From: owner-ibis-users@eda.org (ibis-users) To: ibis-users-digest@eda.org Subject: ibis-users V1 #216 Reply-To: Sender: owner-ibis-users@eda.org Errors-To: owner-ibis-users@eda.org Precedence: bulk ibis-users Thursday, July 11 2013 Volume 01 : Number 216 ---------------------------------------------------------------------- Date: Mon, 8 Jul 2013 09:11:21 +0000 From: Rinsha Reghunath Subject: [IBIS-Users] On-die decap modeling in IBIS 5.1 - --_000_6CF2432F84DCD244B763C5F4FD9D86F70AF861IN01WEMBXAinterna_ Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: quoted-printable Hi all, How do we model RC on-die decap in IBIS 5.1 models? I read about using "Series" model type and [Series Pin Mapping] keyword to = model decoupling circuit, but would like to understand more about the same.= Please guide with reference materials or explanations. Thanks, Rinsha - --=20 This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70AF861IN01WEMBXAinterna_ Content-Type: text/html; charset="us-ascii" Content-Transfer-Encoding: quoted-printable

Hi all,

 

How do we model RC on-die decap in IBIS 5.1 models?<= o:p>

 

I read about using “Series” model type a= nd [Series Pin Mapping] keyword to model decoupling circuit, but would like= to understand more about the same. Please guide with reference materials o= r explanations.

 

Thanks,

Rinsha


--=20
This message has been scanned for viruses and
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believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70AF861IN01WEMBXAinterna_-- - -------------------------------------------------------------------- |For help or to subscribe/unsubscribe, e-mail mikelabonte@eda-stds.org |or ibis-request@eda-stds.org | |IBIS reflector archives exist under: | | http://www.eda-stds.org/ibis/email_archive/ Recent | http://www.eda-stds.org/ibis/users_archive/ Recent | http://www.eda-stds.org/ibis/email/ E-mail since 1993 ------------------------------ Date: Thu, 11 Jul 2013 09:24:36 +0000 From: Rinsha Reghunath Subject: [IBIS-Users] RE: On-die decap modeling in IBIS 5.1 - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B0216IN01WEMBXAinterna_ Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: quoted-printable Hello all, I would like to understand about on-die decap modeling in IBIS 5.1 models a= nd how PDN analysis is done using the same. Any help would be appreciated. Thanks, Rinsha From: owner-ibis-users@eda.org [mailto:owner-ibis-users@eda.org] On Behalf = Of Rinsha Reghunath Sent: Monday, July 08, 2013 2:41 PM To: ibis-users@eda.org; ibis@eda.org Subject: [IBIS-Users] On-die decap modeling in IBIS 5.1 Hi all, How do we model RC on-die decap in IBIS 5.1 models? I read about using "Series" model type and [Series Pin Mapping] keyword to = model decoupling circuit, but would like to understand more about the same.= Please guide with reference materials or explanations. Thanks, Rinsha - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --=20 This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B0216IN01WEMBXAinterna_ Content-Type: text/html; charset="us-ascii" Content-Transfer-Encoding: quoted-printable

Hello all,<= /span>

 

I would like to unders= tand about on-die decap modeling= in IBIS 5.1 models and how PDN analysis is done using the same. Any help w= ould be appreciated.

=  

Thank= s,

Rinsh= a

 

From: owner-ib= is-users@eda.org [mailto:owner-ibis-users@eda.org] On Behalf Of Rinsha Reghunath
Sent: Monday, July 08, 2013 2:41 PM
To: ibis-users@eda.org; ibis@eda.org
Subject: [IBIS-Users] On-die decap modeling in IBIS 5.1

 

Hi all,

 

How do we model RC on-die decap in IBIS 5.1 models?<= o:p>

 

I read about using “Series” model type a= nd [Series Pin Mapping] keyword to model decoupling circuit, but would like= to understand more about the same. Please guide with reference materials o= r explanations.

 

Thanks,

Rinsha


- --
This message has been scanned for viruses and
dangerous content by MailScanne= r, and is
believed to be clean.


