From owner-ibis  Fri Feb  7 09:09:40 1997
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Date: Fri, 7 Feb 97 09:09:53 PST
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9702071709.AA09457@rockie.nsc.com>
To: huq@rockie.nsc.com, h-hilbig@ti.com, ibis-users@vhdl.org
Subject: Re: Silicon based IBIS models
Cc: pweber@ti.com, h-behrmann@ti.com

Hans,

You may use the 'ibis-users@vhdl.org' E-mail reflector for IBIS spec/use
related questions. You are correct, we do not yet have a way of posting questions
from the web site.

What I have done for our model generation is to delete data in the linear
regions if the data points exceed the 100 points limitation. I am not aware
of tools available that can readily do this but if there is, I am sure someone
from the IBIS community will respond to this.

Regards,
Syed
National Semiconductor.

> From h-hilbig@ti.com Fri Feb  7 05:55:05 1997
> Date: Fri, 07 Feb 1997 14:52:36 +0100
> From: "H.M.Hilbig" <h-hilbig@ti.com>
> Organization: EMSLP
> X-Mailer: Mozilla 3.0 (WinNT; I)
> To: huq@rockie.nsc.com
> Cc: pweber@ti.com, h-behrmann@ti.com
> Subject: Silicon based IBIS models
> Content-Type> : > text/plain> ; > charset=us-ascii> 
> Content-Transfer-Encoding: 7bit
> 
> HI,
> there is no real IBIS contact listed on the Internet home page and I
> have just requested to be set up on the mail reflector. But I have an
> immediate question I would be glad to get answered or relayed to the
> right person:
> 
> We plan to generate Silicon based IBIS models from characterization data
> we have available anyhow. It is required that the IBIS data does not
> exceed 100 measure points, while our DC curves usually have around 300
> measure points across any sweep range.
> Now the question: 
> We could simply 'delete' equidistant samples from the x-axis, thus
> reducing the amount of measurements from 300 to 100. This bears the risk
> that we skip important non linear information of the curve. We could
> develop an algorithm which deletes samples of the curve's linear
> regions, resulting in a 'linearity' weight distribution of the 100
> measurement samples. Is this an overkill? Are tools out in the field
> which could parse 300+ samples to 100 samples curves for IBIS?
> 
> Thanks for some experienced feedback,
> 
> Best regards,
> Hans M Hilbig Texas Instruments Germany
> e-mail: h-hilbig@ti.com, phone: +49-8161-804126
> 
 
From owner-ibis  Fri Feb  7 09:23:46 1997
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From: scotts@actel.com (Scott Schlachter)
Message-Id: <9702071723.AA09450@ricky.sun_net>
To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Lab data vs. Spice data

Hello Ibis folks,

I'd like to compare notes with those who have produced IBIS files
from *BOTH* Spice and lab measurements.  Please respond to me 
directly (not through the reflector) if you have done this, 
particularly if yours is a CMOS process.  Thanks,

-Scott Schlachter	Actel Corporation
 scotts@actel.com	Sunnyvale, CA
 
 
From owner-ibis  Mon Feb 10 07:36:56 1997
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From: "Edlund, Greg" <Edlund@EXCHANGE.eng.pko.dec.com>
To: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
Subject: DRAM output IV curves
Date: Mon, 10 Feb 1997 10:27:38 -0500
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Does anyone have experience trying to extract output IV curves from
DRAMs in the lab?  This seems like a tough nut to crack since DRAMs lose
their data unless you throw refresh patterns at them continuously.  I
haven't actually tried to do this myself, but I would guess you could
get the pull-down curve all right since the memory cells should default
to a zero state if you don't refresh them.  To get the pull-up curve,
you have to get your curve tracer to work in conjunction with a pattern
generator.

It sure would be nice to have some way of jamming the outputs to make
these measurements...

