Several minor editorial corrections were suggested for BIRD37.2.

 BIRD37.2 was approved unanimously.

 AR - Stephen Peters issue approved BIRD37.3 with the corrections.  [Done]


 PACKAGE COMMITTEE REPORT
 Stephen Peters reported on Package Committee discussions.  One consensus is
 that the electrical description is positioned to support smaller boards is
 not intended to be as comprehensive as a full physical description.  So
 uncoupled networks are adequate.  The EDIF 4 0 0 format covers the full
 physical description including coupling and contains references to IBIS
 models.
 
 Connectors are typically a repetitive structure that can be described by
 simple, single line, pin-to-pin formats and also by coupling matrix formats.
 EDA vendors need coupling.  So the question is how to describe the coupling.

 Hank Herrmann has made some changes to BIRD36 based on some previous meeting
 comments and suggestions.  He will forward the revised BIRD36 to Stephen
 to distribute to the Package Committee.  Hank noted that single line 
 connector models could be provided immediately once the format is defined.
 Package Committee meetings will continue on Fridays, 8:30 A.M. to 10 A.M.

 AR - Stephen Peters set up the Package Committee meeting.

 
 SPECIFICATION COMMITTEE REPORT  
 Bob Ross reported that Ahmed Omer, John Fitzpatrick, Jon Powell and Bob
 held several conference call meetings resulting in BIRD39.  Its key
 aspects are:

 - A new optional specification keyword [Model Spec] under [Model]
 - [Model Spec] subparameters with typ, min and max columns
 - Vinl and Vinh thresholds extended to min and max
 - Hysteresis thresholds
 - Overshoot and dynamic overshoot parameters
 - Pulse immunity parameters

 Arpad Muranyi questioned whether an area or energy definition could be used
 for dynamic overshoot.  Bob responded that the committee had considered such
 an approach.  The problem was in obtaining a value.  Also the committee
 found that the source data information came in all types of formats.  For
 example a PCI bus overshoot specification is derivable from a current limit
 value and clamping diode details.  Some of the information may be in general
 sections showing typical characteristics rather than associated with a
 specific part.  So the Committee opted for a simpler method where a voltage
 can exceed the overshoot value for a specified period of time as long as it
 remains below the dynamic overshoot limit value.  The pulse immunity values
 also provide a do-not-exceed value for a specified period of time beyond some
 existing thresholds.

 A vote will be scheduled at the next meeting.  Also a vote to reject BIRD38
 will be scheduled since BIRD39 supersedes BIRD38.
 
 
 BIRD35.2 - MULTI-STAGED OUTPUTS
 Bob Ross recently introduced BIRD35.2 proposing a revised scheduling method 
 He believes it is compatible to existing implementations, but plans to check
 with Jon Powell.
 
 
 EGG10 - PARSER ADDITIONS FOR NUMERICAL CHECKING
 Chris Rokusek indicated he could implement the proposed changes in one module
 so that the revised code could provide a new basis for further development.
 The unchanged ibischk2 would still be available.  Chris and Bob Ross need to 
 decide on some functionality details mentioned at the last meeting.

 AR - Chris Rokusek and Bob Ross decide on some functionality details and
 Chris produce the revised ibischk2.


 NEXT MEETING:
 The next meeting is on Friday, November 8, 1996, 8:00 A.M. to 9:55 A.M.
 BIRD39 and BIRD38 are scheduled for a vote.
 ==============================================================================
				       NOTES
 
 IBIS CHAIR: Bob Ross (503) 603-2523, Fax (503) 639-3469
	     bob@icx.com
	     Modeling Engineer, Interconnectix, Inc.
	     10220 SW Nimbus Ave, K4, Portland, OR 97223

 VICE CHAIR: Syed Huq (408) 721-4874, Fax: (408) 721-4785
	     huq@rockie.nsc.com
	     Staff Applications Engineer, National Semiconductor, M/S A-2595
	     2900 Semiconductor Drive, Santa Clara, CA 95052
 
 LIBRARIAN:  Jon Powell (805) 988-8250, Fax: (805) 988-8259
	     jonp@qdt.com
	     Transmission-Line Products Manager, Quad Design
	     1385 Del Norte Rd., Camarillo, CA 93010
 
 SECRETARY:  Vacant
 

 This meeting was conducted in accordance with the EIA Legal Guides and EIA
 Manual of Organization and Procedure.
 
 The following e-mail addresses are used:

   ibis-request@vhdl.org
       To join, change, or drop from either the IBIS Open Forum Reflector
       (ibis@vhdl.org), the IBIS Users' Group Reflector (ibis-users@vhdl.org)
       or both.  State your request.

   ibis-info@vhdl.org
       To obtain general information about IBIS, to ask specific questions
       for individual response, and to inquire about joining the EIA-IBIS
       Open Forum as a full Member.

   ibis@vhdl.org
       To send a message to the general IBIS Open Forum Reflector.  This
       is used mostly for IBIS Standardization business and future IBIS
       technical enhancements.

   ibis-users@vhdl.org
       To send a message to the IBIS Users' Group Reflector.  This is 
       used mostly for IBIS clarification, current modeling issues, and
       general user concerns.

   ibischk-bug@vhdl.org
       To report ibischk2 parser bugs.  The Bug Report Form Resides on
       vhdl.org in /pub/ibis/bugs/bugform.txt along with reported bugs.

 Information on IBIS technical contents, IBIS participants, and actual
 IBIS models are available on the IBIS Home page found by selecting the
 Electronic Information Group under:

   http://www.eia.org

 Check the pub/ibis directory on vhdl.org for more information on previous 
 discussions and results.  You can get on via ftp anonymous, "guest" login from 
 telnet or dial-in (415-335-0110), or send an e-mail request to the automatic 
 archive server, archive@vhdl.org.
 
 "IBIS Spoken Here" placards are available from Jon Powell (jonp@qdt.com) for 
 use at trade shows.
 ==============================================================================


From owner-ibis  Wed Oct 23 13:19:53 1996
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Message-Id: <199610232008.NAA23889@ichips.intel.com>
To: ibis@vhdl.org
Subject: IBIS packaging Subcommittee
Date: Wed, 23 Oct 1996 13:09:07 -0700
From: Stephen Peters <speters@ichips.intel.com>


Hello all:

   The IBIS packaging subcommittee will be meeting this
Friday.  Details are below:


Date:       Friday, Oct 25
Time:       8:30am to 10:00am  PDT
Phone #:    (916) 356-9200
Res #:      2-107696
Passcode:   3437649


  The agenda will be to continue our discussion on 
connector modeling.

           Regards,
           Stephen Peters
           Intel Corp.


From owner-ibis  Wed Oct 23 16:27:13 1996
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Date: Wed, 23 Oct 1996 18:17:25 -0500
From: omera@trailblazer.sps.mot.com (Ahmed Omer)
Message-Id: <9610232317.AA01794@trailblazer.aisl.aus>
To: ibis@vhdl.org
Subject: Ramp Def. ??
X-Sun-Charset: US-ASCII

Hello IBIS people

Is ramp rate defined as the time it takes the output to go:
(a) 20% to 80% of output final value
 or
(b) 20% to 80% of output voltage swing*

* I define voltage swing as the difference 
  between final value and initial value. 
 
For example;
Say, the output swings 1 to 5 volts.    |    5 v        ____
To calculate the ramp rate do I use     |              /
(a) 20% to 80% of 5 volts               |             /
 or                                     |            /
(b) 20% to 80% of 4 volts               |    1v ____/
 
Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
|Fax:	 512-933-5845                   | Austin, TX 78721                   |
|---------------------------------------+------------------------------------|

From owner-ibis  Wed Oct 23 18:29:30 1996
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Message-Id: <199610240118.SAA22195@ichips.intel.com>
To: ibis@vhdl.org
Subject: Ramp Def. ??
Date: Wed, 23 Oct 1996 18:18:45 -0700
From: Stephen Peters <speters@ichips.intel.com>


Hello Ahmed:

   It's the 20% to 80% of the voltage swing.  Specifically
the Dt number is calculated as (for rising wavefront)....

(time at which voltage waveform crosses [.8(voltage swing) +
starting voltage])  -  (time at which voltage waveform crosses
[.2(voltage swing) + starting voltage]).

         Hope that helps.

           Regards,
           Stephen Peters
           Intel Corp.




Hello IBIS people

Is ramp rate defined as the time it takes the output to go:
(a) 20% to 80% of output final value
 or
(b) 20% to 80% of output voltage swing*

* I define voltage swing as the difference 
  between final value and initial value. 
 
For example;
Say, the output swings 1 to 5 volts.    |    5 v        ____
To calculate the ramp rate do I use     |              /
(a) 20% to 80% of 5 volts               |             /
 or                                     |            /
(b) 20% to 80% of 4 volts               |    1v ____/
 
Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
|Fax:	 512-933-5845                   | Austin, TX 78721                   |
|---------------------------------------+------------------------------------|

From owner-ibis  Wed Oct 23 18:38:23 1996
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Date: Wed, 23 Oct 96 18:29 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org, omera@trailblazer.sps.mot.com
Subject: Re:  Ramp Def. ??

Ahmed:

Case (b).

The 20% and 80% voltage points are 1.8 V and 4.2 V.

Best Regards,
Bob Ross
Interconnectix, Inc.

> Date: Wed, 23 Oct 1996 18:17:25 -0500
> From: omera@trailblazer.sps.mot.com (Ahmed Omer)
> Message-Id: <9610232317.AA01794@trailblazer.aisl.aus>
> To: ibis@vhdl.org
> Subject: Ramp Def. ??
> X-Sun-Charset: US-ASCII
> Status: RO

> Hello IBIS people

> Is ramp rate defined as the time it takes the output to go:
> (a) 20% to 80% of output final value
>  or
> (b) 20% to 80% of output voltage swing*

> * I define voltage swing as the difference 
>   between final value and initial value. 
>  
> For example;
> Say, the output swings 1 to 5 volts.    |    5 v        ____
> To calculate the ramp rate do I use     |              /
> (a) 20% to 80% of 5 volts               |             /
>  or                                     |            /
> (b) 20% to 80% of 4 volts               |    1v ____/
>  
> Regards, Ahmed.
> |---------------------------------------+------------------------------------|
> |Ahmed Omer                             | Advanced Interconnect Systems Labs |
> |E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
> |      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
> |Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
> |Fax:	 512-933-5845                   | Austin, TX 78721                   |
> |---------------------------------------+------------------------------------|



From owner-ibis  Thu Oct 24 07:48:38 1996
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From: omera@trailblazer.sps.mot.com (Ahmed Omer)
Message-Id: <9610241438.AA02524@trailblazer.aisl.aus>
To: ibis@vhdl.org
Subject: Re: Ramp Def. ??
X-Sun-Charset: US-ASCII


Hello Bob and Stephen

	Thank you for your responses. Your answers are what I expected.
However, the IBIS specifications are not clear on that. In fact it defines 
ramp rate in both ways. So we should make correction on the specifications.

Regards, Ahmed.

>>>> Bob Ross wrote:

Ahmed:

Case (b).

The 20% and 80% voltage points are 1.8 V and 4.2 V.

Best Regards,
Bob Ross
Interconnectix, Inc.

>>>> Stephen Peters wrote:

Hello Ahmed:

   It's the 20% to 80% of the voltage swing.  Specifically
the Dt number is calculated as (for rising wavefront)....

