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Date: Mon, 2 Jun 97 08:43 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS MINUTES 5/30/97

 DATE: June 2, 1997

 SUBJECT: 5/30/97 EIA IBIS Open Forum Minutes
  
 VOTING MEMBERS AND 1997 PARTICIPANTS LIST:
 AMP                            Jeff Walden
 Applied Simulation Technology  Dileep Divekar*, Norio Matsui, Raj Raghuram
 Cadence Design & UniCAD        C. Kumar*, Don Telian
 Cypress                        Bruce Wenniger
 Digital Equipment Corp.        Jeff Chu
 Hewlett Packard, EEsof         Karl Kachigan, Henry Wu
 High Design Technology         (Razvan Ene)
 HyperLynx                      Kellee Crisafulli
 INCASES                        Olaf Rethmeier*
 Intel Corporation              Stephen Peters*, Arpad Muranyi, Henry Maramis
 Interconnectix                 Bob Ross*
 Mitsubushi                     Tam Cao
 Motorola                       Ahmed Omer
 National Semiconductor         Syed Huq*, Cheng-Yang Kao, Mike Bristol,
				Peter Laflamme, Kevin Smith
 NCR                            Dave Moxley*, Richard Mellitz
 NEC                            (Hiroshi Matsumoto)
 Quad Design/Viewlogic          Jon Powell, Chris Rokusek
 Quantic EMC                    (Mike Ventham)
 Texas Instruments              Thomas Fisher
 Thomson-CSF/SCTF               (Jean LeBrun)
 VeriBest                       Ian Dodd, William Bell
 VLSI Technology                Harish Patel, D.C. Sessions
 Zuken-Redac                    (John Berrie)
 
 OTHER PARTICIPANTS IN 1997:
 3M                             Fran Hart
 Actel                          Scott Schlachter
 Acuson & Free Model Foundation Richard Munden
 Alcatel                        John Fitzpatrick*
 Ansoft                         Eric Bogatin
 Apteq Design Systems           Dan FitzPatrick 
 Compaq                         Weston Beal
 EIA                            Patti Rusher*
 EMC                            Fabrizio Zanella
 Micron Technology              Brian Johnson                      
 Molex                          Gus Panella
 North Carolina State U.        (Michael Steer)
 S3, Inc.                       Porsh Shih, Sarathy Sribhashyam
 Ultratest International        Charles Im
 Zeelan Technology              George Opsahl 

 In the list above, attendees at the meeting are indicated by *.  Principal
 members or other active members who have not attended are in parentheses.
 Participants who no longer are in the organization are in square brackets.

 Upcoming Meetings:  The bridge numbers for future IBIS teleconferences are as
 follows:
     
      Date       Bridge Number    Reservation #    Passcode  
      6/12/97    IBIS SUMMIT at Anaheim, CA - No Telephone Bridge

 All meetings are 8:00 AM to 9:55 AM Pacific Time.  We try to have agendas out 
 7 days before each open forum and meeting minutes out within 7 days after.  
 When you call into the meeting, ask for the IBIS Open Forum hosted by Will 
 Hobbs and give the reservation number and passcode.
 
 NOTE: "AR" = Action Required.
 
 -------------------------------- MINUTES -------------------------------------

 INTRODUCTIONS AND MEETING QUORUM
 No new participants.


 MEMBERSHIP UPDATE AND TREASURER'S REPORT
 Patti Rusher will provide a full report by next meeting.  Several companies
 will be billed again.  UniCAD is now moved to the Cadence line as a result
 of a recent merger with CCT.


 REVIEW OF MINUTES AND AR'S
 No corrections.


 MISCELLANY/ANNOUNCEMENTS
 None.


 PRESS AND WEB PAGE UPDATES
 Bob Ross reported that Dr. Howard Johnson gave liberal references to IBIS
 in his Straight Talk for Serious Digital Designers column "Planning
 for Signal Integrity" in Electronic Design, May 12, 1997, pp. 135-136. 

 Bob also reported an article "AMP Offers EDA Software" in Electronic
 Engineering Times, May 19, 1997, pp. 56-57 which mentions an IBIS-to AmpSpice
 converter.

 
 NEW MODELS AVAILABLE, LIBRARY UPDATE
 Bob Ross reported that Integrated Device Technology IBIS models are now
 downloadable at:

   http://www.idt.com/cross_pl/models.

 Under DOWNLOADABLE MODELS, hit search, and select Model Type "IBIS".

 AR - Jon Powell add this link to the EIA/IBIS Web site Model list.


 OPENS FOR NEW ISSUES
 Bob Ross - BIRD43
 Bob Ross - BIRD31.3 and BIRD32 close-out


 DESIGN AUTOMATION CONFERENCE (DAC) 1997 IBIS MEETING PLANNING
 Syed Huq reported on the planned agenda for the EIA/IBIS Summit meeting on
 Thursday, June 12, 1997 in Anaheim, California at the Marriott Hotel.  This
 will be next door to the Convention Center.  The agenda will be posted after
 the meeting, pending resolution of some BIRDs.

 Patti Rusher has reserved Suite 312, and this will also be noted in the lobby
 as an EIA/IBIS meeting.  She plans for 25 people with a continental breakfast
 starting at 8:30 A.M.  Lunch will also be provided.  An overhead projector,
 screen, podium, and flip chart will be available.  Syed requested that Patti
 bring blank foils and color markers for overheads.

 Syed requests that presenters bring 25 copies of their presentations to the 
 meeting to distribute.  This will save on logistics to copy the presentations.
 Bob Ross mentioned that there is no teleconferencing for this meeting since
 the expense is very high.

 AR - Syed Huq send out the Meeting Agenda [Done].
 

 INTERNATIONAL PROGRESS
 Patti Rusher reported on a USTAG group meeting which voted to approve a new
 work item proposal "IBIS Models and EMC Simulation" from France.  This 
 is for IEC TC93, and the proposal is referenced as 93/60/NP.  Bob Ross
 is listed as the US contact and will be copied on all activity.  Bob stated
 that US EDA vendors are interested in the proposal, so the Committee may
 want to become actively be involved.

 Patti stated that IBIS Version 2.1 is a separate approved new work item
 proposal 93/46/NP.

 Bob reported that Japanese EIAJ activity will be one of the IBIS Summit
 presentations.  This should give us an update on the I/O Interface Model for
 Integrated Circuits proposal.

 
 IBISCHK2+ REPORT 
 Bob Ross reported that Chris Rokusek has fixed a problem where some [Rising
 Waveform] and [Falling Waveform] tables were not fully tested for correct
 starting and ending values for Open_* Models.  Bob has put an updated version
 of ibischk2+ on vhdl.org under /pub/ibis/ibschk2+ for downloading.  Bob
 recommends this version as the utility to use for checking because it helps
 detect situations where the time window may not have been long enough for
 waveform table generation.


 IBIS COOKBOOK PROGRESS
 Stephen Peters has set some time to work on the Cookbook for IBIS Version 2.1.
 It will also reference a few IBIS Version 3.0 features.  Stephen will have
 copies available at the IBIS Summit meeting for review.  This copy is public
 and it has expanded and updated sections.  It also has answered many of the
 IBIS reflector questions.  Stephen has not included the preferred vendor test
 loads, nor has he included a section on measurement techniques.  


 S2IBIS2 ISSUES AND NT
 Bob Ross has posted an interim fix for a s2ibis2 resolution problem.  The fix
 has columns printed with four decimal digits.  Bob also noted continued
 IBIS reflector questions, and there may be some other bugs lurking in regions
 that have not been exercised thoroughly, such as ECL model processing.


 BIRD41.6 - MODELING SERIES SWITCHABLE DEVICES
 Bob Ross reported that he sent out a PSpice netlist to test the approach to
 model series switches.  BIRD41.6 has gone through successive modifications
 to and now includes a change so the [Model Selector] keyword also applies to
 Series and Series_switch models.

 (Dave Moxley indicated before the meeting started that he uses series switches
 for 5 V to 3.3 V interface applications.  He currently needs to use discrete
 series elements as an approximation.)

 Stephen Peters asked if BIRD41.6 includes the series resistor element, and
 Bob reported that it did in a manner that should be compatible with BIRD36.3.

 Bob has found a few editorial mistakes and plans to issue a correction
 BIRD41.7.  John Fitzpatrick commented at the end of the meeting that he
 agreed with the work in BIRD41.6.

 AR - Bob Ross issue BIRD41.7 with corrections [Done].


 BIRD42.1 - MODELING CURRENT WAVEFORMS
 Kumar agreed with the implementation that the [GND Current] and [POWER
 Current] tables be positioned under the [Rising Waveform] and [Falling
 Waveforml tables.  Bob Ross also has also added to the [Rising Waveform]
 Waveform] sections some suggested practices concerning what subparameters
 should not be used, if possible, to produce the best models for simulation.
 He also changed the examples so that they represented better fixture loads.
 The Waveform tables are derived from the same Spice model used for generating
 the [GND Current] and [Power Current] tables.  Stephen Peters commented
 that the new Waveform tables contain some non-monotonic points at the 
 beginning and wondered if this would be a problem with simulators.  Bob
 and Kumar responded that this would not be a problem for some simulators,
 but if it is, the simulators can filter the data.  IBIS should capture the
 actual data.  

 Kumar commented that the C_comp de-embedding mathematics can contribute to
 numerical problems - getting the C_comp current from the derivative of voltage
 across C_comp.  A note should be put in to warn about this.

 Stephen Peters asked if BIRD42.1 is intended for a more accurate model
 or for SSO bounce problems, and Kumar responded that it is for both.  The
 current distribution information is needed for more accurate representation
 in large ASICs with, say 1000, pins, and is also information for SSO.  The
 current tables can help in interpolation and fitting the response to the 
 existing loads.

 AR - Bob Ross issue BIRD41.2 with a C_comp note [Done].
 

 BIRD43 - COMPONENT TEST POINT SUBPARAMETERS
 Bob Ross introduced BIRD43 which adds two subparameters to [Component] in
 a manner similar to Polarity and Enable for [Model].  The Si_location and
 Timing_location subparameters give the location of the SI or Timing test
 points.  The choices are Die or Pin.  The default (without subparameters)
 is the Pin.  Some ASICs, however, give specifications at the Die.


 BIRD31.3 - MATED MODELS
 In preparation for Version 3.0 ratification, Bob Ross wanted to close out some
 dormant BIRDs.  BIRD31.3 was issued May, 1996.  Any new mated model proposal
 should be made relative to IBIS Version 3.0.  Since it would likely be
 proposed as a separate file, work on it can proceed in an independent manner
 from IBIS Version 3.0.  

 BIRD31.3 was rejected unanimously.

 
 BIRD32 - ADDITIONAL ENHANCEMENT TO THE PACKAGE MODEL (.pkg FILE)
 Bob Ross proposed that BIRD32 issued January, 1996 also be closed out, and 
 C. Kumar agreed.  A new proposal could be generated relative to IBIS Version 
 3.0 to advance the package syntax for coupled sections.

 BIRD32 was rejected unanimously.


 CONNECTOR MODELING
 Bob Ross suggested that this discussion be dropped until new proposals are
 presented.


 MODELING EARLY CLAMPS IN IBIS 
 Stephen Peters reported that a proposal will be issued, when needed.


 VERSION 3.0 RATIFICATION
 In preparation for the EIA/IBIS Summit, Bob Ross plans an updated Work in
 Progress pending Version 3.0 of IBIS stored on vhdl.org under /pub/ibis/wip.
 This version will include the changes in pending BIRDs 41.7, 42.2 and 43.
 Bob will also plan a cleaned up pending IBIS Version 3.0 that does not 
 contain the internal references to the BIRDs.  Bob will also make some minor
 editorial changes the document.  One change, for example, would be to simply
 the BIRD30.2 [Model Selector] to use more readable model names.

 Because of the anticipated size of these documents, Bob does not plan to
 mail them out on the IBIS reflector.  They will be available from a browser
 or by FTP.  However, Bob will mail a copy to anyone who requests one.  Also,
 IBIS members who cannot attend the EIA/IBIS Summit may submit votes on the
 pending BIRDs and on ratification of EIA/IBIS Version 3.0 by mail to Bob Ross
 (address below).

 AR - Bob Ross put in the IBIS wip directory the final updated pending IBIS
 Version 3.0 which shows the BIRD changes, and of a cleaned up Version of
 pending IBIS Version 3.0 without the references to BIRDs [Done].


 NEXT MEETING:
 The next meeting is a Face-to-face IBIS Summit Meeting on Thursday, June 12,
 1997, 8:30 A.M. to 5:00 P.M. at the Design Automation Conference in Anaheim,
 California.  BIRDs 41.7 and 42.3 and 43 will be up for a vote along with IBIS
 Version 3.0 ratification.  No telephone bridge will be available for this
 meeting.
 ==============================================================================
				       NOTES
 
 IBIS CHAIR: Bob Ross (503) 603-2523, Fax (503) 639-3469
	     bob@icx.com
	     Modeling Engineer, Interconnectix
	     10220 SW Nimbus Ave, K4, Portland, OR 97223

 VICE CHAIR: Syed Huq (408) 721-4874, Fax: (408) 721-4785
	     huq@rockie.nsc.com
	     Staff Applications Engineer, National Semiconductor, M/S A-2595
	     2900 Semiconductor Drive, Santa Clara, CA 95052
 
 LIBRARIAN:  Jon Powell (805) 988-8250, Fax: (805) 988-8259
	     jonp@qdt.com
	     Transmission-Line Products Manager, Quad Design/Viewlogic
	     1385 Del Norte Rd., Camarillo, CA 93010
 
 SECRETARY:  Vacant
 
 This meeting was conducted in accordance with the EIA Legal Guides and EIA
 Manual of Organization and Procedure.
 
 The following e-mail addresses are used:

   ibis-request@vhdl.org
       To join, change, or drop from either the IBIS Open Forum Reflector
       (ibis@vhdl.org), the IBIS Users' Group Reflector (ibis-users@vhdl.org)
       or both.  State your request.

   ibis-info@vhdl.org
       To obtain general information about IBIS, to ask specific questions
       for individual response, and to inquire about joining the EIA-IBIS
       Open Forum as a full Member.

   ibis@vhdl.org
       To send a message to the general IBIS Open Forum Reflector.  This
       is used mostly for IBIS Standardization business and future IBIS
       technical enhancements.  Job posting information is not permitted.

   ibis-users@vhdl.org
       To send a message to the IBIS Users' Group Reflector.  This is 
       used mostly for IBIS clarification, current modeling issues, and
       general user concerns.  Job posting information is not permitted.

   ibischk-bug@vhdl.org
       To report ibischk2 parser bugs.  The Bug Report Form Resides on
       vhdl.org in /pub/ibis/bugs/bugform.txt along with reported bugs.

 Information on IBIS technical contents, IBIS participants, and actual
 IBIS models are available on the IBIS Home page found by selecting the
 Electronic Information Group under:

   http://www.eia.org

 Check the pub/ibis directory on vhdl.org for more information on previous 
 discussions and results.  You can get on via FTP anonymous.
 
 "IBIS Spoken Here" placards are available from Jon Powell (jonp@qdt.com) for 
 use at trade shows.
 ==============================================================================

 
From owner-ibis  Mon Jun  2 10:49:13 1997
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Date: Mon, 2 Jun 97 10:50:53 PDT
From: scotts@actel.com (Scott Schlachter)
Message-Id: <9706021750.AA16843@ricky.sun_net>
To: chang@nexen.com, ibis-users@vhdl.org, ibis@vhdl.org
Subject: Re: Verifying IBIS models
Cc: jem@ricky.actel.com

Hi Luke,
My oppinions here are my own, and not necessarily those of my company.
I missed this when you first posted, but I feel compelled to input
my oppinion on this.  There has been discussion on the ibis reflector 
in the past regarding the accuracy of SPICE models, particularly in
the diode voltage regions.  For HSPICE in particular, we concluded
that the only way to provide a "non-ideal" set of clamping 
diodes (for CMOS), the transistors' inherent diodes needed to
be shut down (set IS=0, AD=0, and AS=0, I believe), and a descrete 
set of diodes placed on the drains of the transistors.  This problem
had something to do with the fact that there was no way to model 
the bulk resistance (the majority of the resistance that the 
inherent diodes should have experienced) without increasing 
channel resistance.  The reason that I am even bringing this up 
here, is that I wanted to provide at least one example of a 
potential source of innacuracy of a *very* commonly used
version of SPICE.  

We (painstakingly) developed our first IBIS model from a SPICE 
netlist, by attempting to add *all* possible parasitic components 
that we knew would exist in our actual silicon layout (resistance 
and capacitances in our metal interconnects, etc.).  We discovered
the above mentioned problem during this process, and sought
advice throught this email reflector.  What we found was that while
a few companies that were participating on the reflector knew about
and addressed this particular problem, there were definitely others 
that didn't. How well can you trust a vendors SPICE based IBIS model 
that you downloaded off the web?  Not to sound too harsh, but roll 
the dice. 

Our hope was to produce a IBIS model based on silicon measurments, 
and then check to see how accurately the SPICE versions corellated.  
If they matched well, we knew that we would have a very usefull method 
of providing an IBIS model file to our customers, potentially
even before we had silicon available.  In addition, we wanted
to be able to rely on the ramp data generated from the SPICE
models, because we knew that this data would be extremely hard
to extract from the Lab (on a packaged part, you have the 
package parasitics effecting the ramp; on an unpackaged 
die, you have parasitics added by the probe leads, etc.).

What we found after doing our lab measurements, was that there
was pretty good corellation between GND and VCC, but guess what?
The diode regions were close, but still had some discrepencies
(mostly around the knees).

This, in my oppinion, is the ultimate test that you are asking for.
However, when a vendor does this, they (like us) aren't going to 
bother releasing the SPICE based IBIS model - why should they, when
they now have (the more accurate) silicon measurement based version
that they can release instead?  I'm not saying that SPICED based
versions are untrustworthy; undoubtably there are some vendors that 
have developed extremely accurate SPICE models, even to the extent that
they may have done all sorts of tricks so as to accurate model their
netlists in the Voltage areas that are not traditionally dwelled in 
for development verification (more than a volt or 2 above VCC or below 
GND).  But a behavioral model can only be as accurate as the thing
that it's supposed to be behaving.  If that "thing" is a SPICE 
netlist...  I have just pointed out what I believe to be one definite 
shortcomming in one of the more popular SPICE versions out there. 
However, I also pointed out an unofficial workaround that *some* vendors 
are aware of.  I'll let you draw your own conclusions.

A last oppinion that I would like to make is this:  I personally 
think that SPICED based IBIS model files should only be used as
a last resort.  The case where SPICE models for a new process
are available, but the packaged silicon is not yet available,
might be a good example - you might be interested in a chip 
vendors product even before it has hit the market, and this provides
a way for you to initially simulate it's behavior on the new
board that you are designing, now - before it can even be purchased.  
Otherwise, why bother?  I am interested in hearing other vendors
response to this.  My conclusion was that extracting the data 
in the lab was 10x easier that struggling with trying to get the
SPICE netlist to be as accurate as possible; and, the lab data
is the "real thing" anyhow.  Consequently, lab data can be screwed-up
too, so ultimately you will need to either quiz the heck out of
the vendor who created the model file as to their methodology
(if they didn't describe it in total minute detail within the comments
of their IBIS model files), or you will just have to trust them...

-Scott Schlachter	Design Engineering
 scotts@actel.com	Actel Corporation
			Sunnyvale, CA

> From owner-ibis@server.vhdl.org Fri May 30 15:21:20 1997
> Luke Chang wrote:
> 
> > When IC vendors create IBIS models for their components, how do they
> > verify whether they are correct or not, compared to either the original
> > SPICE models or to physical measurement data?  Do they actually do this
> > comparison?  Is there a simulation methodology to do this comparison?
> > 
> > I am just a user of IBIS models and will never create them.  So I am
> > mainly interested in knowing whether I can always (blindly) trust the
> > models I get from the vendor Web sites or directly from the vendors.
> 
> I suppose the usual disclaimers (I can't, strictly speaking,
> speak for VLSI, much less other manufacturers) are in order.
> That said, here's a little about our approach:
> 
> 1) We SPICE the dickens out of I/O designs.
> 2) We verify the SPICE characteristics in design
>    validation and test against them.
> 3) We generate IBIS models from the SPICE models.
> 4) We spot-compare SPICE simulations made from
>    hand-translating IBIS back to SPICE.
> 
> We're in the process of converting the canonical
> model for testing purposes from old-fashioned data
> sheets to IBIS.  We *intensely* wish we had a
> working IBIS-to-SPICE translator that we could use
> for closing the loop, but at present there don't
> seem to be any around.
> 
> -- 
> D. C. Sessions
> dc.sessions@tempe.vlsi.com
> 
 
From owner-ibis  Mon Jun  2 16:21:02 1997
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Date: Mon, 02 Jun 1997 16:22:02 -0700
From: Danwei Xue <danwei@pico.apple.com>
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Hello, 

Could anyone explain what Serial Stub Terminated Transceiver Logic
(SSTL) is and point out where I can find some reading materials on it?

Thank you very much in advance,

Danwei
Apple Computer, Inc.
 
From owner-ibis  Tue Jun  3 04:37:08 1997
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Subject: Re: What is SSTL?
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Hello all,

Danwei's mail made me think about how to describe inputs of
technologies like SSTL and GTL in IBIS.

These technologies have "differential" inputs,
in the sense that there is a common reference input that can be
set externally. 

In IBIS 3.0, it will be possible to specify the input thresholds 
for typ/min/max voltages.  But there is no way of specifying
an external voltage reference.

Is there a need to extend IBIS to model SSTL inputs better?
It is very likely the SSTL (or similar technos, eg Rambus)
will become commonplace in memory systems.

Just a thought,
John

-- 
John Fitzpatrick   <John.Fitzpatrick@ln.cit.alcatel.fr>    
Alcatel Telecom, 4 rue de Broglie, 22304 Lannion, France
Tel: +33(0)2.96.04.79.33  Fax: +33(0)2.96.04.85.09


Danwei Xue wrote:
> 
> Hello,
> 
> Could anyone explain what Serial Stub Terminated Transceiver Logic
> (SSTL) is and point out where I can find some reading materials on it?
> 
> Thank you very much in advance,
> 
> Danwei
> Apple Computer, Inc.
 
From owner-ibis  Wed Jun  4 17:13:09 1997
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From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9706050015.AA22691@rockie.nsc.com>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: IBIS model download URL update - National
Cc: huq@rockie.nsc.com

IBISfans,

If you have bookmarked the National IBIS site, you need to 
update the URL. The new URL is:

	http://www.national.com/models

Previous link will send you to an old site. Sorry for this
inconvinience.