--=20
This message has been scanned for viruses and
dangerous content by MailScanner, and is
believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B0216IN01WEMBXAinterna_-- - -------------------------------------------------------------------- |For help or to subscribe/unsubscribe, e-mail mikelabonte@eda-stds.org |or ibis-request@eda-stds.org | |IBIS reflector archives exist under: | | http://www.eda-stds.org/ibis/email_archive/ Recent | http://www.eda-stds.org/ibis/users_archive/ Recent | http://www.eda-stds.org/ibis/email/ E-mail since 1993 ------------------------------ Date: Thu, 4 Jul 2013 16:04:11 +0000 From: "Muranyi, Arpad" Subject: [IBIS-Users] RE: Query on Ccomp parameter for IBIS model - --_000_EB55FD6CF8C21444BE032D68DDA5FB998BA5D134NAMBX04mgcmento_ Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: quoted-printable I would take the smallest number from the fast corner for the C_comp-min va= lue and the largest number from the slow corner for the C_comp-max value, and average these two for the typical C_comp value. You might wonder why do it this way. Usually the capacitance on the die is somewhat independent from the transistor process corners, because a lot of = it is a factor of the metallization process on the die. These may vary indepe= ndently from the transistor (silicon) process variations, so it is possible to have combinations which are not described in your min or max corner transistor m= odels. But if you know these relationships better and don't think that having such combinations will ever happen, you can pick the fast min value for C_comp-m= in and slow-max value for C_comp-max. I hope this helps, even if I didn't give you a direct answer. Arpad =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D From: Amitava Banerjee [mailto:tava@cypress.com] Sent: Thursday, July 04, 2013 3:35 AM To: Muranyi, Arpad; ibis-users@eda.org Subject: RE: Query on Ccomp parameter for IBIS model Thanks Arpad for this explanation. Actually we have run for all the corners= . The data has been given below. Please let us know if our assumptions are = ok. Do we need to take the worst case number across process corners for C_comp_= max. And similarly the lowest 'estcap' value for C_comp_min. Simulation type :=3D Corner :- typ-typ ; Temp :- 27 ; Vcc=3D1.8V outdcbias estcap 0.0000 2.706e-12 0.2000 2.752e-12 (max) 0.4000 2.706e-12 0.6000 2.673e-12 0.8000 2.626e-12 1.0000 2.436e-12 1.2000 1.934e-12 1.4000 1.809e-12 (min) 1.6000 1.825e-12 1.8000 1.851e-12 C_comp (typ) =3D ( 2.76 + 1.809 ) / 2 pF =3D 2.2805 pF Simulation type :=3D Corner : slow-slow ; Temp : 125 ; Vcc=3D1.7V outdcbias estcap 0.0000 2.877e-12 0.2000 2.939e-12 (max) 0.4000 2.877e-12 0.6000 2.814e-12 0.8000 2.680e-12 1.0000 2.482e-12 1.2000 1.939e-12 1.4000 1.923e-12 1.6000 1.955e-12 1.7000 1.979e-12 C_comp (max) =3D 2.939 pF Simulation type :=3D Corner : fast-fast ; Temp : -40 ; Vcc=3D1.9V outdcbias estcap 0.0000 2.532e-12 0.2000 2.569e-12 0.4000 2.532e-12 0.6000 2.511e-12 0.8000 2.510e-12 1.0000 2.415e-12 1.2000 2.073e-12 1.4000 1.714e-12 (min) 1.6000 1.724e-12 1.8000 1.740e-12 1.9000 1.751e-12 C_comp (min) =3D 1.714 pF Regards, Amitava From: owner-ibis-users@eda.org [mailto:own= er-ibis-users@eda.org] On Behalf Of Muranyi, Arpad Sent: Wednesday, July 03, 2013 8:26 PM To: ibis-users@eda.org Subject: [IBIS-Users] RE: Query on Ccomp parameter for IBIS model Girija/Amitava, Attachments are usually not allowed on these email discussion forums, because they would overload the servers too much... =46rom within the voltage range of your signal swing, pick the smallest value of those capacitances for C_comp-min and the highest value for C_comp-max and put the average of those two in C_comp-typ. I hope this helps, Arpad =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D From: owner-ibis-users@eda.org [mailto:own= er-ibis-users@eda.org] On Behalf Of Girija V Chougala Sent: Wednesday, July 03, 2013 5:39 AM To: ibis-users@eda.org Cc: Amitava Banerjee Subject: [IBIS-Users] RE: Query on Ccomp parameter for IBIS model Hi All, As attachment is huge, sending data again which I have simulated for bias v= oltage versus capacitance. param_dcbias C_comp temperature 0. 2.880e-12 85.0000 0.2000 2.937e-12 85.0000 0.4000 2.880e-12 85.0000 0.6000 2.837e-12 85.0000 0.8000 2.768e-12 85.0000 1.0000 2.600e-12 85.0000 1.2000 2.343e-12 85.0000 1.4000 1.902e-12 85.0000 1.6000 1.922e-12 85.0000 1.8000 1.960e-12 85.0000 Please let me know which value I should use in my IBIS model. Regards, Girija/Amitava From: Girija V Chougala Sent: Wednesday, June 26, 2013 2:15 PM To: ibis-users@eda.org Cc: Amitava Banerjee Subject: Query on Ccomp parameter for IBIS model Hi, I have worked on deriving C_comp value for an I/O buffer (used the same tec= hnique given in IBIS cookbook - http://www.vhdl.org/ibis/cookbook/cookbook-= v4.pdf ). The Vcc of the device is 1.8V. I have simulated C_comp for different bias voltages (VDC) - 0, 0.2, 0.4, 0.= 6, 0.8, 1.0, 1.2, 1.4, 1.6, 1.8. The different C_comp values obtained are given in the attached bmp file. Pl= ease let me know which value should I use in my IBIS model. Thanks & Regards, Amitava This message and any attachments may contain Cypress (or its subsidiaries) = confidential information. If it has been received in error, please advise t= he sender and immediately delete this message. - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. This message and any attachments may contain Cypress (or its subsidiaries) = confidential information. If it has been received in error, please advise t= he sender and immediately delete this message. - --=20 This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --_000_EB55FD6CF8C21444BE032D68DDA5FB998BA5D134NAMBX04mgcmento_ Content-Type: text/html; charset="us-ascii" Content-Transfer-Encoding: quoted-printable