(time at which voltage waveform crosses [.8(voltage swing) +
starting voltage])  -  (time at which voltage waveform crosses
[.2(voltage swing) + starting voltage]).

         Hope that helps.

           Regards,
           Stephen Peters
           Intel Corp.

>>>> Ahmed Omer wrote:

Hello IBIS people

Is ramp rate defined as the time it takes the output to go:
(a) 20% to 80% of output final value
 or
(b) 20% to 80% of output voltage swing*

* I define voltage swing as the difference 
  between final value and initial value. 
 
For example;
Say, the output swings 1 to 5 volts.    |    5 v        ____
To calculate the ramp rate do I use     |              /
(a) 20% to 80% of 5 volts               |             /
 or                                     |            /
(b) 20% to 80% of 4 volts               |    1v ____/
 
Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
|Fax:	 512-933-5845                   | Austin, TX 78721                   |
|____________________________________________________________________________|

From owner-ibis  Thu Oct 24 08:05:38 1996
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Date: Thu, 24 Oct 96 07:50:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Thu, 24 Oct 96 07:52:29 PDT_14@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re: Ramp Def. ??


Text item: 

It is 20-80% of the swing.
Arpad Muranyi
Intel Corporation

===========================================

Hello IBIS people

Is ramp rate defined as the time it takes the output to go:
(a) 20% to 80% of output final value
 or
(b) 20% to 80% of output voltage swing*

* I define voltage swing as the difference
  between final value and initial value.

For example;
Say, the output swings 1 to 5 volts.    |    5 v        ____
To calculate the ramp rate do I use     |              /
(a) 20% to 80% of 5 volts               |             /
 or                                     |            /
(b) 20% to 80% of 4 volts               |    1v ____/

Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:      512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36
 |
|Fax:      512-933-5845                   | Austin, TX 78721                   |

|---------------------------------------+------------------------------------|

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X-Sun-Charset: US-ASCII
Subject: Ramp Def. ??
To: ibis@vhdl.org
Message-Id: <9610232317.AA01794@trailblazer.aisl.aus>
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From owner-ibis  Thu Oct 24 08:37:41 1996
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From: "Boeckmann, Ed (Edward F)" <efboeckm@ingr.com>
To: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: Rising Waveform Loading Effects
Date: Thu, 24 Oct 1996 10:25:42 -0500
X-Mailer:  Microsoft Exchange Server Internet Mail Connector Version 4.0.994.57
Encoding: 41 TEXT

Hello to all,

I am concerned about the validity of using IBIS models for general
printed circuit board signal analysis in an environment of various types
of loads, transmission lines, vias, pads, connectors, various
terminations, etc.

According to the IBIS specification V2.1 dated Dec. 13, 1995,  for a
rising waveform (for example), there are various loads specified as
L_dut, R_dut, L_fixture, R_fixture, C_dut, and C_fixture.  In addition
data is to be taken with the effects of C_comp included.  There is
however no provision for generating curves with a transmission line load
which is more typically the case, especially for high speed circuits. in
actual circuit boards.

It is well known however, that the ramp rate and levels reached will be
affected by the loads. For example, changing  the values of R_fixture
and V_fixture on a typical buffer. (The s2ibis2 program will generate
different curves for different values of R_fixture, for example IBIS
curves for  50 ohms and 100 ohms is generated from a command file that
specified curves for 50 and 100 ohms.)

My question is this:  If in an actual simulation environment we really
have a different loading condition with transmission lines , vias, etc.,
how can we legitimately use an IBIS model that was generated with a
different lumped element loading condition ?

I hope someone can help me to understand how the IBIS models will
accurately produce the correct physical response with an arbitrary but
realistic loading condition, different from the test fixture, at least
to a level of accuracy close to that which would result from the
original transistor level spice model, say within 5%.

Ed Boeckmann,  "My comments reflect solely my own opinion!"
Intergraph Corp.
Huntsville AL 35894
tel. (205)-730-6219
fax (205)-730-6000
email efboeckm@ingr.com



From owner-ibis  Thu Oct 24 11:23:21 1996
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Message-Id: <m0vGUI4-000GjSC@icx.com>
Date: Thu, 24 Oct 96 11:14 PDT
From: bob@icx.com ( Bob Ross)
To: efboeckm@ingr.com, ibis-users@vhdl.org, ibis@vhdl.org
Subject: Re:  Rising Waveform Loading Effects

Ed:

Your concern about accuracy of IBIS models in simulation environments
is valid.  I do not want to get totally bogged down here in an 
accuracy debate, but I want to make a few points:

1. The IBIS models might be positioned at a higher level of abstraction
than Spice models.  IBIS models are based on actual measured or Spice
derived information.  So to the extent that the IBIS model is accurate
depends only on the source information.  IBIS models do not carry all
of the parameters that are contained in a Spice model.

2. IBIS models have performed very well in PCB design and simulation
environments.  The EDA vendors have algorithms which treat transmission
lines and vias and otehr effects very well.  Many times these elements
provide the dominant characteristics rather than the model details.

IBIS models are very suitable with large sized physical data bases (the
whole board) containing thousands of nets and many components.  Just
getting Spice models that are compatible (e.g., are of equal accuracy,
do not have conflicting options such as scaling factors, and are actually
available from the vendors, etc.) is in practice usually unrealistic.
Physical databases capture the layout of each net and locations of nearby
nets.  So board level analysis where random interactions can occur
is one area where IBIS models (or behavioral models in general) are
appropriate.

Spice analysis might be better for a detailed investigation of some
critical nets to validate a design or to really test some variations.
The network topology may be easier to describe here.

3. Regarding the Waveform extraction methodology, the objective is to
provide test loads which create the best model.  They need to be as
close as possible to the simulation enviroment.  In high speed applications
the transmission line load looks initially resistive, but may be at any
voltage from low state to high state (and beyond) based on the dynamic
reflection characteristics.  So I feel for CMOS technology that resistive
test loads to ground and Vcc of approximately 50 to 100 ohms (or whatever
the characteristic impedance) will provide the best model.  This set
spans the voltage range and provides the load resistance seen by the 
device.  Simulators properly handle any added capacitance and inductance
that is seen by the device.  

The IBIS mode architecture is a simplified representation of most 
devices for the purposes of modeling.  To the extent that the Spice model
architecture functions in the same manner, the IBIS model will be very
accurate.  A fixed percentage (such as 5%) accuracy when comparing
a Spice model and IBIS model directly under a test suite may not be
achieved, in my opinion, for many devices because of the internal non-linear
switching characteristics of actual Spice models (and devices).  However,
for timing and signal integrity analysis of real networks, the accuracy
is very good compared to a similar Spice analysis and measurements.

Best Regards,
Bob Ross
Interconnectix, Inc.

> Hello to all,

> I am concerned about the validity of using IBIS models for general
> printed circuit board signal analysis in an environment of various types
> of loads, transmission lines, vias, pads, connectors, various
> terminations, etc.

> According to the IBIS specification V2.1 dated Dec. 13, 1995,  for a
> rising waveform (for example), there are various loads specified as
> L_dut, R_dut, L_fixture, R_fixture, C_dut, and C_fixture.  In addition
> data is to be taken with the effects of C_comp included.  There is
> however no provision for generating curves with a transmission line load
> which is more typically the case, especially for high speed circuits. in
> actual circuit boards.

> It is well known however, that the ramp rate and levels reached will be
> affected by the loads. For example, changing  the values of R_fixture
> and V_fixture on a typical buffer. (The s2ibis2 program will generate
> different curves for different values of R_fixture, for example IBIS
> curves for  50 ohms and 100 ohms is generated from a command file that
> specified curves for 50 and 100 ohms.)

> My question is this:  If in an actual simulation environment we really
> have a different loading condition with transmission lines , vias, etc.,
> how can we legitimately use an IBIS model that was generated with a
> different lumped element loading condition ?

> I hope someone can help me to understand how the IBIS models will
> accurately produce the correct physical response with an arbitrary but
> realistic loading condition, different from the test fixture, at least
> to a level of accuracy close to that which would result from the
> original transistor level spice model, say within 5%.

> Ed Boeckmann,  "My comments reflect solely my own opinion!"
> Intergraph Corp.
> Huntsville AL 35894
> tel. (205)-730-6219
> fax (205)-730-6000
> email efboeckm@ingr.com





From owner-ibis  Fri Oct 25 14:58:58 1996
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From: chu@rock.enet.dec.com
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Date: Fri, 25 Oct 96 17:42:27 EDT
To: ibis@vhdl.org
Cc: chu@rock.enet.dec.com
Apparently-To: ibis@vhdl.org
Subject: Spice to IBIS Conversion

Hello Everyone:

This is for those who are interested in the Spice to 
IBIS conversion program, S2IBIS2. 

I have observed the following difficulty in generating 
the V/I curve for an I/O pin.  To generate a pull-up or 
pull-down curve for an I/O pin when enabled, s2ibis2 
creates a voltage source at the enable pin in the .spi 
file (say putx.spi for pull-up, typical and pin x as an 
example) to make sure that the output is active.  That 
was done correctly.  However, when comes to generate the 
pull-up of pull-down curves under disabled condition, no 
active voltage source is created in the .spi file (it 
will be dutx.spi or ddtx.spi in this case).  Anyone who 
has tried the tryme.s2i can look at the following two 
files, put8.spi and ddt8.spi.  In put8.spi, a voltage 
source, 'venas2i 61 0 dc 0' was generated to enable the 
output.  But in dut8.spi, node 61 is left floating.  
I tried to correct the problem by connecting a large 
resistor from the enable pin to VDD in the .sp file (the 
spice source file) to make that pin defaults to high.  
It fixed this situation but run into problem in other 
cases.     

Any feedback or comments from anyone would be very much 
appreciated.

Jeff Chu
Digital Equipment Corp.
77 Reed Road
Hudson, MA
01749
(508)568-4197
(508)568-5195  fax
email chu@rock.enet.dec.com

From owner-ibis  Fri Oct 25 13:55:12 1996
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To: bob@icx.com ( Bob Ross)
cc: efboeckm@ingr.com, ibis-users@vhdl.org, ibis@vhdl.org,
        brockh@mdhost.cse.tek.com
Subject: Re: Rising Waveform Loading Effects 
In-reply-to: Your message of "Thu, 24 Oct 1996 11:14:00 PDT."
             <m0vGUI4-000GjSC@icx.com> 
Date: Fri, 25 Oct 1996 13:43:49 -0700
From: Brock Hannibal <brockh@mdhost.cse.tek.com>


Hi all,

Let me add a thought. Ed Boeckman asks:

"I hope someone can help me to understand how the IBIS models will
accurately produce the correct physical response with an arbitrary but
realistic loading condition, different from the test fixture, at least
to a level of accuracy close to that which would result from the
original transistor level spice model, say within 5%."

I've found that board level simulation accuracy is difficult to quantify
as a percentage number. There are a number of contributing factors such
as etch width and thickness variations along the length of the interconnect
line, cross-section variations(dielectric thickness), dielectric constant
variation with frequency, humidity, temperature, etc. Most FR-4 type boards
are themselves about 10% components. Holding the boards to a tighter tolerance
is both expensive and difficult. 

