From owner-ibis  Tue Jul  1 03:56:55 1997
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From: "UtsumiEngineering" <naka@avisnet.or.jp>
To: <ibis-users@vhdl.org>
Subject: about s2ibis
Date: Tue, 1 Jul 1997 19:59:33 +0900
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Dear Sir,

I am from Utsumi Engineering, Japan.
I had download s2ibis(s2ibis.zip.exe) but I couldn't see those subdirectory
which indicated in
README file.
Also, I couldn't get tryme.ibs after testing tryme.txt with command
s2ibis(s2ibis tryme tryme.ibs), it end with error massages.
Those error massages are:

s2ibis2: Error at line 1: parse error
Token:
*Lipa
Current Buffer:
*Lipa
^

s2ibis: Please begin s2ibis command file with [IBIS Ver] command.
s2ibis: Errors in IBIS file prevent continuation.
s2ibis: Opening file tryme.ibs for  writing...done.

What error massage mean(Error at line 1)?

Could s2ibis run in Windows 95 or it should be run in UNIX environment?

I hope you can help me to solve the problem. I am looking forward to
hearing your answer. 


Thank you.

Yours sincerely,
K.T.Tham
Utsume Engineering
Japan



 
From owner-ibis  Mon Jul  7 15:26:41 1997
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From: Roland Chang <roland_chang@pmc-sierra.bc.ca>
To: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
Subject: [model selector] keyword
Date: Mon, 7 Jul 1997 15:25:57 -0700
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Hello all,

I was wondering, in the use of the model selector keyword, can one list
POWER, GND, and NC?
The reason I ask, is that in the case of pins that are usable in various
modes, it often  involves grounding, or leaving  certain other pins
open(NC).

thanx,

roland
******************************************
Roland Chang ext. 2647

PMC-Sierra 
Applications Department
105-8555 Baxter Place
Burnaby, BC
V5A 4V7
Tel: (604) 415-6000

email: chang@pmc-sierra.bc.ca
******************************************

eg:

[Pin] signal_name    model_name     R_pin       L_pin      C_pin
.
.
.
9     CLKI         crystalbuf    
10   CLKO       crystalbuf
.
.
.
19  IN(+)          PECLbuf
20  IN(-)           PECLbuf
.
.
.
[Model Selector]    crystalbuf
NC        |default, CLKI, CLKO attached to a crystal
pc5x03  |if CLKO left open (NC), feed external clock signal into CLKI

[Model Selector]    PECLbuf
PECL_diff         |default, IN(+), IN(-) function as PECL differential
inputs
PECL_single    | IN(+) as single sided PECL, decouple IN(-) to ground.
TTL_single       | IN(+) as single sided TTL, IN(-) to ground.
GND


 
From owner-ibis  Mon Jul  7 18:07:37 1997
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Date: Mon, 7 Jul 1997 18:06:20 -0700 (PDT)
From: bob@icx.com ( Bob Ross)
To: ibis-users@eda.org, roland_chang@pmc-sierra.bc.ca
Subject: Re:  [model selector] keyword
Cc: ibis@eda.org

Roland:

I do not think we intended that the reserved words be used with
[Model Selector].  As it stands, it looks like they could be
used.  We will need to raise this question as a clarification
issue.

As an alternative, the same effect could be accomplished by
using a Terminator model to accomplish the same effect - 
a low resistance to ground or power for GND or POWER, and
a high resistance for NC.

In your example below, the [Model Selector] does not undo
the differential association that may exist for the differential
driver.  Either the pins 19 and 20 will always be differential
or be single ended based on the [Diff Pin] keyword.  

Best Regards,
Bob Ross
Interconnectix


> From: Roland Chang <roland_chang@pmc-sierra.bc.ca>
> To: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
> Subject: [model selector] keyword
> Date: Mon, 7 Jul 1997 15:25:57 -0700

> Hello all,

> I was wondering, in the use of the model selector keyword, can one list
> POWER, GND, and NC?
> The reason I ask, is that in the case of pins that are usable in various
> modes, it often  involves grounding, or leaving  certain other pins
> open(NC).

> thanx,

> roland
> ******************************************
> Roland Chang ext. 2647

> PMC-Sierra 
> Applications Department
> 105-8555 Baxter Place
> Burnaby, BC
> V5A 4V7
> Tel: (604) 415-6000

> email: chang@pmc-sierra.bc.ca
> ******************************************

> eg:

> [Pin] signal_name    model_name     R_pin       L_pin      C_pin
> .
> .
> .
> 9     CLKI         crystalbuf    
> 10   CLKO       crystalbuf
> .
> .
> .
> 19  IN(+)          PECLbuf
> 20  IN(-)           PECLbuf
> .
> .
> .
> [Model Selector]    crystalbuf
> NC        |default, CLKI, CLKO attached to a crystal
> pc5x03  |if CLKO left open (NC), feed external clock signal into CLKI

> [Model Selector]    PECLbuf
> PECL_diff         |default, IN(+), IN(-) function as PECL differential
> inputs
> PECL_single    | IN(+) as single sided PECL, decouple IN(-) to ground.
> TTL_single       | IN(+) as single sided TTL, IN(-) to ground.
> GND




 
From owner-ibis  Wed Jul  9 16:01:14 1997
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From: Roland Chang <roland_chang@pmc-sierra.bc.ca>
To: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
Subject: capacitor to  ground, and terminator models
Date: Wed, 9 Jul 1997 16:00:44 -0700
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Hello all
I am wondering about the use of the terminator model.  I have a pair of
pins that can be used either as a differential PECL pair, as a single
PECL input, or as a single TTL input.  

When used as a single PECL input, the non-inverting pin is decoupled to
ground through an externally connected 0.01uF capacitor in series.  When
used as a single TTL input, the non-inverting pin is connected to
ground.  My question is, when using the pair of pins in single sided
PECL mode, what should I use as the model for the pin decoupled to
ground?  Should I use simply GND, or a TERMINATOR model?

ie:

[Pin]
.
.
.
|select pins 120 and 121 as either option A, B or C depending on which
mode
|the pair of pins are being used in.
|A: Differential PECL pair mode. (DEFAULT)
120     TRCLKP          pecl06a_PECL2   NA      26.6nH  1.20pF
121     TRCLKN          pecl06a_PECL2   NA      26.6nH  1.20pF
|
|B: Single sided PECL mode. TRCLKP decoupled to ground through 0.01uF
capacitor
|   Note that input is now inverting.
|120     TRCLKP          GND??           NA      26.6nH  1.20pF
 or
|120     TRCLKP          PECLterm??      NA      26.6nH  1.20pF
|121     TRCLKN          pecl06a_PECL1   NA      26.6nH  1.20pF
|
|C: Single sided TTL mode. TRCLKP connected to ground. 
|   Note that input is now inverting.
|120     TRCLKP          GND             NA      26.6nH  1.20pF
|121     TRCLKN          pecl06a_TTL     NA      26.6nH  1.20pF
|
.
.
.  
Also, for TERMINATOR models, what exactly is required? are ground clamp
and power clamp tables required? are [Rgnd] and [Rpower] required? or
can I just simply list [Rac] and [Cac] (with NONE of [Rpower], [Rgnd],
ground clamp, or power clamp curves)?

thanx in advance,

roland

******************************************
Roland Chang ext. 2647

PMC-Sierra 
Applications Department
105-8555 Baxter Place
Burnaby, BC
V5A 4V7
Tel: (604) 415-6000

email: chang@pmc-sierra.bc.ca
******************************************
 
From owner-ibis  Wed Jul  9 16:51:12 1997
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Message-Id: <199707092350.QAA02802@ichips.intel.com>
To: ibis-users@vhdl.org
Subject: capacitor to  ground, and terminator models
Date: Wed, 09 Jul 1997 16:50:03 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello Roland:

   In both cases it appears that in single sided mode pin 120
is not connected to another chip (i.e. it's at a static,
non switching level) and so I would make that pin have a 
model type of NC.  Yes, I know that 'strictly speaking' it
is not a "No Connect", but for simulation purposes NC is the
proper choice.