----------
Greg Edlund , Principal Engineer
Alpha Server Signal Integrity
Digital Equipment Corp.
129 Parker St. PKO3-1/20C
Maynard, MA 01754
(508) 493-4157 voice
(508) 493-0941 FAX
edlund@eng.pko.dec.com
 
From owner-ibis  Mon Feb 10 08:32:43 1997
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To: "Edlund, Greg" <Edlund@EXCHANGE.eng.pko.dec.com>
CC: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
Subject: Re: DRAM output IV curves
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Edlund, Greg wrote:
> 
> Does anyone have experience trying to extract output IV curves from
> DRAMs in the lab?  This seems like a tough nut to crack since DRAMs lose
> their data unless you throw refresh patterns at them continuously.  I
> haven't actually tried to do this myself, but I would guess you could
> get the pull-down curve all right since the memory cells should default
> to a zero state if you don't refresh them.  To get the pull-up curve,
> you have to get your curve tracer to work in conjunction with a pattern
> generator.
> 
> It sure would be nice to have some way of jamming the outputs to make
> these measurements...

First off, DRAM cells are read differentially and you can't count on
them degrading to all zeros.

As to the question, sure: write an all-ones or all-zeros pattern
to the DRAM (a counter works) and then read it out continually
(using the same counter).  Practically speaking, though, it might
be cheaper and quicker to just buy the model if the manufacturer
won't give you one.

Our experience (contact me directly, BTW; we're probably working
on at least one project in common) has been that several DRAM
makers can provide the models but aren't willing to publish
them -- strictly on a request basis.  I've gotten 24-hour turns
thanks to the clock skew between here and Asia.

-- 
D. C. Sessions
dc.sessions@tempe.vlsi.com
 
From owner-ibis  Mon Feb 10 16:55:05 1997
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	Mon, 10 Feb 1997 16:53:38 PST
From: "Jin Man Han" <jmhan@hotmail.com>
To: ibis-users@vhdl.org
Subject: Re: DRAM output IV Curve
Content-Type: text/plain
 

Right after power up and without any pattern writing, most of the
memory cell will be initialized to zero.(I cannnot gurantee, thouh)
The problem is, since internal Read is differential, DRAM output may
be one or zero accroding to row addresses. So if you access a certain
row(with some luck), then you may get all ones.(and vice versa)
If you don't want to bother supplying address to DRAM at all, then
just operate DRAM in Multi-bit-test mode. Then, most likely, you will
have one in you output driver.
When you entering MBT mode, most of the current DRAM outputs
one if all the cells under test have the same data. And that's very
likely.

Hope this will help you extract DRAM IBIS data.
Thanks.

Jin Man Han
Samsung Electronics
jmhan@hotmail.com
jmhan@samsung.co.kr

---------------------------------------------------------
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From owner-ibis  Mon Feb 10 17:01:21 1997
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	Mon, 10 Feb 1997 16:59:53 PST
From: "Jin Man Han" <jmhan@hotmail.com>
To: ibis-users@vhdl.org
Subject: Re: DRAM output IV Curve
Content-Type: text/plain
 

Right after power up and without any pattern writing, most of the
memory cell will be initialized to zero.(I cannnot gurantee, thouh)
The problem is, since internal Read is differential, DRAM output may
be one or zero accroding to row addresses. So if you access a certain
row(with some luck), then you may get all ones.(and vice versa)
If you don't want to bother supplying address to DRAM at all, then
just operate DRAM in Multi-bit-test mode. Then, most likely, you will
have one in you output driver.
When you entering MBT mode, most of the current DRAM outputs
one if all the cells under test have the same data. And that's very
likely.

Hope this will help you extract DRAM IBIS data.
Thanks.

Jin Man Han
Samsung Electronics
jmhan@hotmail.com
jmhan@samsung.co.kr

---------------------------------------------------------
Get Your *Web-Based* Free Email at http://www.hotmail.com
---------------------------------------------------------

 
From owner-ibis  Mon Feb 10 17:49:43 1997
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Message-ID: <Mon, 10 Feb 97 17:43:19 PST_5@ccm.fm.intel.com>
To: ibis-users@vhdl.org
Subject: Re: DRAM output IV curves


Text item: 

Greg,

we have done this succeessfully with a simple test fixture which had an 
oscillator on it to keep the data refreshed.  You don't have to refresh the 
whole array, it is enough to repetitively read from the same cell while you are 
curve tracing.  If you are reading for about 14.5 us and then let go for 0.5 us 
and repeat this forever, the (slowly sweeping) curve tracer will not notice 
anything.  You can build this circuit so that you can write first a zero or one 
into the cell and then just read it forever.