It turns out that if the IBIS model is derived into a nominal resistive
load that is representative of the transmission line characteristic
impedance that the dominant effect in the simulation is usually the
transmission line formed by the interconnect. 

I have verified this by actual measurement in a number of cases. This is
not to say that the model is irrelevant, only that the model's  
output impedance curves and risetimes are not as critical as one might
think in predicting the performance of the system.

Brock Hannibal
Design Engineer
Tektronix, Inc.

From owner-ibis  Mon Oct 28 14:51:08 1996
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Date: Mon, 28 Oct 1996 17:34:36 -0400
From: Real Mongrain <mongrain@cae.ca>
To: ibis@vhdl.org
Subject: Low and high output level
Mime-Version: 1.0
Content-Type: text/plain
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Hi,

  I just started to do some simulations (with SigNoise) using a manufacturer's
model. My design is very simple : a driver connected to 3 receivers (the part is
an ABT buffer). I noticed that the signal reach a perfect 5v for the rising
waveform and reach a perfect 0v for the falling waveform. This Ibis model came
from a convertion (s2ibis). Is it because the internal input of the output buffer
has been set to 0 and vcc during the convertion (in the header file). 

  No real part will switch to a completly on(vcc) or completly off(0v) state, so
the shouldn't switch to these levels. How can i deal with that? For those who
already make simulations, have you ever meet this situation? 

Thanks,
Real Mongrain Jr.

From owner-ibis  Mon Oct 28 15:50:53 1996
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Date: Mon, 28 Oct 1996 09:10:36 -0800
From: Jon Powell <uunet!qdt.com!jonp@uunet.uu.net>
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Mime-Version: 1.0
To: Brock Hannibal <uunet!uunet!mdhost.cse.tek.com!brockh@uunet.uu.net>
Cc: Bob Ross <uunet!uunet!icx.com!bob@uunet.uu.net>,
        uunet!uunet!ingr.com!efboeckm@uunet.uu.net,
        uunet!uunet!vhdl.org!ibis-users@uunet.uu.net,
        uunet!uunet!vhdl.org!ibis@uunet.uu.net
Subject: Re: Rising Waveform Loading Effects
References: <199610252043.NAA07706@salope.cse.tek.com>
Content-Type: text/plain; charset=us-ascii
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Brock Hannibal wrote:
> 
> Hi all,
> 
> Let me add a thought. Ed Boeckman asks:
> 
> "I hope someone can help me to understand how the IBIS models will
> accurately produce the correct physical response with an arbitrary but
> realistic loading condition, different from the test fixture, at least
> to a level of accuracy close to that which would result from the
> original transistor level spice model, say within 5%."
> 
> I've found that board level simulation accuracy is difficult to quantify
> as a percentage number. There are a number of contributing factors such
> as etch width and thickness variations along the length of the interconnect
> line, cross-section variations(dielectric thickness), dielectric constant
> variation with frequency, humidity, temperature, etc. Most FR-4 type boards
> are themselves about 10% components. Holding the boards to a tighter tolerance
> is both expensive and difficult.
> 
> It turns out that if the IBIS model is derived into a nominal resistive
> load that is representative of the transmission line characteristic
> impedance that the dominant effect in the simulation is usually the
> transmission line formed by the interconnect.
> 
> I have verified this by actual measurement in a number of cases. This is
> not to say that the model is irrelevant, only that the model's
> output impedance curves and risetimes are not as critical as one might
> think in predicting the performance of the system.
> 
> Brock Hannibal
> Design Engineer
> Tektronix, Inc.


I must disagree with this statement. Though accurate transmission line
characteristics are crucial for simulation, risetime and IV curve
accuracy is also important. The IV curve vs line impedance directly
determines the incident wave height (and thus incident switching and/or
number of round-trips to switch) and crosstalk and overshoot are a
function of risetime/falltime as much as line coupling and impedance.

Jon Powell
Quad Design

From owner-ibis  Mon Oct 28 18:14:12 1996
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To: Jon Powell <uunet!qdt.com!jonp@uunet.uu.net>
cc: Brock Hannibal <uunet!uunet!mdhost.cse.tek.com!brockh@uunet.uu.net>,
        Bob Ross <uunet!uunet!icx.com!bob@uunet.uu.net>,
        uunet!uunet!ingr.com!efboeckm@uunet.uu.net,
        uunet!uunet!vhdl.org!ibis-users@uunet.uu.net,
        uunet!uunet!vhdl.org!ibis@uunet.uu.net, brockh@mdhost.cse.tek.com
Subject: Re: Rising Waveform Loading Effects 
In-reply-to: Your message of "Mon, 28 Oct 1996 09:10:36 PST."
             <3274E90C.3F54BC7E@qdt.com> 
Date: Mon, 28 Oct 1996 17:01:28 -0800
From: Brock Hannibal <brockh@mdhost.cse.tek.com>


Hi all,

Well Jon, I don't think we fundamentally disagree. It's more a matter of degree.
For instance, if I can hold tolerance of characteristic Z, losses, L and C of
vias, L and C of package pins, stability of power supplies, etc. to really
tight tolerances then I can make use of extremely accurate IBIS models which
have V@t curves which are derived into my known load. Unfortunately all these
other factors are extremely difficult to hold to tight tolerances. All I
was saying was that an IBIS model derived into a resistive load is probably
sufficient for most signal integrity work. 

The current crop of IBIS models are a far cry from being accurate enough 
to really predict the kinds of things Jon is talking about, but many of
them are good enough to ensure that I don't drastically mis-terminate
the transmission lines on my boards.

Another question to think about: do Ibis models derived from Spice models
really have the kind of accuracy that Jon needs?

Brock Hannibal
Design Engineer
Tektronix, Inc.

Jon Powell says,

>I must disagree with this statement. Though accurate transmission line
>characteristics are crucial for simulation, risetime and IV curve
>accuracy is also important. The IV curve vs line impedance directly
>determines the incident wave height (and thus incident switching and/or
>number of round-trips to switch) and crosstalk and overshoot are a
>function of risetime/falltime as much as line coupling and impedance.

>Brock Hannibal wrote:
>> 
>> Hi all,
>> 
>> Let me add a thought. Ed Boeckman asks:
>> 
>> "I hope someone can help me to understand how the IBIS models will
>> accurately produce the correct physical response with an arbitrary but
>> realistic loading condition, different from the test fixture, at least
>> to a level of accuracy close to that which would result from the
>> original transistor level spice model, say within 5%."
>> 
>> I've found that board level simulation accuracy is difficult to quantify
>> as a percentage number. There are a number of contributing factors such
>> as etch width and thickness variations along the length of the interconnect
>> line, cross-section variations(dielectric thickness), dielectric constant
>> variation with frequency, humidity, temperature, etc. Most FR-4 type boards
>> are themselves about 10% components. Holding the boards to a tighter tolerance
>> is both expensive and difficult.
>> 
>> It turns out that if the IBIS model is derived into a nominal resistive
>> load that is representative of the transmission line characteristic
>> impedance that the dominant effect in the simulation is usually the
>> transmission line formed by the interconnect.
>> 
>> I have verified this by actual measurement in a number of cases. This is
>> not to say that the model is irrelevant, only that the model's
>> output impedance curves and risetimes are not as critical as one might
>> think in predicting the performance of the system.
>>

From owner-ibis  Mon Oct 28 23:21:55 1996
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	Mon, 28 Oct 1996 19:01:15 PST
From: "Jin Man Han" <jmhan@hotmail.com>
To: ibis@vhdl.org
Subject: Ramp rate with 50ohm?
Content-Type: text/plain

Hi, every body. This is the first time I ask this question
to IBIS forum after I joined yesterday.

I am a memory designer and starts wondering why we have to
provide ramp rate data with "non reactive 50ohm" attached
to output buffer.
Once we provided ramp rate to a customer and he asked us to
attach 50ohm to output buffer.
Why is that? Is it so crucial?
Hope I can clarify this issue from all of you.
Thanks. 

---------------------------------------------------------
Get Your *Web-Based* Free Email at http://www.hotmail.com
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From owner-ibis  Tue Oct 29 06:34:53 1996
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Date: Tue, 29 Oct 1996 08:23:10 -0600
From: schumach@flare.convex.com (Richard A. Schumacher)
Message-Id: <199610291423.IAA00293@flare.convex.com>
To: brockh@mdhost.cse.tek.com, uunet!qdt.com!jonp@uunet.uu.net
Subject: Re: Rising Waveform Loading Effects
Cc: <uunet!uunet!icx.com!bob@uunet.uu.net>,
        <uunet!uunet!mdhost.cse.tek.com!brockh@uunet.uu.net>,
        Bob@mdhost.cse.tek.com, Brock@mdhost.cse.tek.com,
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        uunet!uunet!vhdl.org!ibis@uunet.uu.net


The current crop of IBIS models are a far cry from being accurate enough 
to really predict the kinds of things Jon is talking about, but many of
them are good enough to ensure that I don't drastically mis-terminate
the transmission lines on my boards.

	One almost does not need any models for that, IBIS or otherwise.
	If a simulator will not provide 200 mV and 500 psec accuracy 
	while simulating a situation complex enough to be non-intuitive
	then it's hardly worth the trouble.


Another question to think about: do Ibis models derived from Spice models
really have the kind of accuracy that Jon needs?

	I don't know. How do we know how accurate such IBIS models
	are? That uncertainty is why I'm not rushing to embrace IBIS
	as a substitute for SPICE or measurement-derived I-V curves 
	in simulation. When a vendor is willing to make direct 
	comparisions between simulations (using their own nominal 
	SPICE models, measured I-V curves and IBIS models) and 
	measurements of actual circuits, and demonstrate at least 
	200 mV/500 psec accuracy, then I'll start to have some 
	confidence. Such simulations must address realistic situations
	in multiple cases (heavy vs light loading, lumped vs 
	transmission line environments), and not merely 50 pF - 500 
	ohm test cases. Until then I'll continue to press vendors 
	for SPICE models or I-V curves, or generate my own. 


	Richard Schumacher

	I do not speak in any capacity for the Convex Division of the
	Hewlett Packard Company.

From owner-ibis  Tue Oct 29 09:04:08 1996
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Date: Tue, 29 Oct 96 08:49:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Tue, 29 Oct 96 08:53:03 PST_2@ccm.hf.intel.com>
To: ibis@vhdl.org
Subject: Re[2]: Rising Waveform Loading Effects


Text item: 

Richard,

Believe it or not, the kinds of comparisons that you are longing for are/were 
being done by vendors (at least by Intel).  When we began to use IBIS, (or our 
IBIS-like behavioral models), the first thing we wanted to know was how accurate
they are.  If they would have not provided the accuracy, we wouldn't have gone 
out to simulation vendors to see if they are willing to sign up to a new 
standard, just to embarrass ourselves...  Also, we use these in our own 
simulations.  Do you think we would fool ourselves with a bunch of bogus data 
and spend millions of dollars in making chips based on that?

I wonder how familiar you are with the IBIS modeling technique, at all.  You say
you would rather take I-V curves or SPICE models from the vendors than IBIS 
models.  Do you realize that the IBIS models you do not want to accept contain 
the same I-V curves (and more) that you are willing to take?

Arpad Muranyi
Intel Corporation 
===============================================================================

The current crop of IBIS models are a far cry from being accurate enough
to really predict the kinds of things Jon is talking about, but many of
them are good enough to ensure that I don't drastically mis-terminate
the transmission lines on my boards.

