From owner-ibis  Fri May  1 16:49:30 1998
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Date: Fri, 01 May 1998 16:46:17 -0700
To: ibis-users@eda.org
From: Kellee Crisafulli <kellee@hyperlynx.com>
Subject: Re: IBIS User Group Minutes - 4/23/98
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Hi all,

I have 2 items:

1) HyperLynx was left out of the list of vendors supplying free
simulation engines to IC vendors:   We were the first to
offer this back in Jan. at the Design Con IBIS meeting and 
I bet we have by far supplied the most free packages to IC
vendors to date.
I would very much appreciate being mentioned in the same list
as those that also agreed at a later date to do the same.
We have already supplied a large number of packages to IC vendors
free of charge and have been doing so to various degrees 
since IBIS V0.9 was released years ago.

> Request from Bruce Helbrunn to EDA vendors that free simulation
>engine be made available to IC vendors  has received
>a positive response from Quad Design, Interconnectix/Mentor and Cadence


2) I reviewed the test loads that Greg Edlund sent out and
   noticed there might be some room for improvement I offer
   the following for your consideration.

All the following assumes this validation is against a real test board
you have.  If the goal is to just compare the simulators than ignore this
but there may be a problem determining just which simulator is correct.

After listening to Greg's talk at the Jan. 1998 Design Con IBIS
meeting I recall two goals for his test board:
1) To validate the IBIS model data matches the real device under test.
2) To insure all the simulators work with the models and provide
   the same simulation results into real boards (i.e. transmission
   lines).
Hopefully I am not confusing his talk with one of the others.

I believe the loads shown do a good job with item 2 but item 1
might benefit from a change.
I would like to see two additional cases for push/pull that
have pull up/down resistors without a transmission lines.
This allows the V/T table to be validated without the interaction
of the transmission lines.

Also for the purposes real board validation the probing ground lead length,
probe capacitance and probe locations should be specified.



-------------------------------------------------------------------------
Have a great day...
Kellee Crisafulli at HyperLynx
kellee@hyperlynx.com	http://www.hyperlynx.com
-------------------------------------------------------------------------
From owner-ibis  Mon May  4 05:22:46 1998
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From: Greg Edlund <Greg.Edlund@digital.com>
To: "'ibis-users@eda.org'" <ibis-users@eda.org>
Subject: RE: IBIS User Group Minutes - 4/23/98
Date: Mon, 4 May 1998 08:10:25 -0400
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Kellee,

I think the reason Hyperlynx was not on the list was that we were
tracking the progress of EDA vendors who had NOT yet developed a free
model development kit as Hyperlynx already has.  Perhaps this wasn't
real clear from the minutes.  I can certainly make a note of this in the
Accuracy Subcommittee minutes, which will come out this week.

Thanks for looking at the test loads.  Getting rid of the transmission
line would certainly eliminate some variables.  Electrically, an ideally
terminated transmission line and a resistive load are identical, but
real boards are not ideal.  The reason we decided to put the probe point
at the end of a transmission line in our test board is that we couldn't
place all of our probe points right next to the DUT and still route
around them.  (We have twice as many loads as necessary on the test
board to demonstrate different probing technologies.)  I think we should
mention in our documentation for the board that placing a resistive load
right next to the DUT would be desirable.  Good point about the probe
parasitics, too.

To add to what you said about the purpose of doing the test board, it is
really an example of how one might implement the IBIS Accuracy
Specification to demonstrate lab vs. simulation correlation.  Other
people will come up with other ways, but this is a start.  We're hoping
we can dodge the "simulation engine question" (i.e. where do the various
engines begin to disagree with each other and SPICE?) by sticking to
push-pull and open drain drivers at roughly IBIS 1.1 level for the first
version of the spec.  The reason we'd like every EDA vendor to
distribute a model development kit is so that IC vendors can chose one
that meets their needs as well as the needs of their customers.

Thanks for taking the time to write.  I really appreciate the input.

Greg
----------
Greg Edlund, Principal Engineer
Server Product Development
Digital Equipment Corp.
129 Parker St. PKO3-1/20C
Maynard, MA 01754
(978) 493-4157 voice
(978) 493-0941 FAX
greg.edlund@digital.com

	----------
	From: 	Kellee Crisafulli[SMTP:kellee@hyperlynx.com]
	Sent: 	Friday, May 01, 1998 7:46 PM
	To: 	ibis-users@eda.org
	Subject: 	Re: IBIS User Group Minutes - 4/23/98

	Hi all,

	I have 2 items:

	1) HyperLynx was left out of the list of vendors supplying free
	simulation engines to IC vendors:   We were the first to
	offer this back in Jan. at the Design Con IBIS meeting and 
	I bet we have by far supplied the most free packages to IC
	vendors to date.
	I would very much appreciate being mentioned in the same list
	as those that also agreed at a later date to do the same.
	We have already supplied a large number of packages to IC
vendors
	free of charge and have been doing so to various degrees 
	since IBIS V0.9 was released years ago.

	> Request from Bruce Helbrunn to EDA vendors that free
simulation
	>engine be made available to IC vendors  has received
	>a positive response from Quad Design, Interconnectix/Mentor and
Cadence


	2) I reviewed the test loads that Greg Edlund sent out and
	   noticed there might be some room for improvement I offer
	   the following for your consideration.

	All the following assumes this validation is against a real test
board
	you have.  If the goal is to just compare the simulators than
ignore this
	but there may be a problem determining just which simulator is
correct.