            Regards,
            Stephen Peters
            Intel Corp.


--------------------------------------------------------
On  Wed, 9 Jul 1997 16:00:44 -0700 Roland Chang wrote:

Hello all
I am wondering about the use of the terminator model.  I have a pair of
pins that can be used either as a differential PECL pair, as a single
PECL input, or as a single TTL input.  

When used as a single PECL input, the non-inverting pin is decoupled to
ground through an externally connected 0.01uF capacitor in series.  When
used as a single TTL input, the non-inverting pin is connected to
ground.  My question is, when using the pair of pins in single sided
PECL mode, what should I use as the model for the pin decoupled to
ground?  Should I use simply GND, or a TERMINATOR model?

ie:

[Pin]
.
.
.
|select pins 120 and 121 as either option A, B or C depending on which
mode
|the pair of pins are being used in.
|A: Differential PECL pair mode. (DEFAULT)
120     TRCLKP          pecl06a_PECL2   NA      26.6nH  1.20pF
121     TRCLKN          pecl06a_PECL2   NA      26.6nH  1.20pF
|
|B: Single sided PECL mode. TRCLKP decoupled to ground through 0.01uF
capacitor
|   Note that input is now inverting.
|120     TRCLKP          GND??           NA      26.6nH  1.20pF
 or
|120     TRCLKP          PECLterm??      NA      26.6nH  1.20pF
|121     TRCLKN          pecl06a_PECL1   NA      26.6nH  1.20pF
|
|C: Single sided TTL mode. TRCLKP connected to ground. 
|   Note that input is now inverting.
|120     TRCLKP          GND             NA      26.6nH  1.20pF
|121     TRCLKN          pecl06a_TTL     NA      26.6nH  1.20pF
|
.
.
.  
Also, for TERMINATOR models, what exactly is required? are ground clamp
and power clamp tables required? are [Rgnd] and [Rpower] required? or
can I just simply list [Rac] and [Cac] (with NONE of [Rpower], [Rgnd],
ground clamp, or power clamp curves)?

thanx in advance,

roland

******************************************
Roland Chang ext. 2647

PMC-Sierra 
Applications Department
105-8555 Baxter Place
Burnaby, BC
V5A 4V7
Tel: (604) 415-6000

email: chang@pmc-sierra.bc.ca
******************************************
 
From owner-ibis  Mon Jul 14 09:21:23 1997
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To: ibis@vhdl.org, ibis-users@vhdl.org
Subject: Persons needed for Golden Parser Development
Date: Mon, 14 Jul 1997 09:20:15 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>



Greetings Fellow IBIS fans and users:


     As you are probably aware, IBIS version 3.0 was approved 
at the IBIS Open Forum face to face meeting on June 7.  With 
the approval of the new IBIS version the Golden Parser 
program ("ibis_chk2") must now be upgraded.  Unfortunately,
the contractors (Paul Munsey and company) who wrote the first 
two versions of the golden parser are not available to work
on a version 3.0 of ibis_chk.  Therefore, the IBIS Open Forum 
is soliciting names of any companies or individuals who may be 
interested in bidding on this project.  If you or your company
are interested, or you know of a contractor who may be, please 
contact Stephen Peters (EIA IBIS Open Forum Secretary) at the 
address below.  An informal request for quote is available for 
the asking.  Thanks for your help.


              Best Regards,
              Stephen Peters
              EIA/IBIS Open Forum Secretary
              Intel Corp.


---------------------------------------------------------------------
Stephen J. Peters  MS JF1-55	Phone: (503) 264-4108
Intel Corporation		Internet: sjpeters@ichips.intel.com
2111 N.E. 25th Ave.     	Fax:   (503) 264-4515
Hillsboro, OR 97124-6497	Microprocessor Division 6
 
From owner-ibis  Wed Jul 16 01:48:48 1997
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Date: Wed, 16 Jul 1997 03:48:15 -0500
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From: Vipul Singhal <vkumar@india.ti.com>
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To: ibis-users@vhdl.org
Cc: sram@india.ti.com, vkumar@india.ti.com, ngs@india.ti.com
Subject: Process parameters 
X-Mailer: VM 6.30 under 19.15 XEmacs Lucid


Hello all,

          I have a doubt regarding the method for obtaining the curves
by simulation as outlined in IBIS  COOKBOOK. The cookbook says ( under
the  section  3.3.1  :  "OBTAINING CURVES  BY SIMULATION -  Simulation
Specifics" ) that :

       "For both the rise/fall   time and I-V curve measurements,
        use "typical" process parameters."

        "For CMOS:
        min = min VCC, max temperature, typ process parameters
                                        ---
        max = max VCC, min temperature, typ process parameters"
                                        ---

Later it says that  " To account for  process variation, decrease  the
current  values taken at  min conditions,  increase the current values
taken  at max, and   derate  the rise  and  fall  time values  by  the
appropriate percentages. "

	This seems to be a  roundabout way of doing  it.  Why can't we
directly  use  "typ" ,  "min"   ,  and  "max" process  parameters,  as
appropriate, directly in  the simulations ?  For  example, if SPICE is
used for  simulation, we can   have three different SPICE  models  for
transistors,  corresponding  to the  process-variation  corners.   Why
should "typical" be used in each case ?

Regards,
Vipul K. Singhal
Texas Instruments 

 
From owner-ibis  Wed Jul 16 05:48:00 1997
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Date: Wed, 16 Jul 97 08:46:36 EDT
From: hoang@msai.mea.com (Hoang Nguyen)
Message-Id: <9707161246.AA07901@sbedrock.msai.mea.com>
To: ibis-users@vhdl.org, vkumar@india.ti.com
Subject: Re: Process parameters
Cc: sram@india.ti.com, ngs@india.ti.com

Hello Vipul,

Since we create our IBIS models from SPICE data, we would use
"typ", "min", "max" process parameters if we have them all.
Usually, the customers require us to have all the process-
variation corners in the model.

So I think the cookbook can include the case of "min", and "max"
as well as "typ".

Regards,

Hoang Nguyen
Mitsubishi Semiconductor America, Inc.