     One almost does not need any models for that, IBIS or otherwise.
     If a simulator will not provide 200 mV and 500 psec accuracy
     while simulating a situation complex enough to be non-intuitive
     then it's hardly worth the trouble.


Another question to think about: do Ibis models derived from Spice models
really have the kind of accuracy that Jon needs?

     I don't know. How do we know how accurate such IBIS models
     are? That uncertainty is why I'm not rushing to embrace IBIS
     as a substitute for SPICE or measurement-derived I-V curves
     in simulation. When a vendor is willing to make direct
     comparisions between simulations (using their own nominal
     SPICE models, measured I-V curves and IBIS models) and
     measurements of actual circuits, and demonstrate at least
     200 mV/500 psec accuracy, then I'll start to have some
     confidence. Such simulations must address realistic situations
     in multiple cases (heavy vs light loading, lumped vs
     transmission line environments), and not merely 50 pF - 500
     ohm test cases. Until then I'll continue to press vendors
     for SPICE models or I-V curves, or generate my own.


     Richard Schumacher

     I do not speak in any capacity for the Convex Division of the
     Hewlett Packard Company.

Text item: External Message Header

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Subject: Re: Rising Waveform Loading Effects
To: brockh@mdhost.cse.tek.com, uunet!qdt.com!jonp@uunet.uu.net
Message-Id: <199610291423.IAA00293@flare.convex.com>
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From owner-ibis  Tue Oct 29 10:23:28 1996
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Tue, 29 Oct 96 10:10:49 PST_13@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re: Rising Waveform Loading Effects


Text item: 

Ed,

Your concern is well taken.  However, I would like to point out that an IBIS 
model is nothing but data.  The V-t curve in the IBIS model is not supposed to 
be the same as the simulation waveforms, unless the load is identical to the 
load that was used to generate the V-t curve.  The simulator can do anything to 
this data.

What I mean by this is, that if the simulator is smart enough, it can take the 
data and modify it, derive new curves, etc.  So, if you have an I-V curve and a 
V-t curve which was generated with 50 Ohm resistive load in the model, a good 
simulator should derive a new V-t curve that matches the different load 
resistance in that particular simulation.  Taking this further, the simulator 
could make V-t curves with reactive loads also.  In general, then, the simulator
can simulate at each iteration with a different set of curves that matches any 
loading condition, even if the "load" is another non-linear I-V curve.  The 
point here is that the data in the IBIS model is not supposed to be a limiting 
factor to what the simulator does with it.

Of course this is not the only way things can be done, I was just trying to 
illustrate the concept.

The reason resistive (and not reactive or transmission line) loads are preferred
for generating V-t curves is that with a resistive load we get only what the 
buffer does.  With other types of loads we get what the load does also.  Why 
would one want to add all that to the V-t curves when it will have to be taken 
out anyway to model just the buffer alone?

Arpad Muranyi
Intel Corporation
================================================================================

Hello to all,

I am concerned about the validity of using IBIS models for general
printed circuit board signal analysis in an environment of various types
of loads, transmission lines, vias, pads, connectors, various
terminations, etc.

According to the IBIS specification V2.1 dated Dec. 13, 1995,  for a
rising waveform (for example), there are various loads specified as
L_dut, R_dut, L_fixture, R_fixture, C_dut, and C_fixture.  In addition
data is to be taken with the effects of C_comp included.  There is
however no provision for generating curves with a transmission line load
which is more typically the case, especially for high speed circuits. in
actual circuit boards.

It is well known however, that the ramp rate and levels reached will be
affected by the loads. For example, changing  the values of R_fixture
and V_fixture on a typical buffer. (The s2ibis2 program will generate
different curves for different values of R_fixture, for example IBIS
curves for  50 ohms and 100 ohms is generated from a command file that
specified curves for 50 and 100 ohms.)

My question is this:  If in an actual simulation environment we really
have a different loading condition with transmission lines , vias, etc.,
how can we legitimately use an IBIS model that was generated with a
different lumped element loading condition ?

I hope someone can help me to understand how the IBIS models will
accurately produce the correct physical response with an arbitrary but
realistic loading condition, different from the test fixture, at least
to a level of accuracy close to that which would result from the
original transistor level spice model, say within 5%.

Ed Boeckmann,  "My comments reflect solely my own opinion!"
Intergraph Corp.
Huntsville AL 35894
tel. (205)-730-6219
fax (205)-730-6000
email efboeckm@ingr.com

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Subject: unsuscribe

     please unsubscribe me from the ibis reflector. thanks

From owner-ibis  Tue Oct 29 11:01:02 1996
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Tue, 29 Oct 96 10:46:10 PST_14@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re[2]: Ramp Def. ??


Text item: 

Ahmed,

In my opinion, the IBIS spec defines the ramp rates only one way, and clearly.  
See included sections below.  Could you please point it out to me where you 
think the other definition is in the spec?

Thanks,

Arpad Muranyi
Intel Corporation

|==============================================================================
|     Keyword:  [Ramp]
|    Required:  Yes, except for inputs and terminators
| Description:  Defines the rise and fall times of a buffer.  The ramp rate
|               does not include packaging but does include the effects of the
|               C_comp parameter.
|  Sub-Params:  dV/dt_r, dV/dt_f, R_load
| Usage Rules:  The rise and fall time is defined as the time it takes the
|               output to go from 20% to 80% of its final value.
|               The ramp rate is defined as:
|
|               dV          20% to 80% voltage swing
|               -- = ----------------------------------------
|               dt   Time it takes to swing the above voltage
|
|               The ramp rate must be specified as an explicit fraction
|               and must not be reduced.  The [Ramp] values can use "NA" for
|               the min and max values only.  The R_load subparameter is
|               optional if the preferred 50 ohm load is used.  The R_load sub-
|               parameter is required if a non-standard load is used.
|==============================================================================
|
|                       NOTES ON DATA DERIVATION METHOD
|
|
| 3) Ramp Rates:
|
|    c. Due to the resistor, output swings will not make a full transition as
|       expected.  However the pertinent data can still be collected as
|       follows:
|           1)  determine the 20% to 80% voltages of the 50 ohm swing
|           2)  measure this voltage change as "dV"
|           3)  measure the amount of time required to make this swing "dt"
|



===============================================================================
Hello Bob and Stephen

     Thank you for your responses. Your answers are what I expected.
However, the IBIS specifications are not clear on that. In fact it defines
ramp rate in both ways. So we should make correction on the specifications.

Regards, Ahmed.

>>>> Bob Ross wrote:

Ahmed:

Case (b).

The 20% and 80% voltage points are 1.8 V and 4.2 V.

Best Regards,
Bob Ross
Interconnectix, Inc.

>>>> Stephen Peters wrote:

Hello Ahmed:

   It's the 20% to 80% of the voltage swing.  Specifically
the Dt number is calculated as (for rising wavefront)....

(time at which voltage waveform crosses [.8(voltage swing) +
starting voltage])  -  (time at which voltage waveform crosses
[.2(voltage swing) + starting voltage]).

         Hope that helps.

           Regards,
           Stephen Peters
           Intel Corp.

>>>> Ahmed Omer wrote:

Hello IBIS people

Is ramp rate defined as the time it takes the output to go:
(a) 20% to 80% of output final value
 or
(b) 20% to 80% of output voltage swing*

* I define voltage swing as the difference
  between final value and initial value.

For example;
Say, the output swings 1 to 5 volts.    |    5 v        ____
To calculate the ramp rate do I use     |              /
(a) 20% to 80% of 5 volts               |             /
 or                                     |            /
(b) 20% to 80% of 4 volts               |    1v ____/

Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:      512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36
 |
|Fax:      512-933-5845                   | Austin, TX 78721                   |

|____________________________________________________________________________|

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Date: Tue, 29 Oct 96 10:29:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Tue, 29 Oct 96 10:57:34 PST_4@ccm.fm.intel.com>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Re: R_Pad?


Text item: 

Scott,

I agree with Stephen Peters, that the pad resistance is included in the I-V 
curves of the pullup and/or pulldown structures.

This is similar to the resistive properties of the diodes.  A pure diode I-V 
curve is exponential, and if you plot that equation, you will see currents in 
the Giga and Tera Ampere magnitude already at 1 Volt of forward bias.  The diode
equation in text books refers to junction voltage, not terminal voltage, and 
there is a significant series resistance between the junction and the terminals.

I have seen many SPICE models that ignore the resistive properties of the ESD 
diodes, yielding such large currents at 1 Volt of over or undershoot.  So much 
for the accuracy of the SPICE models... 

Real diodes do not have such I-V curves, they usually start out exponentially, 
but then straighten out when the resistive properties begin to limit the 
current.  So, between 1 and 5 volts of forward bias (if the device lets this) 
you would get a more or less linear I-V curve with a few Ohms slope.  Just like 
we don't separate this resistance, I don't think we need to separate the pad 
resistance.  It just simply modifies the shape of the transistor I-V curves.

Also, in most cases the effect of the pad resistance is so small that I don't 
think it would be noticable by just eyeballing the curve (in contrary to the 
diode example above).  From your EMAIL, it seems to me that you might have a 
different problem, if the pad resistance seemed to make such a big difference, 
or if the subtraction made an almost 0 pulldown curve.  I would be glad to help 
you with that problem, but you would have to supply more information.  (Your 
IBIS model might have beed incorrectly done also).

I hope this helps,

Arpad Muranyi
Intel Corporation
================================================================================

Hello Scott, and fellow IBISains:

    If I recall past conversations correctly, resistance
between the pad and the active xsistors has been accounted
for by including it's effects in the pullup and pullown curves.
At least, that is how I have done models before.  I'm
curious however -- do you see a reason why this resistance
should be called out seperatly?  It's a good question....

                    Regards,
                    Stephen Peters
                    Intel Corp.



Hello IBIS folk,

I'm participating in my companies initial developement stages of
generating IBIS files, and currently we are simultaniously
investigating generating them from both actual silicon, as well
as from spice netlists.  Were new to this email list, so
please excuse us if this has been discussed:

I have searched all of the documents that I could find, including
searching through the email archives, but we are still having
trouble answering this one question:  How do we deal with a
Pad resistance (CMOS)... R_comp would have been perfect for this.  It
seems that those who asked about R_comp in the past were told
to figure it into the R_package (or R_pin).  However, when the data
is collected from real silicon without the package (using a tester's
probe leads directly on the die's I/O pads), any resistance between the
I/O pad and the I/O buffer circuitry gets included...  So
the test yeilds Pull-up and Pull-down data that includes an effective
R_comp.  For those who have designs with a built-in resistance between
your pad and your I/O circuitry, how did you deal with this since the
specs don't allow for R_comp, and including this resistance in the
R_package is (seems) impossible?

The thing that flagged us to this problem was that our Pull-down curve
(after subtracting the Power-clamp diode data from the initial pull-down
data) gets brought down to close to 0 current when there's about a diode
voltage above Vcc on the pin  (in our initial SPICE testing where we
included a resistance between the I/O circuitry and the Pad).

