[IBIS-Users] C_comp

From: <Radovan.Vuletic_at_.....>
Date: Mon Jul 11 2005 - 08:28:11 PDT
Hi IBIS experts (once again),

Now about C_comp: in IBIS specification is written that the C_comp defines the silicon die capacitance and that influences [Ramp] parameters. Question would be how (is it used as capacitive load)?
Is the [Ramp] the only parameter that is influenced by C_comp influences, or there are some other things too?

I mean, when I generate [Rising Waveform] and [Falling Waveform] intrinsic capacitances of  drivers and receivers, ESD structures and wiring are already accounted (in netlist), so I assume that taking into the account C_comp too would be kind of double counting. 

Later, when simulation tool is using IBIS model, if there are [Rising Waveform] and [Falling Waveform] this waveforms will be taken, so the information about driver/receiver, ESD and wiring capacitances will be "extracted" out of this curves, C_comp is not used - true or not?

If there are no [Rising Waveform] or [Falling Waveform] the [Ramp] parameter will be taken (true or not?). In this case simulation tool is using only [Ramp] data (this data intrinsically contain C_comp), so the C_comp is not used (true or not?)

Once again, many thanks for any help!
Regards,
Radovan

Best regards / Mit freundlichen Grüßen / S po¹tovanjem
Radovan Vuletiæ

Infineon Technologies AG
MP PD PDE
Room 03.911
Balanstraße 73
D-81541 München

Phone:		+49 (0)89 234 20108
Fax:		+49 (0)89 234 27705
Fax (PC):	+49 (0)89 234 955 5305 

E-mail: radovan.vuletic@infineon.com


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Received on Mon Jul 11 08:28:18 2005

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