> From owner-ibis@server.vhdl.org Wed Jul 16 05:50:44 1997
> Date: Wed, 16 Jul 1997 03:48:15 -0500
> From: Vipul Singhal <vkumar@india.ti.com>
> Mime-Version: 1.0
> Content-Type> : > text/plain> ; > charset=us-ascii> 
> Content-Transfer-Encoding: 7bit
> To: ibis-users@vhdl.org
> Cc: sram@india.ti.com, vkumar@india.ti.com, ngs@india.ti.com
> Subject: Process parameters 
> X-Mailer: VM 6.30 under 19.15 XEmacs Lucid
> Content-Length: 1268
> 
> 
> Hello all,
> 
>           I have a doubt regarding the method for obtaining the curves
> by simulation as outlined in IBIS  COOKBOOK. The cookbook says ( under
> the  section  3.3.1  :  "OBTAINING CURVES  BY SIMULATION -  Simulation
> Specifics" ) that :
> 
>        "For both the rise/fall   time and I-V curve measurements,
>         use "typical" process parameters."
> 
>         "For CMOS:
>         min = min VCC, max temperature, typ process parameters
>                                         ---
>         max = max VCC, min temperature, typ process parameters"
>                                         ---
> 
> Later it says that  " To account for  process variation, decrease  the
> current  values taken at  min conditions,  increase the current values
> taken  at max, and   derate  the rise  and  fall  time values  by  the
> appropriate percentages. "
> 
> 	This seems to be a  roundabout way of doing  it.  Why can't we
> directly  use  "typ" ,  "min"   ,  and  "max" process  parameters,  as
> appropriate, directly in  the simulations ?  For  example, if SPICE is
> used for  simulation, we can   have three different SPICE  models  for
> transistors,  corresponding  to the  process-variation  corners.   Why
> should "typical" be used in each case ?
> 
> Regards,
> Vipul K. Singhal
> Texas Instruments 
> 
> 
 
From owner-ibis  Wed Jul 16 07:08:25 1997
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Date: Wed, 16 Jul 97 09:58:57 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: vkumar@india.ti.com
Cc: ibis-users@vhdl.org, ingraham@wrksys.ENET.dec.com
Apparently-To: ibis-users@vhdl.org, vkumar@india.ti.com
Subject: Re: Process parameters

Vipul,

I have no idea why it says what it does in the cookbook.  But I think
you should always use best/worst case process models if you have them. 

If you don't have them, then you may need to fudge them by tweaking
the typical process curves.  This may be the case if you are
characterizing actual devices where almost everything is typical.

The IBIS spec itself (version 2.1) also has some discussion about
using "typical process, minus 'X%'" and "typical process, plus 'X%'." 
As far as I am concerned, you should ignore such wording and just do
the right thing.  Use your min and max process parameters.

Regards,
Andy
 
From owner-ibis  Wed Jul 16 08:16:55 1997
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Subject: voltage and temperature in corner cases
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     Hello,
     
     maybe someone already asked this question in the past, I don't know.
     
     I'm trying to figure out how to tweak all the parameters to exercise 
     worst case simulations. Let's take the example of a strong and fast 
     driver. The C_comp and parasitics will be the only parameters of the 
     driver to be weak. All receiver parameters will be weak (parasitics 
     and clamping diodes only). Let's say I tune the parameters of the PCB 
     to be weak also. So far everything is logical.
     
     I've got a problem with the voltage and temperature parameters. Let's 
     say I have ibis models for 5V cmos device, where min and max 
     parameters were extracted in the following conditions :
     
     min = minimum voltage, max temp deg C
     max = maximum voltage, min temp deg C
     
     then, I would have to supply the driver with 5.5V and the receiver 
     with 4.5V which is absolutely not realistic. This case never happens 
     on a motherboard. Also what voltage should be used to connect the 
     components tied to Vcc in between them ?
     
     Same thing for the temperature. There will never be let's say @ -50C 
     on one side and +70C on the other side. Moreover, what temperature 
     value shall I give to the simulation software for the components in 
     between the driver and receiver ?...
     
     In summary : what are the Vcc and temp values I shall use for the 
     corner case simulations ? 
     
     thanks and best regards,
     
     Jean-Christophe PAUTRAT,
     R&D Engineer, Design Engineering
     Commercial Desktop Computer Division,
     H E W L E T T - P A C K A R D

 
From owner-ibis  Wed Jul 16 08:43:52 1997
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Date: Wed, 16 Jul 97 08:13:00 PDT
From: Arpad Muranyi <Arpad_Muranyi@ccm.fm.intel.com>
Message-ID: <Wed, 16 Jul 97 08:41:18 PDT_4@ccm.fm.intel.com>
To: ibis-users@vhdl.org, vkumar@india.ti.com
cc: sram@india.ti.com, ngs@india.ti.com
Subject: Re[2]: Process parameters


Text item: 

To all,

The reason we originally wrote those guidelines in the "notes on data derivation
method" section was this:

Many times the process files describe the absolute worst cases which result in 
very large variations.  Most often such worst case conditions do not exist in 
real life.

When you are working on a high speed system, you might not find a solution using
such models.  This is why we choose to recommend to use the typical process with
temperature and supply variations only.

The extra guardbanding factor is there to provide for additional derating which 
is to account for the process variations.  You might ask why, if you could do 
the same with using the best and worst case process files.  These guardbanding 
factors can be chosen so that your model would be more realistic than using the 
absolute best and worst case process files.

For example, if your process files are made for 6 sigma variations, but you want
only 3 sigma models, you can come up with a derating factor to make 3 sigma 
models using the typical process with voltage and temperature + derating factor.

Of course, if you have a 3 sigma process file, you could just use them to 
convert to IBIS format without using the derating factor.  It is really up to 
you which method you chose.  The whole point is that we want to provide the 
means to be able to make realistic models for the devices.

Arpad Muranyi
Intel Corporation
=============================================================================
Hello Vipul,

Since we create our IBIS models from SPICE data, we would use
"typ", "min", "max" process parameters if we have them all.
Usually, the customers require us to have all the process-
variation corners in the model.

So I think the cookbook can include the case of "min", and "max"
as well as "typ".

Regards,

Hoang Nguyen
Mitsubishi Semiconductor America, Inc.