Thanks in advance,
-Scott Schlachter
 Actel Corporation
 Sunnyvale, CA

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From: Stephen Peters <speters@ichips.intel.com>
Date: Wed, 23 Oct 1996 09:43:04 -0700
Subject: R_Pad?
To: ibis@vhdl.org, ibis-users@vhdl.org
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Tue, 29 Oct 96 11:05:42 PST_9@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re: Low and high output level


Text item: 

Real,

I must disagree with your statement that real parts will not switch to Vcc or 
GND.  In the CMOS world all it takes is time.  Given enough time, the capacitive
inputs will be fully charged or discharged, i.e. the voltage will be Vcc or GND.

You are right if you are talking about bipolar devices, since there is some 
amount of current flowing, which will load the output of the driver.

So, before going on, you must answer two questions:  Are you simulating with 
CMOS models, and how long did you run your simulation?

Arpad Muranyi
Intel Corporation
============================================================================


Hi,

  I just started to do some simulations (with SigNoise) using a manufacturer's
model. My design is very simple : a driver connected to 3 receivers
(the part is
an ABT buffer). I noticed that the signal reach a perfect 5v for the rising
waveform and reach a perfect 0v for the falling waveform. This Ibis model came
from a convertion (s2ibis). Is it because the internal input of the
output buffer
has been set to 0 and vcc during the convertion (in the header file).

  No real part will switch to a completly on(vcc) or completly off(0v)
state, so
the shouldn't switch to these levels. How can i deal with that? For those who
already make simulations, have you ever meet this situation?

Thanks,
Real Mongrain Jr.

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please unsubscribe me from the ibis reflector. thanks

From owner-ibis  Tue Oct 29 12:42:49 1996
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Date: Tue, 29 Oct 1996 12:24:47 -0800
To: ibis@vhdl.org
From: Kellee Crisafulli <kellee@hyperlynx.com>
Subject: IBIS as the accurate standard.

There has been a number of emails of late about how accurate
the IBIS models.  I think some of this discussion really looses
site of the FACTS.

  1) No model is "accurate" for all uses especially SPICE models.

  2) IBIS models are better than SPICE models in almost all
     respects associated with signal integrity analysis tools
     because:
      a) The model is a standard with agreed upoun rules unlike
         the 40+ different flavors of SPICE.
      b) The model is transportable as a public standard because
         it does not give away confidential design information.
      c) The models are generally plenty accurate given the
         tolerances of everything else in the system.  e.g.
         PCB tolerences, IC process tolerence, power supply,
         etc..  Do we really need 5% accuracy when the
         IC varies by factors of 2 in some cases.  The PCB's
         alone can make impedance changes of 10% or more.

 3) IBIS models can be made from measured data or translated
    from SPICE model data.  This makes them much more flexibly
    constructed then SPICE models.

BOTTOM LINE:
IBIS models are accurate enough for today's signal integrity
needs in 99% of the cases.

best wishes to all,
Kellee


---------------------------------------------------------------
Have a great day...Kellee Crisafulli, HyperLynx Inc.
---------------------------------------------------------------



From owner-ibis  Tue Oct 29 11:14:14 1996
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To: ibis-users@vhdl.org, ibis@vhdl.org
Subject: Re: Bird 35.2


Text item: 

Chris,


Probably not.  I have thought about modeling it with the V-t curves also.  I am 
frugal also, so I wouldn't want to add new syntax if we don't have to...

I was talking about two different features.  One of them would probably need 
that BIRD, but the other one might need something other than BIRD35.  I am not 
sure though, since I have not spent too much time on this yet.

For the time being, I am just following the conversation.

Arpad
================================================================================


Arpad,

In support of Dileep's comments, is it possible to model the
multi-stage effect with V-T curves?  In other words, if we
already have a technique for capturing the significant effects
of multi-stage drivers we should not add another method to do
the same thing.

I don't know the answer to this question, but I would like
to see a demonstration of the correct answer one way or another.
If Ibis can't model these drivers then we do need a technique
to handle them.

Chris Reid

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From owner-ibis  Tue Oct 29 14:26:33 1996
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
Message-Id: <9610292159.AA19630@contec13.contec.COM>
To: ibis@vhdl.org
Subject: Re: Rising Waveform Loading Effects
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII


Arpad Muranyi, Intel Corporation wrote:
 
> What I mean by this is, that if the simulator is smart enough, it can take the 
> data and modify it, derive new curves, etc.  So, if you have an I-V curve and a 
> V-t curve which was generated with 50 Ohm resistive load in the model, a good 
> simulator should derive a new V-t curve that matches the different load 
> resistance in that particular simulation.  Taking this further, the simulator 
> could make V-t curves with reactive loads also.  In general, then, the simulator
> can simulate at each iteration with a different set of curves that matches any 
> loading condition, even if the "load" is another non-linear I-V curve.  The 
> point here is that the data in the IBIS model is not supposed to be a limiting 
> factor to what the simulator does with it.

This is not quite true. Simulator cannot CREATE additional information.
If V-t data is given only for one resistive load, how can the simulator
create V-t data for arbitrary loading conditions? To illustrate the point,
let us assume that the so called "load" can be described by only one
independent variable. (In real life, it is an n-dimensional problem.)
Let us assume that the dependent entity is the V-t curve. Thus, in this
hypothetical two dimension space, the ibis specification gives one data
point. From this single data point, there is no way to produce a straight
line, or at least there is no UNIQUE way. If the ibis specification were
to give two data points, then one can say that the simulator should be
smart enough to fit a straight line thru these two points and then
interpolate and extrapolate(although extrapolation is dangerous in many
situations).
[In practice, ibis specification has room to provide V-t curves for
multiple loads, but the simulator is still limited by the information
provided in the ibis model. It cannot CREATE V-t curves for the
general n-dimensional case. The simulator may be able to do this if it
makes certain assumptions, but since these assumptions are not specified
in the ibis model, the simulation results will be unpredictable (and even
unreliable).]

------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------


From owner-ibis  Tue Oct 29 14:39:37 1996
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
Message-Id: <9610292211.AA19636@contec13.contec.COM>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Re: R_Pad?
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII

Arpad Muranyi, Intel Corporation wrote:
 
> I have seen many SPICE models that ignore the resistive properties of the ESD 
> diodes, yielding such large currents at 1 Volt of over or undershoot.  So much 
> for the accuracy of the SPICE models... 
> 

Please do not get confused between the model EQUATIONS and model PARAMETERS.
SPICE diode model equations have the provision for specifying the parasitic
resistance. Of course, if it is not specified in the model PARAMETERS,
it can produce large currents. IBIS models will exhibit similar unrealistic
behavior if the parasitic resistance is not taken into account while
making the ibis model from simulations. It is always possible to use a very
good model improperly to produce unrealistic results. SPICE is not to be
blamed for that.

------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

From owner-ibis  Tue Oct 29 15:42:35 1996
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From: idodd@ian.edaco.ingr.com (Ian Dodd)
Message-Id: <9610292330.AA03438@ian.edaco.ingr.com>
To: ibis@vhdl.org
Subject: RE: Rising Waveform Loading Effects

Dileep,
	I am afraid I side with Arpad, the Rising waveform curves define how the 
driver gets from one specified point on the logic low I/V curve to a 
specified point on the high I/V curve. 

	In transmission line simulation we want to know how the driver will
go from a  point on the logic low I/V curve defined by our loading to a point on
the logic high I/V curve defined by our loading. 
If the first IV points and the ones that we want to use for our loading conditions
are not too far apart, it seems reasonable to assume that
the curve between the two points we want is very similar in shape to that connecting
the two points on the Rising curve. An algorithm based on this observation should give
predictable and reliable results.

						Ian Dodd
						Veribest Inc
						idodd@veribest.com  

----- Begin Included Message -----

From owner-ibis@vhdl.vhdl.org Tue Oct 29 15:57:00 1996
From: dileep@contec.Apsimtech.COM (Dileep Divekar)
To: ibis@vhdl.org
Subject: Re: Rising Waveform Loading Effects
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII
Content-Length: 2417
X-Lines: 46


Arpad Muranyi, Intel Corporation wrote:
 
> What I mean by this is, that if the simulator is smart enough, it can take the 
> data and modify it, derive new curves, etc.  So, if you have an I-V curve and a 
> V-t curve which was generated with 50 Ohm resistive load in the model, a good 
> simulator should derive a new V-t curve that matches the different load 
> resistance in that particular simulation.  Taking this further, the simulator 
> could make V-t curves with reactive loads also.  In general, then, the simulator
> can simulate at each iteration with a different set of curves that matches any 
> loading condition, even if the "load" is another non-linear I-V curve.  The 
> point here is that the data in the IBIS model is not supposed to be a limiting 
> factor to what the simulator does with it.

This is not quite true. Simulator cannot CREATE additional information.
If V-t data is given only for one resistive load, how can the simulator
create V-t data for arbitrary loading conditions? To illustrate the point,
let us assume that the so called "load" can be described by only one
independent variable. (In real life, it is an n-dimensional problem.)
Let us assume that the dependent entity is the V-t curve. Thus, in this
hypothetical two dimension space, the ibis specification gives one data
point. From this single data point, there is no way to produce a straight
line, or at least there is no UNIQUE way. If the ibis specification were
to give two data points, then one can say that the simulator should be
smart enough to fit a straight line thru these two points and then
interpolate and extrapolate(although extrapolation is dangerous in many
situations).
[In practice, ibis specification has room to provide V-t curves for
multiple loads, but the simulator is still limited by the information
provided in the ibis model. It cannot CREATE V-t curves for the
general n-dimensional case. The simulator may be able to do this if it
makes certain assumptions, but since these assumptions are not specified
in the ibis model, the simulation results will be unpredictable (and even
unreliable).]

------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------



----- End Included Message -----


From owner-ibis  Tue Oct 29 15:51:01 1996
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Organization: Quad Design Technology
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To: Dileep Divekar <uunet!contec.Apsimtech.COM!dileep@uunet.uu.net>
Cc: ibis@vhdl.org
Subject: Re: Rising Waveform Loading Effects
References: <9610292159.AA19630@contec13.contec.COM>
Content-Type: text/plain; charset=us-ascii
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Dileep,

There are a few "dimensions" of knowledge not explicity present in the
.ibs model which may be useful to a simulator:

   - Nearly all digital drivers can be catagorized into one
     of a few unique output stages groups whose behavior
     can been studied in depth.

   - Transistors are well defined devices whose behavior 
     has been studied for decades.

*** Simulator modeling algorithms are not trivial.

Given DC vi curves for high/low states and predetermined resistively
loaded waveforms as required by simulator, waveform prediction into
arbitrary loads is possible, proven and extremely reliable for
board-level analysis.