Arpad
===============================================================================

Does anyone have experience trying to extract output IV curves from
DRAMs in the lab?  This seems like a tough nut to crack since DRAMs lose
their data unless you throw refresh patterns at them continuously.  I
haven't actually tried to do this myself, but I would guess you could
get the pull-down curve all right since the memory cells should default
to a zero state if you don't refresh them.  To get the pull-up curve,
you have to get your curve tracer to work in conjunction with a pattern
generator.

It sure would be nice to have some way of jamming the outputs to make
these measurements...

----------
Greg Edlund , Principal Engineer
Alpha Server Signal Integrity
Digital Equipment Corp.
129 Parker St. PKO3-1/20C
Maynard, MA 01754
(508) 493-4157 voice
(508) 493-0941 FAX
edlund@eng.pko.dec.com

Text item: External Message Header

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Subject: DRAM output IV curves
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From owner-ibis  Tue Feb 11 09:23:10 1997
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Date: Tue, 11 Feb 97 11:35:26 EST
From: hoang@msai.mea.com (Hoang Nguyen)
Message-Id: <9702111635.AA27269@sbedrock.msai.mea.com>
To: ibis-users@vhdl.org
Subject: 3-state pullup table generation by s2ibis2 0.91BETA
Cc: hoang@msai.mea.com, tcao@msai.mea.com, nakamae@memg2.hoku.melco.co.jp

Hello IBIS users:

We at Mitsubishi have evaluated the new version of s2ibis2 v1.0,
and we're quite please with the new features and good documentation.
Thank you to the IBIS developers at NCSU.

A couple of tests were run with s2ibis2 version 1.0 and 0.91BETA on the
same device.  We observed the results and thought that there is a problem
in 0.91BETA version regarding pullup table generation for 3-state pin.

To generate the Pullup table for 3-state pin, 0.91BETA version subtracts
the pullup disable curve from the pullup enable curve for the entire
sweep range [-Vcc to 2*Vcc].  While the correct subtraction should be
in the pullup disable range [Vcc to 2*Vcc], which is the same as the
Power Clamp range.  Such operation executes properly in the new version 1.0.

We had provided numerous models generated by 0.91BETA version to customers. 
I wonder if other IBIS users and model providers experience a similar problem.
Although 0.91BETA is just a beta version, I feel that all 3-state models 
generated by 0.91BETA should be re-run using the latest s2ibis2 version 1.0
to meet IBIS SPEC. This may take a while if you have to re-do a lot of models.
I will be glad to hear your ideas/comments on this, as well as how servere the 
impact of the bug on IBIS simulators you're using.

Best regards,

Hoang Nguyen

 
From owner-ibis  Tue Feb 11 10:51:35 1997
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From: schumach@flare.convex.com (Richard A. Schumacher)
Message-Id: <199702111638.KAA12318@flare.convex.com>
To: Arpad_Muranyi@ccm.fm.intel.com, ibis-users@vhdl.org
Subject: Re: DRAM output IV curves
Cc: schumach@flare.convex.com

Another reason for LSI parts to have JTAG or other
boundary scan. With an external controller for the
output stages you can forget about the internal logic.
This makes it easy to model a single output, study 
SSO and package effects, et cetera.

Richard Schumacher

I do not speak officially for the Convex Division
of the Hewlett Packard Company.
 
From owner-ibis  Tue Feb 11 14:14:20 1997
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From: raghu@contec.com (Raj Raghuram)
Message-Id: <9702111957.AA15279@contec10.contec.COM>
To: hoang@msai.mea.com, ibis-users@vhdl.org
Subject: Re: 3-state pullup table generation by s2ibis2 0.91BETA
X-Sun-Charset: US-ASCII

This is in reply to Hoang's comments on s2ibis v1.0. In my earlier job (at 
National) we used s2ibis to generate version 1 IBIS models for a number of 
tristate devices. I do not remember the version number of s2ibis. I suspect it
is an earlier version as we did this in Jan. 1995. We did find a problem with
s2ibis and corrected it.

The problem was exactly what you have mentioned. There is an error in 
subtracting the curves with the output enabled and the output floated.