	After listening to Greg's talk at the Jan. 1998 Design Con IBIS
	meeting I recall two goals for his test board:
	1) To validate the IBIS model data matches the real device under
test.
	2) To insure all the simulators work with the models and provide
	   the same simulation results into real boards (i.e.
transmission
	   lines).
	Hopefully I am not confusing his talk with one of the others.

	I believe the loads shown do a good job with item 2 but item 1
	might benefit from a change.
	I would like to see two additional cases for push/pull that
	have pull up/down resistors without a transmission lines.
	This allows the V/T table to be validated without the
interaction
	of the transmission lines.

	Also for the purposes real board validation the probing ground
lead length,
	probe capacitance and probe locations should be specified.




------------------------------------------------------------------------
-
	Have a great day...
	Kellee Crisafulli at HyperLynx
	kellee@hyperlynx.com	http://www.hyperlynx.com

------------------------------------------------------------------------
-

From owner-ibis  Tue May  5 07:54:15 1998
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Date: Tue, 05 May 1998 10:13:59 -0400
To: ibis-users@eda.org
From: Kathy Breda <breda@nesa.com>
Subject: IBIS USERS -NEW MEETING DATE Thur, 5/28/98 
Mime-Version: 1.0
Content-Type: text/plain; charset="us-ascii"


IBIS Users Group Members:

We're changing the date of the IBIS User Group meeting
by moving it out one week, due to conference room
availability issues.

NEW MEETING DETAILS:

DATE:		Thursday, May 28, 1998  
TIME:		3:00 PM
LOCATION:	Stratus, Marlboro MA
		Customer Conference Room 7, Visitor Center
		(The Visitor Center is located right by the main lobby)


If you would let me know that you're attending
we can send the list ahead to Stratus to avoid
delays in signing in at their security desk.


PROPOSED AGENDA: (always looking for input)

*  IBIS education topic - Review/Overview of IBIS versions
*  Update on Connector Modeling BIRD
*  Accuracy Specification and Test Board Update
*  More on IBIS education curriculum


MAP and DIRECTIONS to STRATUS:

A map and directions can be found:
http://www.stratus.com/int/locations/home.html


Directions:

>From I-495
Take Exit 25A "To 85 / Marlboro".
Travel on this road about 2 miles
toward Route 85 and go to the second
traffic light. Turn right on Route 85,
at the 99 Restaurant. Follow 85 South
just over 1 mile to the second traffic
light, and turn right onto Hudson Street.
(Look for a big sign for Golf Driving Range).
Continue straight up the hill toward the
large Stratus sign. Take the first right
and follow the signs to Visitor Parking.
There you will find the Main Lobby.
Please check in here.

4 exit 25a             |
9----------------------+-
5                      |
                 Route 8
      X-+              5 South
 Stratus \             |
 Building \            |
          ---Hudson St-+
                       |

<end>
From owner-ibis  Tue May 12 19:58:31 1998
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From: John Lin - TAO <LinJohn@digital.com>
To: "'IBIS_USER'" <ibis-users@eda.org>
Cc: "'SI_LIST'" <si-list@silab.eng.sun.com>
Subject: Does IBIS describe output transition which  both MOS turned on? 
Date: Wed, 13 May 1998 10:54:34 +0800
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Dear IBIS fans/SI Experts,

As I know  for a CMOS device, during output transition, both PMOS and
NMOS will turn on in a short period of time. I wonder if an IBIS model
describes this behavior. If yes  then how it does. Will the behavior
affect the accuracy of simulation with IBIS model?

Based on what I know the V-I curve for PULL UP or DOWN is obtained by
turning one MOS off and then swift the V-fixture to get Current reading.
It seems to me that the V_I curve doesn't contain the information to
describe the transition, both PMOS and NMOS turned on.

Any comment?

Thanks,

JOHNLIN
CAE Engineer of EDA Department
Digital Equipment Corp. Taiwan Branch
Email: Linjohn@mail.dec.com <mailto:Linjohn@mail.dec.com> 
TEL: 1-886-3-3900000 ext. 2152

From owner-ibis  Tue May 12 23:07:25 1998
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From: Vinu Arumugham <vinu@cisco.com>
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CC: "'IBIS_USER'" <ibis-users@eda.org>,
        "'SI_LIST'" <si-list@silab.Eng.Sun.COM>
Subject: Re: [SI-LIST] : Does IBIS describe output transition which  both MOS turned on?
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John,

IBIS models also have V/T curves.  These should cover overlapped
conduction.

Vinu

John Lin - TAO wrote:

> Dear IBIS fans/SI Experts,
>
> As I know  for a CMOS device, during output transition, both PMOS and
> NMOS will turn on in a short period of time. I wonder if an IBIS model
> describes this behavior. If yes  then how it does. Will the behavior
> affect the accuracy of simulation with IBIS model?
>
> Based on what I know the V-I curve for PULL UP or DOWN is obtained by
> turning one MOS off and then swift the V-fixture to get Current reading.
> It seems to me that the V_I curve doesn't contain the information to
> describe the transition, both PMOS and NMOS turned on.
>
> Any comment?
>
> Thanks,
>
> JOHNLIN
> CAE Engineer of EDA Department
> Digital Equipment Corp. Taiwan Branch
> Email: Linjohn@mail.dec.com <mailto:Linjohn@mail.dec.com>
> TEL: 1-886-3-3900000 ext. 2152