-Chris Rokusek
Quad Deisgn Technology


Dileep Divekar wrote:
> 
> Arpad Muranyi, Intel Corporation wrote:
> 
> > What I mean by this is, that if the simulator is smart enough, it can take the
> > data and modify it, derive new curves, etc.  So, if you have an I-V curve and a
> > V-t curve which was generated with 50 Ohm resistive load in the model, a good
> > simulator should derive a new V-t curve that matches the different load
> > resistance in that particular simulation.  Taking this further, the simulator
> > could make V-t curves with reactive loads also.  In general, then, the simulator
> > can simulate at each iteration with a different set of curves that matches any
> > loading condition, even if the "load" is another non-linear I-V curve.  The
> > point here is that the data in the IBIS model is not supposed to be a limiting
> > factor to what the simulator does with it.
> 
> This is not quite true. Simulator cannot CREATE additional information.
> If V-t data is given only for one resistive load, how can the simulator
> create V-t data for arbitrary loading conditions? To illustrate the point,
> let us assume that the so called "load" can be described by only one
> independent variable. (In real life, it is an n-dimensional problem.)
> Let us assume that the dependent entity is the V-t curve. Thus, in this
> hypothetical two dimension space, the ibis specification gives one data
> point. From this single data point, there is no way to produce a straight
> line, or at least there is no UNIQUE way. If the ibis specification were
> to give two data points, then one can say that the simulator should be
> smart enough to fit a straight line thru these two points and then
> interpolate and extrapolate(although extrapolation is dangerous in many
> situations).
> [In practice, ibis specification has room to provide V-t curves for
> multiple loads, but the simulator is still limited by the information
> provided in the ibis model. It cannot CREATE V-t curves for the
> general n-dimensional case. The simulator may be able to do this if it
> makes certain assumptions, but since these assumptions are not specified
> in the ibis model, the simulation results will be unpredictable (and even
> unreliable).]
> 
> ------------------------------------------------------------
> Dileep Divekar
> Applied Simulation Technology, Inc.
> 2188 Bering Drive
> San Jose, CA 95131
> 
> Phone - (408)-434-0967 x 100
> Fax   - (408)-434-1003
> Email - dileep@apsimtech.com
> ------------------------------------------------------------

From owner-ibis  Tue Oct 29 17:48:51 1996
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From: scotts@actel.com (Scott Schlachter)
Message-Id: <9610300138.AA06967@ricky.sun_net>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Re: R_Pad?
Cc: dileep@contec.Apsimtech.COM

Dileep and Arpad:

HSPICE will model the inherent CMOS diodes (D to Bulk) within the transistor 
model.  From what I can tell, there seems to be a fallback to this specification
of the model:  the diode saturation current equations do not appear to have
any way to include any parasitic resistance whatsoever.  I believe that you both 
have valid points here.  HSPICE can model the diode correctly, but it seems 
that the only way is to extract it from the said transistors, and model it 
seperately - a definate unexpected extra step.  When modeled this way, there 
is no problem assigning the appropriate parasitic impedances associated with 
the diodes.  However, in trying to keep the power and ground clamp diodes as 
being inherently modeled within the pull-up and pull-down transistors, there
seems to be a flaw with the HSPICE model.  Perhaps there is something that I'm 
overlooking with this, and if anyone knows how to deal with this in the
HSPICE transistor models, please respond.  Thanks,
-Scott Schlachter
 Actel Corporation 

 
> Arpad Muranyi, Intel Corporation wrote:
>  
> > I have seen many SPICE models that ignore the resistive properties of the ESD 
> > diodes, yielding such large currents at 1 Volt of over or undershoot.  So much 
> > for the accuracy of the SPICE models... 
> > 
> 
> Please do not get confused between the model EQUATIONS and model PARAMETERS.
> SPICE diode model equations have the provision for specifying the parasitic
> resistance. Of course, if it is not specified in the model PARAMETERS,
> it can produce large currents. IBIS models will exhibit similar unrealistic
> behavior if the parasitic resistance is not taken into account while
> making the ibis model from simulations. It is always possible to use a very
> good model improperly to produce unrealistic results. SPICE is not to be
> blamed for that.
> 
> ------------------------------------------------------------
> Dileep Divekar
> Applied Simulation Technology, Inc.
> 2188 Bering Drive
> San Jose, CA 95131
> 
> Phone - (408)-434-0967 x 100
> Fax   - (408)-434-1003
> Email - dileep@apsimtech.com
> ------------------------------------------------------------
> 

From owner-ibis  Tue Oct 29 18:18:33 1996
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
Message-Id: <9610292237.AA19642@contec13.contec.COM>
To: ibis@vhdl.org
Subject: Re: IBIS as the accurate standard.
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII

Kellee Crisafulli, HyperLynx Inc. wrote:
 
> There has been a number of emails of late about how accurate
> the IBIS models.  I think some of this discussion really looses
> site of the FACTS.
> 
>   1) No model is "accurate" for all uses especially SPICE models.
> 

Where is the FACT in the above statement? It is more like an opinion
and everyone is entitled to have one. I do not see why SPICE
models should be ESPECIALLY less "accurate". Is it possible to
prove the above statement? I agree with the first half of the statement
that no model is accurate for all uses and both ibis and spice models
have that limitation.

I think it is possible to say good things about IBIS without
saying bad things about SPICE. Why should it always be necessary
to defend IBIS by bad mouthing SPICE? Both serve different but
useful purposes.

------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

From owner-ibis  Wed Oct 30 08:12:40 1996
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From: omera@trailblazer.sps.mot.com (Ahmed Omer)
Message-Id: <9610301602.AA21680@trailblazer.aisl.aus>
To: ibis@vhdl.org
Subject: Re: Re[2]: Ramp Def. ??
X-Sun-Charset: US-ASCII

Hello Arpad,

Look at the two phrases marked with  ***<...>*** in the Usage Rules.
These are (a) and (b) in my original question.


| Usage Rules:  The rise and fall time is defined as the time it takes the
|               output to go from ***< 20% to 80% of its final value.>***
|               The ramp rate is defined as:
|
|               dV        ***< 20% to 80% voltage swing >***
|               -- = ----------------------------------------
|               dt   Time it takes to swing the above voltage
|
  
Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
|Fax:	 512-933-5845                   | Austin, TX 78721                   |
|---------------------------------------+------------------------------------|

From owner-ibis  Wed Oct 30 08:42:00 1996
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 30 Oct 96 08:29:17 PST_8@ccm.fm.intel.com>
To: ibis@vhdl.org, ibis-users@vhdl.org
cc: dileep@contec.Apsimtech.COM
Subject: Re[2]: R_Pad?


Text item: 

Scott,

There is no need to take out the parasitic diodes from the MOSFETs in order to 
model them correctly (i.e. to include their resistiveness).  You are right, that
the current equation itself does not include the resistance, but there is no 
need for it.  (If you included the resistance in the diode equation, you would 
end up with a transcendental equation which is a tough one to work with).

If you have access to an HSPICE manual, look up the RD, RDC, RS, RSC, etc. 
parameters.  Don't let yourself get confused that these are Drain and Source 
resistance numbers; the currents of parasitic diodes go through Drain, Source, 
and Bulk.  Notice that these resistances all default to zero.  This means that 
if someone doesn't specify them explicitly, there will be no resistive 
parasitics in the model.  (Which happens way to often, unfortunately).

Arpad
===============================================================================

Dileep and Arpad:

HSPICE will model the inherent CMOS diodes (D to Bulk) within the transistor
model.  From what I can tell, there seems to be a fallback to this
specification
of the model:  the diode saturation current equations do not appear to have
any way to include any parasitic resistance whatsoever.  I believe
that you both
have valid points here.  HSPICE can model the diode correctly, but it seems
that the only way is to extract it from the said transistors, and model it
seperately - a definate unexpected extra step.  When modeled this way, there
is no problem assigning the appropriate parasitic impedances associated with
the diodes.  However, in trying to keep the power and ground clamp diodes as
being inherently modeled within the pull-up and pull-down transistors, there
seems to be a flaw with the HSPICE model.  Perhaps there is something that I'm
overlooking with this, and if anyone knows how to deal with this in the
HSPICE transistor models, please respond.  Thanks,
-Scott Schlachter
 Actel Corporation


> Arpad Muranyi, Intel Corporation wrote:
>
> > I have seen many SPICE models that ignore the resistive properties
of the ESD
> > diodes, yielding such large currents at 1 Volt of over or undershoot.
 So much
> > for the accuracy of the SPICE models...
> >
>
> Please do not get confused between the model EQUATIONS and model PARAMETERS.
> SPICE diode model equations have the provision for specifying the parasitic
> resistance. Of course, if it is not specified in the model PARAMETERS,
> it can produce large currents. IBIS models will exhibit similar unrealistic
> behavior if the parasitic resistance is not taken into account while
> making the ibis model from simulations. It is always possible to use a very
> good model improperly to produce unrealistic results. SPICE is not to be
> blamed for that.
>
> ------------------------------------------------------------
> Dileep Divekar
> Applied Simulation Technology, Inc.
> 2188 Bering Drive
> San Jose, CA 95131
>
> Phone - (408)-434-0967 x 100
> Fax   - (408)-434-1003
> Email - dileep@apsimtech.com
> ------------------------------------------------------------
>

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Subject: Re: R_Pad?
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
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To: ibis@vhdl.org
Subject: RE: Rising Waveform Loading Effects
Cc: dileep@contec.Apsimtech.COM
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Ian,
I agree with your statement about I-V curves.
I was talking avout the V-t tables.
Dileep


From owner-ibis  Wed Oct 30 08:53:35 1996
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
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To: ibis@vhdl.org
Subject: Re: Rising Waveform Loading Effects
Cc: dileep@contec.Apsimtech.COM
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Chris Rokusek, Quad Deisgn Technology wrote:
>
>There are a few "dimensions" of knowledge not explicity present in the
>.ibs model which may be useful to a simulator:

That is precisely my point. You are making certain assumptions and guesses,
which are OUTSIDE the ibis specification. In fact you are trying to guess
the information which ibis is trying to hide. What do you do if you encounter
some data which does not fit any of your guesses?

All the knowledge "dimensions" should be utilized in developing the specification,
but once the specification is developed, it should have any loose ends.

Let us assume that you have a simulator which can predict waveforms for any
arbitrary load, given ONE waveform for one RESISTIVE load. But the ibis
specification does not specify that. A model developer can specify a waveform
into a general RLC load (as shown in the example on page 19 of 2.1 specification)
and claim that they have provided a perfectly legal ibis model and now it is
up to the simulator to do the rest. What does
the simulator do in this case with the waveform with all the ringing, overshoot,
undershoot etc.? The simulator should not place restrictions in ADDITION to
the ibis specification. Therefore, if one waveform into one resistive load
is all that is required, then it should be stated explicitly. Otherwise
different people can make different assumptions and guesses. If certain things
are REQUIRED to carry out a simulation, then the ibis model should SPECIFY
those things instead of leaving them to guesswork.
------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------


From owner-ibis  Wed Oct 30 08:55:55 1996
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Date: Wed, 30 Oct 96 08:35:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 30 Oct 96 08:43:16 PST_6@ccm.fm.intel.com>
To: ibis@vhdl.org
cc: dileep@contec.Apsimtech.COM
Subject: Re[2]: IBIS as the accurate standard.


Text item: 

To all,

I coulnd't agree more with Dileep's last sentence (below).  The problem I see is
that a lot of people want to use IBIS models for the wrong reason.  For example,
if you are a circuit designer working on your new buffer, you are much better 
off using SPICE.  However, even if you are a circuit desginer, but you are 
concerned about the system behavior of your buffer, you might benefit from many 
the features in IBIS (and/or behavioral) models.

Another observation.  Many people automatically think that SPICE is inherently 
more accurate than IBIS.  This is a misbelief.  Any model is only as good as the
data is in it.  It is just as easy to make bad SPICE models as IBIS models.  Yet
many tend to believe SPCIE more, just because it is SPICE.  That is what bothers
me the most...