Regards,
Syed
National Semiconductor Corp.
 
From owner-ibis  Thu Jun  5 18:41:59 1997
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To: ibis@vhdl.org
From: Steve Kaufer <stevek@hyperlynx.com>
Subject: needed for IBIS V3.1

Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several
simple, clear example files, e.g., a simple IC using a minimum of
constructs, a more-complex IC using a few "extra" features like waveform
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to
newcomers that many are being scared off, to the detriment of the entire
standard. Remember V1.x? It was a relatively quick, easily comprehended
"read." What we have now is richer and more powerful, but also exponentially
more confusing. Some of us on the committee are probably "velocitized" to
the point where we're not aware of the problem's gravity.

From recent conversations with IBIS "newbies" (and this includes
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that
about 85% of modeling applications can use about 25% of the specification's
constructs, and point straight to the example models. Also good would be a
designation of some kind delineating between "basic" and "luxury" constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,
HyperLynx

 
From owner-ibis  Fri Jun  6 02:31:44 1997
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To: ibis@vhdl.org, Steve Kaufer <stevek@hyperlynx.com>
From: Hans M Hilbig <h-hilbig@ti.com>
Subject: re: needed for IBIS V3.1
Date: Fri, 6 Jun 1997 11:31:19 -0700
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Steve,
I fully subscribe the statements of your msg about the example files. Having
started with IBIS in my group early this year, we are still relativly new to
IBIS and can remember well the pitfalls we were trapping into. We had two major
reasons to generate IBIS models: Our customers like it and it's (still)
relativly easy to construct and to tweak (compared to H-SPICE). Personally I'm
concerned that IBIS will become so blown up in the future that the latter
reason will go away. Adding more bells and whistles does not necessarily mean
better 'accuracy', particularly if you don't have real (accurate) data to feed
the bells and whistles. Pls remember that our customers want us to supply IBIS
models early in the development stages, mostly at that time when the design
(and its simulation) is not completed yet. The more estimates and judgements we
add, the higher the chance that the model does not reflect the silicon that
comes out later.

Regards,
Hans M Hilbig
**************************************************************
EMSLP New Products Characterization Texas Instruments Freising
Phone:  +49-8161-804126  FAX:+49-8161-804909
e-mail: h-hilbig@ti.com

------------------
Original text

From: Steve Kaufer <stevek@hyperlynx.com>, on 6/6/97 9:25 AM:
Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several
simple, clear example files, e.g., a simple IC using a minimum of
constructs, a more-complex IC using a few "extra" features like waveform
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to
newcomers that many are being scared off, to the detriment of the entire
standard. Remember V1.x? It was a relatively quick, easily comprehended
"read." What we have now is richer and more powerful, but also exponentially
more confusing. Some of us on the committee are probably "velocitized" to
the point where we're not aware of the problem's gravity.

From recent conversations with IBIS "newbies" (and this includes
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that
about 85% of modeling applications can use about 25% of the specification's
constructs, and point straight to the example models. Also good would be a
designation of some kind delineating between "basic" and "luxury" constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,
HyperLynx



 
From owner-ibis  Fri Jun  6 07:48:37 1997
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From: Joe Cahill <jjcahill@us.ibm.com>
To: <stevek@hyperlynx.com>
Cc: <Ibis@Vhdl.Org>
Subject: Re: examples needed for IBIS V3.1
Message-Id: <5010400003996789000002L092*@MHS>
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Either examples or the cookbook are a very fine idea. I have been lurking here
for years, building models (not IBIS) and timing our systems for much longer,
and I am not easily intimidated. But I know that my first IBIS model will be a
very difficult task, and probably quite sloppy if I tackle it just with the
knowledge I can gain from the specification.

I have been awaiting the cookbook before I attempt my first 'trial' or
'experimental' models. Money for tools is very tight here, money for
engineering time is even tighter. Getting over the steep learning curve quickly
would allow us to consider much more intelligently using IBIS models (and
IBIS-based tools) as a base for our system timing tasks.

Joe
 
From owner-ibis  Fri Jun  6 07:58:30 1997
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Date: Fri, 06 Jun 97 07:55:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Fri, 06 Jun 97 07:57:37 PDT_12@ccm.fm.intel.com>
To: ibis@vhdl.org
Subject: Re: needed for IBIS V3.1


Text item: 

Steve,

Regarding the issue of "basic" and "luxury" items in IBIS, a very simple way to 
determine what is basic is to look at the criteria whether the item is required 
or not.  You will find that most items are optional.

Arpad
===============================================================================

Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several 
simple, clear example files, e.g., a simple IC using a minimum of 
constructs, a more-complex IC using a few "extra" features like waveform 
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to 
newcomers that many are being scared off, to the detriment of the entire 
standard. Remember V1.x? It was a relatively quick, easily comprehended 
"read." What we have now is richer and more powerful, but also exponentially 
more confusing. Some of us on the committee are probably "velocitized" to 
the point where we're not aware of the problem's gravity.

From recent conversations with IBIS "newbies" (and this includes 
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!" 
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that 
about 85% of modeling applications can use about 25% of the specification's 
constructs, and point straight to the example models. Also good would be a 
designation of some kind delineating between "basic" and "luxury" constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,
HyperLynx

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Subject: needed for IBIS V3.1
From: Steve Kaufer <stevek@hyperlynx.com>
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From owner-ibis  Fri Jun  6 09:00:44 1997
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To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Re: examples needed for IBIS V3.1
Date: Fri, 06 Jun 1997 08:59:52 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello All:

    I've been reading the mail talking about adding examples to the 
spec and/or the cookbook.  It's a very good idea, especially in
regards to the cookbook.  Do you, the dedicated users of IBIS, have
some specific examples in mind?  Also, are there some specific areas of the
spec that needs explanation or was particularly difficult to understand?
I am in the process of updateing the cookbook for presentation at the
IBIS face to face at DAC next week and your suggestions for
cookbook improvement would be helpfull.

               Thanks,
               Stephen Peters
               Intel Corp.

 
From owner-ibis  Fri Jun  6 09:02:23 1997
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The IBIS models web page has been updated with recent information.
Check it out.


Bugs to jonp@qdt.com


regards,
jon
 
From owner-ibis  Fri Jun  6 10:09:55 1997
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Date: Fri, 6 Jun 97 10:08 PDT
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org, stevek@hyperlynx.com
Subject: Re:  needed for IBIS V3.1

Steve:

We will put this discussion topic on the meeting Agenda.  Thank you for
proposing it.  I am also concerned about the amount of material in IBIS
and the fact that the fundamental aspects of IBIS are no longer apparent.
The new features in IBIS are all justified, based on real device modeling
issues.  However, most IBIS models will still need to follow only the
guidelines and convensions of IBIS Versions 1.1 and 2.1.  Having a set
of examples is an excellent starting point to illustrate both the
recommended fundamental aspects of IBIS models which apply to most
situations, and also to illustrate the new functionality.

I am also interested in ideas on how we can organize IBIS in a clearer
manner.

Bob Ross
Interconnectix


> Date: Thu, 5 Jun 1997 18:41:07 -0700 (PDT)
> To: ibis@vhdl.org
> From: Steve Kaufer <stevek@hyperlynx.com>
> Subject: needed for IBIS V3.1


> Mini-topic for the upcoming IBIS Summit meeting at DAC:

> I believe it's important for V3.1 of the specification to include several
> simple, clear example files, e.g., a simple IC using a minimum of
> constructs, a more-complex IC using a few "extra" features like waveform
> tables, a network-packaged passive device, and a bus switch.

> Why? Because lacking these, the specification is so intimidating to
> newcomers that many are being scared off, to the detriment of the entire
> standard. Remember V1.x? It was a relatively quick, easily comprehended
> "read." What we have now is richer and more powerful, but also exponentially
> more confusing. Some of us on the committee are probably "velocitized" to
> the point where we're not aware of the problem's gravity.

> >From recent conversations with IBIS "newbies" (and this includes
> semiconductor-vendor personnel, unfortunately), I think it works like this:

> 1. Reads IBIS spec (or part of it).
> 2. Wants to kill self.
> 3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
> 4. Then the real trouble begins...

> Personally, I'd like to see the opening page of the spec state clearly that
> about 85% of modeling applications can use about 25% of the specification's
> constructs, and point straight to the example models. Also good would be a
> designation of some kind delineating between "basic" and "luxury" constructs.

> I'd be interested in hearing opinions about this at the Summit...

> Regards,

> Steve Kaufer,
> HyperLynx



 
From owner-ibis  Fri Jun  6 10:29:16 1997
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Date: Fri, 06 Jun 97 10:22:00 PDT
From: Will Hobbs <Will_Hobbs@ccm.jf.intel.com>
Message-ID: <Fri, 06 Jun 97 10:28:21 PDT_5@ccm.jf.intel.com>
To: owner-ibis@server.vhdl.org, stevek@hyperlynx.com
cc: Ibis@Vhdl.Org
Subject: Re[2]: examples needed for IBIS V3.1


Text item: 

Folks,

The cookbook for V2.1 is imminent. Stephen Peters of Intel, who is responsible 
for the majority of the V1.1 cookbook, has made good progress on the new one. 
He is hoping to have it largely done and ready for review prior to the IBIS 
Summit at DAC next week. My preference would be to keep the examples out of the 
spec, but I could be swayed.

Regards,

Will Hobbs
Intel Corp.

Either examples or the cookbook are a very fine idea. I have been lurking here 
for years, building models (not IBIS) and timing our systems for much longer, 
and I am not easily intimidated. But I know that my first IBIS model will be a 
very difficult task, and probably quite sloppy if I tackle it just with the 
knowledge I can gain from the specification.

I have been awaiting the cookbook before I attempt my first 'trial' or 
'experimental' models. Money for tools is very tight here, money for 
engineering time is even tighter. Getting over the steep learning curve quickly 
would allow us to consider much more intelligently using IBIS models (and 
IBIS-based tools) as a base for our system timing tasks.

Joe

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From owner-ibis  Fri Jun  6 10:38:00 1997
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From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9706061739.AA11399@rockie.nsc.com>
To: ibis@vhdl.org, ibis-users@vhdl.org, sjpeters@ichips.intel.com
Subject: Re: examples needed for IBIS V3.1

Hi,

One helpful thing would be to put a model example that has 
data of almost all the model types and with all the optional
parameters that IBIS supports. This may not be a 'true' 
device but would serve as a 'example' only. Model types 
meaning, open_drain, ECL, PECL, CMOS etc etc and there is
a LOT of optional parameters ....

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Fri Jun  6 10:31:04 1997
> To: ibis@vhdl.org, ibis-users@vhdl.org
> Subject: Re: examples needed for IBIS V3.1
> Date: Fri, 06 Jun 1997 08:59:52 -0700
> From: Stephen Peters <sjpeters@ichips.intel.com>
> 
> 
> Hello All:
> 
>     I've been reading the mail talking about adding examples to the 
> spec and/or the cookbook.  It's a very good idea, especially in
> regards to the cookbook.  Do you, the dedicated users of IBIS, have
> some specific examples in mind?  Also, are there some specific areas of the
> spec that needs explanation or was particularly difficult to understand?
> I am in the process of updateing the cookbook for presentation at the
> IBIS face to face at DAC next week and your suggestions for
> cookbook improvement would be helpfull.
> 
>                Thanks,
>                Stephen Peters
>                Intel Corp.
> 
> 
 
From owner-ibis  Fri Jun  6 11:05:01 1997
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From owner-ibis  Fri Jun  6 12:31:19 1997
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To: <ibis@vhdl.org>
From: "fabrizio zanella" <fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>
Subject: re: needed for IBIS V3.1

Hans, you say that IBIS models are easier to work with than HSPICE models.  
What tool do you use to run the IBIS models?  I use HSPICE, it's an 
accurate tool and up until now 90% of the device models provided, ASICs and 
discrete transistors, have been in HSPICE format.
Now some of our suppliers are starting to create IBIS models and a couple 
have said they are switching exclusively to IBIS format for all their 
future ASIC and transistor models.
My question is, does anyone have a translator from IBIS to HSPICE or 
Berkeley or PSPICE format?  If not, how have other SPICE users handled the 
problem of running IBIS models?
Thank you,
 Fabrizio Zanella
			                          _/ _/  email: 
zanella_fabrizio@emc.com
       _/_/_/_/  _/     _/   _/_/_/     _/    voice: (508) 435-1000 Ext. 
4645
      _/        _/_/ _/_/  _/        _/          Fax: (508) 435-8949
     _/_/_/_/  _/  _/ _/  _/      _/_/_/
    _/        _/     _/  _/                       EMC Corporation
   _/_/_/_/  _/     _/    _/_/_/                  171 South Street
                                                Hopkinton, MA 01748-9103
-------------
Original Text
From: Hans M Hilbig <h-hilbig@ti.com>, on 6/6/97 11:31 AM:
To: <ibis@vhdl.org>, "Steve Kaufer" <stevek@hyperlynx.com>

Steve,
I fully subscribe the statements of your msg about the example files. 
Having
started with IBIS in my group early this year, we are still relativly new 
to
IBIS and can remember well the pitfalls we were trapping into. We had two 
major
reasons to generate IBIS models: Our customers like it and it's (still)
relativly easy to construct and to tweak (compared to H-SPICE). Personally 
I'm
concerned that IBIS will become so blown up in the future that the latter
reason will go away. Adding more bells and whistles does not necessarily 
mean
better 'accuracy', particularly if you don't have real (accurate) data to 
feed
the bells and whistles. Pls remember that our customers want us to supply 
IBIS
models early in the development stages, mostly at that time when the design
(and its simulation) is not completed yet. The more estimates and 
judgements we
add, the higher the chance that the model does not reflect the silicon that
comes out later.

Regards,
Hans M Hilbig
**************************************************************
EMSLP New Products Characterization Texas Instruments Freising
Phone:  +49-8161-804126  FAX:+49-8161-804909
e-mail: h-hilbig@ti.com

------------------
Original text

From: Steve Kaufer <stevek@hyperlynx.com>, on 6/6/97 9:25 AM:
Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several
simple, clear example files, e.g., a simple IC using a minimum of
constructs, a more-complex IC using a few "extra" features like waveform
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to
newcomers that many are being scared off, to the detriment of the entire
standard. Remember V1.x? It was a relatively quick, easily comprehended
"read." What we have now is richer and more powerful, but also 
exponentially
more confusing. Some of us on the committee are probably "velocitized" to
the point where we're not aware of the problem's gravity.

From recent conversations with IBIS "newbies" (and this includes
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that
about 85% of modeling applications can use about 25% of the specification's
constructs, and point straight to the example models. Also good would be a
designation of some kind delineating between "basic" and "luxury" 
constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,
HyperLynx



 
From owner-ibis  Fri Jun  6 13:51:28 1997
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Date: Fri, 06 Jun 1997 13:50:41 -0700
To: ibis@vhdl.org
From: Kellee Crisafulli <kellee@hyperlynx.com>
Subject: Re: examples needed for IBIS V3.1
Mime-Version: 1.0
Content-Type: text/plain; charset="us-ascii"

Hi IBISians,

  It seems we have found considerable common ground on this issue.  The
next question is who will contribute to effort.  Syed mentioned simple models
of many different technologies would be useful.   

e.g.
   Intel -> GTL model
   Xilinx -> basic CMOS model
   Syed -> RS232 model
   TI -> ABT model
    Bob Ross -> switch model

Any takers?
Step up to the plate and commit now while the ball is in motion.
One model from each company will be a lot of models.






-------------------------------------------------------------------------
Have a great day...
Kellee Crisafulli at HyperLynx Inc.
kellee@hyperlynx.com	http://www.hyperlynx.com
-------------------------------------------------------------------------
 
From owner-ibis  Fri Jun  6 15:30:22 1997
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Date: Fri, 6 Jun 97 15:32:41 PDT
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9706062232.AA16910@rockie.nsc.com>
To: ibis@vhdl.org, kellee@hyperlynx.com
Subject: Re: examples needed for IBIS V3.1

Hi,

Infact, I am right now working on doing my first RS-232 IBIS
model which will be TYP model based on measurements. You should
add a 'Differential' model to the list and I can pass one of
National's too.

Regards,
Syed.

> From owner-ibis@server.vhdl.org Fri Jun  6 15:18:14 1997
> X-Sender: kellee@mail.nwlink.com
> X-Mailer: Windows Eudora Pro Version 3.0 (32)
> Date: Fri, 06 Jun 1997 13:50:41 -0700
> To: ibis@vhdl.org
> From: Kellee Crisafulli <kellee@hyperlynx.com>
> Subject: Re: examples needed for IBIS V3.1
> Content-Type> : > text/plain> ; > charset="us-ascii"> 
> 
> Hi IBISians,
> 
>   It seems we have found considerable common ground on this issue.  The
> next question is who will contribute to effort.  Syed mentioned simple models
> of many different technologies would be useful.   
> 
> e.g.
>    Intel -> GTL model
>    Xilinx -> basic CMOS model
>    Syed -> RS232 model
>    TI -> ABT model
>     Bob Ross -> switch model
> 
> Any takers?
> Step up to the plate and commit now while the ball is in motion.
> One model from each company will be a lot of models.
> 
> 
> 
> 
> 
> 
> -------------------------------------------------------------------------
> Have a great day...
> Kellee Crisafulli at HyperLynx Inc.
> kellee@hyperlynx.com	http://www.hyperlynx.com
> -------------------------------------------------------------------------
> 
 
From owner-ibis  Sat Jun  7 14:01:58 1997
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Date: Sat, 7 Jun 97 16:59:53 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: ibis@vhdl.org
Cc: ingraham@wrksys.ENET.dec.com
Apparently-To: ibis@vhdl.org
Subject: Re: examples needed for IBIS V3.1

D. C. Sessions wrote:

> Just to be contrary, I'd think that it is better to have
> several VERY simple examples rather than one complex one
> where the (terrified) user has a hard time finding what 
> she needs.

I whole-heartedly agree!

We already have example fragments with all the keywords and
many of the optional parameters, right in the IBIS spec
document itself.  What we need are plain and simple examples
with only what's needed to get started.  All the extra
keywords and parameters come with experience and fine-tuning.

There is/was an example file with the version 1.0 spec. 
In fact I think it's still there.  Try this URL:
ftp://ftp.vhdl.org/pub/ibis/ver1.0/n74f244n.ibs

Some of the models in the ibis/models/ directory also might
be worth using.  Unfortunately, that directory seems to have
fallen into disrepair these days....

Regards,
Andy Ingraham
 
From owner-ibis  Mon Jun  9 00:02:03 1997
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To: "fabrizio zanella"
	<fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>,
        <ibis@vhdl.org>
From: Hans M Hilbig <h-hilbig@ti.com>
Subject: re: needed for IBIS V3.1
Date: Mon, 9 Jun 1997 09:00:37 -0700
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Fabrizio,
I'm comming from the bench measurement side, not from the Design or Simulation
side. Thus it was easier for us to 'close the loop' with IBIS: take
measurements of the device - generate the IBIS model - add the bench board
parasitics - feed both into an IBIS simulator - and see how well this matches
to what you have measured. On those parts where we didn't have silicon we used
the SPICE outputs from our Designers, generated IBIS models and verified them
by running the IBIS simulator with the known parasitics of the bench board
added.
Best regards,
Hans
*************************************************
EMSLP Characterization Texas Instruments Freising
Phone:  +49-8161-804126  FAX:+49-8161-804909
e-mail: h-hilbig@ti.com

------------------
Original text

From: "fabrizio zanella" <fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>,
on 6/6/97 3:24 PM:
Hans, you say that IBIS models are easier to work with than HSPICE models.  
What tool do you use to run the IBIS models?  I use HSPICE, it's an 
accurate tool and up until now 90% of the device models provided, ASICs and 
discrete transistors, have been in HSPICE format.
Now some of our suppliers are starting to create IBIS models and a couple 
have said they are switching exclusively to IBIS format for all their 
future ASIC and transistor models.
My question is, does anyone have a translator from IBIS to HSPICE or 
Berkeley or PSPICE format?  If not, how have other SPICE users handled the 
problem of running IBIS models?
Thank you,
 Fabrizio Zanella
			                          _/ _/  email: 
zanella_fabrizio@emc.com
       _/_/_/_/  _/     _/   _/_/_/     _/    voice: (508) 435-1000 Ext. 
4645
      _/        _/_/ _/_/  _/        _/          Fax: (508) 435-8949
     _/_/_/_/  _/  _/ _/  _/      _/_/_/
    _/        _/     _/  _/                       EMC Corporation
   _/_/_/_/  _/     _/    _/_/_/                  171 South Street
                                                Hopkinton, MA 01748-9103
-------------
Original Text
From: Hans M Hilbig <h-hilbig@ti.com>, on 6/6/97 11:31 AM:
To: <ibis@vhdl.org>, "Steve Kaufer" <stevek@hyperlynx.com>

Steve,
I fully subscribe the statements of your msg about the example files. 
Having
started with IBIS in my group early this year, we are still relativly new 
to
IBIS and can remember well the pitfalls we were trapping into. We had two 
major
reasons to generate IBIS models: Our customers like it and it's (still)
relativly easy to construct and to tweak (compared to H-SPICE). Personally 
I'm
concerned that IBIS will become so blown up in the future that the latter
reason will go away. Adding more bells and whistles does not necessarily 
mean
better 'accuracy', particularly if you don't have real (accurate) data to 

feed
the bells and whistles. Pls remember that our customers want us to supply 
IBIS
models early in the development stages, mostly at that time when the design
(and its simulation) is not completed yet. The more estimates and 
judgements we
add, the higher the chance that the model does not reflect the silicon that
comes out later.

Regards,
Hans M Hilbig
**************************************************************
EMSLP New Products Characterization Texas Instruments Freising
Phone:  +49-8161-804126  FAX:+49-8161-804909
e-mail: h-hilbig@ti.com

------------------
Original text

From: Steve Kaufer <stevek@hyperlynx.com>, on 6/6/97 9:25 AM:
Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several
simple, clear example files, e.g., a simple IC using a minimum of
constructs, a more-complex IC using a few "extra" features like waveform
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to
newcomers that many are being scared off, to the detriment of the entire
standard. Remember V1.x? It was a relatively quick, easily comprehended
"read." What we have now is richer and more powerful, but also 
exponentially
more confusing. Some of us on the committee are probably "velocitized" to
the point where we're not aware of the problem's gravity.