From owner-ibis  Wed May 13 00:07:21 1998
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To: Vinu Arumugham <vinu@cisco.com>
From: Jean-Claude Perrin <jc-perrin@ti.com>
Subject: fwd: Re: [SI-LIST] : Does IBIS describe output transition which  both
	MOS turned on?
Date: Wed, 13 May 1998 08:52:37 -0700
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Reply-To: Jean-Claude Perrin <jc-perrin@ti.com>
Cc: Christian.Marot@TLSM70.tls1.siemens.net,
        claude.huet@avions.aerospatiale.fr,
        "'IBIS_USER'"
	<ibis-users@eda.org>, "W.John"<john@c-lab.de>,
        "F.Saba"<kaleu@c-lab.de>, John
	Lin - TAO <LinJohn@digital.com>,
        lionel.dreux@siege.aerospatiale.fr, "PT.
	Jenen"<ptj@delta.dk>,
        "'SI_LIST'" <si-list@silab.Eng.Sun.COM>
X-Receipt-From-Agent: true

Vinu,

   This is not really true. The V/T curve in the IBIS model definition does not
give any information about the PMO/CMOS overlapped current.
The V/T describes the behavior of the buffer  output versus frequency but does
not give any information on the current passing internaly through the output
transistors.
To know the value of the through current it is necessary to know the "Ron"
variation of the two transistors during the transition periode. The value of
this current depends upon the equivalent impedance of the two transistors,
impedance which is connected between Vdd and Vss power supply.  
 
 Jean Claude Perrin

------------------
Original text

From: Vinu Arumugham <vinu@cisco.com>, on 5/12/98 10:56 PM:
To: John Lin - TAO <LinJohn@digital.com>
Cc: "'IBIS_USER'" <ibis-users@eda.org>, "'SI_LIST'" <si-list@silab.Eng.Sun.COM>

John,

IBIS models also have V/T curves.  These should cover overlapped
conduction.

Vinu

John Lin - TAO wrote:

> Dear IBIS fans/SI Experts,
>
> As I know  for a CMOS device, during output transition, both PMOS and
> NMOS will turn on in a short period of time. I wonder if an IBIS model
> describes this behavior. If yes  then how it does. Will the behavior
> affect the accuracy of simulation with IBIS model?
>
> Based on what I know the V-I curve for PULL UP or DOWN is obtained by
> turning one MOS off and then swift the V-fixture to get Current reading.
> It seems to me that the V_I curve doesn't contain the information to
> describe the transition, both PMOS and NMOS turned on.
>
> Any comment?
>
> Thanks,
>
> JOHNLIN
> CAE Engineer of EDA Department
> Digital Equipment Corp. Taiwan Branch
> Email: Linjohn@mail.dec.com <mailto:Linjohn@mail.dec.com>
> TEL: 1-886-3-3900000 ext. 2152




From owner-ibis  Wed May 13 01:06:31 1998
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	Wed, 13 May 1998 13:29:49 +0531 (IST)
Date: Wed, 13 May 1998 13:29:49 +0531 (IST)
From: "A. D. Shirpadaraj" <ads@cadence.com>
Message-Id: <199805130758.NAA26126@corona.cadence.com>
To: vinu@cisco.com, jc-perrin@ti.com
Subject: Re: fwd: Re: [SI-LIST] : Does IBIS describe output transition which  both
	MOS turned on?
Cc: Christian.Marot@TLSM70.tls1.siemens.net,
        claude.huet@avions.aerospatiale.fr, ibis-users@eda.org, john@c-lab.de,
        kaleu@c-lab.de, LinJohn@digital.com,
        lionel.dreux@siege.aerospatiale.fr, ptj@delta.dk,
        si-list@silab.Eng.Sun.COM
X-Sun-Charset: US-ASCII


Hi Jean,

V-T curve implicitly contains the behaviour of a buffer
during transition. If you want to know the magnitude of 
current passing through the transistors during transition,
then it may not be possible from IBIS data directly.

                  ^ VDD
                  |
               ___|
        |------|  
        |      |__
        |         |
--  ----|         |-------0-----/\/\/\-----0VREF
  \     |         |       |
   \___ |      ___|       |
        -----o|         ----- 
              |__       -----
                 |        |
                 |        |  
                  --------0
                       ___|___
                        _____
                          _

   During transition  current being drawn(or sunk) from Vref
varies continously, which will be reflected in the output waveform.
So in that way V-T curve does capture transition behaviour of a buffer.

If you have more than one V-T curve, the transition can be modelled
more accurately.

Thanks

Shripadaraj
Cadence Design Systems
NOIDA
India



----- Begin Included Message -----

From owner-ibis@server.vhdl.org Wed May 13 12:36 IST 1998
MIME-Version: 1.0
Content-Transfer-Encoding: 7Bit
To: Vinu Arumugham <vinu@cisco.com>
From: Jean-Claude Perrin <jc-perrin@ti.com>
Subject: fwd: Re: [SI-LIST] : Does IBIS describe output transition which  both
	MOS turned on?
Date: Wed, 13 May 1998 08:52:37 -0700
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Cc: Christian.Marot@TLSM70.tls1.siemens.net,
        claude.huet@avions.aerospatiale.fr,
        "'IBIS_USER'"
	<ibis-users@eda.org>, "W.John"<john@c-lab.de>,
        "F.Saba"<kaleu@c-lab.de>, John
	Lin - TAO <LinJohn@digital.com>,
        lionel.dreux@siege.aerospatiale.fr, "PT.
	Jenen"<ptj@delta.dk>,
        "'SI_LIST'" <si-list@silab.Eng.Sun.COM>
X-Receipt-From-Agent: true

Vinu,

   This is not really true. The V/T curve in the IBIS model definition does not
give any information about the PMO/CMOS overlapped current.
The V/T describes the behavior of the buffer  output versus frequency but does
not give any information on the current passing internaly through the output
transistors.
To know the value of the through current it is necessary to know the "Ron"
variation of the two transistors during the transition periode. The value of
this current depends upon the equivalent impedance of the two transistors,
impedance which is connected between Vdd and Vss power supply.  
 