> From owner-ibis@server.vhdl.org Wed Jul 16 05:50:44 1997
> Date: Wed, 16 Jul 1997 03:48:15 -0500
> From: Vipul Singhal <vkumar@india.ti.com>
> Mime-Version: 1.0
> Content-Type> : > text/plain> ; > charset=us-ascii>
> Content-Transfer-Encoding: 7bit
> To: ibis-users@vhdl.org
> Cc: sram@india.ti.com, vkumar@india.ti.com, ngs@india.ti.com
> Subject: Process parameters
> X-Mailer: VM 6.30 under 19.15 XEmacs Lucid
> Content-Length: 1268
>
>
> Hello all,
>
>           I have a doubt regarding the method for obtaining the curves
> by simulation as outlined in IBIS  COOKBOOK. The cookbook says ( under
> the  section  3.3.1  :  "OBTAINING CURVES  BY SIMULATION -  Simulation
> Specifics" ) that :
>
>        "For both the rise/fall   time and I-V curve measurements,
>         use "typical" process parameters."
>
>         "For CMOS:
>         min = min VCC, max temperature, typ process parameters
>                                         ---
>         max = max VCC, min temperature, typ process parameters"
>                                         ---
>
> Later it says that  " To account for  process variation, decrease  the
> current  values taken at  min conditions,  increase the current values
> taken  at max, and   derate  the rise  and  fall  time values  by  the
> appropriate percentages. "
>
>      This seems to be a  roundabout way of doing  it.  Why can't we
> directly  use  "typ" ,  "min"   ,  and  "max" process  parameters,  as
> appropriate, directly in  the simulations ?  For  example, if SPICE is
> used for  simulation, we can   have three different SPICE  models  for
> transistors,  corresponding  to the  process-variation  corners.   Why
> should "typical" be used in each case ?
>
> Regards,
> Vipul K. Singhal
> Texas Instruments
>
>

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Cc: sram@india.ti.com, ngs@india.ti.com
Subject: Re: Process parameters
To: ibis-users@vhdl.org, vkumar@india.ti.com
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From owner-ibis  Wed Jul 16 08:54:57 1997
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To: ibis-users@vhdl.org
Subject: Process parameters 
Date: Wed, 16 Jul 1997 08:53:44 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>



Hello All:

   Mr. Singhal raises a good point, and I thought I'd respond.
In my experience the "min" and "max" process corners in a semicondutor
model (especially for the early version processes I deal with) could
be better labled "really, really min" and "absloluty, positivly,
completly max".  These corners are usually so far out there
that a model built at those corners is unrealistic.  By this I mean that 
by the time a part is speced 
and the useful yeilds determined the customer probably never ever sees 
a truly "min" and "max" part.  There is also the problem of having to 
figure out how to correlate the parameters that are used in production
testing of a part (Tco, power dissipation, etc.) with the parameters an 
I/O buffer model cares about (edge rate and drive strength).  For
example, does the min and max Tco really correspond to min and max
drive strength?  Given all that, one can resonable use an imperical
% derating factor to determine the corners of an IBIS model.  
   This is not to say that varying the process corners is not a
useful way to make min and max models.  One just has to understand
that "min" and "max" process corners do not necesarly represent the
worst and best case I/O buffers the customer receives.

            Best Regards,
            Stephen Peters
            Intel Corp.


> On Wed, 16 Jul 1997 03:48:15 -0500, Vipul K. Singhal wrote:


Hello all,

          I have a doubt regarding the method for obtaining the curves
by simulation as outlined in IBIS  COOKBOOK. The cookbook says ( under
the  section  3.3.1  :  "OBTAINING CURVES  BY SIMULATION -  Simulation
Specifics" ) that :

       "For both the rise/fall   time and I-V curve measurements,
        use "typical" process parameters."

        "For CMOS:
        min = min VCC, max temperature, typ process parameters
                                        ---
        max = max VCC, min temperature, typ process parameters"
                                        ---

Later it says that  " To account for  process variation, decrease  the
current  values taken at  min conditions,  increase the current values
taken  at max, and   derate  the rise  and  fall  time values  by  the
appropriate percentages. "

	This seems to be a  roundabout way of doing  it.  Why can't we
directly  use  "typ" ,  "min"   ,  and  "max" process  parameters,  as
appropriate, directly in  the simulations ?  For  example, if SPICE is
used for  simulation, we can   have three different SPICE  models  for
transistors,  corresponding  to the  process-variation  corners.   Why
should "typical" be used in each case ?

Regards,
Vipul K. Singhal
Texas Instruments 

 
From owner-ibis  Wed Jul 16 09:05:54 1997
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To: ibis-users@vhdl.org, vkumar@india.ti.com
Subject: Process parameters
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Hi Vipul,

If you have the process parameters for the three cases - typ, min
and max, then you should use them to generate typ, min and max
curves and include them in the model.

If you have only typ process parameters, then you should create
artifically min and max curves based on the typ curves.


_______________________________________________________________
  Harish Patel                       VLSI Technology, Inc. 
  Sr. Design Engineer                Computing Solutions Group
  harish.patel@tempe.vlsi.com        8375 S River Parkway
  602-752-6202/Fax:602-752-6002      Tempe, Arizona 85284                                                
_______________________________________________________________

A policy is a temporary creed liable to be changed, but while
it holds good it has to be pursued with apostolic zeal. 
                                            -- Mahatma Gandhi
 
From owner-ibis  Wed Jul 16 09:16:58 1997
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Sender: chris
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Date: Wed, 16 Jul 1997 09:11:25 -0700
From: "Christopher E. Reid" <chris@icx.com>
Organization: Interconnectix
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To: JEAN-CHRISTOPHE_PAUTRAT@hp-france-om5.om.hp.com
CC: ibis-users@vhdl.org
Subject: Re: voltage and temperature in corner cases
References: <H000036100c69a05@MHS>
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Jean,

The "worst case" depends entirely on what you are trying to measure
and the topology of your nets.  There is no easy way to define
"worst case."  However, some of your questions can be answered.

Most likely your simulator ignores the temperature variations.
The temperature range indicates a reasonable operating range
for the part, and is supposed to have some connection to min
and max corners, but there is no direct tie between the temperature
you choose and the model that gets simulated unless your simulator
specifically defines one, in which case you'd better ask the
simulator vendor what is intended.

If you want a weak driver then use the "min" of most everything,
but use the "max" C_comp.

If you want a high impedance receiver, you can figure out what
to use as well as anyone.

If you want the "worst case" for a particular net, all bets are
off.  If by worst case you mean the most ringing, or the longest
time to "final settle", then that depends on the net topology
as well as the driver and receiver characteristics.  For example,
if you are using a balanced topology, say a star, then the worst
case is probably unbalanced receivers, some high impedance, some
low impedance.

There is no easy answer, although there is some theory behind this
which can be used to get an idea of what might be "worst case."

The only way to be sure is to run a Monte-Carlo type variation
of all the drivers and receivers, not to mention process variations
on you board, actual lengths of lines, etc.

Christopher Reid
Interconnectix
http://www.icx.com

JEAN-CHRISTOPHE_PAUTRAT@HP-France-om5.om.hp.com wrote:
> 
>      Hello,
> 
>      maybe someone already asked this question in the past, I don't know.
> 
>      I'm trying to figure out how to tweak all the parameters to exercise
>      worst case simulations. Let's take the example of a strong and fast
>      driver. The C_comp and parasitics will be the only parameters of the
>      driver to be weak. All receiver parameters will be weak (parasitics
>      and clamping diodes only). Let's say I tune the parameters of the PCB
>      to be weak also. So far everything is logical.
> 
>      I've got a problem with the voltage and temperature parameters. Let's
>      say I have ibis models for 5V cmos device, where min and max
>      parameters were extracted in the following conditions :
> 
>      min = minimum voltage, max temp deg C
>      max = maximum voltage, min temp deg C
> 
>      then, I would have to supply the driver with 5.5V and the receiver
>      with 4.5V which is absolutely not realistic. This case never happens
>      on a motherboard. Also what voltage should be used to connect the
>      components tied to Vcc in between them ?
> 
>      Same thing for the temperature. There will never be let's say @ -50C
>      on one side and +70C on the other side. Moreover, what temperature
>      value shall I give to the simulation software for the components in
>      between the driver and receiver ?...
> 
>      In summary : what are the Vcc and temp values I shall use for the
>      corner case simulations ?
> 
>      thanks and best regards,
> 
>      Jean-Christophe PAUTRAT,
>      R&D Engineer, Design Engineering
>      Commercial Desktop Computer Division,
>      H E W L E T T - P A C K A R D
 