From recent conversations with IBIS "newbies" (and this includes
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that
about 85% of modeling applications can use about 25% of the specification's
constructs, and point straight to the example models. Also good would be a
designation of some kind delineating between "basic" and "luxury" 
constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,
HyperLynx





 
From owner-ibis  Mon Jun  9 07:05:59 1997
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Received: from wrksys.enet; by us1rmc.enet; Mon, 9 Jun 97 09:48:42 EDT
Date: Mon, 9 Jun 97 09:48:42 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: ibis@vhdl.org
Cc: ingraham@wrksys.ENET.dec.com
Apparently-To: ibis@vhdl.org
Subject: Re: IBIS PENDING VERSION 3.0 DOCUMENTS

May I suggest clearly identifying any IBIS spec work-in-progress
documents as being preliminary, within the document itself?

I have maybe a dozen copies of the version 2.1 spec in my mailbox,
including one that is identified as the "official, ratified IBIS 2.1
specification."  They all differ from the three versions of
"version 2.1" on vhdl.org (which ought to have been given different
minor revision numbers ... but that's yet another matter).

Please, put something RIGHT WITHIN THE DOCUMENT ITSELF, identifying it
as an unapproved version, until it has actually been approved.

I suggest adding the word "UNAPPROVED" to the second line, the one
that identifies the spec version.

Regards,
Andy Ingraham
 
From owner-ibis  Mon Jun  9 08:45:54 1997
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Date: Mon, 9 Jun 1997 08:44:46 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org, kellee@hyperlynx.com
Subject: Re: examples needed for IBIS V3.1

Kellee:

I also support doing this.  We can discuss this at the next meeting.
I would like to see a set of samples that we have reviewed stored
under a "samples" subdirectory.

Bob Ross
Interconnectix


> Date: Fri, 06 Jun 1997 13:50:41 -0700
> To: ibis@vhdl.org
> From: Kellee Crisafulli <kellee@hyperlynx.com>
> Subject: Re: examples needed for IBIS V3.1

> Hi IBISians,

>   It seems we have found considerable common ground on this issue.  The
> next question is who will contribute to effort.  Syed mentioned simple models
> of many different technologies would be useful.   

> e.g.
>    Intel -> GTL model
>    Xilinx -> basic CMOS model
>    Syed -> RS232 model
>    TI -> ABT model
>     Bob Ross -> switch model

> Any takers?
> Step up to the plate and commit now while the ball is in motion.
> One model from each company will be a lot of models.






> -------------------------------------------------------------------------
> Have a great day...
> Kellee Crisafulli at HyperLynx Inc.
> kellee@hyperlynx.com	http://www.hyperlynx.com
> -------------------------------------------------------------------------


 
From owner-ibis  Mon Jun  9 09:10:03 1997
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Date: Mon, 9 Jun 1997 09:08:57 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org, ingraham@wrksys.enet.dec.com
Subject: Re: IBIS PENDING VERSION 3.0 DOCUMENTS

Andy:

This is my mistake.  The ver3_0.ibs file has been updated in the
wip directory that the document is UNOFFICIAL PENDING.

Bob Ross
Interconnectix


> Date: Mon, 9 Jun 97 09:48:42 EDT
> From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
> To: ibis@vhdl.org
> Cc: ingraham@wrksys.ENET.dec.com
> Apparently-To: ibis@vhdl.org
> Subject: Re: IBIS PENDING VERSION 3.0 DOCUMENTS
> Status: RO

> May I suggest clearly identifying any IBIS spec work-in-progress
> documents as being preliminary, within the document itself?

> I have maybe a dozen copies of the version 2.1 spec in my mailbox,
> including one that is identified as the "official, ratified IBIS 2.1
> specification."  They all differ from the three versions of
> "version 2.1" on vhdl.org (which ought to have been given different
> minor revision numbers ... but that's yet another matter).

> Please, put something RIGHT WITHIN THE DOCUMENT ITSELF, identifying it
> as an unapproved version, until it has actually been approved.

> I suggest adding the word "UNAPPROVED" to the second line, the one
> that identifies the spec version.

> Regards,
> Andy Ingraham


 
From owner-ibis  Mon Jun  9 09:13:23 1997
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Date: Mon, 9 Jun 1997 09:12:18 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS BIRD44 Interpretation of Min/Max/Weak/Strong Data

To IBIS Committee:

BIRD44 was just submitted by Andy Ingraham.  This can also be
discussed at the IBIS Summit Meeting.

Bob Ross
Interconnectix



                       Buffer Issue Resolution Document  (BIRD)


BIRD ID#:      44
ISSUE TITLE:   Interpretation of Min/Max/Weak/Strong data
REQUESTOR:     Andy Ingraham, Digital Equipment Corp.
DATE SUBMITTED:    June 8, 1997
DATE ACCEPTED BY IBIS OPEN FORUM:     

*******************************************************************************
*******************************************************************************

STATEMENT OF THE ISSUE:

The wording in the IBIS spec doesn't clarify what "min" and "max"
refer to, where those terms are used.  For example, min temperature
for the [Temperature Range] keyword refers to the temperature that
causes minimum device strength, NOT to the minimum temperature.  For a
CMOS device, this is usually the maximum temperature within its
operating range.  This has caused IBIS models to be created
incorrectly.

*******************************************************************************

STATEMENT OF THE RESOLVED SPECIFICATIONS:

Modify the [Temperature Range] keyword definition section.  The old
text is:

|==============================================================================
|     Keyword:  [Temperature Range]
|    Required:  Yes, if other than the preferred 0, 50, 100 degree Celsius
|               range
| Description:  Defines the temperature range over which the model is
|               to operate.
| Usage Rules:  List the actual die temperatures (not percentages) in the
|               typ, min, max format.  "NA" is allowed for min and max only.
| Other Notes:  The [Temperature Range] keyword also describes the temperature
|               range over which the various V/I curves and ramp rates were
|               derived.
|------------------------------------------------------------------------------
| variable              typ             min             max
[Temperature Range]     27.0            -50             130.0
|

The new text is:

|==============================================================================
|     Keyword:  [Temperature Range]
|    Required:  Yes, if other than the IBIS default values
| Description:  Defines the temperature range over which the model is
|               to operate.
| Usage Rules:  List the actual die temperatures (not percentages) in the
|               typ, slow/weak, fast/strong format.  "NA" is allowed for
|               slow/weak and fast/strong only.
| Other Notes:  The [Temperature Range] keyword also describes the temperature
|               values over which the various V/I curves, ramp rates, and
|               waveforms were derived.
|
|               The default temperatures are 0, 50, 100 degree Celsius,
|               where the slow/weak is 0 and the fast/strong is 100. 
|               Thus, most CMOS devices will require the [Temperature
|               Range] keyword.
|------------------------------------------------------------------------------
| variable              typ             slow/weak       fast/strong
[Temperature Range]     27.0            -50             130.0
|


Modify the [Pulldown], [Pullup], [GND Clamp], and [POWER Clamp] keyword
definition section, as follows.

Old text:

| Usage Rules:  In each of these sections, the first column contains the
|               voltage value, and the three remaining columns hold the
|               typical, minimum, and maximum current values.  The four
|               entries, Voltage, I(typ), I(min), and I(max) must be placed on
|               a single line and must be separated by at least one white
|               space or tab character.
|
|               All four columns are required under these keywords.  However,
|               data is only required in the typical column.  If minimum
|               and/or maximum current values are not available, the reserved
|               word "NA" must be used.  "NA" can be used for currents in the
|               typical column, but numeric values MUST be specified for the
|               first and last voltage points on any V/I curve.  Each V/I
|               curve must have at least 2, but not more than 100, voltage
|               points.

New text:

| Usage Rules:  In each of these sections, the first column contains the
|               voltage value, and the three remaining columns hold the
|               typical, slow/weak, and fast/strong current values.  The four
|               entries, Voltage, I(typ), I(slow/weak), and I(fast/strong)
|               must be placed on a single line and must be separated by at
|               least one white space or tab character.
|
|               All four columns are required under these keywords.  However,
|               data is only required in the typical column.  If slow/weak
|               and/or fast/strong current values are not available, the
|               reserved word "NA" must be used.  "NA" can be used for
|               currents in the typical column, but numeric values MUST be
|               specified for the first and last voltage points on any V/I
|               curve.  Each V/I curve must have at least 2, but not more than
|               100, voltage points.

Old text:

|------------------------------------------------------------------------------
[Pulldown]
|  Voltage   I(typ)    I(min)    I(max)
|
   -5.0V    -40.0m    -34.0m    -45.0m
   -4.0V    -39.0m    -33.0m    -43.0m
|    .
|    .
    0.0V      0.0m      0.0m      0.0m
|    .
|    .
    5.0V     40.0m     34.0m     45.0m
   10.0V     45.0m     40.0m     49.0m
|
[Pullup]                               | Note: Vtable = Vcc - Voutput
|
|  Voltage   I(typ)    I(min)    I(max)
|
   -5.0V     32.0m     30.0m     35.0m
   -4.0V     31.0m     29.0m     33.0m
|    .
|    .
    0.0V      0.0m      0.0m      0.0m
|    .
|    .
    5.0V    -32.0m    -30.0m    -35.0m
   10.0V    -38.0m    -35.0m    -40.0m
|
[GND Clamp]
|
|  Voltage   I(typ)    I(min)    I(max)
|
   -5.0V  -3900.0m  -3800.0m  -4000.0m
   -0.7V    -80.0m    -75.0m    -85.0m
   -0.6V    -22.0m    -20.0m    -25.0m
   -0.5V     -2.4m     -2.0m     -2.9m
   -0.4V      0.0m      0.0m      0.0m
    5.0V      0.0m      0.0m      0.0m
|
[POWER Clamp]                          | Note: Vtable = Vcc - Voutput
|
|  Voltage   I(typ)    I(min)    I(max)
|
   -5.0V   4450.0m       NA        NA
   -0.7V     95.0m       NA        NA
   -0.6V     23.0m       NA        NA
   -0.5V      2.4m       NA        NA
   -0.4V      0.0m       NA        NA
    0.0V      0.0m       NA        NA
|

New text:

|------------------------------------------------------------------------------
[Pulldown]
|  Voltage   I(typ)  I(slow/weak)  I(fast/strong)
|
   -5.0V    -40.0m     -34.0m     -45.0m
   -4.0V    -39.0m     -33.0m     -43.0m
|    .
|    .
    0.0V      0.0m       0.0m       0.0m
|    .
|    .
    5.0V     40.0m      34.0m      45.0m
   10.0V     45.0m      40.0m      49.0m
|
[Pullup]                               | Note: Vtable = Vcc - Voutput
|
|  Voltage   I(typ)  I(slow/weak)  I(fast/strong)
|
   -5.0V     32.0m      30.0m      35.0m
   -4.0V     31.0m      29.0m      33.0m
|    .
|    .
    0.0V      0.0m       0.0m       0.0m
|    .
|    .
    5.0V    -32.0m     -30.0m     -35.0m
   10.0V    -38.0m     -35.0m     -40.0m
|
[GND Clamp]
|
|  Voltage   I(typ)  I(slow/weak)  I(fast/strong)
|
   -5.0V  -3900.0m   -3800.0m   -4000.0m
   -0.7V    -80.0m     -75.0m     -85.0m
   -0.6V    -22.0m     -20.0m     -25.0m
   -0.5V     -2.4m      -2.0m      -2.9m
   -0.4V      0.0m       0.0m       0.0m
    5.0V      0.0m       0.0m       0.0m
|
[POWER Clamp]                          | Note: Vtable = Vcc - Voutput
|
|  Voltage   I(typ)  I(slow/weak)  I(fast/strong)
|
   -5.0V   4450.0m        NA         NA
   -0.7V     95.0m        NA         NA
   -0.6V     23.0m        NA         NA
   -0.5V      2.4m        NA         NA
   -0.4V      0.0m        NA         NA
    0.0V      0.0m        NA         NA
|


Modify the [Ramp] keyword definition section, as follows:

Old text:

|               The ramp rate must be specified as an explicit fraction
|               and must not be reduced.  The [Ramp] values can use "NA" for
|               the min and max values only.  The R_load subparameter is
|               optional if the preferred 50 ohm load is used.  The R_load sub-
|               parameter is required if a non-standard load is used.
|------------------------------------------------------------------------------
[Ramp]
| variable      typ             min             max

New text:

|               The ramp rate must be specified as an explicit fraction
|               and must not be reduced.  The [Ramp] values can use "NA" for
|               the slow and fast values only.  The R_load subparameter is
|               optional if the preferred 50 ohm load is used.  The R_load sub-
|               parameter is required if a non-standard load is used.
|------------------------------------------------------------------------------
[Ramp]
| variable      typ             slow            fast


Modify the [Rising Waveform] and [Falling Waveform] keyword definition
sections, as follows.

Old text:

|     Usage Rules:  Each [Rising Waveform] and [Falling Waveform] keyword
|                   introduces a table of time vs. voltage points that
|                   describe the shape of an output waveform.  These
|                   time/voltage points are taken under the conditions
|                   specified in the R/L/C/V_fixture and R/L/C_dut
|                   subparameters.  The table itself consists of
|                   one column of time points, then three columns of
|                   voltage points in the standard typ, min, and max format.
|                   The four entries must be placed on a single line and
|                   must be separated by at least one white space or tab
|                   character.  All four columns are required.  However, data
|                   is only required in the typical column.  If minimum
|                   or maximum data is not available, use the reserved word
|                   "NA".  The first value in the time column need not be '0'.

New text:

|     Usage Rules:  Each [Rising Waveform] and [Falling Waveform] keyword
|                   introduces a table of time vs. voltage points that
|                   describe the shape of an output waveform.  These
|                   time/voltage points are taken under the conditions
|                   specified in the R/L/C/V_fixture and R/L/C_dut
|                   subparameters.  The table itself consists of
|                   one column of time points, then three columns of
|                   voltage points in the standard typ, slow, and fast format.
|                   The four entries must be placed on a single line and
|                   must be separated by at least one white space or tab
|                   character.  All four columns are required.  However, data
|                   is only required in the typical column.  If slow or fast
|                   waveform data is not available, use the reserved word
|                   "NA".  The first value in the time column need not be '0'.

Old text:

|                   V_fixture defines the voltage for typ, min, and max
|                   supply conditions.  However, when the fixture voltage
|                   is related to the power supply voltages, then the
|                   subparameters V_fixture_min and V_fixture_max can
|                   be used to further specify the fixture voltage for
|                   min and max supply voltages.

New text:

|                   V_fixture defines the voltage for typ, slow, and fast
|                   waveform conditions.  However, when the fixture voltage
|                   is related to the power supply voltages, then the
|                   subparameters V_fixture_min and V_fixture_max can
|                   be used to further specify the fixture voltage for
|                   the slow and fast waveforms.


Old text:

|------------------------------------------------------------------------------
[Rising Waveform]
R_fixture = 500
V_fixture = 5.0
V_fixture_min = 4.5           |Note, R_fixture is connected to Vcc
V_fixture_max = 5.5           |Specified, but not used in this example
C_fixture = 50p
L_fixture = 2n
C_dut = 7p
R_dut = 1m
L_dut = 1n
|Time     V(typ)     V(min)     V(max)
 0.0ns     0.3        0.5         NA
 0.5ns     0.3        0.5         NA
 1.0ns     0.6        0.7         NA
 1.5ns     0.9        0.9         NA
 2.0ns     1.5        1.3         NA
 2.5ns     2.1        1.7         NA
 3.0ns     3.0        2.7         NA
 3.5ns     3.2        3.0         NA
|
[Falling Waveform]
R_fixture = 50
V_fixture = 0
|Time     V(typ)     V(min)     V(max)
 10.0ns     3.2        3.0         NA
 10.5ns     3.0        2.7         NA
 11.0ns     2.1        1.7         NA
 11.5ns     1.5        1.3         NA
 12.0ns     0.9        0.9         NA
 12.5ns     0.6        0.7         NA
 13.0ns     0.3        0.5         NA
 13.5ns     0.3        0.5         NA
|

New text:

|------------------------------------------------------------------------------
[Rising Waveform]
R_fixture = 500
V_fixture = 5.0
V_fixture_min = 4.5           |Note, R_fixture is connected to Vcc
V_fixture_max = 5.5           |Specified, but not used in this example
C_fixture = 50p
L_fixture = 2n
C_dut = 7p
R_dut = 1m
L_dut = 1n
|Time     V(typ)     V(slow)    V(fast)
 0.0ns     0.3        0.5         NA
 0.5ns     0.3        0.5         NA
 1.0ns     0.6        0.7         NA
 1.5ns     0.9        0.9         NA
 2.0ns     1.5        1.3         NA
 2.5ns     2.1        1.7         NA
 3.0ns     3.0        2.7         NA
 3.5ns     3.2        3.0         NA
|
[Falling Waveform]
R_fixture = 50
V_fixture = 0
|Time     V(typ)     V(slow)    V(fast)
 10.0ns     3.2        3.0         NA
 10.5ns     3.0        2.7         NA
 11.0ns     2.1        1.7         NA
 11.5ns     1.5        1.3         NA
 12.0ns     0.9        0.9         NA
 12.5ns     0.6        0.7         NA
 13.0ns     0.3        0.5         NA
 13.5ns     0.3        0.5         NA
|


Modify the "NOTES ON DATA DERIVATION METHOD" as follows.

Old text:


| This section explains how data values are derived.  It describes certain
| assumed parameter and table extraction conditions if they are not
| explicitly specified.  It also describes the allocation of data into
| the "typ", "min", and "max" columns under variations of voltage,
| temperature, and process.
|
| The required "typ" column for all data represents typical operating
| conditions.  For most [Model] keyword data, the "min" column describes
| slow, weak performance, and  the "max" column describes the fast, strong
| performance.  It is permissible to use slow, weak devices or models to
| derive the data for the "min" column, and to use fast, strong devices or
| models to derive the data in the "max" columns under the corresponding
| voltage and temperature derating conditions for these columns.  It is also

New text:

| This section explains how data values are derived.  It describes certain
| assumed parameter and table extraction conditions if they are not
| explicitly specified.  It also describes the allocation of data into
| the "typ", "min", "slow", "slow/weak", "max", "fast", and "fast/strong"
| columns under variations of voltage, temperature, and process.
|
| The required "typ" column for all data represents typical operating
| conditions.  For most [Model] keyword data, the "min", "slow", or
| "slow/weak" column describes slow, weak performance, and  the "max", "fast",
| or "fast/strong" column describes the fast, strong performance.  It is
| permissible to use slow, weak devices or models to derive the data for the
| "min", "slow", or "slow/weak" column, and to use fast, strong devices or
| models to derive the data in the "max", "fast", or "fast/strong" column
| under the corresponding voltage and temperature derating conditions for
| these columns.  It is also

Old text:

| The voltage and temperature keywords and optionally the process models
| control the conditions which define the "typ", "min", and "max" column
| entries for all V/I table keywords [Pulldown], [Pullup], [Gnd Clamp],
| and [Power Clamp]; all [Ramp] subparameters dV/dt_r and dV/dt_f; and
| all waveform table keywords and subparameters [Rising Waveform],
| [Falling Waveform], V_fixture, V_fixture_min, and V_fixture_max.

New text:

| The voltage and temperature keywords and optionally the process models
| control the conditions which define the "typ", "slow", "slow/weak", "fast",
| and "fast/strong" column entries for all V/I table keywords [Pulldown],
| [Pullup], [Gnd Clamp], and [Power Clamp]; all [Ramp] subparameters dV/dt_r
| and dV/dt_f; and all waveform table keywords and subparameters [Rising
| Waveform], [Falling Waveform], V_fixture, V_fixture_min, and V_fixture_max.

Old text:

| The optional [Temperature] keyword will contain the temperature
| which causes or amplifies the slow, weak conditions in the "min" column
| and the temperature which causes or amplifies the fast, strong
| conditions in the "max" column.  Therefore, the "min" column for 
| [Temperature] will contain the lowest value for bipolar devices (TTL
| and ECL) and the highest value for CMOS devices.  Default values
| described later are assumed if temperature is not specified.

New text:

| The optional [Temperature Range] keyword will contain the temperature
| which causes or amplifies the slow, weak conditions in the "slow/weak"
| column and the temperature which causes or amplifies the fast, strong
| conditions in the "fast/strong" column.  Therefore, the "slow/weak" column
| for [Temperature Range] will contain the lowest value for bipolar devices
| (TTL and ECL) and the highest value for CMOS devices.  Default values
| described later are assumed if temperature is not specified.

Old text:

| The default temperatures under which all V/I tables are extracted are
| provided below.  The same defaults also are stated for the [Ramp]
| subparameters, but they also apply for the waveform keywords.

New text:

| The default temperatures under which all V/I tables, [Ramp] subparameters,
| and waveform tables are extracted are provided below.

Old text:

| 1) V/I curves for CMOS devices:
|      typ = typical voltage, typical temp deg C, typical process
|      min = minimum voltage, max temp deg C, typical process, minus "X%"
|      max = maximum voltage, min temp deg C, typical process, plus "X%"
|
|    V/I curves for bipolar devices:
|      typ = typical voltage, typical temp deg C, typical process
|      min = minimum voltage, min temp deg C, typical process, minus "X%"
|      max = maximum voltage, max temp deg C, typical process, plus "X%"


New text:

| 1) V/I curves for CMOS devices:
|      typ = typical voltage, nominal temp deg C, typical process
|      slow/weak = min voltage, max temp deg C, typical process, minus "X%"
|      fast/strong = max voltage, min temp deg C, typical process, plus "X%"
|
|    V/I curves for bipolar devices:
|      typ = typical voltage, nominal temp deg C, typical process
|      slow/weak = min voltage, min temp deg C, typical process, minus "X%"
|      fast/strong = max voltage, max temp deg C, typical process, plus "X%"

Old text:

|    e. Typ, Min, and Max must all be posted, and are derived at the same
|       extremes as the V/I curves, which are:
|
|       Ramp rates for CMOS devices:
|          typ = typical voltage, typical temp deg C, typical process
|          min = minimum voltage, max temp deg C, typical process, minus "Y%"
|          max = maximum voltage,  min temp deg C, typical process, plus  "Y%"
|
|       Ramp rates for bipolar devices:
|          typ = typical voltage, typical temp deg C, typical process
|          min = minimum voltage, min temp deg C, typical process, minus "Y%"
|          max = maximum voltage,  max temp deg C, typical process, plus  "Y%"

New text:

|    e. Typ, Slow, and Fast must all be posted, and are derived at the same
|       extremes as the V/I curves, which are:
|
|       Ramp rates for CMOS devices:
|          typ = typical voltage, nominal temp deg C, typical process
|          slow = minimum voltage, max temp deg C, typical process, minus "Y%"
|          fast = maximum voltage,  min temp deg C, typical process, plus  "Y%"
|
|       Ramp rates for bipolar devices:
|          typ = typical voltage, nominal temp deg C, typical process
|          slow = minimum voltage, min temp deg C, typical process, minus "Y%"
|          fast = maximum voltage,  max temp deg C, typical process, plus  "Y%"



*******************************************************************************

ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

These changes do not affect the IBIS spec itself.  There are no new or
modified keywords or subparameters.  Only the explanatory portions are
modified.