 Jean Claude Perrin

------------------
Original text

From: Vinu Arumugham <vinu@cisco.com>, on 5/12/98 10:56 PM:
To: John Lin - TAO <LinJohn@digital.com>
Cc: "'IBIS_USER'" <ibis-users@eda.org>, "'SI_LIST'" <si-list@silab.Eng.Sun.COM>

John,

IBIS models also have V/T curves.  These should cover overlapped
conduction.

Vinu

John Lin - TAO wrote:

> Dear IBIS fans/SI Experts,
>
> As I know  for a CMOS device, during output transition, both PMOS and
> NMOS will turn on in a short period of time. I wonder if an IBIS model
> describes this behavior. If yes  then how it does. Will the behavior
> affect the accuracy of simulation with IBIS model?
>
> Based on what I know the V-I curve for PULL UP or DOWN is obtained by
> turning one MOS off and then swift the V-fixture to get Current reading.
> It seems to me that the V_I curve doesn't contain the information to
> describe the transition, both PMOS and NMOS turned on.
>
> Any comment?
>
> Thanks,
>
> JOHNLIN
> CAE Engineer of EDA Department
> Digital Equipment Corp. Taiwan Branch
> Email: Linjohn@mail.dec.com <mailto:Linjohn@mail.dec.com>
> TEL: 1-886-3-3900000 ext. 2152






----- End Included Message -----

From owner-ibis  Wed May 13 07:46:35 1998
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Date: Wed, 13 May 1998 07:41:02 -0700
From: "D. C. Sessions" <dc.sessions@vlsi.com>
Reply-To: "'IBIS_USER'" <ibis-users@vhdl.org>,
        "'SI_LIST'" <si-list@silab.Eng.Sun.COM>
Organization: VLSI Technology Inc.
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Subject: Re: [SI-LIST] : Does IBIS describe output transition which  both
		MOS turned on?
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Jean-Claude Perrin wrote:

[wrt: IBIS v/t curves modelling crowbar current in CMOS]

>    This is not really true. The V/T curve in the IBIS model definition does not
> give any information about the PMO/CMOS overlapped current.
> The V/T describes the behavior of the buffer  output versus frequency but does
> not give any information on the current passing internaly through the output
> transistors.
> To know the value of the through current it is necessary to know the "Ron"
> variation of the two transistors during the transition periode. The value of
> this current depends upon the equivalent impedance of the two transistors,
> impedance which is connected between Vdd and Vss power supply.

The IBIS v/t curves (four, note: one each with the load to power
and one with the load to ground for both rising and falling edges)
give the full picture.  The turnon of the pullup device is given
by the rising edge/grounded load curve; the turnoff of the pullup
is given by the falling edge/grounded load curve.  The turnon of
the pulldown device is given by the rising edge/pullup load curve;
the turnoff of the pulldown is given by the falling edge/pullup
load curve.  Crowbar current on the rising edge is just the
overlap between the pullup turnon and pulldown turnoff, and on
the falling edge between the pulldown turnon and pullup turnoff.

Also, the crowbar current in CMOS outputs (esp. tristate ones, and for
practical purposes that means all of them) is very low by design.  At
least the ones I design are, and I have yet to see any others that act
differently.  Unlike internal gates output drivers have separate paths
for turning on the pullup, turning off the pulldown, turning on the
pulldown, and turning off the pulldown.  As a result it's easy to turn
the driver devices OFF faster than ON, and since crowbar current not
only wastes power but slows down the buffer I have a hard time imagining
a competent designer shipping a driver that has more than trivial
crowbar current.

-- 
D. C. Sessions
dc.sessions@tempe.vlsi.com
From owner-ibis  Wed May 13 11:05:30 1998
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From: Fred Balistreri <fred@apsimtech.com>
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Subject: Re: [SI-LIST] : Does IBIS describe output transition which  both 		MOS turned on?
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D. C. Sessions wrote:
> 
> Jean-Claude Perrin wrote:
> 
> [wrt: IBIS v/t curves modelling crowbar current in CMOS]
> 
> >    This is not really true. The V/T curve in the IBIS model definition does not
> > give any information about the PMO/CMOS overlapped current.
> > The V/T describes the behavior of the buffer  output versus frequency but does
> > not give any information on the current passing internaly through the output
> > transistors.
> > To know the value of the through current it is necessary to know the "Ron"
> > variation of the two transistors during the transition periode. The value of
> > this current depends upon the equivalent impedance of the two transistors,
> > impedance which is connected between Vdd and Vss power supply.
> 
> The IBIS v/t curves (four, note: one each with the load to power
> and one with the load to ground for both rising and falling edges)
> give the full picture.  The turnon of the pullup device is given
> by the rising edge/grounded load curve; the turnoff of the pullup
> is given by the falling edge/grounded load curve.  The turnon of
> the pulldown device is given by the rising edge/pullup load curve;
> the turnoff of the pulldown is given by the falling edge/pullup
> load curve.  Crowbar current on the rising edge is just the
> overlap between the pullup turnon and pulldown turnoff, and on
> the falling edge between the pulldown turnon and pullup turnoff.
> 
> Also, the crowbar current in CMOS outputs (esp. tristate ones, and for
> practical purposes that means all of them) is very low by design.  At
> least the ones I design are, and I have yet to see any others that act
> differently.  Unlike internal gates output drivers have separate paths
> for turning on the pullup, turning off the pulldown, turning on the
> pulldown, and turning off the pulldown.  As a result it's easy to turn
> the driver devices OFF faster than ON, and since crowbar current not
> only wastes power but slows down the buffer I have a hard time imagining
> a competent designer shipping a driver that has more than trivial
> crowbar current.
> 
> --
> D. C. Sessions
> dc.sessions@tempe.vlsi.com