I would take the smallest number from the fast= corner for the C_comp-min value

and the largest number from the slow corner fo= r the C_comp-max value, and

average these two for the typical C_comp value= .

 

You might wonder why do it this way.  Usu= ally the capacitance on the die is

somewhat independent from the transistor proce= ss corners, because a lot of it

is a factor of the metallization process on th= e die.  These may vary independently

from the transistor (silicon) process variatio= ns, so it is possible to have

combinations which are not described in your m= in or max corner transistor models.

But if you know these relationships better and= don’t think that having such

combinations will ever happen, you can pick th= e fast min value for C_comp-min

and slow-max value for C_comp-max.<= /span>

 

I hope this helps, even if I didn’t give= you a direct answer.

 

Arpad

=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=

 

From: Amitava = Banerjee [mailto:tava@cypress.com]
Sent: Thursday, July 04, 2013 3:35 AM
To: Muranyi, Arpad; ibis-users@eda.org
Subject: RE: Query on Ccomp parameter for IBIS model

 

Thanks Arpad for this = explanation. Actually we have run for all the corners. The data has been gi= ven below. Please let us know if our assumptions are ok.

Do we need to take the= worst case number across process corners for C_comp_max. And similarly the= lowest 'estcap' value for C_comp_min.

 

Simulation= type :=3D Corner :- typ-typ ;  Temp = :- 27 ;  Vcc=3D1.8V

outdcbias      &= nbsp;   estcap        &nb= sp;             &nbs= p;           &nb= sp;            =            

    0.0000   &= nbsp;         2.706e-12  =           

    0.2000           = ;  2.752e-12     (max)

    0.4000     = ;        2.706e-12   = ;         

    0.6000   &= nbsp;         2.673e-12  =           

    0.8000   &= nbsp;         2.626e-12  =           

    1.0000   &= nbsp;         2.436e-12  =           

    1.2000   &= nbsp;         1.934e-12  =           

    1.4000           = ;  1.809e-12     (min)

    1.6000    =          1.825e-12   = ;         