The problem with the existing wording is that it doesn't describe what
is meant by "min" or "max" at the place where they are used in the
spec.  This leads to confusion and misinterpretation, because the
customary meaning of "min", when speaking of temperatures, currents,
or voltages, is the minimum temperature, current, or voltage.  This is
generally not what is meant by the IBIS spec, as borne out by the
explanatory notes added to the back of the spec.

These definitions belong up-front, not tucked away in the back.

The changes proposed here are meant to make it obvious when the "min"
or "max" data should refer to "slow" or "fast" devices, as opposed to
"min" or "max" of the data being listed.

It is a move toward making it possible for anyone to pick up the spec,
read one section, and understand it correctly, without having to read
the whole thing through and cross-reference items that you thought
were obvious but aren't, and are not defined until you reach the end
of the spec.

*******************************************************************************

ANY OTHER BACKGROUND INFORMATION:

This is partly inspired by my making someone from another company
correct their IBIS model.

*******************************************************************************



 
From owner-ibis  Mon Jun  9 09:27:10 1997
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Message-Id: <199706091626.JAA13987@ichips.intel.com>
To: ibis@vhdl.org
Subject: Example Models
Date: Mon, 09 Jun 1997 09:26:18 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello All:

   In the quest for an examplet model -- does anyone have one?  I do
remember that the parser came with an example 74x04 hex inverter
example, but I can't locate it.  If anyone has an example of
a 'simple' component using the basic keywords please pass it
along to  sjpeters@ichips.intel.com


          Thanks,
          Stephen Peters
          Intel Corp


 
From owner-ibis  Mon Jun  9 10:03:22 1997
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	 <fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>
Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: AW: needed for IBIS V3.1
Date: Mon, 9 Jun 1997 18:59:51 +-200
MIME-Version: 1.0
Content-Type: text/plain; charset="us-ascii"
Content-Transfer-Encoding: 8bit
X-MIME-Autoconverted: from quoted-printable to 8bit by server.vhdl.org id KAA03170

Fabrizio,
we have developed an IBIS to HSPICE converter to generate HSPICE behavioral models.
The bases are IBIS 2.1 models. The static and dynamic driver characteristics fit very well
with the transistor based HSPICE simulations.

Best regards
Bernhard

************************************************************************************
#  Dr. Bernhard Unger                                                                                                   
#  Siemens AG                                                                                                                 
#  Dept. ANL A45 AM                                                                                                     
#  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404                                       
#  D-81730 Munich                  Fax.       +49-89-636-44595                                       
#  Germany                             E-Mail    Bernhard.Unger@erlm.siemens.de                                                                                        
************************************************************************************

----------
Von: 	fabrizio zanella[SMTP:fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com]
Gesendet: 	Freitag, 6. Juni 1997 21:24
An: 	ibis@vhdl.org
Betreff: 	re: needed for IBIS V3.1

Hans, you say that IBIS models are easier to work with than HSPICE models.  
What tool do you use to run the IBIS models?  I use HSPICE, it's an 
accurate tool and up until now 90% of the device models provided, ASICs and 
discrete transistors, have been in HSPICE format.
Now some of our suppliers are starting to create IBIS models and a couple 
have said they are switching exclusively to IBIS format for all their 
future ASIC and transistor models.
My question is, does anyone have a translator from IBIS to HSPICE or 
Berkeley or PSPICE format?  If not, how have other SPICE users handled the 
problem of running IBIS models?
Thank you,
 Fabrizio Zanella
			                          _/ _/  email: 
zanella_fabrizio@emc.com
       _/_/_/_/  _/     _/   _/_/_/     _/    voice: (508) 435-1000 Ext. 
4645
      _/        _/_/ _/_/  _/        _/          Fax: (508) 435-8949
     _/_/_/_/  _/  _/ _/  _/      _/_/_/
    _/        _/     _/  _/                       EMC Corporation
   _/_/_/_/  _/     _/    _/_/_/                  171 South Street
                                                Hopkinton, MA 01748-9103
-------------
Original Text
From: Hans M Hilbig <h-hilbig@ti.com>, on 6/6/97 11:31 AM:
To: <ibis@vhdl.org>, "Steve Kaufer" <stevek@hyperlynx.com>

Steve,
I fully subscribe the statements of your msg about the example files. 
Having
started with IBIS in my group early this year, we are still relativly new 
to
IBIS and can remember well the pitfalls we were trapping into. We had two 
major
reasons to generate IBIS models: Our customers like it and it's (still)
relativly easy to construct and to tweak (compared to H-SPICE). Personally 
I'm
concerned that IBIS will become so blown up in the future that the latter
reason will go away. Adding more bells and whistles does not necessarily 
mean
better 'accuracy', particularly if you don't have real (accurate) data to 
feed
the bells and whistles. Pls remember that our customers want us to supply 
IBIS
models early in the development stages, mostly at that time when the design
(and its simulation) is not completed yet. The more estimates and 
judgements we
add, the higher the chance that the model does not reflect the silicon that
comes out later.

Regards,
Hans M Hilbig
**************************************************************
EMSLP New Products Characterization Texas Instruments Freising
Phone:  +49-8161-804126  FAX:+49-8161-804909
e-mail: h-hilbig@ti.com

------------------
Original text

From: Steve Kaufer <stevek@hyperlynx.com>, on 6/6/97 9:25 AM:
Mini-topic for the upcoming IBIS Summit meeting at DAC:

I believe it's important for V3.1 of the specification to include several
simple, clear example files, e.g., a simple IC using a minimum of
constructs, a more-complex IC using a few "extra" features like waveform
tables, a network-packaged passive device, and a bus switch.

Why? Because lacking these, the specification is so intimidating to
newcomers that many are being scared off, to the detriment of the entire
standard. Remember V1.x? It was a relatively quick, easily comprehended
"read." What we have now is richer and more powerful, but also 
exponentially
more confusing. Some of us on the committee are probably "velocitized" to
the point where we're not aware of the problem's gravity.

>From recent conversations with IBIS "newbies" (and this includes
semiconductor-vendor personnel, unfortunately), I think it works like this:

1. Reads IBIS spec (or part of it).
2. Wants to kill self.
3. Hears about Spice-to-IBIS, and thinks "that's my only hope!"
4. Then the real trouble begins...

Personally, I'd like to see the opening page of the spec state clearly that
about 85% of modeling applications can use about 25% of the specification's
constructs, and point straight to the example models. Also good would be a
designation of some kind delineating between "basic" and "luxury" 
constructs.

I'd be interested in hearing opinions about this at the Summit...

Regards,

Steve Kaufer,

HyperLynx






 
From owner-ibis  Mon Jun  9 11:15:54 1997
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Date: Mon, 09 Jun 1997 11:13:45 -0700
To: ibis@vhdl.org, sjpeters@ichips.intel.com, Stevek@hyperlynx.com
From: Kellee Crisafulli <kellee@hyperlynx.com>
Subject: Re: Example Models
Mime-Version: 1.0
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Hi All,

At 09:26 AM 6/9/97 -0700, you wrote:
>   In the quest for an examplet model -- does anyone have one?  I do
>remember that the parser came with an example 74x04 hex inverter
>example, but I can't locate it.

HyperLynx will sign up for this one.  We will make a 74HC04 DIP model
for delivery by the middle of next week.  I would do it sooner but everyone
is busy with DAC releated items.


Who will sign up for a GTL model and an RS232 model and a ....
with a deliver date?









-------------------------------------------------------------------------
Have a great day...
Kellee Crisafulli at HyperLynx Inc.
kellee@hyperlynx.com	http://www.hyperlynx.com
-------------------------------------------------------------------------
 
From owner-ibis  Mon Jun  9 11:33:50 1997
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	id AA03454; Mon, 9 Jun 97 11:36:03 PDT
Date: Mon, 9 Jun 97 11:36:03 PDT
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9706091836.AA03454@rockie.nsc.com>
To: fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com,
        Bernhard.Unger@erlm.siemens.de
Subject: Re: IBIS to HSPICE
Cc: ibis@vhdl.org

Bernhard,

Do you consider this translation utility proprietary or can
this be used by the IBIS community as a shareware ?

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Mon Jun  9 11:26:15 1997
> From: Unger Bernhard <Bernhard.Unger@erlm.siemens.de>
> To: "'fabrizio zanella'"
> 	 <fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>
> Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
> Subject: AW: needed for IBIS V3.1
> Date: Mon, 9 Jun 1997 18:59:51 +-200
> Content-Type> : > text/plain> ; > charset="us-ascii"> 
> Content-Transfer-Encoding: quoted-printable
> 
> Fabrizio,
> we have developed an IBIS to HSPICE converter to generate HSPICE =
> behavioral models.
> The bases are IBIS 2.1 models. The static and dynamic driver =
> characteristics fit very well
> with the transistor based HSPICE simulations.
> 
> Best regards
> Bernhard
> 
> *************************************************************************=
> ***********
> #  Dr. Bernhard Unger                                                    =
>                                               =20
> #  Siemens AG                                                            =
>                                                     =20
> #  Dept. ANL A45 AM                                                      =
>                                               =20
> #  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404         =
>                              =20
> #  D-81730 Munich                  Fax.       +49-89-636-44595           =
>                            =20
> #  Germany                             E-Mail    =
> Bernhard.Unger@erlm.siemens.de                                           =
>                                             =20
> *************************************************************************=
 
From owner-ibis  Mon Jun  9 12:06:20 1997
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To: ibis@vhdl.org
Subject: Re: Example Models
Date: Mon, 09 Jun 1997 12:05:28 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello Kellie:

    Thank you very much for the '04 model!  Seeing as how I
have been dealing the GTL models, I can probably supply a
model showing the use of the V/T waveform and open-drain
constructs.  It would also be good to show a PCI driver that
includes different references for pullup and clamps.

                 Stephen


Hi All,

At 09:26 AM 6/9/97 -0700, you wrote:
>   In the quest for an examplet model -- does anyone have one?  I do
>remember that the parser came with an example 74x04 hex inverter
>example, but I can't locate it.

HyperLynx will sign up for this one.  We will make a 74HC04 DIP model
for delivery by the middle of next week.  I would do it sooner but everyone
is busy with DAC releated items.


Who will sign up for a GTL model and an RS232 model and a ....
with a deliver date?









-------------------------------------------------------------------------
Have a great day...
Kellee Crisafulli at HyperLynx Inc.
kellee@hyperlynx.com	http://www.hyperlynx.com
-------------------------------------------------------------------------
 
From owner-ibis  Wed Jun 11 03:34:51 1997
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Message-ID: <01BC7663.634C0EA0@PGTD0131>
From: Unger Bernhard <Bernhard.Unger@erlm.siemens.de>
To: "'Syed Huq'" <huq@rockie.nsc.com>
Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: AW: IBIS to HSPICE
Date: Wed, 11 Jun 1997 12:31:27 +-200
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Syed,
we have developed the IBIS to HSPICE converter for internal use only. We are part of
Siemens ANL Technical Services for Information Technology organization provideing 
EMC services for Siemens internal and external use. Presently we are discussing
models on how to distribute the conversion utility among potential users or alternatively
to provide support for conversion.
If there is a need for somebody to convert his IBIS models to HSPICE behavioral models
we can provide this service on request. So we encourage everyone to establish contact
to us to find a suitable solution ( see address below ).

Regards,
Bernhard

************************************************************************************
#  Dr. Bernhard Unger                                                                                                   
#  Siemens AG                                                                                                                 
#  Dept. ANL A45 AM                                                                                                     
#  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404                                       
#  D-81730 Munich                  Fax.       +49-89-636-44595                                       
#  Germany                             E-Mail    Bernhard.Unger@erlm.siemens.de                                                                                        
************************************************************************************

----------
Von: 	Syed Huq[SMTP:huq@rockie.nsc.com]
Gesendet: 	Montag, 9. Juni 1997 20:36
An: 	fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com; Bernhard.Unger@erlm.siemens.de
Cc: 	ibis@vhdl.org
Betreff: 	Re: IBIS to HSPICE

Bernhard,

Do you consider this translation utility proprietary or can
this be used by the IBIS community as a shareware ?

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Mon Jun  9 11:26:15 1997
> From: Unger Bernhard <Bernhard.Unger@erlm.siemens.de>
> To: "'fabrizio zanella'"
> 	 <fabrizio=zanella%Eng%EMCHOP1@fishbowl02.lss.emc.com>
> Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
> Subject: AW: needed for IBIS V3.1
> Date: Mon, 9 Jun 1997 18:59:51 +-200
> Content-Type> : > text/plain> ; > charset="us-ascii"> 
> Content-Transfer-Encoding: quoted-printable
> 
> Fabrizio,
> we have developed an IBIS to HSPICE converter to generate HSPICE =
> behavioral models.
> The bases are IBIS 2.1 models. The static and dynamic driver =
> characteristics fit very well
> with the transistor based HSPICE simulations.
> 
> Best regards
> Bernhard
> 
> *************************************************************************=
> ***********
> #  Dr. Bernhard Unger                                                    =
>                                               =20
> #  Siemens AG                                                            =
>                                                     =20
> #  Dept. ANL A45 AM                                                      =
>                                               =20
> #  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404         =
>                              =20
> #  D-81730 Munich                  Fax.       +49-89-636-44595           =
>                            =20
> #  Germany                             E-Mail    =
> Bernhard.Unger@erlm.siemens.de                                           =
>                                             =20
> *************************************************************************=



 
From owner-ibis  Wed Jun 11 05:20:37 1997
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Message-ID: <01BC7672.239BE5A0@PGTD0131>
From: Unger Bernhard <Bernhard.Unger@erlm.siemens.de>
To: "'D. C. Sessions'" <dc.sessions@tempe.vlsi.com>
Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: AW: AW: IBIS to HSPICE converter
Date: Wed, 11 Jun 1997 14:17:03 +-200
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You have asked for more informations about the IBIS to HSPICE converter.
Here they are:
The converter itself consists on some linked unix shell scripts.
Starting the converter you have to name the IBIS file, the pin number you
want to generate the HSPICE behavioral model and the name of the 
generated behavioral model. If there are more than one rising/falling 
waveforms the converter asks you, which of them you want to select. After 
finishing the conversion a first HSPLOT window opens showing you a 
comparison of the static output characteristics of transistor and behavioral
level based simulations. Going on a second HSPLOT window opens 
showing the comparison of the dynamic output characteristics. 

Presently the converter can not handle ECL and Open Collector outputs. 
But I see no principle problems to implement these features. The behavioral
model itself is a parametrisized model. That means, there is no input. Pulse
width, period, delay, initial state and in case of bidirectional pins enable
active/inactive are controlled by .PARAM statements.

Regards,

Bernhard

************************************************************************************
#  Dr. Bernhard Unger                                                                                                   
#  Siemens AG                                                                                                                 
#  Dept. ANL A45 AM                                                                                                     
#  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404                                       
#  D-81730 Munich                  Fax.       +49-89-636-44595                                       
#  Germany                             E-Mail    Bernhard.Unger@erlm.siemens.de                                                                                        
************************************************************************************

----------
Von: 	D. C. Sessions[SMTP:dc.sessions@tempe.vlsi.com]
Gesendet: 	Montag, 9. Juni 1997 19:52
An: 	Unger Bernhard
Betreff: 	Re: AW: needed for IBIS V3.1

Unger Bernhard wrote:
> 
> Fabrizio,
> we have developed an IBIS to HSPICE converter to generate HSPICE behavioral models.
> The bases are IBIS 2.1 models. The static and dynamic driver characteristics fit very well
> with the transistor based HSPICE simulations.

More, bitte?

-- 
D. C. Sessions
dc.sessions@tempe.vlsi.com



 
From owner-ibis  Fri Jun 13 17:28:40 1997
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Date: Fri, 13 Jun 1997 17:27:33 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS BIRD41.8 Modelling Series Switchable Devices

IBIS Committee:

BIRD41.8 is a modification of BIRD41.7 which was approved by the IBIS
Open Forum Summit meeting on June 12, 1997 with the following changes.

Keyword nomenclature change:

       [R_series], 
       [L_series], [R_l_series],
       [C_series], [R_c_series], [L_c_series]

to
       [R Series], 
       [L Series], [Rl Series],
       [C Series], [Rc Series], [Lc Series]

This is a style change so that only one space/dash is needed.

Also under [Model], first paragraph, two additional references to [Pin]
are changed to [Pin] or/and [Series Pin Mapping].

This is to document that the [Model] keyword also handles models refererenced
under both the [Pin] and [Series Pin Mapping] keywords.

Bob Ross
Interconnectix


******************************************************************************
******************************************************************************

BIRD ID#:      41.8
ISSUE TITLE:   Modelling Series Switchable Devices
REQUESTER:     John Fitzpatrick, Alcatel, Bob Ross, Interconnectix
DATE SUBMITTED:   2/12/97, 2/17/97, 5/14/97, 5/15/97, 5/16/97, 5/22/97,
                  5/28/97, 5/30/97, 6/12/97
DATE ACCEPTED BY IBIS OPEN FORUM:   June 12, 1997

******************************************************************************
******************************************************************************

STATEMENT OF THE ISSUE:

IBIS cannot model series devices. 
IBIS cannot model switches.
 
******************************************************************************

STATEMENT OF THE RESOLVED SPECIFICATIONS:

Two new keywords are defined under [Component]:
       [Series Switch Groups]
       [Series Pin Mapping]
      
Two new keywords are defined under [Model] by IV characteristics:
       [Series Current]
       [Series MOSFET]

RLC series paths can be defined under [Model] with:
       [R Series], 
       [L Series], [Rl Series],
       [C Series], [Rc Series], [Lc Series]

Two additional Model_type subparameter values are allowed under the [Model]
keyword:
       Series, 
       Series_switch

Two new keywords are defined under [Model] keyword so that the two electrical
states of Series_switch models can be described:
       [On]
       [Off]

           
Other changes are made in other sections that relate to these additions.
 

Add the following text somewhere after the [Component] keyword:

|==============================================================================
|     Keyword:  [Series Switch Groups]
|    Required:  No
| Description:  Used to define allowable switching combinations of series
|               switches described using the names of the groups in the
|               [Series Pin Mapping] keyword function_table_group column 
|  Sub-Params:  On, Off
| Usage Rules:  Each state line contains an allowable configuration.  A typical
|               state line will start with 'On' followed by all of the on-state
|               group names or an 'Off' followed by all of the off-state
|               group names.  Only one of 'On' or 'Off' is required since the
|               undefined states are presumed to be opposite of the explicitly
|               defined states.  The state line is terminated with the slash 
|               '/', even if it extends over several lines to fit within the 80
|               character column width restriction.
|
|               The group names in the function_table_group are used to 
|               associate switches whose switching action is synchronized by
|               a common control function.  The first line defines the assumed
|               (default) state of the set of series switches.  Other sets of
|               states are listed and can be selected through a user interface
|               or through automatic control.
|
|------------------------------------------------------------------------------
[Series Switch Groups]
| Function Group States
On 1 2 3 4 /           | Default setting is all switched On.
|
Off 1 2 3 4 /          | All Off setting.
On 1 /                 | Other possible combinations below.
On 2 /
On 3 /
On 4 /
On 1 2 /
On 1 3 /
On 1 4 /
On 2 3 /
On 2 4 /
On 3 4 /
On 1 2 3 /
On 1 2 4 /
On 1 3 4 /
On 2 3 4 /
| Off 4 /              | The last four lines above could have been replaced   
| Off 3 /              | with these four lines with the same meaning.
| Off 2 / 
| Off 1 /
|
On 5 /                 | Crossbar switch straight thru connection
On 6 /                 | Crossbar cross over connection
Off 5 6 /              | Crossbar open switches
|
|==============================================================================
|     Keyword:  [Series Pin Mapping]
|    Required:  No
| Description:  Used to associate two pins joined by a series device.
|  Sub-Params:  pin_2, model_name, function_table_group
| Usage Rules:  Enter only series pin pairs.  The first column, [Series Pin
|               Mapping], contains the series pin for which input impedances
|               are measured.  The second column, pin_2, contains the other
|               connection of the series model.  Each pin must match the
|               pin numbers declared previously in the [Pin] section of the
|               IBIS file.  The third column, model_name, associates the
|               Series or Series_switch model for the pair of pins in the
|               first two columns.  The fourth column, function_table_group,
|               contains an alphanumeric designator string to associate those
|               sets of of Series_switch pins that are switched together.
|
|               Each line must contain either three or four columns.  When
|               using four columns, the header function_table_group must be
|               listed.  
|
|               One possible application is to model crossbar switches where
|               the straight through On paths are indicated by one designator
|               and the cross over On paths are indicated by another
|               designator.  If the model referenced is a Series model, then
|               the function_table_group entry is omitted.
| 
|               Column length limits are:
|                  [Series Pin Mapping]       5 characters max
|                  pin_2                      5 characters max
|                  model_name                20 characters max
|                  function_table_group      20 characters max
|
| Other Notes:  If the model_name is for a non-symmetrical series device, 
|               then the order of the pins is important.  The [Series Pin
|               Mapping] and pin_2 entries must be in the columns that
|               correspond with Pin 1 and Pin 2 of the referenced model.
|
|               This mapping covers only the series paths between pins.  The
|               package parasitics and any other elements such as additional
|               capacitance or clamping circuitry are defined by the
|               model_name that is referenced in the [Pin] keyword.  The
|               model_names under the [Pin] keyword that are also referenced
|               by the [Series Pin Mapping] keyword must be either 'NC' or
|               reference a [Model] whose Model_type is 'Terminator'.  Thus.
|               for example, a Series_switch model may contain Terminator
|               models on EACH of the pins to describe both the capacitance
|               on each pin and some clamping circuitry that may exist on
|               each pin.
|
|------------------------------------------------------------------------------
[Series Pin Mapping]  pin_2    model_name      function_table_group
|
  2                    3       CBTSeries       1    | Four independent groups
  5                    6       CBTSeries       2
  9                    8       CBTSeries       3    
  12                  11       CBTSeries       4
|
  22                  23       CBTSeries       5    | Straight through path
  25                  26       CBTSeries       5
  22                  26       CBTSeries       6    | Cross over path
  25                  23       CBTSeries       6
| 
  32                  33       Fixed_series         | No group needed