Excuse my ignorance D.C. but I thought the V/T curves are a function of
voltage vs time during the respective tr/tf periods. By itself this
represents a behavior for the given load and the given load only. In the
past the V/T curves were used by the simulation vendors as a means to
coorelate the data. In other words one could look at the v/t data and
make it match IBIS under that load. Now enter 4 v/t curves. We can use
the data to test and make that match IBIS. But now the final output wrt
v/t will depend on the vendors interpretation, algorithms, topology,
and the phase of the moon. There seems to be a lot of decisions that
need to be made left up for grabs. Although my company attends the 
IBIS meetings I do not. Is there talk of publishing final V/T curves 
for say a resistively unloaded device for example. This would serve as
a means of coorelation for the vendors sake. 

One problem I see is that the v/t information by itself does not contain
the current information. That's buried in the I/V information. In fact
we can only get the answer for the given loads not dynamically. Your
presumption seems to be based on pullup/pulldown simple topologies. In
fact I can tell you we are dealing with very complex I/O stages with
feed backs, multiple current switching techniques, and the like. I don't
see such a simple solution to this problem. Real devices seem to be much
more complex and dynamic than IBIS can support. I am encouraged after
reading 3.1 spec and the formation of an independent IBIS users group
though. 

Best Regards,


-- 
Fred Balistreri
fred@apsimtech.com

http://www.apsimtech.com
From owner-ibis  Wed May 13 15:18:58 1998
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From: "D. C. Sessions" <dc.sessions@vlsi.com>
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Fred Balistreri wrote:
> D. C. Sessions wrote:
> > Jean-Claude Perrin wrote:

> > [wrt: IBIS v/t curves modelling crowbar current in CMOS]
> >
> > >    This is not really true. The V/T curve in the IBIS model definition does not
> > > give any information about the PMO/CMOS overlapped current.
> > > The V/T describes the behavior of the buffer  output versus frequency but does
> > > not give any information on the current passing internaly through the output
> > > transistors.
> > > To know the value of the through current it is necessary to know the "Ron"
> > > variation of the two transistors during the transition periode. The value of
> > > this current depends upon the equivalent impedance of the two transistors,
> > > impedance which is connected between Vdd and Vss power supply.
> >
> > The IBIS v/t curves (four, note: one each with the load to power
> > and one with the load to ground for both rising and falling edges)
> > give the full picture.  The turnon of the pullup device is given
> > by the rising edge/grounded load curve; the turnoff of the pullup
> > is given by the falling edge/grounded load curve.  The turnon of
> > the pulldown device is given by the rising edge/pullup load curve;
> > the turnoff of the pulldown is given by the falling edge/pullup
> > load curve.  Crowbar current on the rising edge is just the
> > overlap between the pullup turnon and pulldown turnoff, and on
> > the falling edge between the pulldown turnon and pullup turnoff.
> >
> > Also, the crowbar current in CMOS outputs (esp. tristate ones, and for
> > practical purposes that means all of them) is very low by design.  At
> > least the ones I design are, and I have yet to see any others that act
> > differently.  Unlike internal gates output drivers have separate paths
> > for turning on the pullup, turning off the pulldown, turning on the
> > pulldown, and turning off the pulldown.  As a result it's easy to turn
> > the driver devices OFF faster than ON, and since crowbar current not
> > only wastes power but slows down the buffer I have a hard time imagining
> > a competent designer shipping a driver that has more than trivial
> > crowbar current.

> Excuse my ignorance D.C. but I thought the V/T curves are a function of
> voltage vs time during the respective tr/tf periods.

Voltage vs. time *into a load*, and the timescales are
supposed to match up.

>                                                      By itself this
> represents a behavior for the given load and the given load only. In the
> past the V/T curves were used by the simulation vendors as a means to
> coorelate the data. In other words one could look at the v/t data and
> make it match IBIS under that load. Now enter 4 v/t curves. We can use
> the data to test and make that match IBIS. But now the final output wrt
> v/t will depend on the vendors interpretation, algorithms, topology,
> and the phase of the moon. There seems to be a lot of decisions that
> need to be made left up for grabs. Although my company attends the
> IBIS meetings I do not. Is there talk of publishing final V/T curves
> for say a resistively unloaded device for example. This would serve as
> a means of coorelation for the vendors sake.

One reason for loading the driver during derivation of v/t curves is
that outputs typically go through a very high-impedance state when
both devices are OFF.  In this time other signal sources such as
gate coupling can have a large effect on the output voltage despite
the fact that the signal source doesn't have the v/i characteristics
of the IBIS driver.

Without going into the other uses of the v/t curves, they *can* be used
to answer the present question, PROVIDED that the test load is heavy
enough to be meaningful  (A 10Kohm load isn't going to tell us much
about the characteristics of a driver with an Rdson of twelve ohms.)
The reason that this is so straightforward is that the crowbar
current only flows for a brief time when both devices are nearly OFF
anyway, so they are in deep saturation and thus the drain currents
are pretty much independent of voltage.

> One problem I see is that the v/t information by itself does not contain
> the current information.