************************************************************************
Raj Raghuram                                                  
Applied Simulation Technology,                 
2188 Bering Drive,                               
San Jose, CA-95131.                              
Tel: (408) 434-0967 ext.101
Fax: (408) 434-1003
e-mail: raghu@apsimtech.com
************************************************************************


 
From owner-ibis  Tue Feb 11 12:34:32 1997
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Subject: New s2ibis2 update
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S2ibis2 has now been updated to v1.1

This update is a bug-fix only, and does not provide any new
functionality. It fixes the following bug:

    - When using Spectre for simulations, VI curves had the sign of the
      current value reversed (e.g. -1.2A should have been 1.2A)

NOTE THAT THIS BUG ONLY APPEARED WHEN USING SPECTRE FOR SIMULATIONS.
(Thanks to Ganesh Balamitran for the bug report.)

The new distribution (which includes updated sources, new executables,
and corrected example files) can be found at

ftp://vhdl.org/pub/ibis/s2ibis/s2ibis2_v1.1/s2ibis2.tar.Z

and

ftp://ftp.eos.ncsu.edu/pub/vlsi/techreports/s2ibis2.tar.Z

Also, please note that the new distribution does not include an AIX
executable, as I no longer have access to an AIX machine.

Regards,

-- 
Alan Glaser                         "It's not a competition,
ECE Dept.                            it's just a mint..." - K
North Carolina State University
 
From owner-ibis  Tue Feb 11 22:44:20 1997
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Date: Wed, 12 Feb 97 07:43:16 +0100
From: cornelia@thesys.de (Cornelia Foss)
Message-Id: <9702120643.AA07913@s01.thesys.de>
To: ibis-users@vhdl.org
Subject: use of Vil, Vih, Tr, Tf

Hello all,

at first I`d like to thank Chris Rokusek who offered very useful
recommendations concerning [.. waveform] test loads.

A related question reffers to new s2ibis2 V1.0 tool. Vil, Vih,
Tr and Tf are implemented to control input stimulus. These parameters
are not part of the IBIS 2.1 spec (I think) so simulators might
not have algorithms to shape the output waveform of a buffer
relative to the input stimulus. If so, there could be large in-
accuracies due to an input with, say 1ns rise time and the simulator
of course processing the waveform as generated with a 0ns rise time
input.(for none of the above parameters are contained by the .ibs file)

I hope I did not simply overlook something, but if not it might be
better not to use these parameters. (?)

Kindest regards 

Sascha Pawel

 
From owner-ibis  Wed Feb 19 07:01:42 1997
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From: sabineh@s01.thesys.de (Sabine Herre)
Message-Id: <199702191456.PAA09386@s161.design>
To: ibis-users@vhdl.org
Subject: sweep range overlay in clamp curves ??
Cc: sabineh@s01.thesys.de
X-Sun-Charset: US-ASCII


> From sascha Wed Feb 19 15:54:53 1997
> To: sabineh
> Subject: bitte abschicken, danke
> Content-Length: 992
> X-Lines: 24
> 
> To:ibis-users@vhdl.org
> Subject: sweep range overlay in clamp curves ??
> 
> 
> Hello all,
> 
> I tried to model an input structure with constantly connected pullup
> resistor using GND_clamp and POWER_clamp keywords. That causes these
> tables to contain values of some mA for instance for input voltage =
> 5V (Vcc = 5V) as opposed to some nA current for inputs without pullup 
> resistor. I hope simulators will handle this correctly. (has anyone
> experiance?) The problem, anyway, is: The POWER_clamp table for 0V
> (that means 0V above Vcc) and the GND_clamp table for 5V describe the
> same point, for the input characteristic follows the sum of both tables.
> That ends up with double counting of this current value at Vout = Vcc.
> I'm not quite sure I'm right here at all since I saw a published IBIS
> file having two differend currents for POWER_clamp at 0V and GND_clamp
> at 5V and so two differend currents for the same Vout = 5V.
> 
> Any comments are greatly appreciated,
> 
> Sascha Pawel
> 
> email: sabineh@thesys.de
> 
 
From owner-ibis  Wed Feb 19 09:27:51 1997
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Date: Wed, 19 Feb 97 09:17:00 PST
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 19 Feb 97 09:21:44 PST_7@ccm.fm.intel.com>
To: ibis-users@vhdl.org
cc: sabineh@s01.thesys.de
Subject: Re: sweep range overlay in clamp curves ??