Under the [Model] keyword, first paragraph of 'Usage Rule:', change the references to [Pin] keyword to [Pin] and/or [Series Pin Mapping] keyword(s)"
as shown:

| Usage Rules:  Each model type must begin with the keyword [Model].
|               The model name must match the one that is listed under
|               the [Pin] or [Series Pin Mapping] keyword and must not
|               contain more than 20 characters.
|               A .ibs file must contain enough [Model] keywords to cover all
|               of the model names specified under the [Pin] and [Series Pin
|               Mapping] keywords, except
|               for those model names that use reserved words (POWER, GND and
|               NC).  Model names with reserved words are an exception and they
|               do not have to have a corresponding [Model] keyword.
|


Under the [Model] keyword, change existing text from:

|               Model_type must be one of the following:
|               Input, Output, I/O, 3-state, Open_drain, I/O_open_drain,
|               Open_sink, I/O_open_sink, Open_source, I/O_open_source,
|               Input_ECL, Output_ECL, I/O_ECL, and Terminator.
|

to:

|               Model_type must be one of the following:
|               Input, Output, I/O, 3-state, Open_drain, I/O_open_drain,
|               Open_sink, I/O_open_sink, Open_source, I/O_open_source,
|               Input_ECL, Output_ECL, I/O_ECL, Terminator, Series, and
|               Series_switch.
|


Add text to the special usage rules:

|
|               Series             This model type is for series devices 
|                                  which can be described by [R Series],
|                                  [L Series], [Rl Series], [C Series], 
|                                  [Lc Series], [Rc Series], [Series 
|                                  Current] or [Series MOSFET] keywords
|                                 
|               Series_switch      This model type is for series switch
|                                  devices which can described by [On],
|                                  [Off], [R Series], [L Series],
|                                  [Rl Series], [C Series], [Lc Series],
|                                  [Rc Series], [Series Current] and 
|                                  [Series MOSFET] keywords


Add the following text after the [Rgnd] keyword:

|==============================================================================
|     Keyword:  [On], [Off]
|    Required:  Yes, both [On] and [Off] for Series_switch Model_types only
| Description:  The 'On' state electrical models are positioned under [On].
|               The 'Off'state electrical models are positioned under [Off].
| Usage Rules:  These keywords are only valid for Series_switch Model_types.
|               Only keywords associated with Series_switch electrical models
|               are permitted under [On] or [Off].  The Series electrical
|               models describe the path for one state only and do not use
|               use the [On] and [Off] keywords.
|
|               In Series_switch models, [On] or [Off] must be positioned
|               before any of the [R Series], [L Series], [Rl Series],
|               [C Series], [Lc Series], [Rc Series], [Series Current],
|               and [Series MOSFET} keywords.  There is no provision for
|               any of these keywords to be defined once, but to apply to
|               both states.
|------------------------------------------------------------------------------
[On]
| ...  On state keywords such as [R Series], [Series Current], 
| ...  [Series MOSFET]
[Off]
| ...  Off state keywords such as [R Series], [Series Current] 
|==============================================================================
|    Keywords:  [R Series], [L Series], [Rl Series], [C Series]. [Lc Series],
|               [Rc Series]
|    Required:  Yes, if they exist in the device
| Description:  The data for these keywords allow the definition of Series or
|               Series_switch R, L or C paths.   
| Usage Rules:  For each of these keywords, the three columns hold the typical,
|               minimum, and maximum resistance values.  The three entries must
|               be placed on a single line and must be separated by at least
|               one white space or tab character.  All three columns are
|               required under these keywords.  However, data is only required
|               in the typical column.  If minimum and/or maximum values are
|               not available, the reserved word "NA" must be used.
| Other Notes:  This series RLC model is defined to allow IBIS to model
|               simple passive devices and/or parasitics.
|
|               These keywords are valid only for Series or Series_switch
|               Model_types.
|
|               The model is:
|
|                            R Series
|                        +---/\/\/\/\--------------------+
|                        |                               |
|                 Pin 1  |   L Series  Rl Series         |  Pin 2
|                    <---+---@@@@@@@@-/\/\/\/\-----------+--->
|                        |                               |
|                        |   | |                         |
|                        +---| |--@@@@@@@@@---/\/\/\/\---+
|                            | |  Lc Series   Rc Series
|                          C Series
|
|               [Rl Series] shall be defined only if [L Series] exists.
|               [Rl Series] is 0 ohms if it is not defined in the path.
|
|               [Rc Series] and [Lc Series] shall be defined only if
|               [C Series] exists.  [Rc Series] is 0 ohms if it is not
|               defined in the path.  [Lc Series] is 0 henries if it is
|               not defined in the path.
|
|               C_comp values are ignored for these keywords.
|------------------------------------------------------------------------------
| variable      R(typ)          R(min)          R(max)
[R Series]      8ohm            6ohm            12ohm
|
| variable      L(typ)          L(min)          L(max)
[L Series]      5nH             NA              NA
| variable      R(typ)          R(min)          R(max)
[Rl Series]     4ohm            NA              NA
|
| variable      C(typ)          C(min)          C(max)  | The other elements
[C Series]      50pF            NA              NA      | are 0 impedance
|
|==============================================================================
|     Keyword:  [Series Current]
|    Required:  Yes, if they exist in the device
| Description:  The data points under this keyword define the V/I curves for
|               voltages measured at Pin 1 with respect to Pin 2.  Currents 
|               are considered positive if they flow into Pin 1.  Pins 1 and 
|               2 are listed under the [Series Pin Mapping] keyword under
|               columns [Series Pin Mapping] and pin_2, respectively.
| Usage Rules:  The first column contains the voltage value, and the 
|               remaining columns hold the typical, minimum, and maximum
|               current values.  The four entries, Voltage, I(typ), I(min),
|               and I(max) must be placed on a single line and must be 
|               separated by at least one white space or tab character.
|
|               All four columns are required under these keywords.  However,
|               data is only required in the typical column.  If minimum
|               and/or maximum current values are not available, the reserved
|               word "NA" must be used.  "NA" can be used for currents in the
|               typical column, but numeric values MUST be specified for the
|               first and last voltage points on any V/I curve.  Each V/I
|               curve must have at least 2, but not more than 100, voltage
|               points.
|
| Other Notes:  There is no monotonicity requirement. However the model
|               supplier should realise that it may not be possible to derive
|               a behavioral model from non-monotonic data.
|
|               These keywords are valid only for Series or Series_switch
|               Model_types.
|
|               The model is:
|
|                                Table Current
|                                   ------>
|                             +  Table Voltage  -
|                          Pin 1  |---------|  Pin 2
|                             <---+         +--->
|                                 |---------|
|
|               C_comp values are ignored for [Series Current] models.
|------------------------------------------------------------------------------
[Series Current]
|
|  Voltage   I(typ)    I(min)    I(max)
|
   -5.0V  -3900.0m  -3800.0m  -4000.0m
   -0.7V    -80.0m    -75.0m    -85.0m
   -0.6V    -22.0m    -20.0m    -25.0m
   -0.5V     -2.4m     -2.0m     -2.9m
   -0.4V      0.0m      0.0m      0.0m
    5.0V      0.0m      0.0m      0.0m
|==============================================================================
|     Keyword:  [Series MOSFET]
|    Required:  Yes, for series MOSFET switches
| Description:  The data points under this keyword define the V/I curves for
|               voltages measured at Pin 2 for a given Vds setting.  Currents 
|               are considered positive if they flow into Pin 1.  Pins 1 and 
|               2 are listed under the [Series Pin Mapping] keyword under
|               [Series Pin Mapping] and pin_2 columns, respectively.
|  Sub-Params:  Vds
| Usage Rules:  The first column contains the voltage value, and the three
|               remaining columns hold the typical, minimum, and maximum
|               current values.  The four entries, Voltage, I(typ), I(min),
|               and I(max) must be placed on a single line and must be
|               separated by at least one white space or tab character.
|
|               All four columns are required under these keywords.  However,
|               data is only required in the typical column.  If minimum 
|               and/or maximum current values are not available, the reserved
|               word "NA" must be used.  "NA" can be used for currents in the
|               typical column, but numeric values MUST be specified for the
|               first and last voltage points on any V/I curve.  Each V/I 
|               curve must have at least 2, but not more than 100, voltage
|               points.
|
| Other Notes:  There is no monotonicity requirement. However the model
|               supplier should realise that it may not be possible to derive
|               a behavioral model from non-monotonic data.
|
|               The model is:
|
|                                Table Current
|                                   ------->
|                               +     Vds     -
|                             Pin 1           Pin 2
|                               <---|     |--->  +
|                               d   |_____| - s
|                                    --+-- Vgs   Vs
|                                      | g  +
|                                                -
|
|                       Vg = [Voltage Range] = Vcc
|                       Vgs = Table Voltage = Vtable = Vcc - Vs
|                       Ids = Table Current for a given Vcc and Vds
|
|               Internal logic that is generally referenced to the power rail
|               is used to set the MOSFET switch to its 'On' state.  Thus the
|               [Voltage Range] settings provide the assumed gate voltages.
|               If the [POWER Clamp Reference] exists, it overrides the
|               [Voltage Range] value.  The table entries are actually the
|               Vgs values referenced to the power rail.  The polarity
|               conventions are identical with those used for other tables that
|               are referenced to power rails.  Thus the voltage column can
|               be viewed as a table defining the source voltages Vs according
|               to the convention:  Vtable = Vcc - Vs.
|
|               If the switch is used in an application such as interfacing
|               between 3.3 V and 5.0 V logic, the Vcc may be biased at a 
|               voltage (such as 4.3 V) that is different from a power rail
|               voltage (such as 5.0 V) used to create the model.  Just
|               readjust the [Voltage Range] entries (or [POWER Clamp
|               Reference] entries).
|
|               One fundamental assumption in the MOSFET switch model is that
|               it operates in a symmetrical manner.  The tables and
|               expressions are given assuming that Vd => Vs.  If Vd < Vs,
|               then apply the same relationships under the assumption that
|               the source and drain nodes are interchanged.  A consequence of
|               assumption is that the Vds subparameter is constrained to
|               values Vds > 0.  It is assumed that with Vds = 0 the currents
|               will be 0 mA.  A further consequence of this assumption that
|               would be embedded in the analysis process is that the voltage
|               table is based on the side of the device with the lowest
|               voltage (and that side is defined as the source).  Thus the
|               analysis must allow current to flow both in directions, as
|               would occur due to refections when the switch is connected
|               in series with an unterminated transmission line.
|
|               The model data is used to create an On state relationship
|               between the actual drain to source current, ids, and the 
|               actual drain to source voltage, vds:
|
|                                    ids = f(vds).
|
|               This functional relationship depends on the actual source
|               voltage Vs and can be expressed in terms of the corresponding
|               table currents associated with Vs (and expressed as a function
|               of Vgs).
|
|               If only one [Series MOSFET] table is supplied (as a first
|               order approximation), the functional relationship is assumed
|               to be linearly related to the table drain to source current,
|               Ids, for the given Vds subparameter value and located at the
|               existing gate to source voltage value Vgs.  This table current
|               is denoted as Ids(Vgs, Vds).  The functional relationship
|               becomes:
|
|                            ids = Ids(Vgs, Vds) * vds / Vds.  
|
|               More than one [Series MOSFET] table is permitted, but it is
|               simulator dependent how the data will be used.
|
|               C_comp values are ignored for [Series MOSFET] models.
|------------------------------------------------------------------------------
[On]
[Series MOSFET]
Vds = 1.0     
|  Voltage   I(typ)    I(min)    I(max)
|
    5.0V    257.9m     153.3m    399.5m     | Defines the Ids current as a
    4.0V    203.0m     119.4m    317.3m     | function of Vgs, for Vds = 1.0
    3.0V    129.8m      74.7m    205.6m 
    2.0V     31.2m      16.6m     51.0m
    1.0V     52.7p      46.7p     56.7p
    0.0V      0.0p       0.0p      0.0p
|
|==============================================================================


In the [Model Selector] keyword associated with approved BIRD30.2, change
the first paragraph of 'Usage Rules:' as follows so that each occurance of
[Pin] keyword is changed to [Pin] and/or [Series Pin Mapping] keyword(s)
as shown:

| Usage Rules:  A programmable buffer must have an individual [Model] section
|               for each one of its modes used in the .ibs file.  The names of
|               these [Model]s must be unique and can be listed under the
|               [Model selector] keyword and/or pin list.  The name of the
|               [Model selector] keyword must match the corresponding model
|               name listed under the [Pin] or [Series Pin Mapping] keyword
|               and must not contain more
|               than 20 characters.  A .ibs file must contain enough [Model
|               selector] keywords to cover all of the model selector names
|               specified under the [Pin] and [Series Pin Mapping] keywords.
|


In the NOTES ON DATA DERIVATION METHOD add to the table in section 2) two
lines so that the first part of section 2) reads:

| 2) Voltage Ranges:
|    Points for each curve must span the voltages listed below:
|
|       Curve                   Low Voltage             High Voltage
|       -----------             -----------             ------------
|       [Pulldown]              GND - POWER             POWER + POWER
|       [Pullup]                GND - POWER             POWER + POWER
|       [GND Clamp]             GND - POWER             GND + POWER
|       [POWER Clamp]           POWER                   POWER + POWER
|       [Series Current]        GND - POWER             GND + POWER
|       [Series MOSFET]         GND                     GND + POWER
|


In the NOTES ON DATA DERIVATION METHOD, section 5) is added:

| 5) Series MOSFET Table Extractions:
|    An extraction circuit is set up according to the figure below.  The
|    switch is configured into the 'On' state.  This assumes that the Vcc
|    voltage will be applied to the gate by internal logic.  Designate one
|    pin of the switch as the source node, and the other pin as the drain
|    node.  The Table Currents designated as Ids are derived directly as a
|    function of the Vs voltage at the source node as Vs is varied from 0
|    to Vcc.  This voltage is entered as a Vgs value as a consequence of
|    the relationship Vtable = Vgs = Vcc - Vs.  Vds is held constant by
|    having a fixed voltage Vds between the drain and source nodes.  Note,
|    Vds > 0 V.  The current flowing into the drain is tabulated in the table
|    for the corresponding Vs points.
|
|
|               +----------------------------------------+
|               |                                        |
|               |                   Ids = Table Current  |
|               |                   --->                 |
|               +---<---|     |--->----------+           |
|                   d   |_____| - s          | +         |
|                        --+-- Vgs       +---+---+  +----+----+
|                          | g  +        | Sweep |  |   Vs +  |
|                                        |   Vs  |  |Fixed Vds|
|                                        +---+---+  +----+----+
|                                            | -         |
|                                           GND         GND
|
|                  Example of Series MOSFET Table Extraction
|

******************************************************************************

ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

BIRDS 41 and 41.1:

Bus-switches (ex: 74LVX3L383 from NS or 74CBT3383 from TI) are
increasingly being used on high-speed boards. They cannot be
modelled by IBIS 2.1. 

This BIRD allows the definition of a series device which is
connected between any two pins. If this device is a non-linear
resistor (e.g. a diode), then it can be described by an I/V
table.  

One approach suggested was to force one of the pins to Vcc or
ground, and then reuse the [Pullup] and [Pulldown] tables.
This approach will not correctly model bus-switches.

So instead, a new keword [Series_Impedance] is defined. This
has a R_load keyword. For bus-switches, R_load should be set
to a value >> 5ohms in order to allow the Ron vs. bias voltage
(as given in application notes) curves be obtained.

The author would like to suggest an extra keyword [Impedance] to
"replace", or provide an alternative, to the pullup, pulldown,
etc. This keyword would have a mode subparameter, with
values Pullup, Pulldown and Hi-state. This would allow 3 sets of
measurements be included in the IBIS file, without any fiddly
subtaracting of curves, or confusing Vcc relativity.
 
As suggested by Chris Reid, a state entry is added to allow
crossbar switches be modelled. It is expected that the simulator
detect these states, then ask the user to choose one of them.
Is this information really in the right place??

Often a bus-switch is used to provide 3.3V to 5V translation.
If this is to be modelled in IBIS, then a second model must
be generated for Vcc=4.3V. Use the [Model selector] keyword
to allow the correct buffer be chosen.

Additional series RLC paths are defined in this BIRD.
An alternative solution would be to allow an arbitrary path be 
defined, similar to Bird 36.1 prior to the amputation of connector
support.
                             
BIRD41.2: 

The RLC proposal is retained.

The [Series Impedance] proposal is split into [Series Current] and [Series
MOSFET].  The [Series Current] represents a simple V/I relationship ACROSS
the series element and would be suitable for a series diode model.  This
model is sensitive to the actual pin assignment polarity.  The
[Series MOSFET] model representative of series switches needs some tables
which are specific to this device in order to provide consistency within
the IBIS architecture.  The tables need to be made relative to the positive
voltage rail.  One or more tables need to be provided under precisely defined
conditions.  The [Series MOSFET] model is assumed to be symmetrical and
not dependent on the which side "Pin 1" and "Pin 2" are designated.  These
individual considerations justify providing two separate keywords.

[On] and [Off] keywords are added under [Model] and are used when the 
Model_type is Series_switch.  This ensures that the model function is
clearly indicated by the Model_type subparameter, and the electrical
characteristics of the 'On' and 'Off' states are clearly indicated within
the model.  It might be argued that the Series_switch Model_type is already
redundant, but it may be necessary so that the Series_switch information
is properly stored.

Under [Component], a [Series Pin Mapping] is defined to map the series
pins with the Model_name and also with a Function Table Group designation.
For just series elements, this designator is not used and can be any
any alphanumeric word.  The Series element is assumed to be 'On'.  However, 
for actual series switch components, a common control often is used
for groups of switches that have their switching action sychronized.
The Function Table Group designator is used to associate those switches
that have sychronized switching action.  The [Series Switch Groups] keyword
is added to give the allowable combinations of sychronized switching
states for the set of groups defined.

A number of other details that have been considered are embedded in this
expanded proposal.  Most of the considerations relate to consistency and
compatibility with the existing IBIS syntax and implicit conventions.

Any shunt element can be provided by separate [Model]s.  This will include
the package parasitics on EACH of the pins.  The existing [Pin] keyword
is used for this purpose.  If clamping diodes exist, they would be 
entered as "Terminator" models and can be assigned to the appropriate
pin directly.  This may be a complication, but allows consistency with
the existing IBIS syntax.

C_comp is not defined for series elements.  It could be used as a residual
capacitance ACROSS the series element.

BIRD41.3:

BIRD41.3 is issued in response to some comments and suggestions made on May
14, 1997 by John Fitzpatrick regarding BIRD41.2.  Some other minor changes
are made.

C_comp is values is ignored in Series and Series Switch models because it 
is defined as a capacitance to ground.  Use [C Series] for any capacitance
needed ACROSS the pins.

While the range of the [Series MOSFET] tables are defined from a minimum
of GND to GND + POWER, the actual range of the derived model extends well
beyond GND + POWER based on the equations provided for Vds.  There may be 
undershoot conditions driving both sides of a MOSFET switch to values
below ground.  However the switch will be in its lowest impedance state,
and any analysis based either on truncated data at 0 V or extrapolated
data below 0 V will be sufficiently accurate.  Extending the ranges
beyond what is defined may result in significant extraction problems from
measurement if there exists clamping diodes in the physical switch.

It is clarified further that all of the models associated with the [Pin]
keyword are still used to define shunt elements such as Schotkey diodes
and capacitances on EACH pin of series device.  While this splits up
the electrical models, they would all be called under the [Component]
description.  The reason for this approach is that it just uses the
already existing IBIS structure.

[Series Switch Groups] keyword is now used to better describe the
allowable Function Table states.

Some additonal clarification is provided regarding defaulting some of
the undefined series discrete devices to a short circuit.

A restriction regarding Series_switch models is stated that there will
be no common electrical model spanning both the [On] and [Off] states.
The list of models which must be positioned below the [On] or [Off]
keywords is stated.  This will avoid some additional rules and
confusing interpretations if a particular keyword were positioned both
above and below the [On] or [Off] keyword.

BIRD41.4:

John Fitzpatrick suggested in a private note that models that can be
attached to Series or Series_switch models under the [Pin] table be
Terminator models.  Text is put in Other Notes under [Series Pin
Mapping] stating this restriction (and also including 'NC').  It is
a complication to allow Input or I/O models, and if the pin is connected
to a power rail, this can be done in a simulator dependent manner.

John also suggested expanding approved BIRD30.2 to include [Series Pin
Mapping] models to be included in the [Model Selector] keyword.  This 
could be used for selecting Series_switch models for Vcc = 5 V or
Vcc = 4.3 V when used in 3.3 to 5 V logic interface applications.  An
additional modification is included to make this change.  It makes sense
to capture within [Model Selector] all of the Model_names that can be
selected.  The [Series Pin Mapping] keyword defines new models that are
not listed under the [Pin] keyword.

BIRD41.5:

References to quadradic fitting for [Series MOSFET} based on two tables
are removed because the algorithms did not yield significant improvement
and usually caused other problems.  Also there was some extreme data
sensitivity issues when the data was near zero mA which would cause
much additional complexity.  The linear algorithm provided good
correlation when more data points were taken.  

The table extraction circuit is modified so that current through the 
device is sensed on the source side so that a leakage current to the 
substrate does not cause non-monotonic increasing values for higher
source voltages.

BIRD41.6:

[Series Pin Mapping] syntax is revised to define the columns in terms of
subparameters.  This is consistent with the [Pin], [Pin Mapping] and [Diff
Pin] keywords.  It also allows entering only three columns for Series models
and four columns for Series_switch models.  All of the other keywords allow
two selections for number of columns.  Parser development effort should be
reduced by maintaining consistency with other similarly formatted keywords.

BIRD41.7
The relationship for defining the drain to source current as a function of
drain to source voltage was incorrect.  A more rigorous explaination is 
provided in terms of actual ids, vds values and the information from the
table.

BIRD41.8
Some editorial corrections are made as part of the BIRD41.7 that are documented
in BIRD41.8 to simplify the discrete series element notation and to add 
[Series Pin Mapping] references under Usage Rules: of the [Model] keyword.

******************************************************************************

ANY OTHER BACKGROUND INFORMATION:

41   Submitted Feb 12, 1997 

41.1 Submitted Feb 17, 1997
     - Better explanation of State column
     - Define new [Series Impedance] keyword
     - Define series RLC path (to model passive device + parasitics)

41.2 Submitted May 14, 1997
     - Extensive revisions based on two IBIS meetings and other notes

41.3 Submitted May 15, 1997
     - Response to John Fitzpatricks comments

41.4 Submitted May 16, 1997
     - [Pin] model Terminator or NC restriction for series pins
     - [Model Selector] keyword addition to include [Series Pin Mapping] models.

41.5 Submitted May 22, 1997
     - Removed references to Quadradric fitting for [Series MOSFET] table
     - Changed VI extraction setup to prevent non-monotonic currents

41.6 Submitted May 28, 1997
     - Changed [Series Pin Mapping] syntax to conform with [Pin], [Pin Mapping]
       and [Diff Pin] syntax by including column headings as subparameters.
     - Added to [Series Switch Groups] the example for Bus Switch in the 
       [Series Pin Mapping] keyword
     - Made other miscellaneous editorial changes for consistency.