Sure they do, it's just Ohm's Law: Id = Vout/Rload

>                          That's buried in the I/V information. In fact
> we can only get the answer for the given loads not dynamically.

Without feedback, Norton models seem to work pretty well.

>                                                                 Your
> presumption seems to be based on pullup/pulldown simple topologies. In
> fact I can tell you we are dealing with very complex I/O stages with
> feed backs,

Eeeeyeew!  Feedback!  Feedback is evil.  Bad driver, BAD.
Go to bed without stability.  Naughty, naughty, naughty.

Well, OK, that's overstating it.  Sometimes feedback is
not only useful but necessary; it still makes behavioral
modelling (a la IBIS) pretty well impossible.  IMNSHO, this
is more annoying than crippling since feedback has other
properties that limit its usefulness in applications where
signal integrity is a major concern, so giving up behavioral
modelling of feedback-controlled drivers is (again, IMO) no
great loss.

>             multiple current switching techniques, and the like. I don't
> see such a simple solution to this problem. Real devices seem to be much
> more complex and dynamic than IBIS can support.

Well, that's certainly true -- for instance, IBIS can't really deal
with JEDEC flexible-impedance drivers, and I'm writing THOSE into
the IEEE 1394b spec.  Great fun.  Still, we need to keep in mind that
the more exotic variants that you and I deal with are of very narrow
application.  Most people don't encounter anything but the vanilla
CMOS device, and for *that* the simple v/t analysis I presented is
quite adequate.  Actually, even for the exotica you mentioned it
will give a pretty good idea of the crowbar current.  Oddly enough,
the flex-z stuff is one of the ONLY cases it won't do well.

-- 
D. C. Sessions
dc.sessions@tempe.vlsi.com
From owner-ibis  Wed May 13 20:55:06 1998
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Okay, can't resist here's my two cents...

Fred Balistreri wrote:
> Id is not crowbar. So you still have to go back to the I/V data and dig
> it out as I already mentioned. V/t curves were originally intended to
> model the ac or switching characteristics which IBIS was (is?) lacking.
> Sure the information is there so is ground bounce to some degree.
> Remember the 4 v/t curve information only got added recently, but the
> single v/t curve has been in IBIS for quite some time. Chances are the
> users haven't seen a 4 v/t model yet.

Since IBIS V2.1 (circa 1995) there has been a limit of 100 waveform
tables per model allowing many "arbitrary" loading conditions.  One of
the reasons multiple waveforms were allowed right from the start was to
support a mechanism for estimating VCC, GND & the dreaded Crowbar
currents.

I've seen many 4 v/t models for quite a while but I also still see many
1 v/t models or multiple X v/t waveforms to useless loads.

***
*** MODEL BUILDERS PLEASE READ ON... 
***

More recently an IBIS model building cookbook that details recommended
loading conditions was posted for public download:

   http://www.eia.org/eig/ibis/tools.htm

   Click "IBIS Cookbook for V2.1 (Oct 13th '97)"

Best Regards,

Chris Rokusek
Viewlogic Systems
From owner-ibis  Sun May 17 18:22:43 1998
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To: ibis-users@eda.org
Subject: About ibischk2+
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Date: Mon, 18 May 1998 10:21:26 +0900
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Dear All,

I checked IBIS models by ibischk2+.
I have two questions.
Could you support me ?

1) Dose ibischk2+ make errors when IV table is non-monotonic? 
2) Why dose not ibischk2+ use "R_dut" value?  

---- Example of "1)" ---------------------------------------------------------
WARNING (line   47) - Pulldown Typical data is non-monotonic
WARNING (line   49) - Pulldown Maximum data is non-monotonic        <- 
WARNING (line  143) - Pullup Maximum data is non-monotonic
WARNING (line  183) - Pullup Minimum data is non-monotonic
WARNING (line  185) - Pullup Typical data is non-monotonic
WARNING - Model 'Buffer1': TYP AC Falling Endpoints ( 0.87V,  3.30V) not within 
          0.049V (2%) of ( 0.77V,  3.30V) on VI curves for 50 Ohms to 3.3V
WARNING - Model 'Buffer1': MIN AC Falling Endpoints ( 0.93V,  3.28V) not within 
          0.047V (2%) of ( 0.84V,  3.29V) on VI curves for 50 Ohms to 3.3V
WARNING - Model 'Buffer1': MAX AC Rising Endpoints (-0.00V,  1.85V) not within 
          0.037V (2%) of (-13.50V,  1.87V) on VI curves for 50 Ohms to 0V
                          ???????
WARNING - Model 'Buffer1': MAX AC Falling Endpoints ( 0.81V,  3.30V) not within 
          0.050V (2%) of (-15.70V,  3.30V) on VI curves for 50 Ohms to 3.3V
                          ???????
Errors  : 0
Warnings: 9
----------------------------------------------------------------------------------

Pulldown Maximum data corrected.

WARNING (line   47) - Pulldown Typical data is non-monotonic
WARNING (line  143) - Pullup Maximum data is non-monotonic
WARNING (line  183) - Pullup Minimum data is non-monotonic
WARNING (line  185) - Pullup Typical data is non-monotonic
WARNING - Model 'Buffer1': TYP AC Falling Endpoints ( 0.87V,  3.30V) not within 
          0.049V (2%) of ( 0.77V,  3.30V) on VI curves for 50 Ohms to 3.3V
WARNING - Model 'Buffer1': MIN AC Falling Endpoints ( 0.93V,  3.28V) not within 
          0.047V (2%) of ( 0.84V,  3.29V) on VI curves for 50 Ohms to 3.3V
WARNING - Model 'Buffer1': MAX AC Falling Endpoints ( 0.81V,  3.30V) not within 
          0.050V (2%) of ( 0.70V,  3.30V) on VI curves for 50 Ohms to 3.3V
                           ^^^^^
Errors  : 0
Warnings: 7
--------------------------------------------------------------------------------
  
Best regards.