Text item: 

Sasha,

Your observation is correct.  If you have an always present pullup or pulldown 
"resistor" (usually implemented as a MOSFET transistor) in a device, the GND 
and Power clamp curves would both show the same effect in the measurement.  And 
you are also right, if nothing is done, this causes double counting.

For this reason, I developed an algorythm in my IBIS model maker tool that will 
take the appropriate steps to avoid double counting.  I am going to describe the
case here which applies to a situation when you have a pullup "resistor" in the 
device.  This example can also be applied to the opposite case when the device 
has a pulldown "R", you just have to invert the whole thing symmetrically.

The following two drawings show the I-V curve of a device with a pullup "R", 
first as it is measured GND relative for the GNC clamp curve, and second as it 
is measured Vcc relative for the power clamp curve.


GND relative:    |                       /
                 |                      /
                 |                     /
              GND|                    /
       ----------+-------------------+-----------
                 |                  /Vcc
               /-|-----------------/
              /  |
             /   |
            /    |


Vcc relative:\   |
              \  |
               \ |
                \|                  GND
       ----------+-------------------+-----------
              Vcc|\
                 | \-------------------\
                 |                      \
                 |                       \
                 |                        \


Obviously, if both of these are put into an IBIS model, you will double count 
the effects of the "resistor", because the clamp curves are to be added together
in an IBIS simulator.  To avoid this double counting, you need to eliminate one 
of these curves.  But how do you do it correctly?

Since the device has a pullup "resistor" it makes sence to use the Vcc relative 
curve to preserve its Vcc relativeness.  Since the slope on the right is coming 
from the GND clamp, I cut that part off.  The question is what do you do with 
the GNC clamp then?  The simple answer is to use the left side slope from the 
GND relative data, but there is a problem.  This data is shifted down by the 
amount of saturation current from the pullup "resistor".  To avoid double 
counting, you need to take the left side slope in the GND relative measurement 
and shift it up by the amount of that current so that this curve goes into the 
origin, and not Isat at 0 volts.  To satisfy the -Vcc to Vcc range, I just add 
another point at Vcc with 0 mA.

Comment:  It is true that IBIS only requires a range of -Vcc to 0 V for the 
power clamp curve.  When I brought this issue up in one of the open forum 
meetings, we all decided that the spec doesn't say that you cannot provide data 
outside that range, so it was legal to do what I described above for the power 
clamp curves.  This might be recorded in one of the meeting minutes, just don't 
ask me which one...

I hope this explaination will help you making correct IBIS models for these kind
of devices.

Arpad Muranyi
Intel Corporation
================================================================================

> From sascha Wed Feb 19 15:54:53 1997
> To: sabineh
> Subject: bitte abschicken, danke
> Content-Length: 992
> X-Lines: 24
>
> To:ibis-users@vhdl.org
> Subject: sweep range overlay in clamp curves ??
>
>
> Hello all,
>
> I tried to model an input structure with constantly connected pullup
> resistor using GND_clamp and POWER_clamp keywords. That causes these
> tables to contain values of some mA for instance for input voltage =
> 5V (Vcc = 5V) as opposed to some nA current for inputs without pullup
> resistor. I hope simulators will handle this correctly. (has anyone
> experiance?) The problem, anyway, is: The POWER_clamp table for 0V
> (that means 0V above Vcc) and the GND_clamp table for 5V describe the
> same point, for the input characteristic follows the sum of both tables.
> That ends up with double counting of this current value at Vout = Vcc.
> I'm not quite sure I'm right here at all since I saw a published IBIS
> file having two differend currents for POWER_clamp at 0V and GND_clamp
> at 5V and so two differend currents for the same Vout = 5V.
>
> Any comments are greatly appreciated,
>
> Sascha Pawel
>
> email: sabineh@thesys.de
>

Text item: External Message Header

The following mail header is for administrative use
and may be ignored unless there are problems.