41.7 Submitted May 30, 1997
     - Corrects and Provides a more rigorous linear functional relationship
       for using the [Series MOSFET] table data.
     - Makes minor editorial corrections.

41.8 Approved June 12, 1997 conditional upon some editorial changes
     - Series elements changed to:
       [R Series], 
       [L Series], [Rl Series],
       [C Series], [Rc Series], [Lc Series]
     - Additional change of [Pin] to [Pin] and/or [Series Pin Mapping] under
       [Model]


 
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Date: Fri, 13 Jun 1997 17:32:11 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS BIRD42.3 Modeling Current Waveforms

To IBIS Committee:

BIRD42.3 contains changes made at the IBIS Open Forum Summit meeting on
June 12, 1997.  BIRD42.3 was discussed, but not voted on since some 
controversial issues arose that could not be resolved at the meeting.
Some of the discussion concerned the need for this additional functionality
for accuracy, and the problems associated with extracting good information
that was not redundant or contradictory.

Portions of BIRD42.3 which relate to editorial and example changes for the
[Rising Waveform] and [Falling Waveform] keywords only were accepted and will
be part of the editoral changes contained in IBIS Version 3.0.

The keyword [GND Current] is changed to [Pulldown Reference Current].
The keyword [POWER Current] is changed to [Pullup Reference Current].
Other related references in the text and diagram are modified accordingly.

These changes are made to reflect explicitly the reference rail for which
they are defined and also to allow addtional currents for the clamps in
the future.

Bob Ross
Interconnectix


******************************************************************************
******************************************************************************

BIRD ID#:      42.3
ISSUE TITLE:   Modeling Current Waveforms
REQUESTER:     C. Kumar, Cadence,  Bob Ross, Interconnectix
DATE SUBMITTED:   May 16, 1997, May 19, 1997, May 30, 1997, June 12, 1997
DATE ACCEPTED BY IBIS OPEN FORUM:     Pending

******************************************************************************
******************************************************************************

STATEMENT OF THE ISSUE:

Current into the power and ground rails are needed to give a more accurate
analysis for ground and power bounce analysis associated with simutaneous
switching.
 
******************************************************************************

STATEMENT OF THE RESOLVED SPECIFICATIONS:

Two current Waveform tables [Pulldown Reference Current] and [Pullup
Reference Current] are defined to be associated with [Rising Waveform] and
[Falling Waveform] are added.

Also some of the data associated with [Rising Waveform] and [Falling Waveform]
is modified to reflect a real situation.  The existing data in the 
specification was not realistic and gave incorrect guidance.

The waveform tables in the examples were generated from a real sample.


Replace this section:

|==============================================================================
|     Keywords:     [Rising Waveform], [Falling Waveform]
|     Required:     No
|     Description:  Describes the shape of the rising and falling edge
|                   waveforms of a driver.
|     Sub-Params:   R_fixture, V_fixture, V_fixture_min, V_fixture_max,
|                   C_fixture, L_fixture, R_dut, L_dut, C_dut
|     Usage Rules:  Each [Rising Waveform] and [Falling Waveform] keyword
|                   introduces a table of time vs. voltage points that
|                   describe the shape of an output waveform.  These
|                   time/voltage points are taken under the conditions
|                   specified in the R/L/C/V_fixture and R/L/C_dut
|                   subparameters.  The table itself consists of
|                   one column of time points, then three columns of
|                   voltage points in the standard typ, min, and max format.
|                   The four entries must be placed on a single line and
|                   must be separated by at least one white space or tab
|                   character.  All four columns are required.  However, data
|                   is only required in the typical column.  If minimum
|                   or maximum data is not available, use the reserved word
|                   "NA".  The first value in the time column need not be '0'.
|                   Time values must increase as one parses down the table.
|                   The waveform table can contain a maximum of 100 data
|                   points.  A maximum of 100 waveform tables are allowed per
|                   model.  Note that for backwards compatibility, the existing
|                   [Ramp] keyword is still required.  The data in the waveform
|                   table is taken with the effects of the C_comp parameter 
|                   included.
|
|                   A waveform table must include the entire waveform;
|                   i.e., the first entry (or entries) in a voltage column
|                   must be the DC voltage of the output before switching
|                   and the last entry (or entries) of the column must be
|                   the final DC value of the output after switching.  Each 
|                   table must contain at least two entries.  Thus, numerical 
|                   values are required for the first and last entries of any 
|                   column containing numerical data.
|
|                   A [Model] specification can contain more than one rising
|                   edge or falling edge waveform table.  However, each new
|                   table must begin with the appropriate keyword and sub-
|                   parameter list as shown below.  If more than one rising or
|                   falling edge waveform table is present, then the data in
|                   each of the respective tables must be time correlated.
|                   In other words, the rising (falling) edge data in each
|                   of the rising (falling) edge waveform tables must be
|                   entered with respect to a common reference point on the
|                   input stimulus waveform.
|
|                   The 'fixture' subparameters specify the loading
|                   conditions under which the waveform is taken.  The R_dut,
|                   C_dut, and L_dut subparameters are analogous to the
|                   package parameters R_pkg, C_pkg, and L_pkg and are used
|                   if the waveform includes the effects of pin
|                   inductance/capacitance.  The diagram below shows the
|                   interconnection of these elements.
|
|                      PACKAGE            |   TEST FIXTURE
|       _________                         |
|      |  DUT    |   L_dut   R_dut        | L_fixture  R_fixture
|      |  die    |---@@@@@--/\/\/\--o-----|--@@@@---o---/\/\/\----- V_fixture
|      |_________|                  |     |         |
|                                   |     |         |
|                                   |     |         |
|                            C_dut ===    |        === C_fixture
|                                   |     |         |
|                                   |     |         |
|                                  GND    |        GND
|
|                   Only the R_fixture and V_fixture subparameters are
|                   required, the rest of the subparameters are optional.
|                   If a subparameter is not used, its value defaults to
|                   zero.  The subparameters must appear in the text after
|                   the keyword and before the first row of the waveform
|                   table.
|
|                   V_fixture defines the voltage for typ, min, and max
|                   supply conditions.  However, when the fixture voltage
|                   is related to the power supply voltages, then the
|                   subparameters V_fixture_min and V_fixture_max can
|                   be used to further specify the fixture voltage for
|                   min and max supply voltages.
|------------------------------------------------------------------------------
[Rising Waveform]
R_fixture = 500
V_fixture = 5.0
V_fixture_min = 4.5           |Note, R_fixture is connected to Vcc
V_fixture_max = 5.5           |Specified, but not used in this example
C_fixture = 50p
L_fixture = 2n
C_dut = 7p
R_dut = 1m
L_dut = 1n
|Time     V(typ)     V(min)     V(max)
 0.0ns     0.3        0.5         NA
 0.5ns     0.3        0.5         NA
 1.0ns     0.6        0.7         NA
 1.5ns     0.9        0.9         NA
 2.0ns     1.5        1.3         NA
 2.5ns     2.1        1.7         NA
 3.0ns     3.0        2.7         NA
 3.5ns     3.2        3.0         NA
|
[Falling Waveform]
R_fixture = 50
V_fixture = 0
|Time     V(typ)     V(min)     V(max)
 10.0ns     3.2        3.0         NA
 10.5ns     3.0        2.7         NA
 11.0ns     2.1        1.7         NA
 11.5ns     1.5        1.3         NA
 12.0ns     0.9        0.9         NA
 12.5ns     0.6        0.7         NA
 13.0ns     0.3        0.5         NA
 13.5ns     0.3        0.5         NA
|


Insert this new [Rising Waveform] and [Falling Waveform] section and new
examples and text changes noted by "|*" lines.  A note about C_comp is
desinated by the ""|**" lines, per BIRD42.2 change.  Add the new keyword
[Pulldown Reference Current] and [Pullup Reference Current] section and examples.


|==============================================================================
|     Keywords:     [Rising Waveform], [Falling Waveform]
|     Required:     No
|     Description:  Describes the shape of the rising and falling edge
|                   waveforms of a driver.
|     Sub-Params:   R_fixture, V_fixture, V_fixture_min, V_fixture_max,
|                   C_fixture, L_fixture, R_dut, L_dut, C_dut
|     Usage Rules:  Each [Rising Waveform] and [Falling Waveform] keyword
|                   introduces a table of time vs. voltage points that
|                   describe the shape of an output waveform.  These
|                   time/voltage points are taken under the conditions
|                   specified in the R/L/C/V_fixture and R/L/C_dut
|                   subparameters.  The table itself consists of
|                   one column of time points, then three columns of
|                   voltage points in the standard typ, min, and max format.
|                   The four entries must be placed on a single line and
|                   must be separated by at least one white space or tab
|                   character.  All four columns are required.  However, data
|                   is only required in the typical column.  If minimum
|                   or maximum data is not available, use the reserved word
|                   "NA".  The first value in the time column need not be '0'.
|                   Time values must increase as one parses down the table.
|                   The waveform table can contain a maximum of 100 data
|                   points.  A maximum of 100 waveform tables are allowed per
|                   model.  Note that for backwards compatibility, the existing
|                   [Ramp] keyword is still required.  The data in the waveform
|                   table is taken with the effects of the C_comp parameter 
|                   included.
|
|                   A waveform table must include the entire waveform;
|                   i.e., the first entry (or entries) in a voltage column
|                   must be the DC voltage of the output before switching
|                   and the last entry (or entries) of the column must be
|                   the final DC value of the output after switching.  Each 
|                   table must contain at least two entries.  Thus, numerical 
|                   values are required for the first and last entries of any 
|                   column containing numerical data.
|
|                   A [Model] specification can contain more than one rising
|                   edge or falling edge waveform table.  However, each new
|                   table must begin with the appropriate keyword and sub-
|                   parameter list as shown below.  If more than one rising or
|                   falling edge waveform table is present, then the data in
|                   each of the respective tables must be time correlated.
|                   In other words, the rising (falling) edge data in each
|                   of the rising (falling) edge waveform tables must be
|                   entered with respect to a common reference point on the
|                   input stimulus waveform.
|
|                   The 'fixture' subparameters specify the loading
|                   conditions under which the waveform is taken.  The R_dut,
|                   C_dut, and L_dut subparameters are analogous to the
|                   package parameters R_pkg, C_pkg, and L_pkg and are used
|                   if the waveform includes the effects of pin
|                   inductance/capacitance.  The diagram below shows the
|                   interconnection of these elements.
|
|                      PACKAGE            |   TEST FIXTURE
|       _________                         |
|      |  DUT    |   L_dut   R_dut        | L_fixture  R_fixture
|      |  die    |---@@@@@--/\/\/\--o-----|--@@@@---o---/\/\/\----- V_fixture
|      |_________|                  |     |         |
|                                   |     |         |
|                                   |     |         |
|                            C_dut ===    |        === C_fixture
|                                   |     |         |
|                                   |     |         |
|                                  GND    |        GND
|
|*                  NOTE:  The use of L_dut, R_dut, and C_dut is strongly
|*                  discouraged in developing Waveform data from simulation
|*                  models.  Some simulators may ignore these parameters
|*                  because they may introduce numerical time constant
|*                  artifacts.
|*                  
|                   Only the R_fixture and V_fixture subparameters are
|                   required, the rest of the subparameters are optional.
|                   If a subparameter is not used, its value defaults to
|                   zero.  The subparameters must appear in the text after
|                   the keyword and before the first row of the waveform
|                   table.
|
|                   V_fixture defines the voltage for typ, min, and max
|                   supply conditions.  However, when the fixture voltage
|                   is related to the power supply voltages, then the
|                   subparameters V_fixture_min and V_fixture_max can
|                   be used to further specify the fixture voltage for
|                   min and max supply voltages.
|*
|*                  NOTE:  Test fixtures with R_fixture and V_fixture, 
|*                  V_fixture_min, and V_fixture_max only are strongly 
|*                  encouraged because they provide the BEST set of data
|*                  needed to produce the best model for simulation.  C_fixture
|*                  and L_fixture can be used to produce waveforms which 
|*                  describe the typical test case setups for reference.
|**
|**                 All tables assume that the die capacitance is included.
|**                 Potential numerical problems associated with processing
|**                 the data using the effective C_comp for effective die
|**                 capacitance may be handled differently among simulators.
|**
|------------------------------------------------------------------------------
|*** New Example Below:
[Rising Waveform]
R_fixture = 50
V_fixture = 0.0
| C_fixture = 50p        | These are shown, but are generally not recommended
| L_fixture = 2n
| C_dut = 7p
| R_dut = 1m
| L_dut = 1n
| Time            V(typ)              V(min)              V(max)
   0.0000S       25.2100mV           15.2200mV           43.5700mV
   0.2000nS       2.3325mV           -8.5090mV           23.4150mV
   0.4000nS       0.1484V            15.9375mV            0.3944V
   0.6000nS       0.7799V             0.2673V             1.3400V
   0.8000nS       1.2960V             0.6042V             1.9490V
   1.0000nS       1.6603V             0.9256V             2.4233V
   1.2000nS       1.9460V             1.2050V             2.8130V
   1.4000nS       2.1285V             1.3725V             3.0095V
   1.6000nS       2.3415V             1.5560V             3.1265V
   1.8000nS       2.5135V             1.7015V             3.1600V
   2.0000nS       2.6460V             1.8085V             3.1695V
| ...
  10.0000nS       2.7780V             2.3600V             3.1670V
|
[Falling Waveform]
R_fixture = 50
V_fixture = 5.5
V_fixture_min = 4.5           
V_fixture_max = 5.5 
| Time            V(typ)              V(min)              V(max)
   0.0000S        5.0000V             4.5000V             5.5000V
   0.2000nS       4.7470V             4.4695V             4.8815V
   0.4000nS       3.9030V             4.0955V             3.5355V
   0.6000nS       2.7313V             3.4533V             1.7770V
   0.8000nS       1.8150V             2.8570V             0.8629V
   1.0000nS       1.1697V             2.3270V             0.5364V
   1.2000nS       0.7539V             1.8470V             0.4524V
   1.4000nS       0.5905V             1.5430V             0.4368V
   1.6000nS       0.4923V             1.2290V             0.4266V
   1.8000nS       0.4639V             0.9906V             0.4207V
   2.0000nS       0.4489V             0.8349V             0.4169V
| ...
  10.0000nS       0.3950V             0.4935V             0.3841V
|
|==============================================================================
|     Keywords:     [Pulldown Reference Current], [Pullup Reference Current] 
|     Required:     No
|     Description:  Describes the shape of the rising and falling edge
|                   current waveforms of a GND and POWER nodes, respectively.
|     Usage Rules:  Each [Pulldown Reference Current] and [Pullup Reference
|                   [Current] keyword is
|                   positioned under the [Rising Waveform] (for rising
|                   waveform currents) and [Falling Waveform (for falling
|                   waveform currents.  The keywords are followed by a table
|                   of time vs. current points that
|                   describe the shape of a current waveform.  These
|                   time/current points are taken under the conditions
|                   specified in the [Rising Waveform] or [Falling Waveform]
|                   R/L/C/V_fixture subparameters.  The table itself consists
|                   of one column of time points, then three columns of
|                   current points in the standard typ, min, and max format.
|                   The four entries must be placed on a single line and
|                   must be separated by at least one white space or tab
|                   character.  All four columns are required.  However, data
|                   is only required in the typical column.  If minimum
|                   or maximum data is not available, use the reserved word
|                   "NA".  The first value in the time column need not be '0'.
|                   Time values must increase as one parses down the table.
|                   The waveform table can contain a maximum of 100 data
|                   points.  A maximum of 100 waveform tables are allowed per
|                   model.
|
|                   A waveform table must include the entire waveform;
|                   i.e., the first entry (or entries) in a current column
|                   must be the DC current before switching
|                   and the last entry (or entries) of the column must be
|                   the final DC value after switching.  Each 
|                   table must contain at least two entries.  Thus, numerical 
|                   values are required for the first and last entries of any 
|                   column containing numerical data.
|
|                   A [Model] specification can contain more than one rising
|                   edge or falling edge waveform table.  However, each new
|                   table must begin with the appropriate keyword and sub-
|                   parameter list as shown below.  If more than one rising or
|                   falling edge waveform table is present, then the data in
|                   each of the respective tables must be time correlated.
|                   In other words, the rising (falling) edge data in each
|                   of the rising (falling) edge waveform tables must be
|                   entered with respect to a common reference point on the
|                   input stimulus waveform.
|
|                   Each [Pulldown Reference Current] and [Pullup Reference
|                   [Current] table must be
|                   time correlated with its associated [Rising Waveform]
|                   or [Falling Waveform] table.
|
|                   The diagram below illustrates the complete model with
|                   respect to the [Rising Waveform] and [Falling Waveform]
|                   subparameters.  The diagram also illustrates the direction
|                   of positive [Pulldown Reference Current] and [Pullup
|                   Reference Current] current flow by the notation I_PULLDOWN
|                   and I_PULLUP.
|
|        PULLUP REFERENCE
|              |
|           |  |
|  I_PULLUP |  |
|           v  |          PACKAGE            |   TEST FIXTURE
|          ____|____                         |
|         |  DUT    |   L_dut   R_dut        | L_fixture  R_fixture
|         |  die    |---@@@@@--/\/\/\--o-----|--@@@@---o---/\/\/\--- V_fixture
|         |_________|                  |     |         |
|              |                       |     |         |
|            ^ |                       |     |         |
| I_PULLDOWN | |                C_dut ===    |        === C_fixture
|            | |                       |     |         |
|              |                       |     |         |
|       PULLDOWN REFERENCE            GND    |        GND
|
|
|                   The 'fixture' subparameters specify the loading
|                   conditions under which the waveform is taken.  The R_dut,
|                   C_dut, and L_dut subparameters are analogous to the
|                   package parameters R_pkg, C_pkg, and L_pkg and are used
|                   if the waveform includes the effects of pin
|                   inductance/capacitance.
|
|                   NOTE: For computation purposes, the effect of the 
|                   L_dut, R_dut, and C_dut subparameters will be ignored.
|                   It is strongly recommended that they not be used, if
|                   possible.  Furthermore, it is strongly recommended that
|                   the 'fixture' not use any L_fixture or C_fixture 
|                   component.
|                 
|                   Because of an assumption that the currents into the 
|                   Pulldown Reference, Pullup Reference nodes and output
|                   nodes must sum to zero, only the [Pullup Reference
|                   Current] or [Pulldown Reference Current] tables are
|                   needed.  The output
|                   node current is available from the test fixture and 
|                   output waveform data.  However, both current
|                   waveform tables are permitted.  Similarly, an Open model
|                   device such as Open_drain or and ECL device such as 
|                   Output_ECL may not need any current waveform table.
|                   However, each or both are still permitted.  It is 
|                   simulator dependent which set of data takes precedence
|                   in case of redundant information.
|
|------------------------------------------------------------------------------
[Rising Waveform]
| ...
| ...            | Rising Waveform subparameters and table
| ...
[Pulldown Reference Current]
| Time            I(typ)              I(min)              I(max)
   0.0000S     -338.4000uA         -188.6000uA         -635.9000uA
   0.2000nS      -2.0160mA         -123.4000uA           -6.2360mA
   0.4000nS      -2.3650mA           -3.5670mA          -11.0600mA
   0.6000nS      -7.2070mA           -5.1150mA          -12.0600mA
   0.8000nS      -7.4570mA           -4.9160mA          -17.1600mA
   1.0000nS      -8.2950mA           -3.9180mA          -19.7900mA
   1.2000nS      -9.5720mA           -3.5720mA           -8.2330mA
   1.4000nS     -10.5400mA           -3.5850mA           -2.9600mA
   1.6000nS      -7.8290mA           -3.8150mA           -1.4140mA
   1.8000nS      -4.6260mA           -3.9860mA           -1.1420mA
   2.0000nS      -2.3870mA           -4.1520mA           -1.1250mA
| ...
  10.0000nS    -388.4000uA         -135.3000uA         -964.2000uA
|
[Pullup Reference Current]
| Time            I(typ)              I(min)              I(max)
   0.0000S      842.5000uA          493.0000uA            1.5070mA
   0.2000nS       6.6700mA            3.2490mA            9.7430mA
   0.4000nS      12.9000mA            4.6150mA           26.3100mA
   0.6000nS      25.9800mA           11.3000mA           42.5700mA
   0.8000nS      35.3200mA           19.0900mA           58.4600mA
   1.0000nS      43.2400mA           24.2100mA           70.4200mA
   1.2000nS      49.7700mA           28.9700mA           64.7800mA
   1.4000nS      55.3400mA           32.9800mA           64.7600mA
   1.6000nS      56.4000mA           36.3800mA           64.3900mA
   1.8000nS      56.3100mA           39.1500mA           64.4500mA
   2.0000nS      56.2000mA           41.3300mA           64.5700mA
| ...
  10.0000nS      55.9500mA           47.3500mA           64.3200mA
|
[Falling Waveform]
| ...
| ...            | Falling Waveform subparameters and table
| ...
[Pulldown Reference Current]
| Time            I(typ)              I(min)              I(max)
   0.0000S     -157.4000uA          -86.9600uA         -291.0000uA
   0.2000nS     -34.6000mA          -17.1000mA          -48.6100mA
   0.4000nS     -41.5400mA          -20.8600mA          -70.7200mA
   0.6000nS     -60.5500mA          -30.4800mA          -96.8400mA
   0.8000nS     -77.7500mA          -41.5500mA         -107.4000mA
   1.0000nS     -88.1500mA          -52.0000mA         -115.5000mA
   1.2000nS     -92.9400mA          -60.9400mA         -110.6000mA
   1.4000nS     -96.9700mA          -68.0800mA         -107.1000mA
   1.6000nS     -98.1100mA          -72.7800mA         -106.4000mA
   1.8000nS     -96.5100mA          -75.9600mA         -106.0000mA
   2.0000nS     -95.1600mA          -77.7100mA         -105.9000mA
| ...
  10.0000nS     -94.3700mA          -81.4700mA         -106.3000mA
[Pullup Reference Current]
| Time            I(typ)              I(min)              I(max)
   0.0000S      157.4000uA           86.8500uA          291.0000uA
   0.2000nS      17.4600mA           10.0440mA           22.5200mA
   0.4000nS      11.7300mA            8.2320mA           18.0200mA
   0.6000nS      11.0800mA            6.8680mA           15.2900mA
   0.8000nS      10.1700mA            6.2700mA           11.1900mA
   1.0000nS       8.3370mA            6.2160mA           14.7000mA
   1.2000nS       6.2100mA            5.7840mA            9.4580mA
   1.4000nS       6.9920mA            5.3040mA            5.7280mA
   1.6000nS       8.2280mA            4.6130mA            4.8490mA
   1.8000nS       5.5850mA            3.8730mA            4.3310mA
   2.0000nS       4.0180mA            3.2190mA            4.1990mA
| ...
  10.0000nS       2.2710mA            1.3390mA            3.9900mA
|
******************************************************************************

ANALYSIS PATH/DATA THAT LED TO SPECIFICATION:

Some additonal clarification information is needed in the original [Rising
Waveform] and [Falling Waveform] keyword.  A better example needs to 
be supplied because the existing example illustrates some bad practices.