Shigeto Nakajima
NEC Corpration

shigeto@saed.tmg.nec.co.jp

From owner-ibis  Mon May 18 17:06:50 1998
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To: shigeto@saed.tmg.nec.co.jp
cc: ibis-users@eda.org
Subject: Re: About ibischk2+ 
In-reply-to: Your message of "Mon, 18 May 1998 10:21:26 +0900."
             <199805180111.KAA17195@ktcgw6.saed.tmg.nec.co.jp> 
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Date: Mon, 18 May 1998 17:03:29 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


Hello Nakajima-san:

    My answers are below.  I hope this helps.

               Best Regards,
               Stephen Peters
               Intel Corp.


> Dear All,
> 
> I checked IBIS models by ibischk2+.
> I have two questions.
> Could you support me ?
> 
> 1) Dose ibischk2+ make errors when IV table is non-monotonic? 

      The ibischk2+ program checks for non-monotonic data because many 
simulators
      will not accept non-monotonic I/V data.  Please note however these are 
warnings,
      not errors.  Also be aware that the non-monotonic data may be in the 
result of
      subtracting the power/gnd clamp current from the pullup and pulldown 
currents,
      and that once the two curves are summed together (as the simulator will 
do) the
      data may be monotonic.  

      I notice that there are also warning that indicate that the V/T curves 
in your
      model do not settle to within 2% of the final DC value predicted by the 
I/V
      curves.  This may require some investigation.

> 2) Why dose not ibischk2+ use "R_dut" value?  

      The R_dut value represents part of the test load used when extracting the
      V/T curves.  It is included to document the test/extraction conditions.

> 
> ---- Example of "1)" ---------------------------------------------------------
> WARNING (line   47) - Pulldown Typical data is non-monotonic
> WARNING (line   49) - Pulldown Maximum data is non-monotonic        <- 
> WARNING (line  143) - Pullup Maximum data is non-monotonic
> WARNING (line  183) - Pullup Minimum data is non-monotonic
> WARNING (line  185) - Pullup Typical data is non-monotonic
> WARNING - Model 'Buffer1': TYP AC Falling Endpoints ( 0.87V,  3.30V) not within 
>           0.049V (2%) of ( 0.77V,  3.30V) on VI curves for 50 Ohms to 3.3V
> WARNING - Model 'Buffer1': MIN AC Falling Endpoints ( 0.93V,  3.28V) not within 
>           0.047V (2%) of ( 0.84V,  3.29V) on VI curves for 50 Ohms to 3.3V
> WARNING - Model 'Buffer1': MAX AC Rising Endpoints (-0.00V,  1.85V) not within 
>           0.037V (2%) of (-13.50V,  1.87V) on VI curves for 50 Ohms to 0V
>                           ???????
> WARNING - Model 'Buffer1': MAX AC Falling Endpoints ( 0.81V,  3.30V) not within 
>           0.050V (2%) of (-15.70V,  3.30V) on VI curves for 50 Ohms to 3.3V
>                           ???????
> Errors  : 0
> Warnings: 9
> ----------------------------------------------------------------------------------
> 
> Pulldown Maximum data corrected.
> 
> WARNING (line   47) - Pulldown Typical data is non-monotonic
> WARNING (line  143) - Pullup Maximum data is non-monotonic
> WARNING (line  183) - Pullup Minimum data is non-monotonic
> WARNING (line  185) - Pullup Typical data is non-monotonic
> WARNING - Model 'Buffer1': TYP AC Falling Endpoints ( 0.87V,  3.30V) not within 
>           0.049V (2%) of ( 0.77V,  3.30V) on VI curves for 50 Ohms to 3.3V
> WARNING - Model 'Buffer1': MIN AC Falling Endpoints ( 0.93V,  3.28V) not within 
>           0.047V (2%) of ( 0.84V,  3.29V) on VI curves for 50 Ohms to 3.3V
> WARNING - Model 'Buffer1': MAX AC Falling Endpoints ( 0.81V,  3.30V) not within 
>           0.050V (2%) of ( 0.70V,  3.30V) on VI curves for 50 Ohms to 3.3V
>                            ^^^^^
> Errors  : 0
> Warnings: 7
> --------------------------------------------------------------------------------
>   
> Best regards.
> 
> Shigeto Nakajima
> NEC Corpration
> 
> shigeto@saed.tmg.nec.co.jp





From owner-ibis  Tue May 19 16:54:42 1998
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Date: Tue, 19 May 1998 16:45:31 -0700
From: Chris Rokusek <crokusek@viewlogic.com>
Organization: Viewlogic Systems
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To: ibis@eda.org, ibis-users@eda.org
Subject: Call for V3.0 Models
References: <9805020022.AA12632@bob>
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Hi All,

I would like to request any models with V3.0 features to test against
the checker and our translator.

An NDA agreement is not a problem if it is neccessary.

If you have V3.0 models but are unable to give them out I am still
interested in the knowing which features you are using from V3.0.

If others are interested in obtaining V3.0 models please respond to me
or post to the list and I can add your name to a distribution list
(assuming I actually get some replies from this email).

