Correlating IBIS models with actual Silicon measurements

Hi,
 We at Texas Instruments (India) are trying to develop IBIS models for one of our
products .We have a few questions regarding the correlation of IBIS models
(generated through simulation) with actual Silicon measurements -
    
    1.How can we measure the "input die capacitance"in the lab ?
    
    2.How can we measure the output rise/fall times when the chip is available
      in a plastic package ?Unless we open the package only the enable pin of
      an output buffer is available to us(along with the output pin)-but we can't
      access the input of the buffer.
                  Can you send us any information regarding the correlation of IBIS
      models with Silicon ?Any URL's having such information will be very helpful
      for us.
                                                       Thanks and best regards,
                                                        Amlan Chakrabarti.
                                                        Texas Instruments (India) Ltd.
                                                        E-Mail : tatai@india.ti.com
      
Received on Mon Apr 27 02:56:22 1998