The current waveform specification is needed to better define the
currents in the GND and POWER nodes during switching.  Currently the
allocation of currents into these nodes is simulator-algorithm dependent.
There is no information regarding paths directly from POWER to GND as
might occur in a make-before-break transition implementation that exists
in some CMOS devices.

The L_dut, R_dut, and C_dut fixture parameters are deleted from the 
new keywords.  While actual package electrical characteristic may exist,
there effects are negligible for current waveforms.  Moreover, this 
level of detail has proven in many case to actually reduce accuracy in
simulation because of numerical time constant considerations.  

Suggestions encouraging resistive-only fixture loads are embedded in this
proposal to encourage generating data that is most suitable for developing
models that may be used by most simulators.  The new examples reflect this
practice.

BIRD42.1:

By restricting the already correlated current waveforms to be under the
current keyword, several simplifications can be made:

   Eliminate [GND Rising Waveform], [GND Falling Waveform], [POWER
   Rising Waveform], [POWER Falling Waveform]

   Instead, add as a result, [GND Current] and [POWER Current].  These
   keywords are restricted to directly under their corresponding [Rising 
   Waveform] and [Falling Waveform] tables for the particular waveform
   of interest.  

   Eliminate all references to subparameters - The current tables are
   based on the [Rising Waveform] and [Falling Waveform] table subparameters.

All of the proposed functionality remains.

BIRD42.1:

Some editoral cleanup is done and a note concerning numerical artifacts
associated with C_comp is added under the [Rising Waveform] and [Falling
Waveform] keyword description is added.  Calculating current as a function
of changing voltage across a capacitance is a numerically sensitive process.

BIRD42.2, BIRD42.3:

More editorial Cleanup.  Change [GND Current] to [Pulldown Reference Current].
Change [POWER Current] to [Pullup Reference Current].  These changes reflect
more explicitly the power rails for which the current waveforms are
defined.  They also allow working with ECL device models.

******************************************************************************

ANY OTHER BACKGROUND INFORMATION:

This proposal is based on discussion initiated by C. Kumar at the IBIS 
Open Forum Meeting on May 9, 1997

Part of the introduction material for BIRD42.1 includes this statement:
"Also, I acknowledge that even with this more detailed set of data, REAL
power and bounce analsis may be influenced by factors BEYOND Output buffer
switching.  Scott McMorrow correctly points out that some internal 
circuitry such as internal clock drivers are already internally loaded
and may not have external connections.  There may be significant
movement of currents due to these internal elements that can interact
and affect the internal bounce of common internal ground and power busses.
So beware that bounce analysis may be more dependent on (undocumented)
internal construction (sharing of common busses) and undocumented internal
switching effects.  The IBIS Model may UNDERESTIMATE the true bounce
effects."





 
From owner-ibis  Fri Jun 13 18:46:02 1997
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Date: Fri, 13 Jun 1997 18:45:00 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis@vhdl.org
Subject: IBIS Version 3.0 Ratification

To IBIS Fans:

IBIS Version 3.0 was formally ratified at the EIA/IBIS Open Forum Summit
Meeting held on June 12, 1997 per modifications discussed during the
meeting and per approved BIRDs.  Version 3.0 with appropriate revisions
will be put under /pub/ibis/ver3.0 shortly and will be the basis for
beginning the editorial correction process leading to Version 3.1.

Bob Ross
Interconnectix
 
From owner-ibis  Tue Jun 17 08:26:27 1997
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To: ibis@vhdl.org
Subject: IBIS Face to Face Meeting Minutes
Date: Tue, 17 Jun 1997 08:25:31 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>




 VOTING MEMBERS AND 1997 PARTICIPANTS LIST:
 AMP                            Jeff Walden
 Applied Simulation Technology  Dileep Divekar*, Norio Matsui*, Raj Raghuram
 Cadence Design & UniCAD        C. Kumar*, Don Telian, Cameron Seitz*
 Cypress                        Bruce Wenniger
 Digital Equipment Corp.        Jeff Chu
 Hewlett Packard, EEsof         Karl Kachigan*, Henry Wu
 High Design Technology         (Razvan Ene)
 HyperLynx                      Kellee Crisafulli, Steve Kaufer*
 INCASES                        Olaf Rethmeier, Werner Rissiek*
 Intel Corporation              Stephen Peters*, Arpad Muranyi*, Henry Maramis*,
				Will Hobbs*
 Interconnectix                 Bob Ross*
 Mitsubushi                     Tam Cao, Hoang Nguyen*
 Motorola                       Ahmed Omer
 National Semiconductor         Syed Huq*, Cheng-Yang Kao, Mike Bristol,
				Peter Laflamme, Kevin Smith
 NCR                            Dave Moxley, Richard Mellitz
 NEC                            (Hiroshi Matsumoto)
 Quad Design/Viewlogic          Jon Powell, Chris Rokusek*, Peivand Tehrani*
 Quantic EMC                    (Mike Ventham)
 Texas Instruments              Thomas Fisher*
 Thomson-CSF/SCTF               (Jean LeBrun)
 VeriBest                       Ian Dodd, William Bell
 VLSI Technology                Harish Patel*, D.C. Sessions*
 Zuken-Redac                    (John Berrie)
 
 OTHER PARTICIPANTS IN 1997:
 3M                             Fran Hart
 Actel                          Scott Schlachter
 Acuson & Free Model Foundation Richard Munden*
 Alcatel                        John Fitzpatrick
 Ansoft                         Eric Bogatin
 Apteq Design Systems           Dan FitzPatrick 
 Compaq                         Weston Beal, Mark Leonard*
 EIA                            Patti Rusher*
 EMC                            Fabrizio Zanella
 Hitachi                        Saburo Hojo*, Yasushi Ogawa* 
 IBM                            Brad Herrman*
 Interface Technology           Dan Waterloo* 
 Micron Technology              Brian Johnson                      
 Molex                          Gus Panella
 North Carolina State U.        (Michael Steer)
 S3, Inc.                       Porsh Shih, Sarathy Sribhashyam
 Symmetry                       Andy Hughes*
 TRW                            Ray Steele*
 Ultratest International        Charles Im
 Zeelan Technology              George Opsahl 

 In the list above, attendees at the meeting are indicated by *.  Principal
 members or other active members who have not attended are in parentheses.
 Participants who no longer are in the organization are in square brackets.

 Upcoming Meetings:  The bridge numbers for future IBIS teleconferences are as
 follows:
     
   Date               Bridge Number     Reservation #    Passcode
   Friday, July 11    (916) 356-9200     2-160894        4369865


 All meetings are 8:00 AM to 9:55 AM Pacific Time.  We try to have agendas out 
 7 days before each open forum and meeting minutes out within 7 days after.  
 When you call into the meeting, ask for the IBIS Open Forum hosted by Will 
 Hobbs and give the reservation number and passcode.
 
 NOTE: "AR" = Action Required.

 -------------------------------- MINUTES -------------------------------------

 INTRODUCTIONS AND MEETING QUORUM
 Twenty eight people attended the EIA/IBIS Open Forum Summit and introduced
 themselves.  Bob Ross thanked Patti Rusher of EIA for handling the meeting
 details including arranging for the fine meals and refreshments.


 PRESS AND WEB PAGE UPDATES
 Bob Ross reported two articles in the June 1997 issue of Computer Design by
 Charles Small which mention IBIS: "Demand for IBIS Models Begins to Take 
 Off", p. 34 and "Achieving Signal Integrity Demands Rethinking the Design
 Process", pp. 34-40.

 Bob Ross also submitted after the meeting these articles which refer to IBIS:
 "Signal Integrity: More than a Board Issue" in Electrical Engineering Times,
 by John Colfield and Greg Doyle on June 1997, p. 80; and "Analysis Tools 
 Target PC-Board Design-Cycle", by Cheryl Ajluni in a Supplement to Electronic 
 Design, May 27, 1997, pp. 57-63.


 NEW MODELS AVAILABLE, LIBRARY UPDATE
 Syed Hug has submitted prior to the meeting a new National URL for IBIS Models:

   http://www.national.com/models

 Bob Ross submitted prior to the meeting that Siemens has IBIS models at

   http://www.siemens.de/Semiconductor/products/ICs/31/3177.htm

 Also Bob submitted that the Micron link has changed to an FTP site

   ftp://www.micron.com/pub/ibis

 Cypress has more models in the Timing Technologies section.  Motorola also
 has added some models in the Power PC library.

 John Powell has updated the EIA/IBIS Web Site Models section with the new
 links.


 DESIGN AUTOMATION CONFERENCE (DAC) 1997 IBIS MEETING
 The morning session consisted of presentations and discussions by several
 individuals and the election of EIA/IBIS Open Forum Committee Officers
 for 1997-1998.  While this is not intended to be comprehensive, some notes
 about the presentations are given.  Among the casual conversation, Patti
 Rusher indicated good traffic at the EIA booth at DAC and continued interest
 in IBIS.  She also had reprints of Syed Huq's December 1996 Article in 
 Electronic Design: "Ease System Simulation With IBIS Device Models".  The
 IBIS poster at the Booth looked very nice and listed the participating
 companies.

 
 IBIS YEARLY REVIEW, Bob Ross, Interconnectix
 Bob summarized the technical features of IBIS from the "Core" Version 1.1
 in June, 1993, "Extensions" of Version 2.1 form June, 1994 through December,
 1995, and the proposed "Refinements" of June 1997.  International Progress
 includes IBIS as a work item proposal 93/46/NP in TC93 of IEC, a pending
 French proposal including EMC, Japanese activities at a more detailed level
 through EIAJ on the I/O Interface Model for Integrated Circuits and the fact
 that IBIS is referenced in EDIF 4 0 0.  

 IBIS models are now widely available from many companies (with demand for
 IBIS models greater than Spice models).  Eleven companies have model sites
 for downloading (up from four a year ago), and three commercial companies
 provide libraries and services - amounting to around 10,000 IBIS models.
 There have been s2ibis2 and ibischk2 improvements.  Four companies read
 IBIS models directly, and many others translate models from the IBIS format.
 IBIS is accepted and spreading!

 Two articles appeared on IBIS from Committee members, and Howard Johnson of
 "High Speed Digital Design, A Handbook of Black Magic" fame has written 
 favorably about IBIS.  The Committee continues to be active with over 20 
 official members and a 300+ mailing list.

 The major challenges include a clearer editorial release of IBIS Version 3.1,
 ibischk3 parser development, and improved information including the Cookbook,
 more articles and information.  Good modeling practices need to be conveyed,
 and Bob suggests that IBIS model developers attempt to work more closely 
 with CAE vendors who parse IBIS models.  s2ibis improvements are needed.
 There also continue to exist technical improvements consistent with evolving
 technology, and continued international involvement.  The major thrust is
 now for stabilization, cleanup, and information about IBIS.


 MITSUBISHI IBIS MODELING ACTIVITIES (4/96-5/97), Hoang Nguyen, Mitsubishi
 Semiconductor America, Inc.
 Hoang indicated that Mitsubishi provides IBIS, HSPICE, HDL models to support
 customers for DRAM and application-specific memory products.  A Web page is
 being created to access the models.  He showed the support system for models
 in North America and for Japan/Asian and European customers.  Mitsubishi
 IBIS models are Version 2.1 and are based on s2ibis2 processing of Spice 
 models validated by chip designers.  The response to IBIS models is positive.
 
 Hoang noted that some vendors have their own IBIS to Spice translators to
 process IBIS models in Spice simulation environments.  Hoang noted that some
 customers want test loads for waveforms and ramp different from the cookbook
 recommended test loads.  Hoang also noted that he hoped IBIS Version 3.0
 contained an index page for quick referencing of major keywords or
 definitions.
 

 CONSTRUCTION OF REAL EXAMPLE OF INPUT/OUTPUT INTERFACE MODEL FOR INTEGRATED
 CIRCUITS, Saburo Hojo, Hitachi.
 Saburo, (an original author of the Electronic Industries Association of
 Japan (EIAJ) I/O buffer modedling standard) gave an overview.  The proposal 
 originates from the Technical  Standardization Center, Committee on Semiconductor 
 Devices, I/O Interface Model Project Group.  The model is expressed as a network 
 and covers the IC Buffer and Package.  Its advantage are that the transistor 
 descriptions are in a table form to protect process information, and the 
 network descriptions can show details including power/ground circuitry
 for bounce analysis.  Saburo showed networks and examples of MOS one, two
 and three dimensional table formulations.  A real construction example was
 shown for a 16M DRAM in a TSOP 50 pin package.  Waveform tables to drive
 the gates were derived from simulation.  The power/ground connections were
 derived from an RC network from the physical layout.  The MOS transistor
 table and parameters were derived from simulation results.  The package
 was derived from the layout as an LMRC network (with coupling).  
 
 Saburo noted the size of the model as 460k bytes and broke down the lines 
 needed: I/O buffer Network (36), Waveforms to Output Buffer (283), Power/
 Ground Network (5428), Table Model (2080), Package Network (4639).  It
 currently takes one week to construct manually.  

 Stephen Peters asked how fast the EIAJ model simulates, and if any SPICE
 vendor support the table driven MOS transistor descriptions.  Saburo replied
 that the simulation speed depends on the size of the model (the 460K byte
 example simulated no faster than a full spice model) and that Metasoft is
 planning on supporting the table driven MOS descriptions.
 
 Concerning future work, Saburo noted some current limitations in the format.  
 Version 1.0 of the draft is expected September 1997 and final approval is
 planned December 1997 by EIAJ.
 
 (Saburo also has generated Hitachi IBIS models for customers.)


 SIMULATOR ALGORITHMS, Bob Ross, Interconnectix 
 Bob showed samples indicating that we need to know what is inside the model
 since simulator algorithms may be different concerning Ramp based models
 and Waveform table based models.  Bob showed by a simple example that there
 are a number of choices based on linear (ramp) transitions to simulate the
 data - all giving different results.  The implied IBIS model topology
 corresponds to a Current-based model, but its dual corresponds to a Voltage-
 based model.  Non-linear transitions can be derived from Waveform information 
 to give better fits corresponding to an IBIS reference topology.  Other 
 internal details such as C_comp handling, ramp rounding, and package details
 may be handled differently among simulators.  So, at the detailed level, IBIS
 models probably will be treated differently by simulators.  Even with these
 differences, the accuracy by all simulators has still proven to be sufficient
 for general board level analysis situations where IBIS models are very 
 suitable. 
 
 C. Kumar added some discussion about using power and ground current table
 information to improve accuracy.  More information can always be used.  He
 also noted that reactive elements in the *_fixture and *_dut should be 
 avoided because they lead to numerical difficulties.  C_comp handling, while
 needed, also leads to dV/dt numerical difficulties (spikes) since derivatives
 are handled using discrete time step algorithms.


 EIAJ IC PACKAGE MODEL STANDARDIZATION ACTIVITIES, Norio Matsui, Applied 
 Simulation Technology, Ltd.
 Norio stated that under the Technical Standardization Center exists the 
 Committee on Semiconductor Packages, Package Electrical Characterization
 Project Group.  This group consists of 18 members, headed by Hitachi, and
 has had six monthly one-half day face-to-face meetings.  Norio showed some
 preliminary research results of simulator and simulation investigations.
 Data book L and C parameters are undefined or too high.  Concerning radiation
 noise, 30% to 70% of PCB surfaces are covered with IC packages.  Radiation
 can be generated from horizontal lead frames, vertical lead frames and 
 power/ground planes. Both electrical and physical models are required.
 
 Model standardization for ceramic packages, plastic packages and MCMs for
 memory models is considered.  A BGA structure would include signal traces,
 ground and Vcc planes.  These would be described via nodal networks in
 the EIAJ table format.  Additional information includes frequency and 
 position of planes.  Among the rules, avoid using node 0 or GND/gnd - 
 ground should be floating.  Self R, L, C, (G) for lead frames and planes
 are provided, and mutual coupling for L and C for long distances is not
 necessary.  So the full LCR matrix is not needed.  Tools need to extract
 the user models from the total model.  Tools need to extract macro-models
 from segmented, detailed network models for simplified modeling for a large
 number of pins.  Under discussion is how to make models for huge pin counts
 for signal and power/grounds.  All pin model is still required.  Some
 techniques include using symmetry, limiting coupling range, connect all or
 grouped ground/power pins for BGA, and macromodels by one segment per pin
 at a frequency.
 
 Norio showed simulation results to complement Saburo Hojo's presentation 
 based on the EIAJ Table Spice and package model using an Applied Simulation
 Technology implementation.  The schedule tracks the I/O IMIC activity with
 June 1997 for Draft 1.0 with examples, September 1997 for Draft 2.0, and EIAJ
 approval of Level 2 (SI and PI) planned for December 1997.

 
 IBIS FORUM I/O BUFFER MODELING COOKBOOK, Stephen Peters, Intel Corp.
 Stephen passed out Revision 2.0, June 11, 1997 draft of the above document 
 and reviewed its contents.  It extends the cookbook to Version 2.1 levels
 and contains tables to clearly show the key components of IBIS models and
 the required/optional keywords and subparameters.  The sections are
 Introduction, Pre-Modeling Steps, Extracting the Data, Putting the Data Into
 and IBIS File, Validating the Model, Correlating the Data, and Resources.
 Five Examples are proposed and several individuals volunteered to provide
 them.  Stephen asked for feedback including comments from EDA vendors on
 the recommended test loads for waveforms.

 AR - The following people have volunteered to supply examples
  Steve Kaufer/Hyperlynx -- Example 1
  Arpad Muranyi - Example 2
  Stephen Peters - Example 3 

 AR - D.C Sessions.  Supply a paragraph or two explaining the best way to
 modify a SPICE transistor model to get realistic power and ground clamp 
 information

 AR - Bob Ross.  Supply the text for the section "Diode Transient Time Data"

 AR - Syed Huq.  Review and expand (if necessary) Section 3.3. on "Obtaining
 I/V and Switching Information via Lab Measurment".

 AR - Everyone who received a copy review the document and provide comments
 to Stephen Peters (address at the end).



 ELECTION OF EIA/IBIS OPEN FORUM OFFICERS FOR 1997-1998.
 The following Individuals were nominated and elected to serve as Committee
 officers:  Bob Ross, Chair, Syed Huq, Vice Chair, Stephen Peters, Secretary,
 and Jon Powell, Librarian.  They are listed at the end of these minutes.
 
 Patti Rusher presented EIA/IBIS Committee appreciation plaques to Jon Powell,
 Syed Huq, and Bob Ross for service for the 1996-1997 term.

 
 TECHNICAL SESSION
 After a break for lunch the technical session focused on final consideration
 of the Open BIRDs and the Ratification of IBIS Version 3.0 with modifications
 discussed at the meeting.


 BIRD41.7 - MODELING SERIES SWITCHABLE DEVICES
 Bob Ross proposed a syntax change for discrete elements changing [R L Series]
 to [Rl Series], [R C Series] to [Rc Series], and [L C Series] to [Lc Series].
 This was to make the syntax clearer and reduce underbar and space
 combinations.  This was approved.

 Also Bob Ross indicated that another reference in IBIS in the first paragraph
 under the [Model] keyword needs to be changed in two locations: [Pin] is
 changed to "[Pin] and [Series Pin Mapping]".  This was approved.

 Bob Ross also gave a presentation SERIES SWITCH MODELING TESTS showing the
 models and simulation results under Spice.  A crossbar switch model was shown.
 Drain Current as a function of Source Voltage for fixed Drain to Source
 voltages were shown.  This is another way of showing resistance as a function
 of voltage.  The tables show that this effective resistance changes as the
 drain to source voltage increases.  Because of the values of the models, using
 a 1/2 volt or 1 volt basis provides reasonable accuracy approximations.  All
 of the data assumed a linear relationship between voltage across the component
 and corresponding drain current.  While a two table implementation using a
 quadratic fit was tested, Bob reported did not have the predicted accuracy 
 improvement to justify recommending it.

 Under loaded conditions, the proposed [Series MOSFET] table model showed
 excellent correlation with the Spice Model for a single MOSFET transistor.
 A reflected wave circuit was used for the remaining tests to force the table
 model to operate in the forward and reverse directions over its entire range.
 Again good correlation was shown, with the major deviation being in the high
 impedance range.  The model supports moving the Vcc to 4.3 V for 5 V to 3.3 V
 interface applications.

 A full Spice model for the TI 74CBT3383 was tested against the proposed 
 IBIS simulation.  This switch has effective ground clamps and capacitances
 at both terminals.  The Spice simulation also showed agreement for 3.3 V
 inputs using the reflected wave test circuit.  The 5 V input showed more
 of a mismatch.  However, D.C. Sessions and others indicated that the 
 results were as good as could be expected since there were some very non-
 linear capacitances when the drain and source node voltage differences
 become equal.  The results also showed an effective power clamp, even though
 the DC extraction shows no such clamp.  However, this may also be second
 order effects associated with the non-linear behavior of the actual Spice
 Level 13 model.  In this region, the results were still deemed satisfactory
 considering the numerical uncertainties with high impedance regions.  Bob
 stated that the 4 pF capacitances were found by experimental matching, the
 data book indicates 6 pF.

 As part of the subsequent discussion, Stephen Peters requested a fully
 formatted IBIS example.  A vote on BIRD41.7 with changes was conducted.

 BIRD41.7 was unanimously approved with the above changes.

 AR - Bob Ross post BIRD41.8 documenting these changes and include the
 changes in the revised IBIS Version 3.0 [Done]

 AR - Bob Ross submit an example of a Series MOSFET component.


 BIRD43 - COMPONENT TEST POINT SUBPARAMETERS
 Bob Ross briefly introduced BIRD43 as an extension of the [Component] 
 keyword by adding two subparameters for timing and signal integrity 
 testing location (Die or Pin).  The primary motivation is that ASICs tend
 to provide specifications at the Die rather than the (default) Pin location.

 BIRD43 was approved by unanimous vote.