Best Regards,

Chris Rokusek
Viewlogic Systems
(805) 988-8250
(805) 988-8259 fax
From owner-ibis  Wed May 20 16:22:50 1998
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Subject: EIA/IBIS Summit Meeting -- Call For Presentations
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Date: Wed, 20 May 1998 16:19:32 -0700
From: Stephen Peters <sjpeters@ichips.intel.com>


               D A C   I B I S   S U M M I T   M E E T I N G


DATE:      Thursday, June 18, 1998
TIME:      9 AM - Afternoon

LOCATION:  San Francisco Marriott Hotel, next to Moscone Center where
           the Design Automation Conference (DAC) is being held
ROOM:      Pacific 4-1

LUNCH:     Refreshments and Lunch will be provided.


AGENDA:    The main focus is to continue face-to-face technical discussions
           on IBIS Version 3.1 ratification issues.  We may ratify IBIS
           Version 3.1 at this time.

           Also, we will be electing EIA IBIS Open Forum Officers for
           1997-1998.

           The formal agenda will be developed and published before the 
           meeting.


CALL FOR PRESENTATIONS:

           We are open for presentations on any subject and may solicit
           a few presentations.

           We are also open to technical presentations related to the 
           recent BIRDs and IBIS Version 3.0 features.

           Contact Stephen Peters regarding your presentation:

              Presenter:
              Title:
              Estimated Time:

           We would like you to provide handouts for the meeting (about 25)
           and also have an electronic copy.
          

CALL FOR ATTENDEES:

           Please let Stephen Peters know if you are planning to attend so
           we have an estimate on food requirements. 


CONTACT:  Stephen Peters
          sjpeters@ichips.intel.com





------- End of Forwarded Message



From owner-ibis  Mon May 25 04:29:55 1998
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	for ibis-users@vhdl.org; Mon, 25 May 1998 16:57:08 +0531 (IST)
Date: Mon, 25 May 1998 16:57:08 +0531 (IST)
From: "A. D. Shirpadaraj" <ads@cadence.com>
Message-Id: <199805251126.QAA17032@corona.cadence.com>
To: ibis-users@vhdl.org
Subject: IBIS 3.0: Series MOSFET under off condition
X-Sun-Charset: US-ASCII

Hi Guys,

How to get V-I Table for Series MOSFET switch under OFF condition.

Is it just keeping Vds at 0(or less than cutin)volt and measuring Ids?
It means modelling for only leakage current.  Am I right?


IBIS 3.0 spec doesnot explain off state situation.



Regards


Shripad


Cadence Design Systems (India0 Ltd.,
NOIDA,
India
From owner-ibis  Tue May 26 14:56:25 1998
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Date: Tue, 26 May 1998 17:19:41 -0400
To: ibis-users@eda.org
From: Kathy Breda <breda@nesa.com>
Subject: IBIS User Group Meeting Reminder - Thurs. 5/28 @ 3:00pm
Mime-Version: 1.0
Content-Type: text/plain; charset="us-ascii"

IBIS Users Group Members:

***MEETING REMINDER***

MEETING DETAIL:

DATE:		Thursday, May 28, 1998  
TIME:		3:00 PM
LOCATION:	Stratus, Marlboro MA
		Customer Conference Room 7, Visitor Center
		(The Visitor Center is located right by the main lobby)


If you would let me know that you're attending
we can send the list ahead to Stratus to avoid
delays in signing in at their security desk.


PROPOSED AGENDA: (always looking for input)

*  IBIS education topic - Review to revise committee and program
*  Update on Connector Modeling BIRD
*  Accuracy Specification and Test Board Update
*  More on IBIS education curriculum


MAP and DIRECTIONS to STRATUS:

A map and directions can be found:
http://www.stratus.com/int/locations/home.html


Directions:

>From I-495
Take Exit 25A "To 85 / Marlboro".
Travel on this road about 2 miles
toward Route 85 and go to the second
traffic light. Turn right on Route 85,
at the 99 Restaurant. Follow 85 South
just over 1 mile to the second traffic
light, and turn right onto Hudson Street.
(Look for a big sign for Golf Driving Range).
Continue straight up the hill toward the
large Stratus sign. Take the first right
and follow the signs to Visitor Parking.
There you will find the Main Lobby.
Please check in here.

4 exit 25a             |
9----------------------+-
5                      |
                 Route 8
      X-+              5 South
 Stratus \             |
 Building \            |
          ---Hudson St-+
                       |

<end>

From owner-ibis  Wed May 27 11:15:37 1998
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From: bobr@emicx.mentorg.com (Bob Ross)
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Date: Wed, 27 May 98 11:11:43 PDT
Message-Id: <9805271811.AA00228@bob>
To: ads@cadence.com, ibis-users@eda.org
Subject: Re:  IBIS 3.0: Series MOSFET under off condition

Shripad:

Because the Off state should be mostly very low leakage
current, I would not use the V-I table.  I would
approximate the off state with a large [R Series]
value.

Best Regards,
Bob Ross
Interconnectix/Mentor Graphics


> Date: Mon, 25 May 1998 16:57:08 +0531 (IST)
> From: "A. D. Shirpadaraj" <ads@cadence.com>
> Message-Id: <199805251126.QAA17032@corona.cadence.com>
> To: ibis-users@vhdl.org
> Subject: IBIS 3.0: Series MOSFET under off condition

> Hi Guys,

> How to get V-I Table for Series MOSFET switch under OFF condition.

> Is it just keeping Vds at 0(or less than cutin)volt and measuring Ids?
> It means modelling for only leakage current.  Am I right?


> IBIS 3.0 spec doesnot explain off state situation.



> Regards


> Shripad


> Cadence Design Systems (India0 Ltd.,
> NOIDA,
> India