From owner-ibis  Wed Jul 16 10:51:19 1997
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Date: Wed, 16 Jul 97 13:43:23 EDT
From: "J. C. (Jay) Diepenbrock ((919)-543-8804)" <jayd@VNET.IBM.COM>
X-Addr: Interconnect Technology & Quality, B8UA/061/R118
        IBM Global Procurement
        P. O. Box 12195
        Research Triangle Park, NC  27709
To: ibis_users@vhdl.org
Subject: IBIS simulators

Greetings all,

After being away from the IBIS world for a while, I'm trying to get plugged
back into the current state of things.  Can someone fill me in on what my
options are for what I would call standalone simulation?  (By that I mean
simulation of board nets using IBIS models with the input from a schematic,
rather than a board layout database.)  Meta-Software (now Avant!) had
originally planned to support IBIS, then backed away, but I don't know what
has happened since for those of us that want to do topology studies before
boards are designed.

Thanks for your nominations for "simulator of the week" awards.

Jay Diepenbrock
 
From owner-ibis  Wed Jul 16 11:20:03 1997
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From: Lynne Green <lgreen@cdac.com>
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Date: Wed, 16 Jul 1997 11:18:36 -0700 (PDT)
Message-Id: <199707161818.LAA18497@quark.cdac.com>
To: ibis-users@vhdl.org
Subject: Process parameters
Cc: lgreen@ember.cdac.com

re Process Corners:

Delay and drive strength really need 4 process corners:
Best N, Best P
Worst N, Worst P
Best N, Worst P
Worst N, Best P

You will often hear IC designers talk about 16-corner simulations:
2**4 process corners * 2 temperature corners * 2 VDD corners.

Good luck.

Lynne Green
Cascade Design Automation

----- Begin Included Message -----

From owner-ibis@server.vhdl.org Wed Jul 16 10:26:57 1997
To: ibis-users@vhdl.org
Subject: Process parameters 
Date: Wed, 16 Jul 1997 08:53:44 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>



Hello All:

   Mr. Singhal raises a good point, and I thought I'd respond.
In my experience the "min" and "max" process corners in a semicondutor
model (especially for the early version processes I deal with) could
be better labled "really, really min" and "absloluty, positivly,
completly max".  These corners are usually so far out there
that a model built at those corners is unrealistic.  By this I mean that 
by the time a part is speced 
and the useful yeilds determined the customer probably never ever sees 
a truly "min" and "max" part.  There is also the problem of having to 
figure out how to correlate the parameters that are used in production
testing of a part (Tco, power dissipation, etc.) with the parameters an 
I/O buffer model cares about (edge rate and drive strength).  For
example, does the min and max Tco really correspond to min and max
drive strength?  Given all that, one can resonable use an imperical
% derating factor to determine the corners of an IBIS model.  
   This is not to say that varying the process corners is not a
useful way to make min and max models.  One just has to understand
that "min" and "max" process corners do not necesarly represent the
worst and best case I/O buffers the customer receives.

            Best Regards,
            Stephen Peters
            Intel Corp.


> On Wed, 16 Jul 1997 03:48:15 -0500, Vipul K. Singhal wrote:


Hello all,

          I have a doubt regarding the method for obtaining the curves
by simulation as outlined in IBIS  COOKBOOK. The cookbook says ( under
the  section  3.3.1  :  "OBTAINING CURVES  BY SIMULATION -  Simulation
Specifics" ) that :

       "For both the rise/fall   time and I-V curve measurements,
        use "typical" process parameters."

        "For CMOS:
        min = min VCC, max temperature, typ process parameters
                                        ---
        max = max VCC, min temperature, typ process parameters"
                                        ---

Later it says that  " To account for  process variation, decrease  the
current  values taken at  min conditions,  increase the current values
taken  at max, and   derate  the rise  and  fall  time values  by  the
appropriate percentages. "

	This seems to be a  roundabout way of doing  it.  Why can't we
directly  use  "typ" ,  "min"   ,  and  "max" process  parameters,  as
appropriate, directly in  the simulations ?  For  example, if SPICE is
used for  simulation, we can   have three different SPICE  models  for
transistors,  corresponding  to the  process-variation  corners.   Why
should "typical" be used in each case ?

Regards,
Vipul K. Singhal
Texas Instruments 



----- End Included Message -----

 
From owner-ibis  Wed Jul 16 12:46:04 1997
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From: dan@kaw.com (Dan Aleksandrowicz)
Message-Id: <199612182044.PAA00540@blazer.kaw.com>
To: jayd@vnet.ibm.com
Subject: IBIS simulators
Cc: ibis_users@vhdl.org
X-Sun-Charset: US-ASCII

Jay,

As for standalone simulation tools/methodology I know you can do spice simulation using IBIS models using the Cadence tool SigExplore. This is a graphical interface that very useful for using before creating a new board database. And it can enable you to test different configurations and limitations of a net.
Though SigExplore still has no direct interface from a front-end tool as like ViewLogic or Concept.
I personaly use it for placement, however, the tool can standalone.
I know that there are other good tools that can achieve this goal.

Good luck

				Dan Aleksandrowicz 
				Engineering Solutions Specialist
				Tel:(603)886 8711
				email: dan@kaw.com
				http://www.kaw.com






> From owner-ibis@server.vhdl.org Wed Dec 18 15:17 EST 1996
> Date: Wed, 16 Jul 97 13:43:23 EDT
> From: "J. C. (Jay) Diepenbrock ((919)-543-8804)" <jayd@VNET.IBM.COM>
> X-Addr: Interconnect Technology & Quality, B8UA/061/R118
>         IBM Global Procurement
>         P. O. Box 12195
>         Research Triangle Park, NC  27709
> To: ibis_users@vhdl.org
> Subject: IBIS simulators
> 
> Greetings all,
> 
> After being away from the IBIS world for a while, I'm trying to get plugged
> back into the current state of things.  Can someone fill me in on what my
> options are for what I would call standalone simulation?  (By that I mean
> simulation of board nets using IBIS models with the input from a schematic,
> rather than a board layout database.)  Meta-Software (now Avant!) had
> originally planned to support IBIS, then backed away, but I don't know what
> has happened since for those of us that want to do topology studies before
> boards are designed.
> 
> Thanks for your nominations for "simulator of the week" awards.
> 
> Jay Diepenbrock
> 
 
From owner-ibis  Wed Jul 16 12:52:19 1997
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Date: Wed, 16 Jul 97 15:42:52 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: jean-christophe_pautrat@hp-france-om5.om.hp.com
Cc: ibis-users@vhdl.org, ingraham@wrksys.ENET.dec.com
Apparently-To: ibis-users@vhdl.org,
        jean-christophe_pautrat@hp-france-om5.om.hp.com
Subject: Re: voltage and temperature in corner cases

>    I'm trying to figure out how to tweak all the parameters to exercise 
>    worst case simulations. ...