Arpad Muranyi
Intel Corporation
================================================================================

Kellee Crisafulli, HyperLynx Inc. wrote:

> There has been a number of emails of late about how accurate
> the IBIS models.  I think some of this discussion really looses
> site of the FACTS.
>
>   1) No model is "accurate" for all uses especially SPICE models.
>

Where is the FACT in the above statement? It is more like an opinion
and everyone is entitled to have one. I do not see why SPICE
models should be ESPECIALLY less "accurate". Is it possible to
prove the above statement? I agree with the first half of the statement
that no model is accurate for all uses and both ibis and spice models
have that limitation.

I think it is possible to say good things about IBIS without
saying bad things about SPICE. Why should it always be necessary
to defend IBIS by bad mouthing SPICE? Both serve different but
useful purposes.

------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

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Cc: dileep@contec.Apsimtech.COM
Subject: Re: IBIS as the accurate standard.
To: ibis@vhdl.org
Message-Id: <9610292237.AA19642@contec13.contec.COM>
From: dileep@contec.Apsimtech.COM (Dileep Divekar)
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 30 Oct 96 09:02:56 PST_16@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re[4]: Ramp Def. ??


Text item: 

Ahmed,

I see your point.

I guess, the question is what do you think is the final value.  When we wrote 
this, we were thinking about the final value under the given test conditions, 
which was defined to be a 50 Ohm resistive load.  Therefore, the final value is 
not a rail-to-rail swing, because the resistor won't let that happen.

Consider a rising edge measurement (for a CMOS device).  Before the pullup 
begins to drive, the voltage on the output is at GND, because the load resistor 
is also connected to GND, so there is no current flowing in the loop.  So the 
starting voltage of the swing is 0 V.  When the pullup is done switching, you 
get a voltage division across the pullup and the load resistor.  This is your 
final value after the transition.  Considering the 0 V starting voltage, this 
number is also equal to the swing.

I quess, this could have been written up a little more clearly, but we are 
engineers, not lawyers.  And so far I didn't hear that any one else was confused
by this.

I hope this helps,

Arpad Muranyi
Intel Corporation
================================================================================


Hello Arpad,

Look at the two phrases marked with  ***<...>*** in the Usage Rules.
These are (a) and (b) in my original question.


| Usage Rules:  The rise and fall time is defined as the time it takes the
|               output to go from ***< 20% to 80% of its final value.>***
|               The ramp rate is defined as:
|
|               dV        ***< 20% to 80% voltage swing >***
|               -- = ----------------------------------------
|               dt   Time it takes to swing the above voltage
|

Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:      512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36
 |
|Fax:      512-933-5845                   | Austin, TX 78721                   |

|---------------------------------------+------------------------------------|

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Subject: Re: Re[2]: Ramp Def. ??
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From: dileep@contec.Apsimtech.COM (Dileep Divekar)
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To: ibis@vhdl.org
Subject: Re[2]: IBIS as the accurate standard.
Cc: dileep@contec.Apsimtech.COM
X-Sun-Charset: US-ASCII

Arpad Muranyi, Intel Corporation wrote:

>Another observation.  Many people automatically think that SPICE is inherently 
>more accurate than IBIS.  This is a misbelief.  Any model is only as good as the
>data is in it.  It is just as easy to make bad SPICE models as IBIS models.  Yet
>many tend to believe SPCIE more, just because it is SPICE.  That is what bothers
>me the most...

I agree with the above statement. But by the same token one should not make the
mistake of always ASSUMING that IBIS models are better just because they are IBIS.
Any model needs to be looked at in the right perspective.
------------------------------------------------------------
Dileep Divekar
Applied Simulation Technology, Inc.
2188 Bering Drive
San Jose, CA 95131

Phone - (408)-434-0967 x 100
Fax   - (408)-434-1003
Email - dileep@apsimtech.com
------------------------------------------------------------

From owner-ibis  Wed Oct 30 11:45:07 1996
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From: scotts@actel.com (Scott Schlachter)
Message-Id: <9610301935.AA07114@ricky.sun_net>
To: ibis@vhdl.org
Subject: Question to IBIS Reflector

IBIS folk:

	I am curious how one does rise and fall time measurements
using packaged parts. The spec calls for these ramps to be measured
on I/Os with no loading, but this implies wafer-level measurements
which are less than ideal from a noise standpoint. One can use a
high-impedance probe on packaged parts but then one gets a few pF
and a few nH of LC network. In programmable logic it is almost
imperative that a tester be used, as the I/Os must be programmed
into their appropriate modes.

	My guess is that this will cause little effect on the
rise and fall times, but is this correct? Is this something that
really must be SPICEd?
 

From owner-ibis  Wed Oct 30 12:30:16 1996
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From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9610302020.AA18730@rockie.nsc.com>
To: ibis@vhdl.org, scotts@actel.com
Subject: Re: Question to IBIS Reflector

Scott:

From a bench measurement point of view, it's almost impossible to
measure rise/fall on a die(wafer). Measuring Rise/Fall on a packaged device
takes into account the C_comp effect as well.

I believe this parameter measurements were defined by SPICE users where it's easy
to isolate package effects. 

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@vhdl.vhdl.org Wed Oct 30 11:42:53 1996
> Date: Wed, 30 Oct 96 12:35:14 PPE
> From: scotts@actel.com (Scott Schlachter)
> To: ibis@vhdl.org
> Subject: Question to IBIS Reflector
> Content-Length: 641
> 
> IBIS folk:
> 
> 	I am curious how one does rise and fall time measurements
> using packaged parts. The spec calls for these ramps to be measured
> on I/Os with no loading, but this implies wafer-level measurements
> which are less than ideal from a noise standpoint. One can use a
> high-impedance probe on packaged parts but then one gets a few pF
> and a few nH of LC network. In programmable logic it is almost
> imperative that a tester be used, as the I/Os must be programmed
> into their appropriate modes.
> 
> 	My guess is that this will cause little effect on the
> rise and fall times, but is this correct? Is this something that
> really must be SPICEd?
>  
> 

From owner-ibis  Wed Oct 30 12:49:22 1996
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From: "Douglas W. Stout (446-6232)" <DSTOUT@BTVLABVM.VNET.IBM.COM>
To: IBIS@vhdl.org
Subject: unsubscribe

please unsubscribe me from the ibis reflector. thanks


From owner-ibis  Wed Oct 30 13:20:08 1996
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Date: Wed, 30 Oct 96 13:02:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 30 Oct 96 13:07:20 PST_1@ccm.fm.intel.com>
To: ibis@vhdl.org, scotts@actel.com
Subject: Re[2]: Question to IBIS Reflector


Text item: 

Scott,

They way you do this is like optimization.  You do your measurements on the 
device (in the package) and then you make an IBIS model for it (including 
package).  Then you tweek the IBIS rise and fall time parameters untill the 
simulated rise and fall times at the output of the package match the 
measuremets.

Arpad Muranyi
Intel Corporation
=========================================================================

Scott:

From a bench measurement point of view, it's almost impossible to
measure rise/fall on a die(wafer). Measuring Rise/Fall on a packaged device
takes into account the C_comp effect as well.

I believe this parameter measurements were defined by SPICE users
where it's easy
to isolate package effects.

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@vhdl.vhdl.org Wed Oct 30 11:42:53 1996
> Date: Wed, 30 Oct 96 12:35:14 PPE
> From: scotts@actel.com (Scott Schlachter)
> To: ibis@vhdl.org
> Subject: Question to IBIS Reflector
> Content-Length: 641
>
> IBIS folk:
>
>      I am curious how one does rise and fall time measurements
> using packaged parts. The spec calls for these ramps to be measured
> on I/Os with no loading, but this implies wafer-level measurements
> which are less than ideal from a noise standpoint. One can use a
> high-impedance probe on packaged parts but then one gets a few pF
> and a few nH of LC network. In programmable logic it is almost
> imperative that a tester be used, as the I/Os must be programmed
> into their appropriate modes.
>
>      My guess is that this will cause little effect on the
> rise and fall times, but is this correct? Is this something that
> really must be SPICEd?
>
>

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Subject: Re: Question to IBIS Reflector
To: ibis@vhdl.org, scotts@actel.com
Message-Id: <9610302020.AA18730@rockie.nsc.com>
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From owner-ibis  Wed Oct 30 13:20:32 1996
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From: Chris Rokusek <crokusek@qdt.com>
To: ibis@vhdl.org
Subject: Egg10 Implementation

Hi All,

I've got a working version of ibischk2 that compares AC waveform
endpoint voltages against the (DC) VI curves and the correspond test
fixture.

I need to define a tolerance of some sort to which the voltages agree.
This relates to prior discussion of how long a waveform needs to
settle.  The spec does not provide a tolerence...


     Keywords:     [Rising Waveform], [Falling Waveform]
     .
     .
     .
                   A waveform table must include the entire waveform;
                   i.e., the first entry (or entries) in a voltage column
                   must be the DC voltage of the output before switching
                   and the last entry (or entries) of the column must be
                   the final DC value of the output after switching.



I think we need to define a % voltage that the first/last entries must
lie within (e.g. 2.0%).  

Percent of what, though?  Well, how about percent of 0% to 100% of the
waveform endpoint voltages difference itself.  This would require a
highly loaded waveform to settle to a more absolute voltage since it
would have a smaller voltage swing.  Is this a good thing? 


Also, this is easy to implement!! :)


Example Waveform:

   Begins: (0ns, 0.0V)
   Ends:   (9ns, 4.0V)
   Load:   50 Ohms, 0.0V
   

For 2% agreement, the v_tolerance = 2% * (4.0 - 0) = .08V

  So model passes if...

      -0.08 < v_dc_low_for_load < 0.08   

               AND

       3.92 < v_dc_high_for_load < 4.28


Is this reasonable?

-Chris R.



From owner-ibis  Wed Oct 30 16:16:08 1996
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Message-Id: <m0vIkdm-000GjSC@icx.com>
Date: Wed, 30 Oct 96 16:05 PST
From: bob@icx.com ( Bob Ross)
To: crokusek@qdt.com, ibis@vhdl.org
Subject: Re:  Egg10 Implementation

Chris:

I think your assumptions are good.  Holding the endpoints to within 2% of the
difference between seems accurate enough for most cases.  The check may
fail with very heavily loaded devices.  However, we cannot be perfect for
all cases.  Will the percentage be adjustable?

Bob Ross
Interconnectix, Inc.




> I think we need to define a % voltage that the first/last entries must
> lie within (e.g. 2.0%).  

> Percent of what, though?  Well, how about percent of 0% to 100% of the
> waveform endpoint voltages difference itself.  This would require a
> highly loaded waveform to settle to a more absolute voltage since it
> would have a smaller voltage swing.  Is this a good thing? 


> Also, this is easy to implement!! :)


> Example Waveform:

>    Begins: (0ns, 0.0V)
>    Ends:   (9ns, 4.0V)
>    Load:   50 Ohms, 0.0V
>    

> For 2% agreement, the v_tolerance = 2% * (4.0 - 0) = .08V

>   So model passes if...

>       -0.08 < v_dc_low_for_load < 0.08   

>                AND

>        3.92 < v_dc_high_for_load < 4.28


> Is this reasonable?

> -Chris R.