    1.8000   &= nbsp;         1.851e-12  =         

 

C_comp (typ) = =3D ( 2.76 + 1.809 ) / 2 pF =3D 2.2805 pF

 

Simulation= type :=3D Corner : slow-slow ;  Temp= : 125 ;  Vcc=3D1.7V

outdcbias  estcap    =              &n= bsp;            &nbs= p;        

    0.0000    =             2.8= 77e-12            &n= bsp;  

    0.2000           = ;     2.939e-12 (max)   &nbs= p;           <= /p>

    0.4000   &= nbsp;            2.8= 77e-12            &n= bsp;  

    0.6000   &= nbsp;            2.8= 14e-12            &n= bsp;  

    0.8000   &= nbsp;            2.6= 80e-12            &n= bsp;  

    1.0000   &= nbsp;            2.4= 82e-12            &n= bsp;  

    1.2000   &= nbsp;            1.9= 39e-12            &n= bsp;  

    1.4000    =             1.9= 23e-12

    1.6000   &= nbsp;            1.9= 55e-12            &n= bsp;  

    1.7000   &= nbsp;            1.9= 79e-12            &n= bsp;  

 

C_comp (max) = =3D 2.939 pF

 

Simulation= type :=3D Corner : fast-fast ;  Temp= : -40 ;  Vcc=3D1.9V

outdcbias       =   estcap            =             &nb= sp;    

    0.0000   &= nbsp;        2.532e-12   =           

    0.2000    =         2.569e-12   =  

    0.4000    =         2.532e-12   =           

    0.6000    =         2.511e-12   =           

    0.8000    =         2.510e-12   =           

    1.0000    =         2.415e-12   =           

    1.2000    =         2.073e-12   =           

    1.4000           = ; 1.714e-12     (min)

    1.6000     = ;       1.724e-12    = ;         

    1.8000    =         1.740e-12   =           

    1.9000   &= nbsp;        1.751e-12   =    

 

C_comp (min) = =3D 1.714 pF

 

Regards,

Amitava

 

From: owner-ibis-users@eda.org [<= a href=3D"mailto:owner-ibis-users@eda.org">mailto:owner-ibis-users@eda.org<= /a>] On Behalf Of Muranyi, Arpad
Sent: Wednesday, July 03, 2013 8:26 PM
To: ibis-users@eda.org
Subject: [IBIS-Users] RE: Query on Ccomp parameter for IBIS model

 

Girija/Amitava,

 

Attachments are usually not allowed on these e= mail discussion

forums, because they would overload the server= s too much…

 

From within the voltage range of your signal s= wing, pick the

smallest value of those capacitances for C_com= p-min and the

highest value for C_comp-max and put the avera= ge of those

two in C_comp-typ.

 

I hope this helps,

 

Arpad

=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D

 

From: owner-ibis-users@eda.org [<= a href=3D"mailto:owner-ibis-users@eda.org">mailto:owner-ibis-users@eda.org<= /a>] On Behalf Of Girija V Chougala
Sent: Wednesday, July 03, 2013 5:39 AM
To: ibis-users@eda.org
Cc: Amitava Banerjee
Subject: [IBIS-Users] RE: Query on Ccomp parameter for IBIS model

 

Hi All,

As attachment is huge,= sending data again which I have simulated for bias voltage versus capacita= nce.

param_dcbias  =   C_comp          &n= bsp; temperature

   &nbs= p;            &= nbsp;

   &nbs= p;0.            = ;            2.880e-= 12             85.00= 00

    0.2= 000             = ;  2.937e-12          &nb= sp; 85.0000

    0.4= 000             = ;  2.880e-12          &nb= sp; 85.0000

    0.6= 000             = ;  2.837e-12          &nb= sp; 85.0000

    0.8= 000             = ;  2.768e-12          &nb= sp; 85.0000

    1.0= 000             = ;  2.600e-12          &nb= sp; 85.0000

    1.2= 000             = ;  2.343e-12          &nb= sp; 85.0000

    1.4= 000             = ;  1.902e-12          &nb= sp; 85.0000

    1.6= 000             = ;  1.922e-12          &nb= sp; 85.0000

    1.8= 000             = ;  1.960e-12          &nb= sp; 85.0000

Please let me know whi= ch value I should use in my IBIS model.