***IF THERE ARE PROBLEMS SAVE THESE HEADERS***.

X-Sun-Charset: US-ASCII
Cc: sabineh@s01.thesys.de
Subject: sweep range overlay in clamp curves ??
To: ibis-users@vhdl.org
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From: sabineh@s01.thesys.de (Sabine Herre)
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From owner-ibis  Wed Feb 19 12:41:19 1997
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Date: Wed, 19 Feb 97 12:40 PST
From: bob@icx.com ( Bob Ross)
To: ibis-users@vhdl.org, ibis@vhdl.org, mongrain@poster.cae.ca
Subject: Re:  Simulation tools

To everyone:

The IBIS reflectors are NOT to be used for discussing/
commenting on/comparing COMMERCIAL products of Silicon
Vendors, CAE vendors, Connector Vendors, or Users in
any manner whatsoever.

The IBIS Open Forum consists of many competing companies
working together based on common interests, while at the
same time representing the important positions of individual 
companies (most of which are commercial based).  If we start
bickering who is best, we will destroy all cooperation.

Real's questions are fair, however.  If you which to respond,
please respond in private directly to Real.

Best Regards,
Bob Ross
IBIS Open Forum Chair
Phone (503) 603-2523, Fax (503) 639-3469
bob@icx.com
Interconnectix, 10220 S.W. Nimbus Ave., K4, Portland, OR 97223



> Date: Wed, 19 Feb 1997 11:55:06 -0500
> From: "Real Mongrain Jr." <mongrain@poster.cae.ca>
> To: ibis@vhdl.org
> Subject: Simulation tools


> Hi everyone,

> I want to know if anybody have tried many different signal integrity
> simulation tools? (IBIS compatible)
> Anobody compared SigNoise with XTK? Which one is the best?
> Is there other great tools and what are their big advantage?

> Any comments will be very helpful.

> Regards,
> -- 
> ===============================================================
>  Real Mongrain Jr.	MailTo:mongrain@cae.ca
>  CAE Electronics Ltd	http://www.cae.ca
>  8585 Cote de Liesse
>  St-Laurent, Qc, Canada, H4T 1G6
>  Tel.:(514) 341-6780 ext.3218	 fax.:(514) 734-5618
> ===============================================================


 
From owner-ibis  Fri Feb 21 06:19:29 1997
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Date: Fri, 21 Feb 97 15:17:30 +0100
From: cornelia@thesys.de (Cornelia Foss)
Message-Id: <9702211417.AA26458@s01.thesys.de>
To: ibis-users@vhdl.org
Subject: problems with s2ibis2 v1.0 ?

Hello everyone,

first of all I'd like to thank Arpad Muranyi who explained a good method
to avoid double counting when modelling some certain inputs.
However, I think the parser should give a warning if the GND_ and POWER_
clamp tables define currents for the same output voltage and both
tables contain non-sero values within this overlap area. This is currently
mandatory within IBIS for GND_clamp at Vcc and POWER_clamp at 0V define
two currents for the same voltage.

I would be very grateful if anyone could help me with s2ibis2 v1.0.
The main problem is that s2ibis2 does not subtract the POWER_clamp
data from pulldown curves of I/Os (the same with GND_clamp and pullup)
that resulting pulldown tables that contain diode current for Vout
greater than Vcc. (same problem with 3-state type drivers)
This would be correct if simulators add only ONE clamp table to the pullup/
pulldown tables to get the total I/V curve, but my spec says that both clamps
are constantly present and appropriate pullup/pulldown tables are only
added when needed.

s2ibis2 is my favorite IBIS maker tool and works very well in version 1.0
so any help as well as comments on s2ibis2 v1.0 and clamp overlap is
very much appreciated. (and needed)

Sascha Pawel

email: cornelia@thesys.de

 
From owner-ibis  Fri Feb 21 11:14:08 1997
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Date: Fri, 21 Feb 97 11:14 PST
From: bob@icx.com ( Bob Ross)
To: cornelia@thesys.de, ibis-users@vhdl.org
Subject: Re:  ground noise analysis with IBIS

Sascha:

My mistake.  I got the message earlier, but thought it was for
the ibis-users@vhdl.org reflector.  Thus, no response.

I am forwarding it to the ibis-users@vhdl.org reflector for
additonal comments.  I will give you a some general answers.
If people have any vendor-specific differences to my response,
please reply privately to Sascha.

