Here are a few thoughts.
Say we have:
o Vcc/ Vdd etc.
|
|
|
_____|_____
| B |
| L |
| A |
| C |
o-------| K |------o output
input | |
| B |
| O |
|_____X_____|
|
|
|
|
o
Ground (Vss, Vee, etc.)
I think we could identify several potential issues for discussion here:
1) Assuming that the "insides" of this black box respond
INSTANTANEOUSLY to changes at the terminals, is the set
of caps currently in the IBIS model sufficient for modelling
the AC behavior of the four-terminal device shown above?
(Answer: No. To be *rigorous*, you need 4 self-capacitances
and 6 coupling capacitances connected between every pair of
terminals.) The question in my mind is whether we need this level
of detail for DIGITAL circuits... It could certainly be important
for ANALOG microwave circuits, but I don't think IBIS is quite
"ready for prime time" there.
Naturally there could also be inductances in series with every
lead, with mutual inductances coupling every pair.
2) Presumably the black box is really NONlinear--the capacitance
values depend upon the operating point. What can we do in this
case? Provide a table of C-V data points? What do you do with
these in a simulation? And how are they measured?
3) If the "guts" of the black box have significant "memory" and
DON'T respond instantaneously when we wiggle the terminal voltages,
what can we do? You can talk about "small-signal" impedances
and admittances, but these are only valid about a quiescent
DC operating point--not when the device is slewing rapidly
through different regions of operation. And it's even scarier
to think about how to use these in a nonlinear large-signal
simulation. (Note that this case includes the "feedback"
situation that we've recently been discussing in the forum.)
Much of this smells like university research to me...but perhaps
we can conquer it?
--Eric
Received on Fri Jan 7 14:38:00 1994
This archive was generated by hypermail 2.1.8 : Fri Jun 03 2011 - 09:52:28 PDT