 

Regards,

Girija/Amitava<= o:p>

From: Girija V= Chougala
Sent: Wednesday, June 26, 2013 2:15 PM
To: ibis-users@eda.org
Cc: Amitava Banerjee
Subject: Query on Ccomp parameter for IBIS model

 

Hi,

 

I have worked on deriving C_comp value for an I/O buffer (used the same technique given in= IBIS cookbook - http://www.vh= dl.org/ibis/cookbook/cookbook-v4.pdf ). The Vcc of the device is 1.8V.<= o:p>

 

I have simulated C_comp for different bias voltages (VDC) - 0, 0.2, 0.4, 0.6, 0.8, 1.0, 1.= 2, 1.4, 1.6, 1.8.

 

The different C_comp values obtained are given in the attached bmp file. Please let me kno= w which value should I use in my IBIS model.

 

Thanks & Regards,

Amitava

This message and any attachments may= contain Cypress (or its subsidiaries) confidential information. If it has = been received in error, please advise the sender and immediately delete this message.
- --
This message has been scanned for viruses and
dangerous content by MailScanne= r, and is
believed to be clean.


- --
This message has been scanned for viruses and
dangerous content by MailScanne= r, and is
believed to be clean.

This message and any attachments may= contain Cypress (or its subsidiaries) confidential information. If it has = been received in error, please advise the sender and immediately delete this message.


--=20
This message has been scanned for viruses and
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believed to be clean. - --_000_EB55FD6CF8C21444BE032D68DDA5FB998BA5D134NAMBX04mgcmento_-- - -------------------------------------------------------------------- |For help or to subscribe/unsubscribe, e-mail mikelabonte@eda-stds.org |or ibis-request@eda-stds.org | |IBIS reflector archives exist under: | | http://www.eda-stds.org/ibis/email_archive/ Recent | http://www.eda-stds.org/ibis/users_archive/ Recent | http://www.eda-stds.org/ibis/email/ E-mail since 1993 ------------------------------ Date: Thu, 11 Jul 2013 16:16:53 +0000 From: Rinsha Reghunath Subject: [IBIS-Users] RE: On-die decap modeling in IBIS 5.1 - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B036FIN01WEMBXAinterna_ Content-Type: text/plain; charset="us-ascii" Content-Transfer-Encoding: quoted-printable Hi Arpad, Thanks for your reply. As I mentioned in my first mail, I have read about using "Series" model typ= e and [Series Pin Mapping] keyword to model decoupling circuit. I also refe= rred "Modeling the On-die De-cap of IBIS 5.0 PDN-aware Buffers by Lance Wan= g and Randy Wolff, IBIS Summit (Taipei) Nov. 21st, 2011" wherein it has men= tioned the problem in this approach. So wanted to confirm if Series model i= s the option being used for the same, which is now clear from your reply. Thanks, Rinsha From: owner-ibis@eda.org [mailto:owner-ibis@eda.org] On Behalf Of Muranyi, = Arpad Sent: Thursday, July 11, 2013 7:39 PM To: ibis-users@eda.org; ibis@eda.org Subject: [IBIS] RE: On-die decap modeling in IBIS 5.1 Rinsha, Did you read the section on [Composite Current] in the IBIS specification? There is some mention in there about this topic (around pg. 70 in the v5.1 PDF file). It basically boils down to use the series models between power and ground, optionally with [Pin Mapping] for more detail. Please ask your questions in a more specific way, because if your questions are general, people are not going to start writing books in emails to explain everything you might be interested in about IBIS... I hope this helps, Arpad =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D From: owner-ibis@eda.org [mailto:owner-ibis@eda.= org] On Behalf Of Rinsha Reghunath Sent: Thursday, July 11, 2013 4:25 AM To: ibis-users@eda.org; ibis@eda.org Subject: [IBIS] RE: On-die decap modeling in IBIS 5.1 Hello all, I would like to understand about on-die decap modeling in IBIS 5.1 models a= nd how PDN analysis is done using the same. Any help would be appreciated. Thanks, Rinsha From: owner-ibis-users@eda.org [mailto:own= er-ibis-users@eda.org] On Behalf Of Rinsha Reghunath Sent: Monday, July 08, 2013 2:41 PM To: ibis-users@eda.org; ibis@eda.org Subject: [IBIS-Users] On-die decap modeling in IBIS 5.1 Hi all, How do we model RC on-die decap in IBIS 5.1 models? I read about using "Series" model type and [Series Pin Mapping] keyword to = model decoupling circuit, but would like to understand more about the same.= Please guide with reference materials or explanations. Thanks, Rinsha - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - -- This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --=20 This message has been scanned for viruses and dangerous content by MailScanner, and is believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B036FIN01WEMBXAinterna_ Content-Type: text/html; charset="us-ascii" Content-Transfer-Encoding: quoted-printable