In general, the driver has a much greater effect than the receiver; so
I'd probably tailor the simulation parameters for the driver.

I would expect (but don't know with certainty) that temperature has no
effect whatsoever on IBIS models in a simulation.  The [Temperature
Range] keyword seems to be there only for documentation ... which is
good because it's so often misused.  The weak and strong parameters
that are in the IBIS model, are already margined to the temperature
extremes that the model designer chose to use.  So if you were to do
a simulation that had only IBIS (no SPICE) devices, varying the
simulation temperature would be a no-op.  That being the case, you can
ignore it ... or set it as appropriate for your non-IBIS devices.

The case with supply voltages is similar, but with a twist.  Once
again, the weak and strong IBIS models already have supply voltage
figured into them, but only partly.  Varying the supply voltage
during simulation, will slide the high clamp and pullup curves up
and down in direct proportion; but their shapes would not change. 
The shapes are already built into the weak, typical, and strong
parameters; and simulators probably aren't going to "reverse
engineer" the I/V curves to second-guess what they would have been,
had the supply voltage been different.

So ... while a strong model may have been CREATED using maximum supply
voltage, it can be USED at any supply voltage.  The results may not be
100% correct, but the curves will track Vdd as they should.

For the driver, where you want the shapes of the curves (drive
strengths) right, choose the supply voltage appropriately for the
desired corner of the driver.

Or do several simulations.

Regards,
Andy
 
From owner-ibis  Wed Jul 16 13:53:50 1997
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Date: Wed, 16 Jul 1997 13:52:19 -0700 (PDT)
Message-Id: <199707162052.NAA18912@quark.cdac.com>
To: ibis_users@vhdl.org
Subject: parasitic extractors

I have had requests for parasitic extractors (L as well as R&C)
for both multi-layer boards and ICs.

Anyone have a company/university that they could suggest?

Thanks,
Lynne Green
 
From owner-ibis  Wed Jul 16 14:16:06 1997
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Date: 16 Jul 1997 14:15:58 -0500
Subject: which max/min model data for cor
To: ibis-users@vhdl.org
Cc: Wray.Elliott@scismail.sci.com
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I am trying to determine the correct methodology for extracting data from
IBIS models to simulate two corner cases: 1) flight time (slow/weak driver,
max. receiver load) and 2) signal quality (fast/strong driver, min. receiver
load).

I would like to present the following table for review.

---begin parameters

    IBIS Model Parameter Values Used to Simulate Flight Time and Signal Quality

    Device                  Modeling Parameter   Flight Time   Signal Quality
                                                 (Slow,Weak)   (Fast, Strong)
    ---------------------   ------------------   -----------   --------------
    Input Buffer            Cpkg                     Max             Min
                            Rpkg                     Max             Min
                            Lpkg                     Max             Min
                            Ccomp                    Max             Min
                            PowerClamp               Max             Min
                            GroundClamp              Max             Min

    Output Buffer           Ramp (dV/dt)             Min             Max
                            PullUp                   Min             Max
                            PullDown                 Min             Max
                            PowerClamp               Min             Max
                            GroundClamp              Min             Max
                            Ccomp                    Max             Min
                            Lpkg                     Max             Min
                            Rpkg                     Max             Min
                            Cpkg                     Max             Min

    Termination             Rseries                  Max             Min
                            Rgnd                     Max             Min
                            Rpower                   Max             Min
                            Rac                      Max             Min
                            Cac                      Max             Min

    Printed Circuit Board   Zo                       Min             Max
                            S (ns/ft)                Max             Min
                            Cvia                     Max             Min

    Other                   Temperature              Min             Max
                            Vcc                      Min             Max


    References:
    Intel AP-481 "Designing with the Pentium Processor, ..." October 1993
    I/O Buffer Information Specification (IBIS) Version 2.1, December 13, 1995
    UniCAD UniSolve Course Notes "Modeling for ... Signal Integrity", January 1997

    $Id: parameters,v 1.2 1997/07/16 18:26:34 welliott Exp welliott $
---end parameters


The following text from IBIS Specification Version 2.1 causes some confusion for
me (in particular the [Power Clamp] and [Gnd Clamp] keywords):

    "For most [Model] keyword data, the "min" column describes slow, weak
    performance, and the "max" column describes the fast, strong performance."

    "The voltage and temperature keywords ... control the conditions which
    define the "typ", "min", and "max" column entries for all V/I table
    keywords [Pulldown], [Pullup], [Gnd Clamp], and [Power Clamp]; ..."


My Four Questions:

 1) For an IBIS output model, do the "min" [Power Clamp] and [Gnd Clamp] keyword
    column data entries represent the slow/weak driver condition?

 2) For an IBIS input model, do the "max" [Power Clamp] and [Gnd Clamp] keyword
    column data entries represent the maximum receiver load condition?

 3) For the IBIS input model, like the one listed below, do the "max" [Gnd Clamp]
    keyword data entries correspond to the supply voltage of 5.5 volts, as
    indicated in the [Voltage Range] keyword?

---begin edo.ibs (portion)
|
[Model]     INPUT
Model_type  Input
Vinl = 0.8
Vinh = 2.4
|
|Variable       typ    min    max
C_comp          1.5p  0.82p   2.99p
|
|Variable       typ    min    max
[Voltage range] 5.0    4.5   5.5
|
[GND_clamp]
|Volts      typ            min            max
-5.00     -127.0m        -115.6m        -140.4m
-4.00      -97.6m         -88.3m        -108.2m
-3.00      -65.8m         -59.2m         -73.5m
-2.00      -34.2m         -30.8m         -38.3m
-1.00       -5.78m         -5.77m         -5.92m
-0.800      -1.899m        -2.17m         -1.72m
-0.600      -0.714m        -0.290m        -0.465m
-0.400      -0.006m        -0.0200m        0
-0.200       0              0              0
5            0              0              0
10           0              0              0
|
---end edo.ibs (portion)

 4) Is there a simulation methodology problem running a flight time simulation using
    IBIS model data for the driver corresponding to Vcc = 4.5 volts and the IBIS model
    data for the receiver corresponding to Vcc = 5.5 volts?

Thanks,

Wray Elliott, Engineer              wray.elliott@scismail.sci.com
SCI Systems, Inc.  MS/342           (205) 882-4107 Extension 3855
13000 S. Memorial Parkway
Huntsville, Alabama 35803

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From owner-ibis  Wed Jul 16 14:53:39 1997
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To: Lynne Green <lgreen@cdac.com>
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Subject: Re: parasitic extractors
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Lynne Green wrote:
> 
> I have had requests for parasitic extractors (L as well as R&C)
> for both multi-layer boards and ICs.
> 
> Anyone have a company/university that they could suggest?

Funny you should ask.  I was researching this exact
point at DAC.  Currently the list includes Ansoft,
Lucent, and Viewlogic.  More (maybe) shortly.