 BIRD44 - INTERPRETATION OF MIN/MAX/WEAK/STRONG DATA
 Bob Ross introduced BIRD44, recently submitted by Andy Ingraham.  With few 
 exceptions the Committee requires that BIRDs to be submitted at least two
 weeks prior to voting to give everyone an opportunity for review.  BIRD44
 does not change any technical content but is intended to provide clarity of
 the min and max tables usage for [Model]s.  Since the content is mostly
 editorial, BIRD44 can be considered for IBIS Version 3.1 where a number of 
 suggested editorial changes will be considered.

 Also, Bob indicated that maybe a note in the front may be an alternative way
 of dealing with the issue while retaining much of the established min/max
 notation that currently exists in models.


 BIRD42.2 - MODELING CURRENT WAVEFORMS
 Based on a suggestion by D.C. Sessions, Bob Ross deferred discussion of
 BIRD42.2 after considering the other BIRDs because of some controversial
 aspects.

 BIRD42.2 introduces keywords under the [Rising Waveform] and [Falling
 Waveform] tables for tables describing the ground and power currents of the
 buffer.  These tables give more detail regarding actual current flow for the
 buffer for bounce calculations and potentially provide more information for
 accurate modeling of buffer transitions.  C. Kumar drew some diagrams to
 support the position for more accurate modeling.  D.C. Sessions was concerned
 that this might not be the case and that the additional information might
 either be redundant or contradictory.  Much discussion and debate followed.
 One question was whether just a shunt current between rails was all that was
 needed.  Some other questions were raised regarding other paths - such as the
 input current glitch and possible capacitance and diode paths that may enter
 into the distribution.  It became clear that we could not reach a consensus.
 Werner Rissiek proposed that we not vote on BIRD42.2 and that it not be
 included in IBIS Version 3.0.

 The committee agreed to keep the editorial changes, example changes and
 recommendation text additions to [Rising Waveform] and [Falling Waveform]
 that are documented in BIRD42.2 as an editorial change to IBIS Version 3.0. 

 Regardless of the outcome, Bob proposed that BIRD42.2 keywords be changed to
 reflect the rail to which they are attached.  [GND Current] would be changed
 to [Pulldown Reference Current] and [POWER Current] would be changed to
 [Pullup Reference Current].  The Committee agreed with this change.  This
 would allow extensions to the other rails if needed and allow descriptions
 for ECL models to be consistent within the IBIS conventions.

 AR - Bob Ross post Bird42.3 documenting these changes.  Also delete the 
 keywords [GND Current] and [POWER Current] from IBIS Version 3.0.  [Done]

 AR - D.C. Sessions and Kumar get together and provide an example showing
 where the rising and falling waveform tables do not result in correct
 results.


 Bob mentioned that that while we have traditionally made the IBIS Version
 X.1 an editorial correction release, we were not bound by this convention.
 BIRD42.3 can be a candidate for inclusion in IBIS Version 3.1.  We also
 could issue an IBIS Version 3.2 as the final editorial correction since the
 parser development is expected to take a long time (one-half a year or more).


 DYNAMIC CLAMPS AND OTHER ITEMS
 Arpad Muranyi has not yet prepared a BIRD on this area.  However, since
 it relates to actual implementations, it could also be considered as a
 possible addition to IBIS Version 3.1 if the proposal is approved.

 Stephen Peters felt that the dynamic ranges within IBIS were unnecessarily
 large for some open configurations such as GTL devices with 3.3 V supplies,
 which are terminated 1.2 V or 1.5 V and have a reduced voltage swing.  Some
 notes could be made in the Cookbook or proposed as an editorial revision
 of IBIS Version 3.0 via the BIRD process.


 VERSION 3.0 RATIFICATION
 After the above consideration and resolutions of BIRD41.8 and BIRD43, Bob
 Ross asked for a ratification vote on IBIS Version 3.0 with the discussed
 modifications.

 IBIS Version 3.0 was unanimously ratified as modified.  Bob will make the 
 agreed upon changes and a few other minor corrections he discovered and will
 put the text on vhdl.org under /pub/ibis/ver3.0.  This will provide the
 baseline for IBIS Version 3.1 discussions.  Version 3.0 is not suitable for
 formal EIA and ANSI ratification.  However, it does formally endorse the
 newly approved functionality and syntax that has been under discussion
 for several years.

 D.C. Sessions asked for a grammar for IBIS.  Bob mentioned that he had 
 helped generate an unofficial BNF grammar for IBIS Version 2.1 and will 
 generate an update for Version 3.0.  He will put in the ver3.0 subdirectory.

 AR - Bob Ross generate the approved IBIS Version 3.0 document from the
 Pending document and the approved BIRDs and changes of this meeting and
 post the document on vhdl.org.

 AR - Bob Ross generate and post a BNF for IBIS Version 3.0

 Chris Rokusek asked what the parser status was.  With Version 3.0 ratified,
 Bob now has a document which parser development work can be contracted.

 AR - Bob Ross contact Paul Munsey concerning IBIS Version 3.0 parser
 development.


 FINAL ITEMS
 Steve Kaufer did not need to lead the scheduled discussion on examples for
 IBIS based on recent reflector e-mail.  Adequate discussion already occurred
 with the IBIS Cookbook presentation.

 Syed Huq raised the question concerning whether the IBIS Version 3.1 should
 have better graphics, and perhaps should be a formatted document rather than
 an ASCII document with character pictures.  Word or HTML formats could be
 considered.  This will be a subject for further discussion.

 Stephen Peters volunteered to be involved with the editorial cleanup activity.

 Because of holidays and people being on vacation, the next teleconferencing
 meeting was scheduled on Friday, July 11, 1997.
 
 
 NEXT MEETING:
 The next meeting is on Friday, July 11, 1997, 8:00 A.M. to 9:55 A.M.  
 ==============================================================================
				       NOTES
 
 IBIS CHAIR: Bob Ross (503) 603-2523, Fax (503) 639-3469
	     bob@icx.com
	     Modeling Engineer, Interconnectix
	     10220 SW Nimbus Ave, K4, Portland, OR 97223

 VICE CHAIR: Syed Huq (408) 721-4874, Fax: (408) 721-4785
	     huq@rockie.nsc.com
	     Staff Applications Engineer, National Semiconductor, M/S A-2595
	     2900 Semiconductor Drive, Santa Clara, CA 95052
 
 SECRETARY:  Stephen Peters (503) 264-4108, Fax: (503) 264-4515
	     sjpeters@ichips.intel.com
	     Senior Hardware Engineer, Intel Corporation
             M/S JF1-56
	     2111 NE 25th Ave. 
             Hillsboro, Oregon 97124-5961

 LIBRARIAN:  Jon Powell (805) 988-8250, Fax: (805) 988-8259
	     jonp@qdt.com
	     Senior Scientist, Quad Design/Viewlogic
	     1385 Del Norte Rd., Camarillo, CA 93010
  
 This meeting was conducted in accordance with the EIA Legal Guides and EIA
 Manual of Organization and Procedure.
 
 The following e-mail addresses are used:

   ibis-request@vhdl.org
       To join, change, or drop from either the IBIS Open Forum Reflector
       (ibis@vhdl.org), the IBIS Users' Group Reflector (ibis-users@vhdl.org)
       or both.  State your request.

   ibis-info@vhdl.org
       To obtain general information about IBIS, to ask specific questions
       for individual response, and to inquire about joining the EIA-IBIS
       Open Forum as a full Member.

   ibis@vhdl.org
       To send a message to the general IBIS Open Forum Reflector.  This
       is used mostly for IBIS Standardization business and future IBIS
       technical enhancements.  Job posting information is not permitted.

   ibis-users@vhdl.org
       To send a message to the IBIS Users' Group Reflector.  This is 
       used mostly for IBIS clarification, current modeling issues, and
       general user concerns.  Job posting information is not permitted.

   ibischk-bug@vhdl.org
       To report ibischk2 parser bugs.  The Bug Report Form Resides on
       vhdl.org in /pub/ibis/bugs/bugform.txt along with reported bugs.

 Information on IBIS technical contents, IBIS participants, and actual
 IBIS models are available on the IBIS Home page found by selecting the
 Electronic Information Group under:

   http://www.eia.org

 Check the pub/ibis directory on vhdl.org for more information on previous 
 discussions and results.  You can get on via FTP anonymous.
 
 "IBIS Spoken Here" placards are available from Jon Powell (jonp@qdt.com) for 
 use at trade shows.
 ==============================================================================
 
From owner-ibis  Wed Jun 18 10:42:14 1997
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From: Unger Bernhard <Bernhard.Unger@erlm.siemens.de>
To: "'Syed Huq'" <huq@rockie.nsc.com>
Cc: "'ibis@vhdl.org'" <ibis@vhdl.org>
Subject: Question on Ramp
Date: Wed, 18 Jun 1997 19:38:36 +-200
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Syed,

you wrote s2ibis2 will add 50Ohms pullup to calculate 
dV/dt_f and 50Ohms pulldown to calculate dV/dt_r values.
Looking in the [RAMP] specification of 2.1 IBIS spec. there 
is only a definition for a R_load sub-parameter but not for a
termination voltage. The subparameter is optional if the preferred
50Ohms load is used.
Is it obvious that the ramp values given in an IBIS model are valid
for the following conditions:

dV/dt_f:  R_load pullup to VCC ?

dV/dt_r:  R_load pulldown to GND ?

Regards,

Bernhard

************************************************************************************
#  Dr. Bernhard Unger                                                                                                   
#  Siemens AG                                                                                                                 
#  Dept. ANL A45 AM                                                                                                     
#  Otto-Hahn-Ring 6                 Tel.        +49-89-636-47404                                       
#  D-81730 Munich                  Fax.       +49-89-636-44595                                       
#  Germany                             E-Mail    Bernhard.Unger@erlm.siemens.de                                                                                        
************************************************************************************

----------
Von: 	Syed Huq[SMTP:huq@rockie.nsc.com]
Gesendet: 	Dienstag, 17. Juni 1997 17:36
An: 	ibis-users@vhdl.org; milan@indusinc.com
Betreff: 	Re: Question on Ramp

Milan,

s2ibis2 will add 50Ohms pullup and pulldown to calculate 
dV/dt_f and dV/dt_r values. You can try changing these values
to see if your device will switch or not.

...in your .s2i file:

[Rising waveform] 500 0 NA NA NA NA NA NA NA
[Falling waveform] 500 3.3 NA NA NA NA NA NA NA

Try changing the sim time to a larger number too in your .s2i file

[sim time] 10ns

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Mon Jun 16 17:27:09 1997
> Date: Mon, 16 Jun 1997 15:51:23 -0700 (PDT)
> From: Milan Gandhi <milan@indusinc.com>
> To: ibis-users@vhdl.org
> Subject: Question on Ramp
> X-Sun-Charset: US-ASCII
> 
> Hi,
> 	This is our first experience with IBIS, so this might
> 	be a trivial issue for you experienced folks !!
> 
> 	We are getting Ramp (dV/dt) as 0 in ibis inspite of
> 	providing required Voltage values.
> 	What should we be looking for in order to get
> 	correct Ramp values in Ibis model.
> 	We are using tools from NC university.
> 
> -Thanks, Milan
> 



 
From owner-ibis  Wed Jun 18 12:11:14 1997
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Date: Wed, 18 Jun 97 12:13:40 PDT
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9706181913.AA15570@rockie.nsc.com>
To: huq@rockie.nsc.com, Bernhard.Unger@erlm.siemens.de
Subject: Re: Question on Ramp
Cc: ibis@vhdl.org

Bernhard,

It may not be obvious from the spec defination of [Ramp] but
under 'NOTES ON DATA DERIVATION METHOD' at the end of the spec,
section 3 talks more in details about the pullup to Vcc and
pulldown to GND for various I/O structures.

Regards,
Syed


> 
> Syed,
> 
> you wrote s2ibis2 will add 50Ohms pullup to calculate=20
> dV/dt_f and 50Ohms pulldown to calculate dV/dt_r values.
> Looking in the [RAMP] specification of 2.1 IBIS spec. there=20
> is only a definition for a R_load sub-parameter but not for a
> termination voltage. The subparameter is optional if the preferred
> 50Ohms load is used.
> Is it obvious that the ramp values given in an IBIS model are valid
> for the following conditions:
> 
> dV/dt_f:  R_load pullup to VCC ?
> 
> dV/dt_r:  R_load pulldown to GND ?
> 
> Regards,
> 
> Bernhard
> 
 
From owner-ibis  Wed Jun 18 12:59:16 1997
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Date: Wed, 18 Jun 97 15:43:07 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: bernhard.unger@erlm.siemens.de
Cc: ibis@vhdl.org, ingraham@wrksys.ENET.dec.com
Apparently-To: ibis@vhdl.org, bernhard.unger@erlm.siemens.de
Subject: Re: Question on Ramp

Bernhard,

This is yet another one of those IBIS details where the spec
ASSUMES you know what the "preferred" termination voltage is! 
Actually, the answer is in there, but it forces you to go
scavenging through the IBIS spec to find it.  (This is one of
my big complaints about the IBIS spec.)

If you look near the very back of the 2.1 IBIS spec, under the
section "NOTES ON DATA DERIVATION METHOD", you will find this:

| 3) Ramp Rates:
...
|    b. If: The Model_type is one of the following: Output, I/O, or
|           3-state (not open or ECL types);
|           Then: Attach a 50 ohm resistor to GND to derive the rising edge
|                 ramp.  Attach a 50 ohm resistor to POWER to derive the
|                 falling edge ramp.
|
|       If: The Model_type is Output_ECL or I/O_ECL;
|           Then: Attach a 50 ohm resistor to the termination voltage
|                 (Vterm = VCC - 2 V).  Use this load to derive both the
|                 rising and falling edges.
|
|       If: The Model_type is either an Open_sink type or Open_drain type;
|           Then: Attach either a 50 ohm resistor or the vendor-suggested
|                 termination resistance to either POWER or the vendor-
|                 suggested termination voltage.  Use this load to derive both
|                 the rising and falling edges.
|
|       If: The Model_type is an Open_source type;
|           Then: Attach either a 50 ohm resistor or the vendor-suggested
|                 termination resistance to either GND or the vendor-suggested
|                 termination voltage.  Use this load to derive both the rising
|                 and falling edges.

So your assumptions are correct for a standard CMOS/TTL type
output buffer.

This is one of many areas where the IBIS spec desperately needs
fixing.

Regards,
Andy Ingraham
 
From owner-ibis  Wed Jun 18 13:11:25 1997
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all,

I have a question on rise and fall measurement.
In the cook book, it states that the rise and fall time
measurement are "no load" measurements; ie, remove the 
package parameters(L/R/C) before doing the simulation.

But, later in Lab measurement section, it states that
Capturing rise/fall time data requires either a specific test 
fixture or a motherboard to which the DUT can be attached. 
Rise/fall time measurements require an oscilloscope with 
at least a 4 GHz bandwidth. Take into account the effect 
on the rise/fall times of the device packaging and capacitive 
load.

So, why it does not use any C_pkg and C_leadfram vaule
in rise and fall time measurement in IBIS model.

I am generating ibis model from spice.


-- 
Best Regards,

			Vincent Chang
			

=======================================================================
*  Vincent Chang                         TI MSG ID: hui8              *
*  Design Automation                     mailto:vchang@memh.ti.com    *
*  Memory Products Design                http://www.memh.ti.com/~mcad *
*  Texas Instruments Inc. MS 657         Phone: (281) 274-3167        *
*  PO Box 1443, Houston, TX 77251        Fax:   (281) 274-2067        *
=======================================================================
 
From owner-ibis  Wed Jun 18 14:34:29 1997
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To: ibis@vhdl.org
Subject: dv/dt measurement
Date: Wed, 18 Jun 1997 14:33:34 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello Vincent:

   Good question, and I will attempt to clarify the cookbook.

   The purpose of the rise and fall data is to give the
simulator information on the devices' pullup and pulldown
transistors turn-on/turn-off times.  This data should not include any 
degredation of rise/fall time due to packaging effects.
In a simulation environment generating the 'transistor only' data is not
a problem -- simply remove the package from the simualtion. Unfortunetly,
in a measurement environment one cannot remove the package and so
any data gathered will include package effects.  What the model maker must
do in that case is as described in the cookbook: 

"Using the known packaging parameters and measured I-V curves, construct 
a simulation model of the device using a best guess of the rise/fall time.  With 
an IBIS simulator, adjust the rise/fall times in the model until the simulation 
results match the oscilloscope waveforms."


  Note that in either case (simulation or measurment) do NOT include a
load capacitor on the output.  Adding a load capacitor only complicates
things.

          Regards,
          Stephen Peters
          Intel Corp.




all,

I have a question on rise and fall measurement.
In the cook book, it states that the rise and fall time
measurement are "no load" measurements; ie, remove the 
package parameters(L/R/C) before doing the simulation.

But, later in Lab measurement section, it states that
Capturing rise/fall time data requires either a specific test 
fixture or a motherboard to which the DUT can be attached. 
Rise/fall time measurements require an oscilloscope with 
at least a 4 GHz bandwidth. Take into account the effect 
on the rise/fall times of the device packaging and capacitive 
load.

So, why it does not use any C_pkg and C_leadfram vaule
in rise and fall time measurement in IBIS model.

I am generating ibis model from spice.


-- 
Best Regards,

			Vincent Chang
			

=======================================================================
*  Vincent Chang                         TI MSG ID: hui8              *
*  Design Automation                     mailto:vchang@memh.ti.com    *
*  Memory Products Design                http://www.memh.ti.com/~mcad *
*  Texas Instruments Inc. MS 657         Phone: (281) 274-3167        *
*  PO Box 1443, Houston, TX 77251        Fax:   (281) 274-2067        *
=======================================================================
 
From owner-ibis  Wed Jun 18 12:54:16 1997
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Date: Wed, 18 Jun 1997 12:53:08 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis-users@vhdl.org, ibis@vhdl.org
Subject: IBIS Version 3.0 on vhdl.org

To IBIS Committee:

I have uploaded the approved IBIS Version 3.0 specification to
vhdl.org under /pub/ibis/ver3.0/ver3_0.ibs (also ver3_0.txt).
Please destroy any prior versions you may have obtained under
the wip directory since they are not valid.

IBIS Version 3.0 was ratified at the June 12, 1997 EIA/IBIS
Open Forum Summit meeting.  The uploaded version contains some
minor editoral changes for format consistency and alignment and
some other changes such as replacing IV "curves" with "tables".

The new features based on approved BIRDs contained in Version 3.0
consists of these extensions:

  [Model Selector] keyword for programmable buffers (BIRD30.2)

  [TTgnd], [TTpower] keywords for stored charge effects (BIRD34.2)

  [Driver Schedule] keyword for multi-staged outputs (BIRD35.3)

  Electrical Board Description for .ebd file and keywords(BIRD36.3):
     [Begin Board Description], [Manufacturer], [Number Of Pins], [PIn List],
     [Path Description], [Reference Designator Map], [End Board Description]

  Package Model Extensions (BIRD28.3 and BIRD37.3):
     [Number Of Sections], [Pin Numbers] extension, 

  [Model Spec] keyword and subparameters (BIRD39 and BIRD40)

  Series and Series Switch Extensions (BIRD41.8) including keywords:
     Under [Component]:
       [Series Switch Groups], [Series Pin Mapping]
     Under [Model]
       [Series Current], [Series MOSFET] for IV data
       [R Series], [L Series], [Rl Series], [C Series], [Rc Series], 
           [Lc Series] for RLC series paths
       [On], [Off] for Series_switch models

  [Component] test point subparameters (BIRD43)
     
Bob Ross
Interconnectix


 
From owner-ibis  Fri Jun 20 10:45:26 1997
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Date: Fri, 20 Jun 1997 13:41:00 -0400
From: Patti Rusher <pattir@eia.org>
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To: ibis@vhdl.org
Subject: IBIS Press Release
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Please find below the press release announcing IBIS Version 3.0
ratification. Patti







For Further Information Contact:

Mark V. Rosenker						         For Immediate Release:
Vice President
Public Affairs							          June 19, 1997
(703) 907-7790
PR  97-30


EIA Ratifies IBIS Version 3.0 During 
Design Automation Conference

	Arlington, VA-- The Electronic Industries Association (EIA) announces the 
ratification of the Input/Output Buffer Information Specification (IBIS) 
Version 3.0.  The new version was ratified by the EIA IBIS Committee during 
the Design Automation Conference on June 12, 1997, in Anaheim, California.  
IBIS Version 3.0 provides a format for new functionality requested by users, 
semiconductor vendors and computer aided engineering (CAE) vendors.
	Additionally, new IBIS Committee Officers for 1997-1998 were elected during 
the Design Automation Conference.  Bob Ross, of the Interconnectix unit of 
Mentor Graphics, was named chair;  Syed Huq of National Semiconductor was 
elected vice-chair; Stephen Peters of Intel Corporation was named secretary; 
and Jon Powell of the Quad Design unit of Viewlogic was named librarian.
	Committee Chair Bob Ross, in commenting on the ratification of Version 3.0, 
stated,  "I am pleased that we are moving forward on this important project.
 IBIS Version 3.0 meets the immediate needs of those in our industry and 
allows us to move on to the next step."
	Version 3.0 extensions include driver selection of buffers, diode stored 
charge modeling, package model extensions for lines and sections, electrical 
board descriptions for SIMMS, multistage drivers, series components and 
series switches, as well as specification and information enhancements.
	IBIS Version 3.0 supports all the functionality of ANSI/EIA-656 (Version 
2.1) and Version 1.1.  Version 3.0 serves as the baseline for new IBIS 
parser development and editorial review leading to an anticipated Version 
3.1.
	Information about IBIS Version 3.0 can be obtained through the EIA/IBIS 
Committee by sending a request to ibis-info@vhdl.org or by contacting EIA's 
Patti Rusher at pattir@eia.org.
	For more than 73 years the Electronic Industries Association has been the 
national trade organization representing U.S. electronics manufacturers.  
EIA represents the entire spectrum of companies involved in the design and 
manufacture of electronic components, parts, systems and equipment for 
communications, industrial, government and consumer uses.

# # #

EDITORS:	Please note that information regarding the Electronic Industries 
Association is available via EIA's World Wide Web Site at 
http://www.eia.org.


 
From owner-ibis  Fri Jun 27 03:07:25 1997
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Date: Fri, 27 Jun 1997 12:06:16 +0200
From: Schneider Walter <schwa1@fh-landshut.de>
Organization: Fachhochschule Landshut
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Hello!

Is there anyone, having an ibis-modell for the tms320c31
(digital signalprocessor)?

Who can give me some information for creating an ibis-modell for this?

Besides I want to know, whether IBIS-modells are better appropriated
for CMOS-technologies than for TTL-technologies.

Thank you!


email: schwa1@fh-landshut.de
 