Hi Arpad, <= /span>

 

Thanks for your reply.=

 

As I mentioned in my first = mail, I have read about using &#= 8220;Series” model type and [Series Pin Mapping] keyword to model decoupling circuit. I also referred “Modeling the On-die De-cap of IBIS 5.0 PDN-aware Buffers by= Lance Wang and Randy Wolff, IBIS Summit (Taipei) Nov. 21st, 2011” wherein it has mentioned the pr= oblem in this approach. So wanted to confirm if Series model is the option = being used for the same, which is now clear from your reply.

 

Thanks,

Rinsha

 

From: owner-ib= is@eda.org [mailto:owner-ibis@eda.org] On Behalf Of Muranyi, Arpad
Sent: Thursday, July 11, 2013 7:39 PM
To: ibis-users@eda.org; ibis@eda.org
Subject: [IBIS] RE: On-die decap modeling in IBIS 5.1

 

Rinsha,

 

Did you read the section on [Composite Current= ] in the IBIS

specification?  There is some mention in = there about this

topic (around pg. 70 in the v5.1 PDF file).&nb= sp; It basically

boils down to use the series models between po= wer and ground,

optionally with [Pin Mapping] for more detail.=

 

Please ask your questions in a more specific w= ay, because if

your questions are general, people are not goi= ng to start

writing books in emails to explain everything = you might be

interested in about IBIS…

 

I hope this helps,

 

Arpad

=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D= =3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=3D=

 

 

From: owner-ibis@eda.org [mailto:owner-ibis@eda.org] On Behalf Of Rinsha Reghunath
Sent: Thursday, July 11, 2013 4:25 AM
To: ibis-users@eda.org; ibis@eda.org
Subject: [IBIS] RE: On-die decap modeling in IBIS 5.1

 

Hello all,<= /span>

 

I would like to unders= tand about on-die decap modeling= in IBIS 5.1 models and how PDN analysis is done using the same. Any help w= ould be appreciated.

=  

Thank= s,

Rinsh= a

 

From: owner-ibis-users@eda.org [<= a href=3D"mailto:owner-ibis-users@eda.org">mailto:owner-ibis-users@eda.org<= /a>] On Behalf Of Rinsha Reghunath
Sent: Monday, July 08, 2013 2:41 PM
To: ibis-users@eda.org; ibis@eda.org
Subject: [IBIS-Users] On-die decap modeling in IBIS 5.1

 

Hi all,

 

How do we model RC on-die decap in IBIS 5.1 models?<= o:p>

 

I read about using “Series” model type a= nd [Series Pin Mapping] keyword to model decoupling circuit, but would like= to understand more about the same. Please guide with reference materials o= r explanations.

 

Thanks,

Rinsha


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This message has been scanned for viruses and
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believed to be clean. - --_000_6CF2432F84DCD244B763C5F4FD9D86F70B036FIN01WEMBXAinterna_-- - -------------------------------------------------------------------- |For help or to subscribe/unsubscribe, e-mail mikelabonte@eda-stds.org |or ibis-request@eda-stds.org | |IBIS reflector archives exist under: | | http://www.eda-stds.org/ibis/email_archive/ Recent | http://www.eda-stds.org/ibis/users_archive/ Recent | http://www.eda-stds.org/ibis/email/ E-mail since 1993 ------------------------------ End of ibis-users V1 #216 *************************