From owner-ibis  Thu Oct 31 07:23:16 1996
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Date: Thu, 31 Oct 1996 09:10:01 -0600
From: omera@trailblazer.sps.mot.com (Ahmed Omer)
Message-Id: <9610311510.AA24827@trailblazer.aisl.aus>
To: ibis@vhdl.org
Subject: Re: Re[4]: Ramp Def. ??
X-Sun-Charset: US-ASCII

Hello Arpad;
 
In your last note on this subject you wrote:

" I quess, this could have been written up a little more clearly, but we are 
engineers, not lawyers.  And so far I didn't hear that any one else was 
confused by this."

I do not understand! What point or points are you making with that paragraph?

Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:	 512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36 |
|Fax:	 512-933-5845                   | Austin, TX 78721                   |
|---------------------------------------+------------------------------------|

From owner-ibis  Thu Oct 31 10:15:22 1996
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From: "C. Kumar" <cpk@cadence.com>
Message-Id: <199610311804.NAA21817@hot>
To: ibis@vhdl.org, crokusek@qdt.com
Subject: Re: Egg10 Implementation
X-Sun-Charset: US-ASCII

That is a relative check. I have seen models which do not settle to anything anything near the dc voltage. I mean the dc voltage defined by the VI table. (it should be the true dc , isn't it?). I think it is necessary explicitly clarify whether you are talking about dc voltage or steady state settling voltage.

> From owner-ibis@vhdl.vhdl.org Wed Oct 30 16:17 EST 1996
> Received-Date: Wed, 30 Oct 1996 16:17:17 -0500
> From: Chris Rokusek <crokusek@qdt.com>
> To: ibis@vhdl.org
> Subject: Egg10 Implementation
> Content-Type: text
> Content-Length: 1505
> X-Lines: 58
> 
> Hi All,
> 
> I've got a working version of ibischk2 that compares AC waveform
> endpoint voltages against the (DC) VI curves and the correspond test
> fixture.
> 
> I need to define a tolerance of some sort to which the voltages agree.
> This relates to prior discussion of how long a waveform needs to
> settle.  The spec does not provide a tolerence...
> 
> 
>      Keywords:     [Rising Waveform], [Falling Waveform]
>      .
>      .
>      .
>                    A waveform table must include the entire waveform;
>                    i.e., the first entry (or entries) in a voltage column
>                    must be the DC voltage of the output before switching
>                    and the last entry (or entries) of the column must be
>                    the final DC value of the output after switching.
> 
> 
> 
> I think we need to define a % voltage that the first/last entries must
> lie within (e.g. 2.0%).  
> 
> Percent of what, though?  Well, how about percent of 0% to 100% of the
> waveform endpoint voltages difference itself.  This would require a
> highly loaded waveform to settle to a more absolute voltage since it
> would have a smaller voltage swing.  Is this a good thing? 
> 
> 
> Also, this is easy to implement!! :)
> 
> 
> Example Waveform:
> 
>    Begins: (0ns, 0.0V)
>    Ends:   (9ns, 4.0V)
>    Load:   50 Ohms, 0.0V
>    
> 
> For 2% agreement, the v_tolerance = 2% * (4.0 - 0) = .08V
> 
>   So model passes if...
> 
>       -0.08 < v_dc_low_for_load < 0.08   
> 
>                AND
> 
>        3.92 < v_dc_high_for_load < 4.28
> 
> 
> Is this reasonable?
> 
> -Chris R.
> 
> 
> 

From owner-ibis  Thu Oct 31 11:13:47 1996
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From: Chris Rokusek <crokusek@qdt.com>
Organization: Quad Design Technology
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To: ibis@vhdl.org
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Subject: Re: Egg10 Implementation
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Kumar,

C. Kumar wrote:
> 
> That is a relative check. I have seen models which do not settle to anything anything near the dc voltage. I mean the dc voltage defined by the VI table. (it should be the true dc , isn't it?). I think it is necessary explicitly clarify whether you are talking about dc voltage or steady state settling voltage.

The test is designed to enforce what the spec says:

      A waveform table must include the entire waveform;
      the first entry (or entries) in a voltage column
***   must be the DC voltage of the output before switching
      and the last entry (or entries) of the column must be
      the final DC value of the output after switching.

The spec says "MUST BE", I think the spec should be more explicit and
say something more along the lines of...

The first/last waveform point voltages must lie within X Volts of the
given fixture loads interection with the appropriate (TYP/MIN/MAX) VI
curve where X = (first Waveform voltage point - last Waveform voltage
point) * 2%.

The models you mention that don't settle to anything near dc appear to
be in violation of the current spec.  Correct?  If we can decide on a
percentage, be it .01%, 1%, or 5%, then ibischk2 can enforce the spec
with the added code.

In the orginal example below, "v_dc_for_load" refers to the intersection
of the load line with the DC vi curve and thus would enforce a
correlation between each AC waveform endpoint and the VI curves.


> > Example Waveform:
> >
> >    Begins: (0ns, 0.0V)
> >    Ends:   (9ns, 4.0V)
> >    Load:   50 Ohms, 0.0V
> >
> >
> > For 2% agreement, the v_tolerance = 2% * (4.0 - 0) = .08V
> >
> >   So model passes if...
> >
> >       -0.08 < v_dc_low_for_load < 0.08
> >
> >                AND
> >
> >        3.92 < v_dc_high_for_load < 4.28
> >

From owner-ibis  Thu Oct 31 11:43:50 1996
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Date: Thu, 31 Oct 1996 13:43:02 -0500
From: "C. Kumar" <cpk@cadence.com>
Message-Id: <199610311843.NAA02814@hot>
To: ibis@vhdl.org, dileep@contec.Apsimtech.COM
Subject: Re: Rising Waveform Loading Effects
X-Sun-Charset: US-ASCII

I think I get the point Dileep is trying to make. It is true that with the V-t data there is no UNIQUE solution possible. This problem will baloon when we add multi stage models.

The real issue is IBIS is ONLY data. And the data is subject to different interpolation and extrapolation schemes. In other words this data by in itself cannot guarantee that different simulators will produce the same result. Neither can it say which one is correct. The only locus is the golden waveform. In this respect IBIS data  is fundamentally different from a macro model , where you should expect the same results from different simulators. IBIS data is rather a precursor to a macro model, which we do not have any standard for.

- kumar



> From owner-ibis@vhdl.vhdl.org Tue Oct 29 17:31 EST 1996
> Received-Date: Tue, 29 Oct 1996 17:31:23 -0500
> From: dileep@contec.Apsimtech.COM (Dileep Divekar)
> To: ibis@vhdl.org
> Subject: Re: Rising Waveform Loading Effects
> Cc: dileep@contec.Apsimtech.COM
> X-Sun-Charset: US-ASCII
> Content-Type: text
> Content-Length: 2417
> X-Lines: 46
> 
> 
> Arpad Muranyi, Intel Corporation wrote:
>  
> > What I mean by this is, that if the simulator is smart enough, it can take the 
> > data and modify it, derive new curves, etc.  So, if you have an I-V curve and a 
> > V-t curve which was generated with 50 Ohm resistive load in the model, a good 
> > simulator should derive a new V-t curve that matches the different load 
> > resistance in that particular simulation.  Taking this further, the simulator 
> > could make V-t curves with reactive loads also.  In general, then, the simulator
> > can simulate at each iteration with a different set of curves that matches any 
> > loading condition, even if the "load" is another non-linear I-V curve.  The 
> > point here is that the data in the IBIS model is not supposed to be a limiting 
> > factor to what the simulator does with it.
> 
> This is not quite true. Simulator cannot CREATE additional information.
> If V-t data is given only for one resistive load, how can the simulator
> create V-t data for arbitrary loading conditions? To illustrate the point,
> let us assume that the so called "load" can be described by only one
> independent variable. (In real life, it is an n-dimensional problem.)
> Let us assume that the dependent entity is the V-t curve. Thus, in this
> hypothetical two dimension space, the ibis specification gives one data
> point. From this single data point, there is no way to produce a straight
> line, or at least there is no UNIQUE way. If the ibis specification were
> to give two data points, then one can say that the simulator should be
> smart enough to fit a straight line thru these two points and then
> interpolate and extrapolate(although extrapolation is dangerous in many
> situations).
> [In practice, ibis specification has room to provide V-t curves for
> multiple loads, but the simulator is still limited by the information
> provided in the ibis model. It cannot CREATE V-t curves for the
> general n-dimensional case. The simulator may be able to do this if it
> makes certain assumptions, but since these assumptions are not specified
> in the ibis model, the simulation results will be unpredictable (and even
> unreliable).]
> 
> ------------------------------------------------------------
> Dileep Divekar
> Applied Simulation Technology, Inc.
> 2188 Bering Drive
> San Jose, CA 95131
> 
> Phone - (408)-434-0967 x 100
> Fax   - (408)-434-1003
> Email - dileep@apsimtech.com
> ------------------------------------------------------------
> 
> 

From owner-ibis  Thu Oct 31 11:47:46 1996
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The National GTL models have been updated on the IBIS reflector.

part gp612mea.ibs has been updated.

all other GTL parts have been removed. Dummy files with removed message
have been left in the directory.

jnp

From owner-ibis  Thu Oct 31 13:13:37 1996
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me too.

tx  

----- Previous Message ---------------------------------------------------- 



To: IBIS  @ vhdl.org @ UGATE
cc:  
From: DSTOUT @ btvlabvm.vnet.ibm.com ("Douglas W. Stout (446-6232)") @ UGATE    
Date: Wednesday  October 30, 1996 02:28 PM
Subject: unsubscribe
----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
please unsubscribe me from the ibis reflector. thanks



  

From owner-ibis  Thu Oct 31 14:05:58 1996
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From owner-ibis  Thu Oct 31 15:00:08 1996
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-- 
Ken Kun-Yung Chang
Gates 458,
kunyung@montana.stanford.edu
(415)723-9131 (O)

From owner-ibis  Thu Oct 31 15:42:06 1996
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From owner-ibis  Thu Oct 31 17:55:42 1996
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From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Thu, 31 Oct 96 17:42:54 PST_9@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re[6]: Ramp Def. ??


Text item: 

Ahmed,

I meant to say that lawyers have a good ability to put things in words so that 
noone can misinterpret what they say at a later time.  (I could be wrong on that
though).

Writing a spec in a non-misinterpretable way is very difficult, and I find that 
very often what I meant to say gets interpreted differently by someone else, 
because they have a different vocabulary, background, mindframe, etc.  This is 
what might have been the case here too.

It was totally clear to me that both places were saying the same, and yet you 
thought that it meant rail-to-rail in the first place, and 20-80 % in the 
second.  However, you were the first one I heard this interpretation from...

Arpad
================================================================================


Hello Arpad;

In your last note on this subject you wrote:

" I quess, this could have been written up a little more clearly, but we are
engineers, not lawyers.  And so far I didn't hear that any one else was
confused by this."

I do not understand! What point or points are you making with that paragraph?

Regards, Ahmed.
|---------------------------------------+------------------------------------|
|Ahmed Omer                             | Advanced Interconnect Systems Labs |
|E-MAIL: omera@trailblazer.sps.mot.com  | Semiconductor Products Sector      |
|      : R28450@email.sps.mot.com       | M O T O R O L A, Inc.              |
|Phone:      512-933-2247                   | 3501 Ed Bluestein Blvd  MDrop: F36
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|Fax:      512-933-5845                   | Austin, TX 78721                   |

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Subject: Re: Re[4]: Ramp Def. ??
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