-- 
D. C. Sessions
dc.sessions@tempe.vlsi.com
 
From owner-ibis  Thu Jul 17 08:53:56 1997
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From: huq@rockie.nsc.com (Syed Huq)
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To: ibis_users@vhdl.org, lgreen@cdac.com
Subject: Re: parasitic extractors

Hi,

You may also try www.optem.com

	OptEM Engineering Inc
	100 Discovery Place One
	3553-31 Street N.W
	Calgary, Canada T2L 2K7
	(403)289-0499
	Fax(403)282-1238

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Wed Jul 16 14:58:57 1997
> From: Lynne Green <lgreen@cdac.com>
> Date: Wed, 16 Jul 1997 13:52:19 -0700 (PDT)
> To: ibis_users@vhdl.org
> Subject: parasitic extractors
> 
> I have had requests for parasitic extractors (L as well as R&C)
> for both multi-layer boards and ICs.
> 
> Anyone have a company/university that they could suggest?
> 
> Thanks,
> Lynne Green
> 
 
From owner-ibis  Thu Jul 17 10:40:06 1997
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Subject: RLC
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all,

I am not quite understand what RLC_pkg is. Please help.

What is the RLC_pkg? Is it the values from the Lead frame?
How to measure the RLC's min,max values in Lead Frame?

-- 
Best Regards,

			Vincent Chang
			

=======================================================================
*  Vincent Chang                         TI MSG ID: hui8              *
*  Design Automation                     mailto:vchang@memh.ti.com    *
*  Memory Products Design                http://www.memh.ti.com/~mcad *
*  Texas Instruments Inc. MS 657         Phone: (281) 274-3167        *
*  PO Box 1443, Houston, TX 77251        Fax:   (281) 274-2067        *
=======================================================================
 
From owner-ibis  Thu Jul 17 10:45:20 1997
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Date: Thu, 17 Jul 1997 10:44:17 -0700
To: Lynne Green <lgreen@cdac.com>
From: Kellee Crisafulli <kellee@hyperlynx.com>
Subject: Re: parasitic extractors
Cc: ibis_users@vhdl.org
Mime-Version: 1.0
Content-Type: text/plain; charset="us-ascii"

Hi Lynne,
>you wrote:
>> 
>> I have had requests for parasitic extractors (L as well as R&C)
>> for both multi-layer boards and ICs.
>> 
>> Anyone have a company/university that they could suggest?

HyperLynx has several types of parasitic extractors including single line
full board, and 2d field solvers.  Please add us to the list
(www.hyperlynx.com)
PC platform (WindowsNT, Windows95) only.





-------------------------------------------------------------------------
Have a great day...
Kellee Crisafulli at HyperLynx
kellee@hyperlynx.com	http://www.hyperlynx.com
-------------------------------------------------------------------------
 
From owner-ibis  Thu Jul 17 14:20:43 1997
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Date: Thu, 17 Jul 97 17:17:15 EDT
From: "J. C. (Jay) Diepenbrock ((919)-543-8804)" <jayd@VNET.IBM.COM>
X-Addr: Interconnect Technology & Quality, B8UA/061/R118
        IBM Global Procurement
        P. O. Box 12195
        Research Triangle Park, NC  27709
To: ibis-users@vhdl.org
Subject: IBIS simulators

Greetings all,

Thanks for the many responses to my query about the above.  I'll follow up
with the various folks shortly.

Jay Diepenbrock
(whew!)
 
From owner-ibis  Thu Jul 17 16:56:27 1997
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From: Roland Chang <roland_chang@pmc-sierra.bc.ca>
To: "'ibis-users@vhdl.org'" <ibis-users@vhdl.org>
Subject: slight bug in s2ibis2?
Date: Thu, 17 Jul 1997 16:55:55 -0700
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Has anyone ever noticed in the s2ibis2 program that the ibis files that
it creates sometimes leaves a space between a number and its scaling
modifier? ie: (the space after the -0.2692 below)
I am using s2ibis2 v1.1 on unix, with the fix incorporated for 4 decimal
place accuracy.


dV/dt_r          0.3586/0.4005n      1.2744u/-0.2692  p  0.5416/0.5104n
dV/dt_f          0.6660/0.5058n      0.4140/0.7960n      0.8880/0.4919n
    

thanx

******************************************
Roland Chang ext. 2647

PMC-Sierra 
Applications Department
105-8555 Baxter Place
Burnaby, BC
V5A 4V7
Tel: (604) 415-6000

email: chang@pmc-sierra.bc.ca
******************************************
 
From owner-ibis  Fri Jul 18 11:16:06 1997
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From: dan@kaw.com (Dan Aleksandrowicz)
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To: ibis_users@vhdl.org
Subject: Diff. pair modeling
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Hello all,

I am looking for a clear definition to the method of simulating a diff. pair.
My main question is:
When simulating the DC sweep of the "true" pin, should I ground the other pin?

Thanks

		Dan Aleksandrowicz
		Engineering Solutions
		KAW/USA
		39 Simon Street
		Nashua, NH 03060
		http://www.kaw.com


 
From owner-ibis  Tue Jul 22 13:40:39 1997
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Date: Tue, 22 Jul 1997 12:29:00 -0700
To: Lynne Green <lgreen@cdac.com>
From: Eric Bogatin <bogatin@ansoft.com>
Subject: Re: parasitic extractors
Cc: ibis_users@vhdl.org
Mime-Version: 1.0
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Lynne and others interested in parasitic extraction tools,

Ansoft has a complete suite of parasitic extraction tools that includes 2D
(great for board stackups), 3D for packages, connectors and passives and 3D
full wave for either very high bandwidth models or EMI simulations. Our 3D
tools create a package model that includes all the mutual inductance and
coupling capacitance between leads. I would be happy to send more info to
anyone who is interested. Please contact me off line.

--eric bogatin


At 01:52 PM 7/16/97 -0700, Lynne Green wrote:
>I have had requests for parasitic extractors (L as well as R&C)
>for both multi-layer boards and ICs.
>
>Anyone have a company/university that they could suggest?
>
>Thanks,
>Lynne Green
>
>
**********************************************************************
Eric Bogatin
Product Manager, Signal Integrity Products
Ansoft Corporation
4675 Stevens Creek Blvd   Suite 208
Santa Clara CA 95051-6374
		
voice: 408-261-9095  x13
fax: 408-261-1245
email: bogatin@ansoft.com

pager: 888-775-1138

"In God we trust, all others, show your data"
**********************************************************************
 
From owner-ibis  Wed Jul 23 09:17:47 1997
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From: Tim McKinney <timmc@ecad2.corp.mot.com>
Subject: rise & fall waveforms
To: ibis-users@vhdl.org
Date: Wed, 23 Jul 1997 10:46:03 CDT
X-Mailer: Elm [revision: 111.1]

My question is about rising and falling waveforms.
In order to generate these curves with s2ibis2, you have to specify
certain parameters for the test fixture.  This makes it relevent to
that specific fixture.  So, should these curves be generated
only when making actual measurements to produce an IBIS model,
or should I generate them using s2ibis2 ?
If I should generate them with the automatic conversion,
what is a common fixture resistance?