Sascha, you described the crux of the ground/power
bounce problem in your memo.  Your observations are correct.
With the information currently provided in IBIS, you have
to make some ASSUMPTIONS regarding which rails (ground and
power rails) supply the current used during the output 
transitions.  IBIS does not give any details for this.
Furthermore the "assumptions" are usually IMPLICIT, a
consequence of the internal vendor transition algorithms.

My example case is that there is no provision in IBIS
to describe a make-before-break transition mechanism 
that might provide additional rail and ground currents
than needed just for the output alone.

However, to the extent that an IBIS model may still provide
you with a reasonable ball-park estimate, you can still
use IBIS models to provide a reasonable estimate of the
effects in this complicated problem.  There are a lot of
other issues involved (simutaneous switching, allocation of
currents to various rails for multiple drivers, etc.)

The TTgnd and TTpower parameters were intended to provide
a hook so that the often undocument and unpublicized 
"diode kick-back" effect could be modeled and included
in the analysis where applicable.  The diode currents
COULD also be included in the power and ground bounce
analysis.

In my opinion, IBIS has some opportunity to address the
power/ground bounce problem to a reasonable level of accuracy,
but does not have all of the details that might be needed
for an analysis that compares "very" closely to a Spice
analysis or an actual part in SOME cases.  I cannot
QUANTIFY any of the statements in this response.

Best Regards
Bob Ross
Inerconnectix

> Date: Fri, 21 Feb 97 15:20:25 +0100
> From: cornelia@thesys.de (Cornelia Foss)
> Message-Id: <9702211420.AA26474@s01.thesys.de>
> To: ibis-info@vhdl.org
> Subject: ground noise analysis with IBIS
> Status: RO

> Hello everyone,

> I sent out a message to ibis-info@vhdl.org but did not receive any
> response. To assure this mail made it through my system that might
> had some problems, I post it again. If you got it twice, please
> forgive. It is definitely NOT meant as a "reminder" for I know you
> provide this good support via ibis-info on your own time despite you
> are very busy as well.
> Thanks a  lot,

> Sascha Pawel

> email: cornelia@thesys.de

> ********************original message*********************************

> Hello Bob,


> I'd like to thank you for the detailed response to my
> question regarding best test loads. The information
> was very useful and is highly appreciated. 
> As test load recommendations of various simulator vendors
> do not differ that much I hopefully think results won't,
> too. Due to the high level of abstraction when generating
> IBIS models there is the risk of getting simulator dependent
> outcomes, but that risk seems to be lower than I expected.

> Looking though the reflector discussion and all BIRDs I found,
> I couldn't surely solve the following problem:

> When trying to perform ground noise analyses, one has to 
> calculate the currents through each ground path of each driver.
> This could be approximately done by summing all output currents
> extracted from waveform tables. But the simulator will have to
> assign the current to pullup/down side of the driver,  depending 
> on the point of transition. Additionally, the current from VDD 
> to GND has to be calculated and stored charges to be considered.

> My question is: Are these problems intended to be solved in IBIS
> and are there simulators that are capable of that. Further, if 
> yes, will IBIS 3.0 rise enhancements, e.g. will the [TTgnd/pwr]
> keywords be used for ground/power noise analyses?

> I'm not quite sure such transition effects are ment to be modelled 
> by IBIS but they are important for SI and hard to simulate with
> some 30 drivers in SPICE.(would be time saving in IBIS, even if
> not as accurate as SPICE)

> I'm very grateful you counseled me several times and I highly
> appreciated if you could do so, again.

> Much thanks in advance

> Sascha Pawel

> email: cornelia@thesys.de



 
From owner-ibis  Tue Feb 25 09:31:42 1997
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Date: Tue, 25 Feb 97 09:31 PST
From: bob@icx.com ( Bob Ross)
To: ibis-users@vhdl.org, ibis@vhdl.org
Subject: IBIS SUMMIT MEETING

To All:

The IBIS Summit meeting presentations are now stored on vhdl.org
under /pub/ibis/summits/summit97.  Compressed versions of the
presentations are contained in the z97 and zip97 subdirectories
for downloading.  Refer to 00readme.txt for more details.

Bob Ross
Interconnectix
 
From owner-ibis  Fri Feb 28 02:39:53 1997
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Date: Fri, 28 Feb 97 11:03:18 
From: "Hilbers, Alex" <AHilbers@tulip.nl>
Encoding: 1449 Text
Message-Id: <9701288571.AA857156598@uucpgt.tulip.nl>
To: ibis-users@vhdl.org
Subject: Ibis simulation versus Measurement


     Hello,
     
     lately I have been using an Ibis model of a clock. As I use a Quad 
     simulator, the Ibis model is converted to a Quad model. Although a V-T 
     table is included to describe the waveform, there is a distinct 
     difference between the rising and falling edge in simulation and 
     measurement. Even when taking into account probe loading and 
     oscilloscope filtering, the simulated edges cannot match the 
     measurement. The step in the clock output (caused by transmission line 
     loading and reflected wave effects), visible in the simulation, is not 
     seen on the oscilloscope screen. I tried to modify the waveform, which 
     by the way is normalised in Quad, but with unsatisfactory results. 
     
     Tested are:
     
     - the waveform supplied with the clock model
     - a straight line
     - a sinusoidal form
     - no waveform at all (deleted)
     
     Especially the straight line shows a sharp step, the worst of all. The 
     last one (no waveform at all) shows the least visible step, and thus 
     is the best (with respect to the rising/falling edge form). Thus one 
     would ask oneself, why taking the trouble of including those 
     waveforms? 
     
     Is there someone with a similar experience? 
     Or does someone have some recommendations?
     
     
     Best Regards
     
     Alex Hilbers
     ahilbers@tulip.nl
     
 
From owner-ibis  Fri Feb 28 04:34:13 1997
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From: mellitz@eagle.ColumbiaSC.NCR.COM
>From: mellitz@eagle (Richard.Mellitz)
Content-Type: text
Message-Id: <9702280739.ZM21194@eagle>
Date: Fri, 28 Feb 1997 07:39:30 -0500
In-Reply-To: "Hilbers, Alex" <AHilbers@tulip.nl>
        "Ibis simulation versus Measurement" (Feb 28, 11:03am)
References: <9701288571.AA857156598@uucpgt.tulip.nl>
X-Mailer: Z-Mail (2.1.4 02apr93)
To: ibis-users@vhdl.org
Subject: Re: Ibis simulation versus Measurement

Alex,

o In Quad, check the tlp and cpl files to make sure they are a 
physical realization.
o Use a 5Gs+ scope & a > 1GHZ probe with < 1pf
o Charcterize the load.
o Find out if the clock has more than one VI curve.
o Find out how nonlinear the clock driver is.
o Try comparing to spice.

Richard Mellitz, NCR

On Feb 28, 11:03am, "Hilbers, Alex" wrote:
> Subject: Ibis simulation versus Measurement
> 
>      Hello,
>      
>      lately I have been using an Ibis model of a clock. As I use a Quad 
>      simulator, the Ibis model is converted to a Quad model. Although a V-T 
>      table is included to describe the waveform, there is a distinct 
>      difference between the rising and falling edge in simulation and 
>      measurement. Even when taking into account probe loading and 
>      oscilloscope filtering, the simulated edges cannot match the 
>      measurement. The step in the clock output (caused by transmission line 
>      loading and reflected wave effects), visible in the simulation, is not 
>      seen on the oscilloscope screen. I tried to modify the waveform, which 
>      by the way is normalised in Quad, but with unsatisfactory results. 
>      
>      Tested are:
>      
>      - the waveform supplied with the clock model
>      - a straight line
>      - a sinusoidal form
>      - no waveform at all (deleted)
>      
>      Especially the straight line shows a sharp step, the worst of all. The 
>      last one (no waveform at all) shows the least visible step, and thus 
>      is the best (with respect to the rising/falling edge form). Thus one 
>      would ask oneself, why taking the trouble of including those 
>      waveforms? 
>      
>      Is there someone with a similar experience? 
>      Or does someone have some recommendations?
>      
>      
>      Best Regards
>      
>      Alex Hilbers
>      ahilbers@tulip.nl
>      
>-- End of excerpt from "Hilbers, Alex"


 