Tim Mcinney
ecad2@corp.mot.com
 
From owner-ibis  Wed Jul 23 19:34:38 1997
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Date: Wed, 23 Jul 97 22:26:46 EDT
From: Andy Ingraham <ingraham@wrksys.ENET.dec.com>
To: timmc@ecad2.corp.mot.com
Cc: ibis-users@vhdl.org, ingraham@wrksys.ENET.dec.com
Apparently-To: ibis-users@vhdl.org, timmc@ecad2.corp.mot.com
Subject: Re: rise & fall waveforms

> My question is about rising and falling waveforms.
> In order to generate these curves with s2ibis2, you have to specify
> certain parameters for the test fixture.  This makes it relevent to
> that specific fixture.  So, should these curves be generated
> only when making actual measurements to produce an IBIS model,
> or should I generate them using s2ibis2 ?

They are meaningful whether generated by SPICE or measured data.  
Test fixture = test load (applied to the SPICE model, or to the
real DUT via test fixtures.)

> If I should generate them with the automatic conversion,
> what is a common fixture resistance?

For ordinary TTL/CMOS outputs, try 50 or 100 ohms to GND (for rising)
and to POWER (for falling).  Also a few other resistances, up to
1000 ohms or so.  Do the same when you generate measured data.

Regards,
Andy
 
From owner-ibis  Thu Jul 24 15:23:22 1997
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Date: Thu, 24 Jul 1997 23:22:18 +0100
From: Mike Ventham <ventham@quantic-emc.com>
Organization: Quantic EMC Inc
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To: "J. C. (Jay) Diepenbrock ((919)-543-8804)" <jayd@vnet.ibm.com>
CC: ibis-users@vhdl.org
Subject: Re: IBIS simulators
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J. C. (Jay) Diepenbrock ((919)-543-8804) wrote:
> 
> Greetings all,
> 
> Thanks for the many responses to my query about the above.  I'll
> follow up
> with the various folks shortly.
> 
> Jay Diepenbrock
> (whew!)
Jay,

I hope it is not too late to get our name on your list.

We have been working in parasitic extraction since 1983 and
have had a pre-layout simulator since 1985 allowing pre layout
simulation. You can include IBIS models after running them
through our Interface/Modellor Phidias to produce a behavioural
model (I agree with Fred!).

We also have board layout screener tools for both signal integrity
and EMC problems, as well as full enclosure/boards/cables EMC analysis
capability, not to mention 2D and 3D transmission line/parasitic
extraction tools.
-- 
Regards

Mike
________________________________________________________________
| Mike Ventham - Vice-President Engineering,                   |
| Quantic EMC Inc                   Headquarters               |
| Croft House, Chilcompton,         191 Lombard Ave, Winnipeg, |
| Somerset, UK, BA3 4JA             Manitoba, Canada R3B 0X1   |
| Tel: 44 (0)1761 232191            Tel: (204) 942 4000        |
| Fax: 44(0)1761 233549             Fax: (204) 957 1158        |
| Email: ventham@quantic-emc.com    http://www.quantic-emc.com |
 
From owner-ibis  Fri Jul 25 04:38:34 1997
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From: Tom Warneke <twarneke@cisco.com>
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To: "J. C. (Jay) Diepenbrock ((919)-543-8804)" <jayd@vnet.ibm.com>
CC: ibis_users@vhdl.org
Subject: Re: IBIS simulators
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Hi Jay,

Anyone looking for easy to use, accurate and cost effective signal
integrity analysis should look at the Hyperlynx products.  Their LinSim
product provides prelayout analysis for evaluating stack-up, termination
strategies, and determining design rules.

They support IBIS as well as their own unique modeling description.

Take a look at their www site:

http://www.hyperlynx.com

for details.

Good luck...
Tom

J. C. (Jay) Diepenbrock ((919)-543-8804) wrote:
> 
> Greetings all,
> 
> After being away from the IBIS world for a while, I'm trying to get plugged
> back into the current state of things.  Can someone fill me in on what my
> options are for what I would call standalone simulation?  (By that I mean
> simulation of board nets using IBIS models with the input from a schematic,
> rather than a board layout database.)  Meta-Software (now Avant!) had
> originally planned to support IBIS, then backed away, but I don't know what
> has happened since for those of us that want to do topology studies before
> boards are designed.
> 
> Thanks for your nominations for "simulator of the week" awards.
> 
> Jay Diepenbrock
 
From owner-ibis  Fri Jul 25 14:39:55 1997
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Date: Fri, 25 Jul 1997 16:37:45 -0500
From: Vincent Chang <vchang@memh.ti.com>
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Subject: RLC
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all,

I am not quite understand the definition of RLC packages
and how to obtain the max & min values for RLC packages. 
Please help me to clarify the questions that I had.


-- 
Best Regards,

			Vincent Chang
			

=======================================================================
*  Vincent Chang                         TI MSG ID: hui8              *
*  Design Automation                     mailto:vchang@memh.ti.com    *
*  Memory Products Design                http://www.memh.ti.com/~mcad *
*  Texas Instruments Inc. MS 657         Phone: (281) 274-3167        *
*  PO Box 1443, Houston, TX 77251        Fax:   (281) 274-2067        *
=======================================================================
 
From owner-ibis  Fri Jul 25 16:07:02 1997
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Date: Fri, 25 Jul 97 15:38:48 PDT
From: huq@rockie.nsc.com (Syed Huq)
Message-Id: <9707252238.AA29703@rockie.nsc.com>
To: ibis-users@vhdl.org, vchang@memh.ti.com
Subject: Re: RLC

Vincent,

R_pkg, L_pkg and C_pkg are the default values of the resitance,
inductance and capacitance of the package. If the values for
individual pins are available, they should be specified under
R_pin, L_pin and C_pin. These per pin values overrides the
_pkg values.

You can look at the distribution of resistance for the entire
package and that should tell you what the min and max values
are. Same applies for inductance and capacitance.

Regards,
Syed
National Semiconductor Corp.

> From owner-ibis@server.vhdl.org Fri Jul 25 15:32:32 1997
> Sender: vchang@memh.ti.com
> Date: Fri, 25 Jul 1997 16:37:45 -0500
> From: Vincent Chang <vchang@memh.ti.com>
> X-Mailer: Mozilla 3.01Gold (X11; U; HP-UX B.10.20 9000/780)
> To: ibis-users@vhdl.org
> Subject: RLC
> Content-Type> : > text/plain> ; > charset=us-ascii> 
> Content-Transfer-Encoding: 7bit
> 
> all,
> 
> I am not quite understand the definition of RLC packages
> and how to obtain the max & min values for RLC packages. 
> Please help me to clarify the questions that I had.
> 
> 
> -- 
> Best Regards,
> 
> 			Vincent Chang
> 			
> 
> =======================================================================
> *  Vincent Chang                         TI MSG ID: hui8              *
> *  Design Automation                     mailto:vchang@memh.ti.com    *
> *  Memory Products Design                http://www.memh.ti.com/~mcad *
> *  Texas Instruments Inc. MS 657         Phone: (281) 274-3167        *
> *  PO Box 1443, Houston, TX 77251        Fax:   (281) 274-2067        *
> =======================================================================
> 
 
